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Infineon Technologies IRFR3504TRPBF
- Part No.:
- IRFR3504TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR3504TRPBF.pdf
- Description:
- MOSFET N-CH 40V 30A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,725
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Product details
Overview
IRFR3504TRPBF from Infineon Technologies (formerly International Rectifier) is a 40V, 87A N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) surface-mount package, featuring 9.2mΩ RDS(on) at VGS = 10V, 175°C maximum junction temperature, and rated for repetitive avalanche energy up to 480mJ. It serves as a high-efficiency main or synchronous rectifier switch in DC-DC converters, motor drives, and power supplies.
For engineers reviewing the IRFR3504TRPBF datasheet, IRFR3504TRPBF pinout, IRFR3504TRPBF application, or IRFR3504TRPBF equivalent, key selection criteria include its low on-resistance at 30A, fast switching (tr = 53ns, tf = 22ns), robust avalanche capability, thermal resistance (RθJC = 1.09°C/W), and D-Pak mounting compatibility with vapor-phase and reflow processes.
Technical Context
This HEXFET® device uses advanced silicon processing to minimize conduction loss while maintaining high pulse current capability (IDM = 350A) and fast turn-on/turn-off dynamics. Its gate charge profile (Qg = 48–71nC, Qgd = 13–20nC) supports efficient high-frequency switching up to several hundred kHz in hard-switched topologies.
The integrated body diode exhibits VSD = 1.3V at IS = 30A and TJ = 25°C, with trr = 53–80ns and Qrr = 86–130nC under specified conditions-critical for synchronous rectification and freewheeling performance in buck and half-bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40V - Maximum drain-source blocking voltage; defines upper limit for input/output rail voltage in step-down or H-bridge applications. |
| RDS(on) | 7.8–9.2mΩ @ VGS = 10V, ID = 30A - Directly determines I²R conduction loss and thermal rise in continuous-current operation. |
| ID @ TC = 25°C | 87A - Silicon-limited continuous drain current; usable in high-current PCB layouts with adequate copper area and heatsinking. |
| EAS (tested) | 480mJ - Verified single-pulse avalanche energy rating; enables reliable operation during inductive switching transients without derating. |
| RθJC | 1.09°C/W - Junction-to-case thermal resistance; allows direct thermal interface to heatsink or copper plane for power dissipation up to 140W. |
| tr/tf | 53ns/22ns @ ID = 30A, RG = 6.8Ω - Fast edge rates reduce switching loss and EMI generation in high-frequency SMPS designs. |
| Qg | 48–71nC - Total gate charge magnitude; determines required gate driver peak current and influences drive-stage power loss. |
Pinout & Package
IRFR3504TRPBF is housed in a D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard D-Pak footprint: Gate (left), Drain (center pad), Source (right).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control terminal | Receives 0–10V logic-level signal to modulate channel conductivity; requires <200nA leakage current handling at ±20V bias. |
| Drain (D) | High-side power terminal | Connected to load or input rail; electrically tied to exposed copper pad for low-inductance, high-current return path and thermal conduction. |
| Source (S) | Reference and return terminal | Serves as common reference for gate drive and current sensing; carries full load current and body diode reverse recovery charge. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra Low On-Resistance | 9.2mΩ RDS(on) at 30A enables <0.8W conduction loss at 30A, reducing thermal stress in compact power stages. |
| 175°C Operating Temperature | Extended junction rating allows sustained operation in high-ambient environments (e.g., automotive under-hood, industrial enclosures) without forced cooling. |
| Fast Switching Speed | 53ns rise / 22ns fall time minimizes transition loss in 200–500kHz DC-DC converters, improving efficiency above 90%. |
| Repetitive Avalanche Rated | Rated for repeated unclamped inductive switching events up to TJmax, eliminating need for external snubbers in relay/motor drive circuits. |
| D-Pak Surface-Mount Package | TO-252 footprint supports automated assembly and offers superior thermal performance vs. SO-8, with RθJC = 1.09°C/W. |
Applications
| DC-DC Buck Converter | Brushless DC Motor Drive |
|---|---|
|
Use Scenario: High-current 12V-to-5V/3.3V point-of-load converter in telecom base station power modules. IC Role / Device Role: Synchronous rectifier switch replacing Schottky diode to reduce conduction loss and improve light-load efficiency. Use Value: Achieves >94% efficiency at 30A output due to 9.2mΩ RDS(on) and fast body diode recovery (trr = 53ns). |
Use Scenario: Half-bridge leg in 24V BLDC fan controller for HVAC systems. IC Role / Device Role: Low-side switching element controlling phase current commutation with PWM frequency up to 30kHz. Use Value: Withstands 350A pulsed drain current and repetitive avalanche during PWM dead-time transitions, ensuring long-term reliability. |
| Industrial LED Driver | Automotive Body Control Module |
|
Use Scenario: Constant-current dimming stage driving high-power 48V LED strings in street lighting fixtures. IC Role / Device Role: Primary switching transistor in buck-boost topology regulating LED current up to 8A average. Use Value: 175°C junction rating permits operation in sealed outdoor enclosures without active cooling, reducing system BOM cost. |
Use Scenario: Load switch for 12V accessory circuits (e.g., window lift, seat heater) in passenger vehicle BCMs. IC Role / Device Role: Smart high-side switch providing overcurrent protection, thermal shutdown, and diagnostic feedback via gate monitoring. Use Value: Integrated avalanche ruggedness eliminates need for external TVS clamping during load dump transients (ISO 7637-2 Pulse 5a). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL120N4LH5AG | RDS(on) = 3.5mΩ @ 10V (lower), but in PowerFLAT 5x6 package with higher RθJA (60°C/W); no avalanche rating published. | Better conduction loss at high current, but less robust under inductive fault conditions; requires careful thermal layout. | Select when board space is constrained and avalanche stress is absent; verify thermal margin with PCB copper area. |
| ON Semiconductor NTMFS4C09NT1G | RDS(on) = 9.0mΩ @ 10V, same D-Pak package, but rated only to 150°C junction and 200mJ EAS. | Lower thermal and avalanche margins; suitable for consumer-grade applications where ambient stays below 85°C. | Prefer for cost-sensitive, non-automotive designs where full 175°C and 480mJ capability are not required. |
Compared with STL120N4LH5AG and NTMFS4C09NT1G, IRFR3504TRPBF delivers superior thermal resilience (175°C), verified high-energy avalanche tolerance (480mJ), and proven D-Pak manufacturability-making it the preferred choice for industrial and automotive power stages demanding long-term reliability under transient stress.
Availability
IRFR3504TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, LED drivers, and automotive body control modules requiring stable component supply across extended temperature and lifetime requirements.
Supply support for IRFR3504TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.
The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-reliability switching in industrial power conversion, motor control, and automotive electrification systems-prioritizing ruggedness, thermal performance, and manufacturability.
FAQ
Is IRFR3504TRPBF suitable for logic-level gate drive?
No-IRFR3504TRPBF is not a logic-level MOSFET. Its gate threshold voltage (VGS(th)) ranges from 2.0V to 4.0V, but it requires 10V gate drive to achieve rated RDS(on) of 9.2mΩ. Driving it with 3.3V or 5V logic will result in significantly higher on-resistance (>50mΩ) and excessive conduction loss. A dedicated gate driver or level-shifting circuit is required for full performance.
What is the maximum continuous drain current at 100°C case temperature?
At TC = 100°C, the continuous drain current is 61A (silicon-limited), as specified in the Absolute Maximum Ratings table. This value assumes proper PCB thermal design with ≥1in² 2oz copper pour under the exposed drain pad and no additional heatsink. Derating follows the linear factor of 0.92W/°C beyond 25°C case temperature.
Does IRFR3504TRPBF have lead-free and RoHS-compliant construction?
Yes-IRFR3504TRPBF is manufactured with lead-free terminations and complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level (MSL) 1. The "PbF" suffix confirms lead-free packaging, and the device is compatible with standard Pb-free reflow profiles per IPC/JEDEC J-STD-020.
Can IRFR3504TRPBF be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) (see Fig.10) ensures inherent current sharing stability when paralleled. However, matched gate drive layout (equal trace length/inductance), symmetrical source routing, and individual gate resistors (≥5Ω) are mandatory to prevent oscillation and ensure balanced dynamic current distribution across multiple devices.
IRFR3504TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 9.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 71 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2150 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 140W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR3504TRPBF FAQ
1.How can I place an order for IRFR3504TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR3504TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR3504TRPBF reliable?
The price and inventory of IRFR3504TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3504TRPBF is usually 5 days.
3.What payment methods are accepted for IRFR3504TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3504TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR3504TRPBF?
IRFR3504TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR3504TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR3504TRPBF?
For technical support, including IRFR3504TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3504TRPBF requirements.
6.How does Aetrix verify that IRFR3504TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFR3504TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3504TRPBF meets industry standards.
7.What is the process for return or replacement of IRFR3504TRPBF?
All IRFR3504TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3504TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR3504TRPBF part is unused and in its original packaging.
Return procedure for IRFR3504TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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