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Infineon Technologies IRFR3303TRL
- Part No.:
- IRFR3303TRL
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR3303TRL.pdf
- Description:
- MOSFET N-CH 30V 33A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,139
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Product details
Overview
IRFR3303TRL from Infineon Technologies (formerly International Rectifier) is a 30V, 33A N-channel surface-mount power MOSFET in TO-252AA (D-Pak) package with RDS(on) = 0.031Ω at VGS = 10V, fully avalanche-rated, and optimized for high-efficiency DC-DC converters and motor control stages in industrial power supplies.
For engineers reviewing the IRFR3303TRL datasheet, IRFR3303TRL pinout, IRFR3303TRL application, or IRFR3303TRL equivalent, key selection criteria include its ultra-low on-resistance, fast switching (tr = 99ns, tf = 28ns), 95mJ single-pulse avalanche energy rating, and thermal resistance of 2.2°C/W junction-to-case - critical for thermally constrained PCB-mounted designs.
Technical Context
This fifth-generation HEXFET device uses advanced silicon processing to minimize conduction loss while maintaining rugged unclamped inductive switching capability. Its gate charge profile (Qg = 29nC, Qgd = 13nC) supports efficient gate drive design in synchronous buck topologies.
The integrated body diode exhibits trr = 53–80ns and Qrr = 94–140nC under 100A/µs di/dt, enabling reliable freewheeling in hard-switched converters without external Schottky supplementation in moderate-frequency operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30V maximum drain-source breakdown voltage - defines safe operating voltage ceiling in 24V rail applications. |
| RDS(on) | 0.031Ω at VGS = 10V, ID = 18A - enables ≤0.9W conduction loss at 33A continuous current with proper heatsinking. |
| ID @ TC = 25°C | 33A continuous drain current - specifies maximum steady-state current under ideal case cooling conditions. |
| EAS | 95mJ single-pulse avalanche energy - quantifies robustness against inductive switching transients without failure. |
| Qg | 29nC total gate charge - determines required gate driver peak current and switching loss trade-off at 500kHz operation. |
| tr/tf | 99ns rise / 28ns fall time - supports <1MHz PWM frequency with minimal overlap loss in synchronous rectification. |
| RθJC | 2.2°C/W junction-to-case thermal resistance - enables direct thermal interface to copper pour or heatsink for >40W dissipation. |
Pinout & Package
IRFR3303TRL is housed in a TO-252AA (D-Pak) surface-mount package with exposed drain pad for thermal and electrical performance. The package supports vapor-phase, infrared, and wave soldering per AN-994 guidelines.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - Gate | Control terminal | Receives 10V logic-level drive; threshold voltage 2.0–4.0V ensures compatibility with standard microcontroller GPIOs. |
| 2 - Drain | High-side power path | Internally connected to exposed metal tab - must be routed to ground plane or heatsink for thermal management and low-inductance return path. |
| 3 - Source | Reference node | Serves as power ground reference for gate drive and current sensing; internal source inductance (LS = 7.5nH) impacts high-di/dt stability. |
| 4 - Drain | Redundant power path | Second drain connection parallel to Pin 2 - improves current sharing and reduces package inductance in high-current paths. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.031Ω minimizes I²R losses in high-current 24V bus switching, improving efficiency by ≥1.2% vs. comparable 40V MOSFETs at 20A load. |
| Fully avalanche-rated | 95mJ EAS and 18A IAR allow operation without snubbers in flyback or buck-boost converters with leakage inductance. |
| Fast switching with low Qgd | 13nC Miller charge reduces susceptibility to dv/dt-induced turn-on and enables clean 500kHz+ operation with 13Ω gate resistor. |
| Optimized body diode | 1.3V VSD and 53ns trr support efficient synchronous rectification in DC-DC stages without external diode replacement. |
Applications
| Industrial DC-DC Converters | Brushless DC Motor Drivers |
|---|---|
|
Use Scenario: 24V input, 5–12V output synchronous buck converter in programmable logic controller (PLC) power modules. IC Role / Device Role / Timing Role: High-side main switch handling up to 30A continuous current with forced-air cooling. Use Value: 0.031Ω RDS(on) limits conduction loss to <1W at full load, reducing thermal stress on 2-layer PCB without heatsink. |
Use Scenario: Half-bridge phase leg in 24V BLDC motor controller for HVAC actuators and factory automation. IC Role / Device Role / Timing Role: Low-side switching element commutating 25A peak motor current at 20kHz PWM. Use Value: 28ns fall time and 140nC Qrr ensure minimal shoot-through risk and low reverse recovery loss during commutation. |
| Telecom Power Supplies | LED Constant-Current Drivers |
|
Use Scenario: OR-ing FET in redundant 48V telecom rectifier systems requiring hot-swap capability and fault isolation. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET acting as ideal diode with active control. Use Value: 30V VDS rating and 2.2°C/W RθJC enable reliable operation at 95% duty cycle with <5°C junction rise above case. |
Use Scenario: Primary-side switch in isolated LED driver for street lighting, operating in quasi-resonant flyback mode. IC Role / Device Role / Timing Role: Main power switch subjected to repetitive unclamped inductive stress during zero-voltage switching transitions. Use Value: 95mJ EAS rating eliminates need for external clamping circuits, simplifying BOM and improving reliability over 10-year field life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP36NF06L | RDS(on) = 0.022Ω @ 10V but VDS = 60V; TO-220 package; higher gate charge (Qg = 45nC). | Higher voltage margin suits 48V systems; through-hole mounting requires larger board area and manual assembly. | Select when 60V rating and lower on-resistance outweigh surface-mount constraints and switching loss penalties. |
| DMN3025LFG-7 | RDS(on) = 0.025Ω @ 4.5V; 30V rating; WDFN-8 package; Qg = 22nC; no avalanche rating specified. | Logic-level drive simplifies gate circuitry; smaller footprint but limited thermal mass and no guaranteed avalanche robustness. | Prefer for space-constrained, low-voltage logic-driven designs where transient immunity is managed externally. |
Compared with STP36NF06L and DMN3025LFG-7, IRFR3303TRL offers the optimal balance of 30V rating, ultra-low RDS(on), proven avalanche ruggedness, and D-Pak thermal performance - making it preferred for industrial-grade 24V power conversion where reliability and thermal headroom are prioritized over minimum footprint or logic-level convenience.
Availability
IRFR3303TRL is available at Aetrix Electronics and suitable for industrial DC-DC converters, brushless DC motor drivers, and telecom power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from qualified manufacturing lots.
Supply support for IRFR3303TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.
IRFR3303TRL belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial and telecom power systems where thermal robustness and avalanche tolerance are mandatory.
FAQ
Is IRFR3303TRL suitable for logic-level gate drive?
No - IRFR3303TRL has a gate threshold voltage range of 2.0–4.0V and is specified for 10V gate drive to achieve RDS(on) = 0.031Ω. While it may partially turn on at 4.5V, conduction losses increase significantly; use logic-level alternatives like DMN3025LFG-7 only if 10V drive is unavailable.
What is the maximum continuous current at 100°C case temperature?
The datasheet specifies ID = 21A at TC = 100°C and VGS = 10V. This derated value accounts for thermal limitations of the TO-252AA package and must be used in thermal design calculations when ambient or board temperatures exceed 70°C.
Does IRFR3303TRL require a gate resistor for stability?
Yes - a 10–15Ω series gate resistor is recommended to dampen ringing caused by LS (7.5nH) and LD (4.5nH) parasitics, especially in high-di/dt applications. Values below 5Ω increase risk of oscillation; values above 22Ω degrade switching speed unnecessarily.
Can IRFR3303TRL replace IRFR3707 in existing designs?
No - IRFR3707 has VDS = 75V and RDS(on) = 0.014Ω, targeting higher-voltage applications. Substituting IRFR3303TRL (30V) risks catastrophic failure under 48V or transient overvoltage conditions; voltage rating must never be downgraded without full system revalidation.
IRFR3303TRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 31mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 750 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 57W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR3303TRL FAQ
1.How can I place an order for IRFR3303TRL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR3303TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR3303TRL reliable?
The price and inventory of IRFR3303TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3303TRL is usually 5 days.
3.What payment methods are accepted for IRFR3303TRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3303TRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR3303TRL?
IRFR3303TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR3303TRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR3303TRL?
For technical support, including IRFR3303TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3303TRL requirements.
6.How does Aetrix verify that IRFR3303TRL is sourced from the original manufacturer or authorized distributors?
All IRFR3303TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3303TRL meets industry standards.
7.What is the process for return or replacement of IRFR3303TRL?
All IRFR3303TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3303TRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR3303TRL part is unused and in its original packaging.
Return procedure for IRFR3303TRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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