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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3504TRRPBF

Name: IRFR3504TRRPBF
Brand: Infineon Technologies
SKU: IRFR3504TRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3504TRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3504TRRPBF.pdf

Description:: MOSFET N-CH 40V 30A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR3504TRRPBF from Infineon Technologies (formerly International Rectifier) is a 40 V, 87 A N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) surface-mount package, featuring 7.8 mΩ typical R_DS(on) at V_GS = 10 V, 175°C maximum junction temperature, and rated for repetitive avalanche energy up to 240 mJ - used in DC-DC converters, motor drive half-bridges, and synchronous rectification stages.

For engineers reviewing the IRFR3504TRRPBF datasheet, IRFR3504TRRPBF pinout, IRFR3504TRRPBF application, or IRFR3504TRRPBF equivalent, key selection criteria include its low conduction loss at high current, fast switching (t_r = 53 ns, t_f = 22 ns), thermal robustness under transient load, and validated unclamped inductive switching capability.

Technical Context

This device implements a planar silicon HEXFET® structure optimized for low R_DS(on)/area and high avalanche ruggedness. Its gate charge profile (Q_g = 48–71 nC, Q_gd = 13–20 nC) supports efficient hard-switching in 20–100 kHz power stages, while the body diode exhibits t_rr = 53–80 ns and Q_rr = 86–130 nC at I_F = 30 A.

The D-Pak thermomechanical design delivers R_θJC = 1.09°C/W and enables 140 W continuous power dissipation at T_C = 25°C, with linear derating of 0.92 W/°C above that point - critical for thermally constrained PCB layouts in industrial and automotive power modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage before avalanche; suitable for 24 V and 36 V nominal bus systems.
R_DS(on) (typ)	7.8 mΩ @ V_GS = 10 V, I_D = 30 A - Enables <1.5 W conduction loss at 30 A, reducing heatsink requirements.
I_D (cont, T_C=25°C)	87 A - Silicon-limited current rating; actual PCB-mount limit is 30 A due to package thermal constraints.
E_AS (single pulse)	240 mJ - Confirmed unclamped inductive switching capability; supports reliable operation in flyback and buck-boost topologies.
t_r/t_f	53 ns / 22 ns @ V_DD = 20 V, I_D = 30 A - Fast edge rates minimize switching losses in medium-frequency SMPS designs.
Q_g	48–71 nC - Gate drive energy requirement determines driver sizing; compatible with common 1–2 A peak gate drivers.
T_J max	175°C - Extended thermal margin allows sustained operation in sealed enclosures or high ambient environments.

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for thermal conduction and mechanical anchoring. Standard vapor-phase/reflow soldering compatible.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side switch node; carries full load current.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET control node; requires <71 nC charge for full enhancement; sensitive to ESD.
Pin 3 (Drain)	Power output (D)	Connected to exposed copper pad; serves as primary heat path to PCB; handles high-voltage switching node.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7.8 mΩ typ. at 10 V drive - reduces I²R losses by >30% vs. legacy 40 V MOSFETs in 20–30 A applications.
Repetitive avalanche rating	Rated for repeated unclamped inductive switching up to T_J = 175°C - eliminates need for external snubbers in relay drivers and solenoid controls.
Fast body diode	t_rr = 53 ns, Q_rr = 86 nC - minimizes reverse recovery loss and EMI in synchronous rectifier and bidirectional DC-DC stages.
Thermal robustness	R_θJC = 1.09°C/W - enables direct thermal coupling to inner-layer copper pours, supporting >100 W power density on 2-layer boards.

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Rectifier

Use Scenario: High-current H-bridge for 24 V brushed DC motors in industrial actuators and robotic joints.

IC Role / Device Role / Timing Role: Low-side switching element handling 30–50 A peak current with PWM frequencies up to 50 kHz.

Use Value: 7.8 mΩ R_DS(on) limits conduction loss to <4.5 W at 50 A, enabling compact heatsink-free design at 85% efficiency.

Use Scenario: Secondary-side synchronous rectification in isolated 48 V–12 V buck-derived telecom power supplies.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; driven complementary to primary-side switch.

Use Value: Body diode t_rr ≤ 80 ns and low Q_rr reduce cross-conduction loss and improve light-load efficiency by 2–3% over diode solutions.

Automotive Load Switch

Industrial UPS Inverter Stage

Use Scenario: 12 V/24 V battery-powered electronic control units requiring controlled hot-swap and short-circuit protection.

IC Role / Device Role / Timing Role: High-side or low-side load switch with integrated avalanche energy absorption.

Use Value: 240 mJ single-pulse E_AS withstands inductive kickback from solenoids and relays without external clamping.

Use Scenario: Full-bridge inverter stage in 1–3 kVA uninterruptible power supplies converting 48 V DC to 230 V AC.

IC Role / Device Role / Timing Role: Low-side switch in each leg; operated at 16–20 kHz with dead-time control.

Use Value: 175°C T_J max and 0.92 W/°C derating allow stable operation under sustained 60–70°C case temperatures in enclosed cabinets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP40NF10L	R_DS(on) = 12.5 mΩ @ 10 V; V_DSS = 100 V; TO-220 package; no avalanche rating specified.	Higher voltage headroom but higher conduction loss; through-hole mounting limits board density.	Prefer when 100 V blocking is required and thermal mass from TO-220 aids transient surge handling.
IXTP44N10P	R_DS(on) = 10.5 mΩ @ 10 V; V_DSS = 100 V; TO-220 package; 175°C T_J; specified E_AS = 320 mJ.	Higher voltage rating and superior avalanche energy, but larger footprint and 35% higher R_DS(on).	Select when operating near 48 V rails or where enhanced avalanche margin justifies increased conduction loss.

Compared with STP40NF10L and IXTP44N10P, IRFR3504TRRPBF offers the lowest R_DS(on) and smallest footprint for 40 V systems, making it optimal for space-constrained, high-efficiency 24–36 V power stages where voltage margin is tightly managed.

Availability

IRFR3504TRRPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and industrial load switches requiring stable component supply, RoHS-compliant packaging, and long-term production continuity.

Supply support for IRFR3504TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-current, medium-voltage switching in industrial motor control, power supplies, and battery-powered equipment.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR3504TRRPBF supports 61 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from the 87 A rating at 25°C, governed by the device's 0.92 W/°C linear derating factor and R_θJC = 1.09°C/W thermal resistance.

Does this MOSFET require a gate resistor for safe switching?

Yes - a series gate resistor (typically 2.2–10 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent unintended turn-on due to dv/dt coupling. The 48–71 nC total gate charge and 13–20 nC Miller charge make it susceptible to oscillation without proper gate drive impedance control.

Can IRFR3504TRRPBF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (normalized R_DS(on) increases with junction temperature, per Fig.10) ensures inherent current sharing stability. Parallel operation requires matched layout, symmetrical gate drive paths, and individual gate resistors to avoid dynamic imbalance during switching transitions.

Is the body diode suitable for freewheeling in boost converters?

Yes - the body diode has characterized reverse recovery parameters: t_rr = 53–80 ns and Q_rr = 86–130 nC at I_F = 30 A, TJ = 25°C. These values support reliable freewheeling in 100–500 kHz boost stages, though synchronous rectification with external timing yields higher efficiency.

IRFR3504TRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2150 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3504TRRPBF FAQ

1.How can I place an order for IRFR3504TRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3504TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3504TRRPBF reliable?

The price and inventory of IRFR3504TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3504TRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR3504TRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3504TRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3504TRRPBF?

IRFR3504TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3504TRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3504TRRPBF?

For technical support, including IRFR3504TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3504TRRPBF requirements.

6.How does Aetrix verify that IRFR3504TRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3504TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3504TRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR3504TRRPBF?

All IRFR3504TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3504TRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3504TRRPBF part is unused and in its original packaging.

Return procedure for IRFR3504TRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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