Infineon Technologies IRFR3504PBF
- Part No.:
- IRFR3504PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR3504PBF.pdf
- Description:
- MOSFET N-CH 40V 30A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:3,755
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFR3504PBF from Infineon Technologies (formerly International Rectifier) is a 40V, 87A N-channel enhancement-mode power MOSFET in D-Pak surface-mount package, featuring 9.2mΩ RDS(on) at VGS = 10V, 175°C maximum junction temperature, and 240mJ single-pulse avalanche energy - deployed in DC-DC synchronous buck converters, motor drive half-bridges, and industrial power supplies.
For engineers reviewing the IRFR3504PBF datasheet, IRFR3504PBF pinout, IRFR3504PBF application, or IRFR3504PBF equivalent, key selection criteria include its low conduction loss at high current, fast switching (tr = 53ns, tf = 22ns), body diode recovery performance (trr = 53–80ns), and thermal robustness under repetitive avalanche stress.
Technical Context
This HEXFET® device uses advanced silicon processing to minimize on-resistance per die area while maintaining rated 40V VDS breakdown and ±20V gate voltage tolerance. Its 7.8–9.2mΩ RDS(on) enables high-efficiency operation at 30A continuous drain current with PCB-mount thermal resistance of 50°C/W.
The MOSFET supports fast switching via low gate charge (Qg = 48–71nC, Qgd = 13–20nC) and exhibits controlled body diode behavior (VSD = 1.3V at 30A, trr = 53ns typical), making it suitable for hard-switched topologies where reverse recovery impacts EMI and losses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40V - Maximum blocking voltage before avalanche onset; defines use in ≤36V nominal bus systems. |
| RDS(on) | 7.8–9.2mΩ @ VGS = 10V, ID = 30A - Directly determines I²R conduction loss in high-current paths. |
| ID (TC = 25°C) | 87A - Silicon-limited continuous drain current; usable up to 61A at 100°C case temperature. |
| EAS | 240mJ (tested 480mJ) - Quantifies unclamped inductive switching robustness without external snubbing. |
| tr/tf | 53ns/22ns @ VDD = 20V, ID = 30A - Enables >500kHz switching in optimized gate-drive layouts. |
| Qg | 48–71nC - Gate charge magnitude governing driver power and switching transition time. |
| TJ max | +175°C - Allows sustained operation in thermally constrained enclosures without derating below ambient. |
Pinout & Package
D-Pak (TO-252AA) surface-mount package with gull-wing leads; designed for vapor-phase, infrared, or wave soldering. Thermal pad on drain connects directly to PCB copper for enhanced heat dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Tab/Drain) | Drain terminal (internally connected to exposed metal tab) | Primary current path and thermal interface; must be soldered to large copper pour for RθJC = 1.09°C/W. |
| Pin 2 (Source) | Source terminal | Reference node for gate drive and current sensing; low-inductance layout critical for switching stability. |
| Pin 3 (Gate) | Gate terminal | High-impedance control input; requires <10Ω series resistance to damp ringing during fast transitions. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 7.8mΩ typ. at 10V gate drive - reduces conduction loss by ≥35% vs. legacy 40V MOSFETs in 30A applications. |
| 175°C operating temperature | Rated junction limit - enables full current delivery in sealed industrial enclosures without forced air. |
| Fast switching speed | tr = 53ns, tf = 22ns - minimizes overlap loss in synchronous rectification and PWM control. |
| Repetitive avalanche rating | Allowed up to Tjmax - supports reliable operation in inductive load switching without external clamping. |
| Low gate-to-drain charge (Qgd) | 13–20nC - suppresses Miller-induced shoot-through in half-bridge configurations. |
Applications
| DC-DC Synchronous Buck Converter | Brushless DC Motor Half-Bridge |
|---|---|
Use Scenario: High-current step-down regulation in telecom power modules delivering 12V@40A from 48V input. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, switching at 300–500kHz with 100ns dead-time control. Use Value: 9.2mΩ RDS(on) cuts conduction loss to <1.1W at 40A, enabling >95% efficiency without heatsink. |
Use Scenario: 24V BLDC drive for HVAC blowers requiring 15A phase current and 20kHz PWM. IC Role / Device Role / Timing Role: High-side or low-side switch in three-phase inverter leg, commutated with 600ns minimum off-time. Use Value: 240mJ EAS withstands inductive kickback during rapid direction reversal without failure. |
| Industrial LED Driver | UPS Inverter Output Stage |
Use Scenario: Constant-current dimming circuit for high-bay LED fixtures (36V, 10A string). IC Role / Device Role / Timing Role: Primary PWM switch in flyback or buck-boost topology, operating at 100kHz. Use Value: 175°C Tjmax allows compact enclosure design with natural convection cooling only. |
Use Scenario: 230VAC output H-bridge in line-interactive UPS with battery backup. IC Role / Device Role / Timing Role: Low-side switch in full-bridge inverter, handling 25A RMS output current. Use Value: Fast tr/tf and low Qgd reduce switching loss and EMI generation during 50Hz/60Hz modulation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP40NF10L | RDS(on) = 12.5mΩ @ 10V, VDS = 100V, TO-220 package | Higher voltage rating but higher on-resistance and through-hole mounting | Select when 100V blocking is required and board space permits larger package. |
| AOB414 | RDS(on) = 8.0mΩ @ 10V, VDS = 40V, DFN5x6 package, no exposed drain tab | Lower thermal resistance (RθJA = 35°C/W) but requires careful PCB thermal via design | Select for ultra-thin designs where D-Pak height is prohibitive and thermal vias are feasible. |
Compared with STP40NF10L and AOB414, IRFR3504PBF offers superior thermal coupling via its solderable drain tab and proven avalanche ruggedness - critical for motor drives and uninterruptible power systems where transient overloads occur.
Availability
IRFR3504PBF is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor controllers, industrial LED drivers, and UPS inverters requiring stable component supply and long-term production continuity.
Supply support for IRFR3504PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support the HEXFET® portfolio with full documentation, reliability testing, and automotive-grade variants.
The HEXFET® Power MOSFET product line targets high-efficiency power conversion in industrial, computing, and renewable energy systems - emphasizing low RDS(on), avalanche ruggedness, and thermal reliability.
FAQ
What is the maximum continuous drain current for IRFR3504PBF at 100°C case temperature?
The maximum continuous drain current is 61A at TC = 100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal limitation of the D-Pak package rather than silicon capability, which remains rated for 87A at 25°C case temperature.
Does IRFR3504PBF have a qualified lead-free finish and RoHS compliance?
Yes, IRFR3504PBF carries the "PbF" suffix indicating lead-free termination and full compliance with EU RoHS Directive 2011/65/EU. The device uses matte tin plating over copper leads and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) for unlimited floor life.
Can IRFR3504PBF be used in linear (analog) mode operation?
No - IRFR3504PBF is not characterized or guaranteed for linear mode operation. Its Safe Operating Area (SOA) curve shows pulse-limited operation only; sustained linear bias risks thermal runaway due to positive temperature coefficient of RDS(on) and lack of SOA derating data beyond 10ms pulses.
What is the recommended gate resistor value for driving IRFR3504PBF in a 300kHz buck converter?
A 4.7Ω to 6.8Ω non-inductive gate resistor is recommended to balance switching speed and gate-drive ringing. At 300kHz, this yields ~15–20ns effective rise/fall control while limiting peak gate current to <2A and suppressing oscillation induced by LS = 7.5nH and LD = 4.5nH internal inductances.
IRFR3504PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 9.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 71 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2150 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 140W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR3504PBF FAQ
1.How can I place an order for IRFR3504PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR3504PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR3504PBF reliable?
The price and inventory of IRFR3504PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3504PBF is usually 5 days.
3.What payment methods are accepted for IRFR3504PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3504PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR3504PBF?
IRFR3504PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR3504PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR3504PBF?
For technical support, including IRFR3504PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3504PBF requirements.
6.How does Aetrix verify that IRFR3504PBF is sourced from the original manufacturer or authorized distributors?
All IRFR3504PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3504PBF meets industry standards.
7.What is the process for return or replacement of IRFR3504PBF?
All IRFR3504PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3504PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR3504PBF part is unused and in its original packaging.
Return procedure for IRFR3504PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFR3504PBF Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…

