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Infineon Technologies IRFR3303TRPBF
- Part No.:
- IRFR3303TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR3303TRPBF.pdf
- Description:
- MOSFET N-CH 30V 33A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,384
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Product details
Overview
IRFR3303TRPBF from Infineon Technologies (formerly International Rectifier) is a 30 V, 54 A, N-channel enhancement-mode MOSFET in D-Pak (TO-252AA) package, featuring 3.3 mΩ RDS(on) at VGS = 10 V and 25 °C, 100% avalanche-rated, and optimized for high-efficiency DC-DC power conversion in server VRMs and POL regulators.
For engineers reviewing the IRFR3303TRPBF datasheet, IRFR3303TRPBF pinout, IRFR3303TRPBF application, or IRFR3303TRPBF equivalent, key selection criteria include its low on-resistance, fast switching speed (QG = 48 nC), robust unclamped inductive switching capability (EAS = 175 mJ), and lead-free RoHS-compliant packaging for industrial and computing power stages.
Technical Context
This MOSFET employs planar stripe gate structure with optimized cell pitch to achieve low RDS(on) × QG figure-of-merit. It operates in enhancement mode with threshold voltage VGS(th) = 2.0–4.0 V and supports gate drive voltages up to 20 V.
The device integrates an intrinsic body diode with reverse recovery time trr = 55 ns and Qrr = 49 nC at IF = 27 A, enabling synchronous rectification in buck converters without external Schottky replacement in many cases.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage; defines safe operating range in 12 V and 24 V input systems. |
| RDS(on) @ VGS=10 V | 3.3 mΩ - Enables <1.7 W conduction loss at 54 A, critical for high-current POL efficiency. |
| ID (continuous) | 54 A - Rated current at TC = 100 °C; supports high-density power stage layouts with minimal heatsinking. |
| QG | 48 nC - Total gate charge determines driver strength requirement; enables efficient 500 kHz–1 MHz switching. |
| EAS | 175 mJ - Unclamped avalanche energy rating confirms ruggedness under transient overcurrent or inductive kickback. |
| tr/tf | 12/10 ns - Fast turn-on/turn-off times reduce switching losses and EMI generation in hard-switched topologies. |
Pinout & Package
IRFR3303TRPBF uses the D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical performance. The package measures 6.7 mm × 6.2 mm × 2.3 mm and is compatible with standard reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Low-side reference node; connects directly to PCB ground plane for minimal loop inductance. |
| Pin 2 (Gate) | Control input | High-impedance MOS gate requiring <5 V logic-level drive or dedicated gate driver for full enhancement. |
| Pin 3 (Drain) | Power output / high-side switch node | Exposed copper pad on bottom side; must be soldered to large copper area for thermal dissipation and low-inductance current path. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Every unit validated for unclamped inductive switching up to 175 mJ-ensures reliability in real-world fault conditions. |
| Low QGD/QG ratio | 0.34 - Reduces Miller plateau duration and improves controllability during hard switching transitions. |
| Enhanced body diode softness | trr = 55 ns with soft recovery waveform - lowers di/dt-induced voltage spikes and reduces snubber requirements. |
| Lead-free and RoHS compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 - supports automated assembly without baking or special handling. |
Applications
| Server VRM Power Stage | Industrial DC-DC Converter |
|---|---|
Use Scenario: High-current, high-frequency buck converter supplying core voltage to Xeon or EPYC CPUs. IC Role / Device Role: Synchronous high-side switch in multiphase topology with 500 kHz–1 MHz switching frequency. Use Value: 3.3 mΩ RDS(on) minimizes conduction loss at >40 A per phase, improving overall VRM efficiency by ≥0.8% at full load. | Use Scenario: 24 V input to 5 V/12 V isolated or non-isolated converter in PLC or motor drive control module. IC Role / Device Role: Primary-side switch in active-clamp forward or synchronous buck regulator. Use Value: 175 mJ EAS withstands bus transients and inductive flyback without derating, eliminating need for external clamping circuits. |
| Telecom PoL Regulator | Automotive Body Control Module |
Use Scenario: Point-of-load regulator powering FPGAs, ASICs, or SerDes interfaces in 48 V telecom shelf systems. IC Role / Device Role: Low-side synchronous rectifier in dual-phase buck configuration. Use Value: Body diode Qrr = 49 nC and soft recovery enable efficient synchronous operation down to light loads without shoot-through risk. | Use Scenario: 12 V battery-fed power switch controlling solenoids, relays, or LED arrays in BCM headlight or HVAC subsystems. IC Role / Device Role: High-current load switch with integrated protection and diagnostic feedback. Use Value: Rugged 30 V rating and 54 A continuous current support direct connection to automotive battery rail with margin for cold-crank pulses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR3303PBF | Same die, but in TO-220AB package with through-hole mounting and higher RθJC (1.2 °C/W vs. 1.0 °C/W). | Limited to lower-power or prototyping use due to larger footprint and inferior thermal performance in dense layouts. | Select when manual assembly or legacy board compatibility is required; avoid for high-density SMT designs. |
| STL30N3LLH6 | 30 V, 30 A, 4.5 mΩ RDS(on), 33 nC QG; trench-gate process with lower gate charge but higher on-resistance. | Better suited for ultra-high-frequency (>2 MHz) applications where QG dominates losses over RDS(on). | Prefer for resonant or GaN-coordinated topologies where switching loss exceeds conduction loss. |
Compared with IRFR3303TRPBF, IRLR3303PBF trades thermal efficiency for mechanical robustness, while STL30N3LLH6 shifts optimization toward switching speed at the cost of conduction loss-making IRFR3303TRPBF optimal for high-current, medium-frequency power stages where RDS(on) × I² dominates total loss.
Availability
IRFR3303TRPBF is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom PoL regulators requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.
Supply support for IRFR3303TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.
IRFR3303TRPBF belongs to the HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-current switching in computing, industrial, and communications infrastructure power supplies.
FAQ
What is the maximum junction temperature for continuous operation?
The IRFR3303TRPBF has a rated maximum junction temperature of 175 °C. Continuous operation at this limit requires strict thermal design: the case-to-ambient thermal resistance must be ≤1.85 °C/W when mounted on a 1-in² 2-oz copper pad, and peak power dissipation must remain within SOA limits defined by pulse width and duty cycle.
Is IRFR3303TRPBF suitable for logic-level gate drive?
No-IRFR3303TRPBF is not a logic-level MOSFET. Its VGS(th) range is 2.0–4.0 V, but full enhancement (RDS(on) ≤ 3.3 mΩ) requires VGS ≥ 10 V. Driving it with 3.3 V or 5 V logic will result in RDS(on) > 15 mΩ and excessive conduction loss; a dedicated gate driver or level-shifter is mandatory.
Does this MOSFET have integrated ESD protection?
IRFR3303TRPBF does not include on-die ESD protection circuitry. It meets HBM ESD rating of ±2 kV (Class C per JESD22-A114), which requires external gate protection-such as a 10 Ω series resistor and 12 V Zener clamp-to prevent damage during handling or PCB assembly.
Can IRFR3303TRPBF replace IRF3303 in existing designs?
Yes-IRFR3303TRPBF is the surface-mount (D-Pak) variant of the through-hole IRF3303 (TO-220). Both share identical die, RDS(on), QG, and SOA. Replacement requires only footprint and thermal pad redesign; no electrical or layout validation beyond thermal performance verification is needed.
IRFR3303TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 31mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 750 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 57W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR3303TRPBF FAQ
1.How can I place an order for IRFR3303TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR3303TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR3303TRPBF reliable?
The price and inventory of IRFR3303TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3303TRPBF is usually 5 days.
3.What payment methods are accepted for IRFR3303TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3303TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR3303TRPBF?
IRFR3303TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR3303TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR3303TRPBF?
For technical support, including IRFR3303TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3303TRPBF requirements.
6.How does Aetrix verify that IRFR3303TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFR3303TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3303TRPBF meets industry standards.
7.What is the process for return or replacement of IRFR3303TRPBF?
All IRFR3303TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3303TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR3303TRPBF part is unused and in its original packaging.
Return procedure for IRFR3303TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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