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Infineon Technologies IRFR3504ZTR

Part No.:
IRFR3504ZTR
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR3504ZTR.pdf
Description:
MOSFET N-CH 40V 42A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,134

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Product details

Overview

IRFR3504ZTR from Infineon Technologies (formerly International Rectifier) is an N-channel automotive-grade HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 40V VDSS, 9.0mΩ RDS(on) at VGS = 10V, and 42A continuous drain current at TC = 25°C. It features 175°C maximum junction temperature, fast switching (tr = 74ns, tf = 38ns), and rated repetitive avalanche capability - deployed in engine control units, DC-DC converters, and motor drivers where high reliability under thermal stress is required.

For engineers reviewing the IRFR3504ZTR datasheet, IRFR3504ZTR pinout, IRFR3504ZTR application, or IRFR3504ZTR equivalent, key selection criteria include its low on-resistance per silicon area, validated 175°C operation, body diode recovery performance (trr = 18–27ns, Qrr = 9.2–14nC), and thermal resistance (RθJC = 1.66°C/W) for PCB-mount thermal design.

Technical Context

This MOSFET employs advanced planar HEXFET® processing to minimize RDS(on) while maintaining robust avalanche ruggedness. Its gate threshold voltage (VGS(th) = 2.0–4.0V) supports standard 3.3V/5V logic-level drive when used with appropriate gate resistors, and its low Qg (30–45nC) enables efficient high-frequency switching up to several hundred kHz.

The integrated body diode exhibits low forward voltage (VSD ≤ 1.3V at 42A) and controlled reverse recovery (Qrr = 9.2–14nC), making it suitable for synchronous rectification and freewheeling in hard-switched topologies. Thermal design is anchored by a verified RθJC of 1.66°C/W and SOA-limited operation up to 100°C case temperature.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 40V - Maximum blocking voltage before avalanche onset; defines safe operating range in 12V/24V automotive systems.
RDS(on) @ VGS=10V 9.0mΩ max - Enables <1.6W conduction loss at 42A, critical for thermally constrained ECU power stages.
ID @ TC=25°C 42A - Continuous drain current rating under ideal heatsinking; derates linearly above 25°C case temp.
tr/tf 74ns/38ns - Fast edge rates reduce switching losses in PWM-driven loads like solenoids and BLDC gate drivers.
EAS 310mJ - Single-pulse avalanche energy rating confirms ruggedness during inductive load turn-off transients.
TJ max 175°C - Extended junction temperature allows operation in under-hood environments without derating.
Qg 45nC max - Total gate charge determines required gate driver peak current (e.g., >3A for 100ns rise time).

Pinout & Package

IRFR3504ZTR uses the surface-mount D-Pak (TO-252) package with exposed drain pad for thermal enhancement. The package measures 6.73 × 6.22 × 2.39 mm and is optimized for PCB copper pour thermal dissipation.

Pin/Terminal Circuit Role Design Meaning
Drain (D) Main current-carrying terminal (connected to exposed pad) Primary heat path to PCB; must be soldered to ≥250mm² copper area for RθJC = 1.66°C/W performance.
Source (S) Reference node for gate drive and current return path Low-inductance connection essential for stable switching; internal source inductance LS = 7.5nH affects ringing.
Gate (G) Control electrode for channel modulation High-impedance input requiring <15Ω series resistor to damp oscillation and limit dV/dt-induced turn-on.

Key Features

Feature Design Value
Ultra-low RDS(on) 9.0mΩ @ 10V ensures <1.6W conduction loss at full 42A load - reduces heatsink size in space-constrained modules.
175°C junction rating Enables uninterrupted operation in under-hood ambient up to 125°C with proper PCB thermal design.
Repetitive avalanche rated Validated for repeated unclamped inductive switching events without degradation - critical for solenoid and relay drivers.
Fast body diode recovery trr = 18–27ns and Qrr = 9.2–14nC minimize reverse recovery loss and EMI in freewheeling paths.
Low gate charge Qg = 45nC max allows use of cost-effective gate drivers (e.g., TC4427) without excessive power loss.

Applications

Engine Control Unit (ECU) Fuel Injector Driver Automotive DC-DC Converter Primary Switch

Use Scenario: High-speed switching of 12V fuel injectors with 2–5ms pulse widths and 10A peak current.

IC Role / Device Role / Timing Role: Main power switch controlling injector coil energization and demagnetization via controlled turn-off.

Use Value: Low RDS(on) minimizes I²R heating during long dwell times; 175°C rating ensures reliability across under-hood temperature swings.

Use Scenario: Primary-side switch in 12V-to-5V/3.3V buck converter powering infotainment and ADAS sensors.

IC Role / Device Role / Timing Role: High-frequency (200–500kHz) synchronous rectifier switch with tight duty-cycle control.

Use Value: Fast tr/tf and low Qg reduce switching losses; low Coss (340pF) improves light-load efficiency.

Electric Power Steering (EPS) Motor Phase Leg Automotive HVAC Blower Motor Driver

Use Scenario: Half-bridge phase leg in 24V EPS motor inverter delivering up to 30A RMS current.

IC Role / Device Role / Timing Role: Low-side switch handling high-current freewheeling through integrated body diode.

Use Value: Rated repetitive avalanche withstands motor back-EMF spikes; low VSD (≤1.3V) reduces freewheeling conduction loss.

Use Scenario: PWM-controlled blower motor driver in climate control system with variable speed and stall protection.

IC Role / Device Role / Timing Role: Single-ended switch regulating motor voltage via 1–20kHz PWM.

Use Value: 42A continuous rating handles 25A motor surge; SOA curve supports safe operation during locked-rotor conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL130N4LH5 RDS(on) = 3.3mΩ @ 10V (lower), but VDSS = 40V same; Qg = 52nC (higher); TJ max = 175°C Better conduction efficiency at high current, but higher gate drive demand and no published repetitive avalanche rating Prefer for high-duty-cycle, low-RMS-loss applications where gate drive capability exists and avalanche stress is minimal.
ON Semiconductor NTMFS4C09NT1G RDS(on) = 8.5mΩ @ 10V (slightly lower); VDSS = 40V; Qg = 38nC; TJ max = 150°C (lower) Marginally better RDS(on) and lower Qg, but reduced thermal margin limits use in sustained high-temp environments Acceptable for cabin-mounted modules with ambient <85°C, but not recommended for under-hood ECU replacement.

Compared with STL130N4LH5 and NTMFS4C09NT1G, IRFR3504ZTR offers balanced trade-offs: moderate RDS(on) and Qg, industry-leading 175°C rating, and documented repetitive avalanche capability - making it uniquely suited for safety-critical automotive power switching where thermal and transient robustness are non-negotiable.

Availability

IRFR3504ZTR is available at Aetrix Electronics and suitable for engine control units, automotive DC-DC converters, and electric power steering systems requiring stable component supply across extended product lifecycles.

Supply support for IRFR3504ZTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with core expertise in silicon and wide-bandgap device innovation.

IRFR3504ZTR belongs to the HEXFET® Automotive Power MOSFET product line, engineered specifically for under-hood and safety-critical vehicle subsystems demanding high thermal resilience, avalanche ruggedness, and AEC-Q101 qualification compliance.

FAQ

Is IRFR3504ZTR AEC-Q101 qualified?

Yes, IRFR3504ZTR is AEC-Q101 qualified for automotive applications. This certification covers stress tests including HTGB, HTRB, AC/DC life test, and unclamped inductive switching (UIS) - confirming suitability for engine bay and transmission control environments.

What is the recommended PCB layout for thermal performance?

For optimal RθJC = 1.66°C/W, the exposed drain pad must be soldered to ≥250mm² of 2oz copper on the top layer, connected via ≥6 thermal vias (0.3mm diameter) to inner ground/power planes. Keep gate and source traces short and low-inductance to suppress ringing.

Can IRFR3504ZTR be driven directly from a 3.3V microcontroller?

No - its VGS(th) range (2.0–4.0V) and RDS(on) specification require ≥4.5V gate drive for reliable enhancement. A dedicated gate driver (e.g., TC4427) or level-shifting circuit is mandatory to achieve full 9.0mΩ performance and avoid linear-mode overheating.

Does IRFR3504ZTR include an integrated ESD protection diode?

No - IRFR3504ZTR lacks on-chip ESD protection. External TVS diodes (e.g., SMAJ5.0A) between gate and source are strongly recommended in production designs to prevent gate oxide damage during handling or system-level ESD events.

IRFR3504ZTR Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
9mOhm @ 42A, 10V
Vgs(th) (Max) @ Id:
4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1510 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
90W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRFR3504ZTR FAQ

1.How can I place an order for IRFR3504ZTR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3504ZTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3504ZTR reliable?

The price and inventory of IRFR3504ZTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3504ZTR is usually 5 days.

3.What payment methods are accepted for IRFR3504ZTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3504ZTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3504ZTR?

IRFR3504ZTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3504ZTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3504ZTR?

For technical support, including IRFR3504ZTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3504ZTR requirements.

6.How does Aetrix verify that IRFR3504ZTR is sourced from the original manufacturer or authorized distributors?

All IRFR3504ZTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3504ZTR meets industry standards.

7.What is the process for return or replacement of IRFR3504ZTR?

All IRFR3504ZTR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3504ZTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3504ZTR part is unused and in its original packaging.

Return procedure for IRFR3504ZTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFR3504ZTR Tags

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