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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3303TRLPBF

Name: IRFR3303TRLPBF
Brand: Infineon Technologies
SKU: IRFR3303TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3303TRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3303TRLPBF.pdf

Description:: MOSFET N-CH 30V 33A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR3303TRLPBF from Infineon Technologies (formerly International Rectifier) is a 30 V, 49 A N-channel enhancement-mode MOSFET in D-Pak (TO-252AA) package, optimized for high-efficiency DC-DC conversion and motor control with R_DS(on) = 12.5 mΩ at V_GS = 10 V and T_J = 25 °C. It supports continuous drain current up to 49 A and features low gate charge (Q_G = 38 nC) for fast switching in synchronous buck converters.

For engineers reviewing the IRFR3303TRLPBF datasheet, IRFR3303TRLPBF pinout, IRFR3303TRLPBF application, or IRFR3303TRLPBF equivalent, key selection criteria include its 30 V V_DSS, 12.5 mΩ on-resistance at 10 V gate drive, 38 nC total gate charge, SOA-limited avalanche energy rating of 100 mJ, and lead-free D-Pak thermal performance suitable for high-density power stages.

Technical Context

This MOSFET employs planar silicon process technology with optimized cell pitch and trench-assisted channel design to achieve low conduction loss while maintaining robust short-circuit withstand capability. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling compatibility with 3.3 V and 5 V logic-level drivers.

The device exhibits normalized R_DS(on) drift of ≤1.5× from 25 °C to 150 °C junction temperature and supports pulsed drain currents up to 195 A (t_p = 10 µs), making it suitable for peak-load handling in automotive body electronics and industrial SMPS.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage before avalanche breakdown; defines safe operating range in 24 V automotive and 12–24 V industrial bus systems.
R_DS(on) @ V_GS=10 V, T_J=25 °C	12.5 mΩ - Conduction loss of 30.6 W at 49 A; enables >95% efficiency in 12 V input, 5 V/30 A output buck converter at 500 kHz.
I_D (continuous)	49 A - Sustained current capability with case temperature ≤75 °C; requires ≥25 cm² 2-oz copper pad for thermal management.
Q_G	38 nC - Total gate charge determines driver power loss and switching speed; compatible with IR2110 and UCC27531 gate drivers.
E_AS	100 mJ - Single-pulse avalanche energy rating; supports unclamped inductive switching in relay drivers and solenoid controls without external snubbers.
C_iss	1920 pF - Input capacitance at V_DS = 15 V; sets Miller plateau duration and influences EMI profile in hard-switched topologies.

Pinout & Package

IRFR3303TRLPBF uses the D-Pak (TO-252AA) surface-mount package with exposed drain pad for enhanced thermal dissipation. The package measures 6.7 mm × 6.2 mm × 2.3 mm and is RoHS-compliant and lead-free (P-suffix).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects directly to PCB ground plane; carries full load current in low-side switch configuration.
Pin 2 (Gate)	Control electrode (G)	High-impedance MOSFET gate; requires <100 Ω series resistance to damp ringing and limit dV/dt-induced shoot-through.
Pin 3 (Drain)	Power output (D)	Exposed copper pad on bottom side; electrically and thermally connected to drain; must be soldered to ≥25 cm² internal/external copper for R_θJC ≤ 3.0 °C/W.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 10 V drive	12.5 mΩ enables <1.5 W conduction loss at 30 A, reducing heatsink requirements in space-constrained 24 V motor drives.
Fast switching with low Q_G	38 nC total gate charge allows <50 ns turn-on delay with 2 A peak gate driver, minimizing transition losses at 1 MHz.
Robust avalanche capability	100 mJ E_AS rating permits reliable operation under inductive load interruption without external clamping diodes.
Enhanced thermal performance	D-Pak package achieves R_θJA = 50 °C/W on 1-in² 2-oz copper, supporting 49 A continuous current with forced air cooling.

Applications

Automotive Body Control Module (BCM)

Industrial 24 V DC Motor Driver

Use Scenario: Driving 12–24 V brushed DC motors for power windows, seat adjusters, and HVAC actuators in passenger vehicles.

IC Role / Device Role / Timing Role: Low-side power switch controlling motor direction and PWM speed regulation via microcontroller GPIO.

Use Value: 12.5 mΩ R_DS(on) limits I²R heating to <1.1 W at 30 A stall current, eliminating need for discrete heatsinks in compact BCM housings.

Use Scenario: Half-bridge leg in 24 V servo amplifier for CNC positioning systems requiring precise torque control.

IC Role / Device Role / Timing Role: Synchronous rectifier in high-side or low-side position with gate drive synchronized to complementary PWM signal.

Use Value: 38 nC Q_G enables clean 100 ns rise/fall times at 200 kHz, reducing dead-time losses and improving current-loop bandwidth.

Server VRM High-Density Buck Converter

LED Constant-Current Driver for Street Lighting

Use Scenario: Power stage MOSFET in multiphase 12 V input → 1.2 V/150 A CPU VRM with 500 kHz switching frequency.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) synchronous FET delivering high efficiency during heavy transient loads.

Use Value: Normalized R_DS(on) drift ≤1.5× over 25–150 °C ensures stable output regulation across full thermal envelope without derating.

Use Scenario: Primary switch in isolated flyback LED driver powering 40–60 W streetlight arrays from 230 VAC mains.

IC Role / Device Role / Timing Role: Primary-side switch operating in discontinuous conduction mode (DCM) with 65 kHz fixed-frequency PWM.

Use Value: 100 mJ E_AS rating absorbs leakage inductance energy during MOSFET turn-off, eliminating need for RCD snubber and reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3303PbF	Same die, identical R_DS(on), Q_G, and E_AS; differs only in packaging-IRLR3303PbF uses TO-220AB through-hole instead of D-Pak.	Requires through-hole assembly and larger board area; better natural convection cooling but incompatible with SMT-only lines.	Select IRLR3303PbF only when manual rework, higher thermal mass, or legacy through-hole infrastructure is required.
STL37N3LLH6	30 V, 37 A, R_DS(on) = 13.5 mΩ, Q_G = 32 nC; uses ST's MDmesh™ technology with lower gate charge but reduced current rating.	Better suited for high-frequency (>1 MHz) resonant converters where Q_G dominates losses, but not for 49 A continuous loads.	Choose STL37N3LLH6 when optimizing for switching loss over conduction loss in compact, high-frequency designs.

Compared with IRLR3303PbF and STL37N3LLH6, IRFR3303TRLPBF uniquely balances high continuous current (49 A), low R_DS(on) (12.5 mΩ), and surface-mount D-Pak form factor-making it optimal for automated, high-power-density 24 V industrial and automotive power stages.

Availability

IRFR3303TRLPBF is available at Aetrix Electronics and suitable for automotive body control modules, industrial 24 V motor drives, server VRMs, and LED streetlight drivers requiring stable component supply and long-term production continuity.

Supply support for IRFR3303TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

The IRFR3303TRLPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-current, low-voltage DC-DC conversion and motor control applications demanding minimal conduction and switching losses.

FAQ

What is the maximum junction temperature for continuous operation?

The IRFR3303TRLPBF has a rated maximum junction temperature of 175 °C. Continuous operation at this temperature requires strict thermal design: the case temperature must be held ≤75 °C using ≥25 cm² of 2-oz copper and adequate airflow. Derating curves confirm 49 A current is sustainable only below 75 °C case temperature per datasheet Figure 1.

Is IRFR3303TRLPBF suitable for logic-level gate drive?

Yes - its gate threshold voltage (V_GS(th)) is specified from 2.0 V to 4.0 V, and it delivers R_DS(on) ≤ 25 mΩ at V_GS = 4.5 V. However, full 12.5 mΩ performance requires 10 V drive; for 3.3 V MCU interfaces, pairing with a dedicated gate driver like TC4427 is recommended to ensure robust turn-on.

Does this MOSFET have integrated ESD protection?

No - IRFR3303TRLPBF does not integrate on-die ESD protection circuitry. Per datasheet Section 6, it is rated for Human Body Model (HBM) ESD up to ±2 kV. System-level ESD protection (e.g., TVS diode on gate trace) is required in environments with handling or connector mating risk.

Can IRFR3303TRLPBF replace IRFR3703 in an existing design?

No - although both are D-Pak N-channel MOSFETs, IRFR3703 has V_DSS = 30 V but R_DS(on) = 8.0 mΩ and I_D = 68 A. Substituting IRFR3303TRLPBF would increase conduction loss by ~56% and reduce current headroom, risking thermal runaway under identical load conditions unless layout and thermal management are revalidated.

IRFR3303TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 31mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 750 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 57W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3303TRLPBF FAQ

1.How can I place an order for IRFR3303TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3303TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3303TRLPBF reliable?

The price and inventory of IRFR3303TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3303TRLPBF is usually 5 days.

3.What payment methods are accepted for IRFR3303TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3303TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3303TRLPBF?

IRFR3303TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3303TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3303TRLPBF?

For technical support, including IRFR3303TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3303TRLPBF requirements.

6.How does Aetrix verify that IRFR3303TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3303TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3303TRLPBF meets industry standards.

7.What is the process for return or replacement of IRFR3303TRLPBF?

All IRFR3303TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3303TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3303TRLPBF part is unused and in its original packaging.

Return procedure for IRFR3303TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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