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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3504TRLPBF

Name: IRFR3504TRLPBF
Brand: Infineon Technologies
SKU: IRFR3504TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3504TRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3504TRLPBF.pdf

Description:: MOSFET N-CH 40V 30A DPAK

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Product details

Overview

IRFR3504TRLPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) surface-mount package, rated for 40 V V_DS, 9.2 mΩ R_DS(on) at V_GS = 10 V and I_D = 30 A, with 175°C maximum junction temperature and 240 mJ single-pulse avalanche energy. It serves as a high-efficiency synchronous rectifier or primary-side switch in DC-DC converters, motor drivers, and power supply OR-ing circuits.

For engineers reviewing the IRFR3504TRLPBF datasheet, IRFR3504TRLPBF pinout, IRFR3504TRLPBF application, or IRFR3504TRLPBF equivalent, key selection criteria include its low R_DS(on) at 10 V gate drive, fast switching (t_r = 53 ns, t_f = 22 ns), robust avalanche capability, and thermal resistance of 1.09°C/W (junction-to-case), critical for high-current, thermally constrained PCB layouts.

Technical Context

This device employs HEXFET® silicon process technology to minimize conduction loss while maintaining high dV/dt immunity and low gate charge (Q_g = 48–71 nC). Its body diode exhibits V_SD = 1.3 V at I_S = 30 A and T_J = 25°C, with reverse recovery time t_rr = 53–80 ns under specified conditions.

The MOSFET supports unclamped inductive switching up to I_AS = 12–30 A and E_AS = 240 mJ (tested 480 mJ), enabled by controlled avalanche design. Thermal performance is characterized by Z_thJC transient curves and linear derating factor of 0.92 W/°C above 25°C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage before avalanche onset; defines use in ≤36 V nominal systems.
R_DS(on)	9.2 mΩ @ V_GS = 10 V, I_D = 30 A - Enables <1 W conduction loss at 30 A, reducing heatsink requirements.
I_D (continuous)	30 A @ T_C = 25°C - Package-limited current rating; actual silicon limit is 87 A but constrained by D-Pak thermal path.
E_AS	240 mJ - Single-pulse avalanche energy rating; supports reliable operation during inductive turn-off transients.
Q_g	48–71 nC - Total gate charge determines driver strength requirement; enables efficient 100–500 kHz switching with standard gate drivers.
t_r/t_f	53 ns / 22 ns - Fast edge rates reduce switching losses and EMI generation in hard-switched topologies.
R_θJC	1.09 °C/W - Junction-to-case thermal resistance; allows direct thermal pad mounting to copper pour or heatsink for high-power density designs.

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain tab for thermal and electrical connection; compatible with vapor phase, infrared, and wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side switch node; carries full load current.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET control node; requires <71 nC charge for full enhancement; sensitive to ESD.
Pin 3 (Drain)	Drain terminal (D)	High-side power node; electrically and thermally connected to exposed metal tab; must be routed with low-inductance layout.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	9.2 mΩ at 10 V drive enables <0.9 W conduction loss at 30 A, improving efficiency in high-current 12–24 V systems.
175°C operating temperature	Extended thermal margin allows sustained operation in sealed enclosures or high-ambient environments without derating.
Fast switching speed	53 ns rise / 22 ns fall times support >300 kHz PWM frequencies with minimal switching loss penalty.
Repetitive avalanche rated	Rated for repeated unclamped inductive switching up to T_Jmax, eliminating need for external snubbers in many flyback or motor drive applications.

Applications

DC-DC Synchronous Rectifier

Brushless DC Motor Driver

Use Scenario: Secondary-side rectification in isolated 12 V/24 V buck-derived DC-DC converters for telecom and industrial power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; commutated synchronously with primary-side switch timing.

Use Value: Reduces forward conduction loss by >50% vs. 40 V Schottky, increasing converter efficiency from ~88% to >93% at full load.

Use Scenario: High-side or low-side switching in 3-phase BLDC inverter stages driving fans, pumps, or compressors.

IC Role / Device Role / Timing Role: Power switch in half-bridge leg; operated with 60–200 kHz PWM and dead-time control.

Use Value: Low R_DS(on) and fast switching minimize conduction + switching losses, enabling compact heatsink design at 1–3 kW output.

OR-ing Diode Replacement

Hot-Swap Controller FET

Use Scenario: Redundant 12 V power rail combining in server backplanes and telecom line cards.

IC Role / Device Role / Timing Role: Ideal diode replacement; driven by external controller to emulate low-V_F diode behavior.

Use Value: Eliminates 0.4–0.5 V diode drop, reducing power loss by >3 W per rail at 10 A and enabling higher current density board layouts.

Use Scenario: Inrush current limiting and fault isolation in 48 V intermediate bus hot-swap modules.

IC Role / Device Role / Timing Role: Main pass FET controlled by dedicated hot-swap IC (e.g., LTC4215); subjected to frequent turn-on/turn-off cycles.

Use Value: Robust avalanche rating and 175°C T_J ensure reliability during repeated overcurrent events and thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NF20	200 V V_DS, 38 mΩ R_DS(on), TO-220 package	Higher voltage rating but higher on-resistance and through-hole mounting; unsuitable for space-constrained D-Pak layouts.	Select only when ≥100 V blocking is required and thermal mass from TO-220 is acceptable.
AOB414	40 V V_DS, 5.8 mΩ R_DS(on), DFN5x6 package, 3.2 W P_D	Lower R_DS(on) but lower power dissipation limit and no exposed drain tab; requires careful PCB thermal design.	Prefer for ultra-low-loss, low-current (<20 A) applications where DFN footprint and thermal via count can be optimized.

Compared with STP30NF20 and AOB414, IRFR3504TRLPBF offers the optimal balance of low R_DS(on), proven avalanche ruggedness, D-Pak manufacturability, and 30 A continuous current capability-making it preferred for mid-power industrial and telecom DC-DC and motor control designs.

Availability

IRFR3504TRLPBF is available at Aetrix Electronics and suitable for DC-DC converters, brushless DC motor drives, and OR-ing power distribution systems requiring stable component supply and long-term industrial availability.

Supply support for IRFR3504TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with heritage from International Rectifier's HEXFET® innovation.

This part belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in medium-power industrial and telecom power conversion systems.

FAQ

Is IRFR3504TRLPBF lead-free and RoHS compliant?

Yes. The "PbF" suffix confirms compliance with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 3 marking. Lead-free matte tin plating is applied to all terminations, and the device meets IPC/JEDEC J-STD-020D moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30°C/85% RH.

What is the maximum recommended gate drive voltage?

The absolute maximum V_GS is ±20 V, but the device is fully enhanced at V_GS = 10 V and characterized for R_DS(on) at that level. Driving above 12 V provides marginal R_DS(on) improvement but increases gate oxide stress and risk of overvoltage damage during transients; 10 V is the recommended nominal drive.

Can IRFR3504TRLPBF be used in parallel configurations?

Yes, due to its positive temperature coefficient of R_DS(on) (confirmed in Fig. 10), which promotes current sharing. However, layout symmetry-matched gate drive paths, source inductance, and thermal coupling-is essential. External gate resistors (≥1 Ω) are recommended to dampen oscillation and ensure simultaneous turn-on.

Does the body diode support continuous conduction mode (CCM) operation?

Yes. The intrinsic body diode has V_SD = 1.3 V at 30 A and T_J = 25°C, with t_rr = 53–80 ns and Q_rr = 86–130 nC. It is suitable for CCM in synchronous buck or LLC secondary-side rectification, though external Schottky clamping may be needed for very high-frequency (>1 MHz) or zero-voltage-switching designs.

IRFR3504TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2150 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3504TRLPBF FAQ

1.How can I place an order for IRFR3504TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3504TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3504TRLPBF reliable?

The price and inventory of IRFR3504TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3504TRLPBF is usually 5 days.

3.What payment methods are accepted for IRFR3504TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3504TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3504TRLPBF?

IRFR3504TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3504TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3504TRLPBF?

For technical support, including IRFR3504TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3504TRLPBF requirements.

6.How does Aetrix verify that IRFR3504TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3504TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3504TRLPBF meets industry standards.

7.What is the process for return or replacement of IRFR3504TRLPBF?

All IRFR3504TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3504TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3504TRLPBF part is unused and in its original packaging.

Return procedure for IRFR3504TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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