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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3411PBF

Name: IRFR3411PBF
Brand: Infineon Technologies
SKU: IRFR3411PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3411PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3411PBF.pdf

Description:: MOSFET N-CH 100V 32A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR3411PBF from Infineon Technologies (formerly International Rectifier) is a 100V, 32A N-channel enhancement-mode power MOSFET in D-Pak (TO-252) surface-mount package, featuring 44 mΩ R_DS(on) at V_GS = 10 V and 16 A, 175°C maximum junction temperature, and fully avalanche-rated operation. It serves as a high-efficiency main or synchronous rectifier switch in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IRFR3411PBF datasheet, IRFR3411PBF pinout, IRFR3411PBF application, or IRFR3411PBF equivalent, key selection criteria include its 100V V_DS, 44 mΩ on-resistance, 130 W power dissipation at T_C = 25°C, fast 35 ns rise/fall times, and rugged 700 mJ single-pulse avalanche energy rating.

Technical Context

This HEXFET® device uses advanced planar processing to achieve ultra-low specific on-resistance while maintaining robust dv/dt immunity (7.0 V/ns) and full unclamped inductive switching (UIS) capability. Its gate charge profile (Q_g = 48–71 nC, Q_gd = 14–21 nC) supports efficient high-frequency switching up to several hundred kHz in hard-switched topologies.

The integrated body diode exhibits 1.2 V forward voltage at 16 A and 25°C, with reverse recovery time (t_rr) of 115–170 ns and Q_rr of 505–760 nC under standardized conditions (I_F = 16 A, di/dt = 100 A/µs), enabling use in freewheeling and synchronous rectification roles without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands up to 100 V drain-source blocking voltage, suitable for 48 V bus and 100 V industrial input stages.
R_DS(on)	44 mΩ max @ V_GS = 10 V, I_D = 16 A - Enables <1.5 W conduction loss at 16 A, critical for thermal management in compact PCB layouts.
I_D (T_C = 25°C)	32 A continuous - Supports high-current output stages in SMPS and motor gate drivers without forced air cooling.
E_AS	700 mJ single-pulse avalanche energy - Allows reliable operation during transient overvoltage events without snubber circuits.
t_r/t_f	35 ns typical rise/fall time - Reduces switching losses in 100–500 kHz DC-DC converters and enables tight dead-time control.
Q_g	48–71 nC total gate charge - Determines required gate driver peak current (e.g., >1.4 A for 50 ns turn-on) and influences drive-stage component sizing.

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for thermal conduction; optimized for vapor-phase and infrared reflow soldering. Straight-lead I-Pak variant (IRFU3411PbF) is through-hole compatible.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal requiring ≥±20 V absolute rating; 9–14 nC Q_gs dictates Miller-effect immunity and drive loop stability.
Pin 2 (D)	Drain	Main high-side or low-side power terminal; electrically connected to exposed copper pad for thermal and current path integrity.
Pin 3 (S)	Source	Reference node for gate drive and current sensing; internal source inductance (L_S) affects switching waveform ringing and di/dt capability.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	36–44 mΩ ensures <0.7 W conduction loss at 12 A, reducing heatsink requirements in space-constrained designs.
Full avalanche rating	Rated for repetitive and single-pulse UIS events up to 700 mJ, eliminating need for external clamping in inductive load switching.
High dv/dt immunity	7.0 V/ns rated diode recovery dv/dt prevents false turn-on during commutation, enhancing system reliability in noisy environments.
Lead-free and RoHS-compliant	Pb-free termination and assembly meet consumer-level environmental compliance without derating or process change.

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: 48 V input to 12 V/20 A output step-down converter in telecom power shelf.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300 kHz with 50% duty cycle.

Use Value: 44 mΩ R_DS(on) limits conduction loss to 17.6 W at 20 A, enabling natural convection cooling on 1"² FR-4 PCB.

Use Scenario: H-bridge driver for 24 V, 15 A brushed motor in automated warehouse conveyor.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current with 100% duty-cycle capability.

Use Value: 130 W power dissipation rating and 175°C T_J allow sustained operation under stall conditions without thermal shutdown.

Industrial AC-DC PFC Stage

LED Constant-Current Driver

Use Scenario: Boost switch in active PFC front-end for 2 kW industrial UPS.

IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) topology at 65 kHz.

Use Value: 700 mJ E_AS withstands line surges and inductor saturation events, reducing need for overvoltage protection components.

Use Scenario: Primary-side switch in isolated flyback LED driver for street lighting (100–277 VAC input).

IC Role / Device Role / Timing Role: Power switch controlling primary current with zero-voltage switching (ZVS) assist.

Use Value: 115–170 ns t_rr and low Q_rr minimize diode reverse recovery loss, improving efficiency above 90% at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	100 V, 110 A, 9.5 mΩ R_DS(on), TO-220 package, lower R_DS(on) but larger footprint and higher gate charge (120 nC).	Requires heatsink mounting and higher-drive gate circuitry; better suited for high-current, low-frequency (<100 kHz) applications.	Select when conduction loss dominates and board space allows through-hole mounting.
IXTP110N10T	100 V, 110 A, 10.5 mΩ R_DS(on), TO-220, 125 nC Q_g, no specified avalanche rating.	Lacks documented UIS capability; unsuitable for unclamped inductive switching without external protection.	Prefer only in non-inductive or snubber-protected circuits where peak current exceeds 32 A.

Compared with STP110N10F7 and IXTP110N10T, the IRFR3411PBF offers superior thermal integration via D-Pak's low 1.2 °C/W R_θJC, verified avalanche ruggedness, and optimized gate charge for medium-frequency switching-making it ideal for compact, high-reliability surface-mount power stages.

Availability

IRFR3411PBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and industrial power supplies requiring stable component supply, lead-free compliance, and surface-mount manufacturability.

Supply support for IRFR3411PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support the HEXFET® portfolio with full documentation, simulation models, and application expertise.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion in industrial, automotive, and computing applications-designed for low conduction and switching losses in hard-switched and resonant topologies.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR3411PBF supports 23 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D-Pak package and must be validated against actual PCB layout, copper area, and ambient conditions using the provided R_θJA = 50 °C/W (PCB mount) and R_θJC = 1.2 °C/W values.

Is the IRFR3411PBF suitable for synchronous rectification in a 100 kHz LLC resonant converter?

Yes-the device's 35 ns rise/fall times, low Q_gd/Q_gs ratio (~1.6), and 1.2 V body diode forward voltage at 16 A enable effective synchronous rectification in LLC topologies. However, its 115–170 ns reverse recovery time requires careful dead-time tuning to avoid shoot-through, especially at light loads.

Does the IRFR3411PBF have a specified gate threshold voltage range?

Yes-V_GS(th) is specified from 2.0 V to 4.0 V at I_D = 250 µA and V_DS = V_GS. This range indicates consistent turn-on behavior across production lots and supports reliable logic-level drive (e.g., 3.3 V or 5 V microcontroller outputs) when combined with appropriate gate resistor selection.

Can the IRFR3411PBF replace the IRFR3711 in an existing design?

No-the IRFR3711 is a 30 V, 66 A MOSFET with 12 mΩ R_DS(on); substituting the 100 V, 32 A, 44 mΩ IRFR3411PBF would increase conduction loss by ~3.7× and reduce current capacity by ~50%. Voltage rating compatibility does not imply functional interchangeability; electrical and thermal validation is mandatory.

IRFR3411PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 44mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1960 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 130W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3411PBF FAQ

1.How can I place an order for IRFR3411PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3411PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3411PBF reliable?

The price and inventory of IRFR3411PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3411PBF is usually 5 days.

3.What payment methods are accepted for IRFR3411PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3411PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3411PBF?

IRFR3411PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3411PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3411PBF?

For technical support, including IRFR3411PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3411PBF requirements.

6.How does Aetrix verify that IRFR3411PBF is sourced from the original manufacturer or authorized distributors?

All IRFR3411PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3411PBF meets industry standards.

7.What is the process for return or replacement of IRFR3411PBF?

All IRFR3411PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3411PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3411PBF part is unused and in its original packaging.

Return procedure for IRFR3411PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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