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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3410PBF

Name: IRFR3410PBF
Brand: Infineon Technologies
SKU: IRFR3410PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3410PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3410PBF.pdf

Description:: MOSFET N-CH 100V 31A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR3410PBF from Infineon Technologies (formerly International Rectifier) is a 100 V, 31 A N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, featuring 34 mΩ typical R_DS(on) at V_GS = 10 V and optimized for high-frequency DC-DC converters requiring low switching loss and robust avalanche capability. It integrates a fast-recovery body diode (t_rr = 84 ns, Q_rr = 260 nC) and supports unclamped inductive switching up to 140 mJ.

For engineers reviewing the IRFR3410PBF datasheet, IRFR3410PBF pinout, IRFR3410PBF application, or IRFR3410PBF equivalent, key selection criteria include its 39 mΩ max R_DS(on), 37–56 nC total gate charge, 1.4 °C/W junction-to-case thermal resistance, and validated operation from –55 °C to +175 °C junction temperature.

Technical Context

This HEXFET device uses planar vertical DMOS technology with fully characterized dynamic parameters including C_iss = 1690 pF, C_oss = 220 pF (V_DS = 25 V), and C_rss = 26 pF - enabling accurate snubber and gate drive design. Its low Q_gd/Q_gs ratio (11/10 nC) supports fast, controllable turn-on and reduced Miller-induced shoot-through risk.

The MOSFET delivers stable on-resistance over temperature (0.11 %/°C V_(BR)DSS TC, normalized R_DS(on) = 3.0× at T_J = 175 °C), and features fully specified avalanche energy (E_AS = 140 mJ) and diode recovery dv/dt rating (15 V/ns), making it suitable for hard-switched topologies with inductive loads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in buck, flyback, and half-bridge stages.
R_DS(on) max	39 mΩ @ V_GS = 10 V, T_J = 25 °C - Defines conduction loss at rated current; impacts thermal design and efficiency at 31 A DC.
Q_g max	56 nC - Total gate charge required for full turn-on; determines gate driver power and switching speed trade-off.
t_r/t_f	27 ns / 13 ns @ I_D = 18 A, R_G = 9.1 Ω - Fast edge rates enable >500 kHz operation while limiting EMI generation.
E_AS	140 mJ - Single-pulse avalanche energy rating; allows safe operation during transient overvoltage or inductive turn-off events.
R_θJC	1.4 °C/W - Junction-to-case thermal resistance; enables direct heatsink mounting for 110 W continuous dissipation at T_C = 25 °C.
t_rr	84 ns @ I_F = 18 A, di/dt = 100 A/µs - Body diode reverse recovery time; critical for synchronous rectification and ZVS design.

Pinout & Package

IRFR3410PBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical connection. The package supports PCB heatsinking via the drain tab and offers 1.4 °C/W junction-to-case thermal resistance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Reference node for gate drive; connects to power ground or low-side return path; carries full load current.
Pin 2 (Gate)	Control terminal (G)	High-impedance input controlling channel conduction; requires <56 nC charge for full enhancement at 10 V.
Pin 3 (Drain)	Power output terminal (D)	Exposed copper tab - electrically and thermally connected to drain; must be soldered to large copper pour for thermal management.

Key Features

Feature	Design Value
Low Q_gd/Q_gs ratio	11 nC / 10 nC - Reduces Miller plateau duration and improves immunity to false turn-on during high dv/dt commutation.
Fully characterized C_oss	220 pF @ V_DS = 25 V; 130 pF @ V_DS = 80 V - Enables precise soft-switching timing and resonant tank design.
Lead-free construction	RoHS-compliant, Pb-free termination (PbF suffix) - Meets IPC/JEDEC J-STD-020 reflow profile requirements up to 300 °C for 10 s.
Enhanced avalanche ruggedness	140 mJ single-pulse E_AS - Eliminates need for external clamping in unregulated inductive switchers.
Optimized for high-frequency operation	37 nC typical Q_g, 27 ns rise time - Supports efficient operation in 300–1000 kHz DC-DC converters without excessive gate drive loss.

Applications

Motor Drive Inverter Stage

Industrial DC-DC Converter

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers driving 5–10 A peak phase current.

IC Role / Device Role / Timing Role: Low-side switching element with fast body diode recovery enabling active freewheeling and reduced shoot-through risk.

Use Value: 84 ns t_rr and 260 nC Q_rr minimize diode conduction loss and voltage overshoot during commutation.

Use Scenario: Primary-side switch in isolated 48 V input, 12 V output forward converter operating at 500 kHz.

IC Role / Device Role / Timing Role: High-efficiency power switch with low R_DS(on) and controlled Q_g to balance conduction and switching losses.

Use Value: 34 mΩ R_DS(on) and 56 nC Q_g deliver >94% efficiency at full load while maintaining thermal margin.

Telecom Power Supply

Automotive DC-DC Module

Use Scenario: Synchronous rectifier in 48 V telecom intermediate bus converter delivering 20 A at 5 V.

IC Role / Device Role / Timing Role: Secondary-side N-channel MOSFET replacing Schottky diode; driven by transformer-coupled gate signal.

Use Value: Low V_SD (1.3 V) and fast t_rr reduce forward and recovery losses versus discrete diodes.

Use Scenario: Load switch in 12 V automotive infotainment power rail with overcurrent and thermal protection.

IC Role / Device Role / Timing Role: High-current, high-temp-rated power switch supporting 175 °C junction operation in under-hood environments.

Use Value: Rated for continuous 22 A at T_C = 100 °C and qualified per AEC-Q101 stress test conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP36NF10	100 V, 36 A, R_DS(on) = 32 mΩ, Q_g = 65 nC, TO-220 package	Through-hole mounting; higher gate charge increases driver complexity	Preferred where mechanical robustness and heatsink accessibility outweigh PCB space constraints.
IXTP30N10P	100 V, 30 A, R_DS(on) = 38 mΩ, Q_g = 42 nC, TO-220FP package	Shorter lead form factor; lower Q_g improves high-frequency efficiency but reduces avalanche margin (E_AS = 95 mJ)	Selected when gate drive power budget is tight and avalanche stress is minimal.

Compared with STP36NF10 and IXTP30N10P, IRFR3410PBF offers superior thermal performance via D-Pak mounting (R_θJC = 1.4 °C/W vs. ≥2.5 °C/W), tighter R_DS(on) tolerance (34–39 mΩ), and higher E_AS - making it optimal for compact, high-reliability surface-mount power stages.

Availability

IRFR3410PBF is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and automotive DC-DC modules requiring stable component supply, RoHS compliance, and extended temperature operation.

Supply support for IRFR3410PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap solutions.

The IRFR3410PBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial and communications power conversion systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IRFR3410PBF supports 22 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package and ensures reliable operation within its 1.4 °C/W R_θJC constraint when mounted on adequate copper area.

Does the body diode support synchronous rectification?

Yes - the integrated body diode has t_rr = 84 ns and Q_rr = 260 nC at I_F = 18 A, enabling use in synchronous rectifier configurations. However, its V_SD = 1.3 V at 18 A is higher than dedicated Schottky diodes, so efficiency gain depends on switching frequency and duty cycle.

Is IRFR3410PBF pin-compatible with IRFU3410PBF?

Yes - both share identical D-Pak (TO-252) footprint and pinout (G-S-D). The IRFU3410PBF is the I-Pak variant (through-hole), while IRFR3410PBF is the surface-mount version; they are functionally identical except for package type and thermal performance (R_θJA differs).

What gate voltage is required to achieve full enhancement?

A minimum V_GS of 10 V is required to achieve R_DS(on) ≤ 39 mΩ. The gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, but full conduction and low on-resistance demand ≥10 V drive - underscoring the need for a robust gate driver capable of sourcing/sinking >1 A peak current.

IRFR3410PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 39mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1690 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3410PBF FAQ

1.How can I place an order for IRFR3410PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3410PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3410PBF reliable?

The price and inventory of IRFR3410PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3410PBF is usually 5 days.

3.What payment methods are accepted for IRFR3410PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3410PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3410PBF?

IRFR3410PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3410PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3410PBF?

For technical support, including IRFR3410PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3410PBF requirements.

6.How does Aetrix verify that IRFR3410PBF is sourced from the original manufacturer or authorized distributors?

All IRFR3410PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3410PBF meets industry standards.

7.What is the process for return or replacement of IRFR3410PBF?

All IRFR3410PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3410PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3410PBF part is unused and in its original packaging.

Return procedure for IRFR3410PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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