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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3303TRR

Name: IRFR3303TRR
Brand: Infineon Technologies
SKU: IRFR3303TRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3303TRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3303TRR.pdf

Description:: MOSFET N-CH 30V 33A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:3,184

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Product details

Overview

IRFR3303TRR from Infineon Technologies (formerly International Rectifier) is a 30V, 33A N-channel enhancement-mode power MOSFET in TO-252AA (D-Pak) surface-mount package, featuring 0.031Ω R_DS(on) at V_GS = 10V, fully avalanche-rated operation, and fast switching with 29nC total gate charge - deployed in DC-DC synchronous rectification, motor drive half-bridges, and high-efficiency load switches.

For engineers reviewing the IRFR3303TRR datasheet, IRFR3303TRR pinout, IRFR3303TRR application, or IRFR3303TRR equivalent, key selection criteria include junction-to-case thermal resistance (2.2°C/W), pulsed drain current capability (120A), body diode reverse recovery time (53–80ns), and SOA-limited continuous current at elevated case temperature.

Technical Context

This HEXFET® device uses fifth-generation silicon process technology to achieve ultra-low on-resistance per die area while maintaining rugged unclamped inductive switching performance. Its gate threshold voltage (2.0–4.0V) supports standard 10V gate drive, and its 140pF Crss enables predictable Miller-effect-controlled turn-off timing.

The integrated source-drain body diode exhibits 1.3V forward drop at 18A and 25°C, with 94–140nC reverse recovery charge under di/dt = 100A/µs - critical for synchronous buck converter efficiency and shoot-through margin in H-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30V maximum drain-source breakdown voltage - sets hard upper limit for bus voltage in 24V industrial systems
R_DS(on)	0.031Ω max at V_GS = 10V, I_D = 18A - determines conduction loss of 10.1W at 18A continuous
I_D (T_C = 25°C)	33A continuous drain current - defines PCB copper area and heatsinking needed for full-load operation
E_AS	95mJ single-pulse avalanche energy - enables reliable operation during inductive turn-off transients without external snubbers
Q_g	29nC total gate charge - directly impacts required gate driver peak current and switching loss at 500kHz
t_r/t_f	99ns rise / 28ns fall time - constrains minimum practical dead time in half-bridge PWM control
R_θJC	2.2°C/W junction-to-case thermal resistance - allows direct thermal interface to heatsink or copper pour for >50W dissipation

Pinout & Package

IRFR3303TRR is housed in a TO-252AA (D-Pak) thermally enhanced surface-mount package with exposed drain pad for low-inductance, high-current routing and efficient heat transfer to PCB copper. The package supports vapor-phase, infrared, and wave soldering per AN-994 footprint guidelines.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10V logic-level gate drive; 7.3nC Qgs requires <1A peak driver current for 100ns edge
2 (Drain)	Main current path output	Internally connected to exposed metal tab - must be routed to high-current DC bus or heatsink
3 (Source)	Reference node for gate drive	Serves as return path for load current and gate drive loop; low-inductance layout essential for EMI control
4 (Drain)	Secondary drain connection	Parallel path to Pin 2 for reduced package inductance; both pins must be soldered to same copper plane

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.031Ω enables <0.5W conduction loss at 4A - ideal for compact 12V/24V load switches
Fully avalanche rated	95mJ single-pulse energy rating eliminates need for external clamping in relay drivers and solenoid controls
Fast body diode recovery	53–80ns trr with 94–140nC Qrr reduces cross-conduction losses in synchronous rectifiers
Thermally optimized D-Pak	2.2°C/W R_θJC allows >40W dissipation with minimal heatsink - superior to SO-8 or PowerPAK
Logic-level compatible	V_GS(th) range (2.0–4.0V) ensures robust turn-on with 3.3V or 5V microcontroller GPIO

Applications

Industrial Motor Drive

Automotive Body Control Module

Use Scenario: Half-bridge gate driver for 24V brushed DC motor in HVAC blower assembly.

IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and PWM speed regulation at 20kHz.

Use Value: 0.031Ω R_DS(on) limits conduction loss to ≤1.1W at 6A RMS, enabling sealed enclosure operation without forced air cooling.

Use Scenario: High-side load switch for LED headlamp dimming and fog light sequencing.

IC Role / Device Role / Timing Role: Power FET delivering up to 15A pulsed current with controlled slew rate to suppress EMI.

Use Value: Fully rated avalanche capability absorbs inductive kickback from lamp filaments during hot-swap events.

Server PSU Synchronous Rectification

Programmable Logic Controller Output Stage

Use Scenario: Secondary-side synchronous rectifier in 48V-to-12V isolated DC-DC converter.

IC Role / Device Role / Timing Role: N-channel FET replacing Schottky diode to reduce forward voltage drop and improve efficiency.

Use Value: 1.3V body diode V_SD at 18A and fast 53ns trr minimize reverse recovery loss during dead-time transitions.

Use Scenario: Solid-state replacement for electromechanical relays driving 24V solenoid valves in factory automation.

IC Role / Device Role / Timing Role: High-current, high-reliability switching element with built-in overtemperature protection interface.

Use Value: 120A pulsed drain current handles 10× inrush surge of solenoids; 150°C max T_J supports extended ambient operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL33N3LLH6	30V, 33A, R_DS(on) = 0.028Ω, TO-263 package, 35nC Q_g	Higher gate charge increases driver requirements; larger package improves thermal mass but requires different footprint	Preferred where higher peak current and lower R_DS(on) justify board space and driver redesign
ON Semiconductor NTMFS4C09NT1G	30V, 32A, R_DS(on) = 0.032Ω, SO-8FL package, 24nC Q_g	Smaller SO-8FL footprint reduces board area but limits power dissipation to ~2.5W without heatsink	Selected when space-constrained designs prioritize compactness over >5W continuous power handling

Compared with STL33N3LLH6 and NTMFS4C09NT1G, IRFR3303TRR delivers optimal balance of thermal performance (2.2°C/W), gate drive compatibility (29nC), and proven field reliability in industrial motor control - making it preferred for medium-power surface-mount applications requiring robust SOA and avalanche immunity.

Availability

IRFR3303TRR is available at Aetrix Electronics and suitable for industrial motor drives, automotive body electronics, server power supplies, and programmable logic controller output stages requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFR3303TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap device design and manufacturing.

The HEXFET® Power MOSFET product line was developed for high-efficiency, high-reliability power conversion in industrial, automotive, and computing applications - emphasizing low R_DS(on), fast switching, and rugged transient performance.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR3303TRR supports 21A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252AA package and silicon junction temperature cap of 150°C. Designers must verify PCB copper area and airflow to sustain this current without exceeding R_θJA = 50°C/W under real mounting conditions.

Is IRFR3303TRR suitable for 3.3V microcontroller gate drive?

While the gate threshold voltage range is 2.0–4.0V, full enhancement to 33A requires V_GS ≥ 10V per datasheet test conditions. At 3.3V, R_DS(on) rises significantly - typical g_fs of 9.3S implies only partial turn-on. A gate driver IC (e.g., TC4427) or level-shifter is required for reliable switching in logic-level applications.

Does IRFR3303TRR have integrated ESD protection?

No integrated ESD protection diodes are specified in the datasheet. Gate-to-source leakage is rated at ±100nA at ±20V, and absolute maximum V_GS is ±20V. External Zener clamps (e.g., 12V TVS) are recommended on gate traces in automated assembly or high-static environments to prevent damage during handling or system operation.

How does the body diode performance compare to discrete Schottky diodes?

The intrinsic body diode has V_SD = 1.3V at 18A and 25°C, higher than typical Schottky forward drops (0.4–0.7V), but offers integrated structure and no reverse leakage concerns. Its 53–80ns trr and 94–140nC Q_rr are slower than fast Schottkys but sufficient for ≤200kHz synchronous rectification where gate timing margins allow dead-time compensation.

IRFR3303TRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 31mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 750 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 57W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3303TRR FAQ

1.How can I place an order for IRFR3303TRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3303TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3303TRR reliable?

The price and inventory of IRFR3303TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3303TRR is usually 5 days.

3.What payment methods are accepted for IRFR3303TRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3303TRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3303TRR?

IRFR3303TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3303TRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3303TRR?

For technical support, including IRFR3303TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3303TRR requirements.

6.How does Aetrix verify that IRFR3303TRR is sourced from the original manufacturer or authorized distributors?

All IRFR3303TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3303TRR meets industry standards.

7.What is the process for return or replacement of IRFR3303TRR?

All IRFR3303TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3303TRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3303TRR part is unused and in its original packaging.

Return procedure for IRFR3303TRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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