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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3410TRRPBF

Name: IRFR3410TRRPBF
Brand: Infineon Technologies
SKU: IRFR3410TRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3410TRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3410TRRPBF.pdf

Description:: MOSFET N-CH 100V 31A DPAK

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Product details

Overview

IRFR3410TRRPBF from Infineon Technologies (formerly International Rectifier) is a 100 V, 31 A N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, featuring 34 mΩ typical R_DS(on) at V_GS = 10 V and optimized for high-frequency DC-DC converters requiring low switching loss and robust avalanche capability. It integrates a fast-recovery body diode (t_rr = 84 ns, Q_rr = 260 nC) and supports unclamped inductive switching up to 140 mJ.

For engineers reviewing the IRFR3410TRRPBF datasheet, IRFR3410TRRPBF pinout, IRFR3410TRRPBF application, or IRFR3410TRRPBF equivalent, key selection criteria include its 39 mΩ max R_DS(on), 37 nC total gate charge, 1.4 °C/W junction-to-case thermal resistance, and validated operation from –55 °C to +175 °C junction temperature.

Technical Context

This HEXFET device employs planar vertical DMOS structure with optimized cell pitch and trench-assisted field shaping to achieve low on-resistance while maintaining high dV/dt immunity (15 V/ns). Its gate charge profile (Q_gs = 10 nC, Q_gd = 11 nC) enables precise timing control in synchronous buck topologies.

The integrated body diode exhibits soft recovery characteristics confirmed by 100 A/µs di/dt testing and is fully characterized for reverse recovery energy (E_rr) across temperature-critical for ZVS and active-clamp designs where diode conduction occurs during dead-time.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands 80 V DC bus with 25% margin for transient spikes in industrial SMPS.
R_DS(on) max	39 mΩ @ V_GS = 10 V, T_J = 25 °C - Enables ≤1.2 W conduction loss at 18 A continuous drain current.
Q_g	56 nC max - Determines gate driver power requirement and switching speed in 100–500 kHz converters.
E_AS	140 mJ single-pulse - Supports reliable operation under unclamped inductive load faults without derating.
t_r/t_f	27 ns / 13 ns @ I_D = 18 A - Enables <100 ns total switching transition for high-efficiency >300 kHz operation.
R_θJC	1.4 °C/W - Allows direct heatsinking to PCB copper pour or external heatsink for 110 W P_D dissipation.
C_oss eff	250 pF - Used in resonant tank design for LLC and zero-voltage switching analysis.

Pinout & Package

IRFR3410TRRPBF uses the D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 6.73 mm × 6.22 mm × 2.39 mm and is RoHS-compliant and lead-free.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects directly to power ground plane; carries full load current.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires 10 V drive for full enhancement; sensitive to ESD.
Pin 3 (Drain)	Power output (D)	Exposed copper pad on bottom surface; electrically and thermally connected to drain; must be soldered to large copper area.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	11/56 nC = 0.20 - Reduces Miller-induced shoot-through risk in half-bridge configurations.
Fully characterized C_oss(V_DS)	130–1640 pF over 1–80 V - Enables accurate snubber and resonant circuit modeling.
Avalanche-rated	140 mJ E_AS at T_J = 25 °C - Eliminates need for external clamping in flyback and boost converters.
Soft-recovery body diode	t_rr = 84 ns, Q_rr = 260 nC - Minimizes voltage overshoot and EMI during commutation in synchronous rectification.

Applications

Server VRM

Industrial Motor Drive

Use Scenario: Point-of-load (POL) converter supplying CPU core voltage in 1U rack servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–600 kHz with 10 ns dead-time control.

Use Value: 34 mΩ R_DS(on) and 37 nC Q_g enable >92% efficiency at 12 V input / 1.2 V output, 100 A load.

Use Scenario: Inverter leg in 0.5–2 kW brushless DC motor drives for HVAC blowers.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter with 10 kHz PWM and regenerative braking.

Use Value: 175 °C max T_J rating and 140 mJ E_AS ensure reliability during short-circuit events and rapid deceleration.

Solar Microinverter

Automotive DC-DC Converter

Use Scenario: DC-AC H-bridge stage in 250 W photovoltaic microinverters.

IC Role / Device Role / Timing Role: Bidirectional switch handling 25 A peak AC current with body diode conducting during zero-crossing.

Use Value: Soft-recovery diode (Q_rr = 260 nC) reduces EMI and improves THD vs. standard fast-recovery diodes.

Use Scenario: 12 V to 48 V bidirectional DC-DC converter in 48 V mild-hybrid automotive systems.

IC Role / Device Role / Timing Role: Synchronous rectifier in dual-active-bridge topology operating at 200 kHz with phase-shift control.

Use Value: 1.4 °C/W R_θJC allows direct mounting to aluminum chassis for passive cooling in space-constrained engine bay environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP36NF10	100 V, 36 A, R_DS(on) = 32 mΩ, Q_g = 65 nC, TO-220 package	Higher thermal mass but no exposed drain pad; requires mechanical heatsink mounting	Preferred for lower-frequency (<100 kHz), higher-current designs where PCB real estate is less constrained.
IXTP30N10P	100 V, 30 A, R_DS(on) = 38 mΩ, Q_g = 42 nC, TO-220FP package	Lower Q_g but higher R_DS(on); vertical package limits thermal path to PCB	Better for gate-drive-limited designs needing faster turn-on, but less efficient at high continuous current.

Compared with STP36NF10 and IXTP30N10P, IRFR3410TRRPBF delivers superior thermal performance via D-Pak's low-R_θJC and optimized high-frequency switching behavior-making it the preferred choice for compact, high-density DC-DC converters where board-level heatsinking is mandatory.

Availability

IRFR3410TRRPBF is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, solar microinverters, and automotive 48 V DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFR3410TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-reliability switching power supplies and motor control systems operating from –55 °C to +175 °C.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IRFR3410TRRPBF supports 22 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating from the 31 A rating at 25 °C, using the linear derating factor of 0.71 W/°C above 25 °C case temperature.

Does this MOSFET require a gate resistor for safe operation?

Yes-a gate resistor (typically 5–20 Ω) is required to dampen ringing and limit peak gate current during switching. The datasheet specifies switching times measured with R_G = 9.1 Ω; omitting it risks oscillation, excessive dv/dt stress, and potential gate oxide damage due to parasitic inductance in the gate loop.

Can the body diode be used for synchronous rectification?

No-the body diode is not rated for synchronous rectification duty. While it conducts during dead-time, its 84 ns reverse recovery time and 260 nC Q_rr cause significant switching loss and EMI. External Schottky or SiC diodes are recommended for true synchronous rectifier roles in high-frequency designs.

Is IRFR3410TRRPBF pin-compatible with IRFR3415?

No-IRFR3415 has identical D-Pak package and pinout (G-S-D), but differs in V_DS (150 V), R_DS(on) (42 mΩ), and Q_g (65 nC). Substitution requires verification of voltage margin, thermal design, and gate drive capability; it is not a drop-in replacement.

IRFR3410TRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 39mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1690 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3410TRRPBF FAQ

1.How can I place an order for IRFR3410TRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3410TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3410TRRPBF reliable?

The price and inventory of IRFR3410TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3410TRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR3410TRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3410TRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3410TRRPBF?

IRFR3410TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3410TRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3410TRRPBF?

For technical support, including IRFR3410TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3410TRRPBF requirements.

6.How does Aetrix verify that IRFR3410TRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3410TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3410TRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR3410TRRPBF?

All IRFR3410TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3410TRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3410TRRPBF part is unused and in its original packaging.

Return procedure for IRFR3410TRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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