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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3504ZTRLPBF

Name: IRFR3504ZTRLPBF
Brand: Infineon Technologies
SKU: IRFR3504ZTRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3504ZTRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3504ZTRLPBF.pdf

Description:: MOSFET N-CH 40V 42A DPAK

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Product details

Overview

IRFR3504ZTRLPBF from Infineon Technologies (formerly International Rectifier) is a 40V, 42A N-channel D-Pak power MOSFET optimized for high-efficiency DC-DC conversion and motor control. It delivers 9.0 mΩ R_DS(on) at V_GS = 10 V, supports 175°C junction operation, and features rated repetitive avalanche capability up to T_jmax. It is commonly used in synchronous buck converters and 24V industrial motor drives.

For engineers reviewing the IRFR3504ZTRLPBF datasheet, IRFR3504ZTRLPBF pinout, IRFR3504ZTRLPBF application, or IRFR3504ZTRLPBF equivalent, key selection criteria include its low conduction loss, fast switching (t_r = 74 ns, t_f = 38 ns), body diode recovery (t_rr = 18–27 ns), thermal robustness, and D-Pak package suitability for PCB-mount thermal management.

Technical Context

This HEXFET® device uses advanced silicon processing to minimize on-resistance per die area while maintaining ruggedness. Its gate charge profile (Q_g = 30–45 nC, Q_gd = 12 nC) enables efficient high-frequency switching in hard-switched topologies.

The integrated body diode exhibits low forward voltage (V_SD ≤ 1.3 V at 42 A) and controlled reverse recovery (Q_rr = 9.2–14 nC), reducing commutation losses in synchronous rectification and H-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage in off-state; suitable for 24V nominal bus systems with transient margin.
R_DS(on)	9.0 mΩ max @ V_GS = 10 V - Enables <1 W conduction loss at 33 A DC, critical for thermally constrained PCB layouts.
I_D	42 A @ T_C = 25°C - Continuous drain current rating defined at case temperature; derates linearly above 25°C.
Q_g	45 nC max - Total gate charge determines driver strength requirement; impacts switching loss and gate drive loop design.
t_r/t_f	74 ns / 38 ns - Fast edge rates reduce transition time losses but increase EMI sensitivity; requires careful layout.
T_J max	175°C - High junction temperature rating allows sustained operation under thermal stress without derating penalties.
E_AS	310 mJ - Single-pulse avalanche energy rating validates robustness against inductive turn-off transients.

Pinout & Package

IRFR3504ZTRLPBF is housed in a surface-mount D-Pak (TO-252AA) package with three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The exposed drain pad provides low thermal resistance (R_θJC = 1.66°C/W) and must be soldered to a large copper pour for thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Exposed metal tab electrically connected to drain; primary thermal path to PCB; must be isolated from other nets.
Source (Pin 1)	Reference node for gate drive and current return	Low-inductance source connection critical for stable gate control; internal LS = 7.5 nH affects switching behavior.
Gate (Pin 2)	Control input for channel conduction	High-impedance MOS gate requiring low-impedance drive; Q_gs = 9.6 nC defines Miller plateau duration.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	9.0 mΩ enables >95% efficiency in 24V/30A buck stages at 500 kHz with minimal heatsinking.
Repetitive avalanche rated	Rated for repeated unclamped inductive switching up to T_jmax, eliminating need for external snubbers in relay/motor drive flyback paths.
Fast body diode	18–27 ns t_rr and 9.2–14 nC Q_rr reduce cross-conduction loss and EMI in synchronous rectifiers.
175°C junction rating	Allows full-rated current delivery in sealed enclosures or high ambient environments without forced air cooling.
Lead-free & RoHS compliant	Meets IPC/JEDEC J-STD-020 reflow profile; compatible with standard Pb-free assembly processes.

Applications

Motor Drive Stage

DC-DC Synchronous Buck

Use Scenario: Half-bridge leg in 24V brushed DC motor controller with PWM frequency ≥20 kHz.

IC Role / Device Role / Timing Role: Low-side switch handling continuous 42A load current and absorbing inductive kickback during PWM off-time.

Use Value: Repetitive avalanche rating eliminates external freewheeling diode and clamp circuitry, reducing BOM count and board space.

Use Scenario: High-current step-down converter supplying 12V/30A to FPGA core rails from 24V input.

IC Role / Device Role / Timing Role: Synchronous rectifier operating in continuous conduction mode at 300–500 kHz switching frequency.

Use Value: Low R_DS(on) and fast body diode minimize conduction and recovery losses, improving full-load efficiency by ~1.2% vs. comparable 12mΩ parts.

Power OR'ing Circuit

Hot-Swap Controller FET

Use Scenario: Redundant 48V power supply combiner in telecom shelf with automatic fault isolation.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET acting as ideal diode with bidirectional current handling.

Use Value: 1.3V body diode forward drop and low R_DS(on) reduce forward voltage drop by >0.8V vs. Schottky diodes, cutting heat generation by >25W at 30A.

Use Scenario: Inrush current limiter in 24V server board hot-swap module with 50 ms soft-start.

IC Role / Device Role / Timing Role: Main pass element controlling ramp-up of downstream capacitance using gate-controlled linear-mode operation.

Use Value: 175°C T_j rating and SOA curve support safe linear-mode operation during 500 ms inrush events without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3504PbF	Same die, but in smaller I-Pak (TO-220AB) package; R_θJA = 77°C/W vs. 40°C/W for D-Pak.	Higher thermal resistance limits continuous current in compact PCB designs; better suited for heatsink-mounted use.	Select when mechanical mounting to heatsink is preferred over PCB thermal relief.
STP40NF10L	100V rating, higher R_DS(on) (11.5 mΩ), lower Q_g (34 nC); no specified repetitive avalanche rating.	Lacks avalanche ruggedness; unsuitable for inductive switching without clamping; wider voltage margin useful in 48V systems.	Choose only if 100V blocking is required and avalanche stress is absent or externally managed.

Compared with IRLR3504PbF and STP40NF10L, IRFR3504ZTRLPBF offers superior thermal performance in surface-mount applications, guaranteed repetitive avalanche capability for motor drive reliability, and lowest R_DS(on) in its voltage class-making it optimal for space-constrained, high-current, inductive-load switching.

Availability

IRFR3504ZTRLPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and hot-swap controllers requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for IRFR3504ZTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap power devices.

The HEXFET® Power MOSFET product line was developed to deliver ultra-low on-resistance and rugged switching performance for high-efficiency power conversion in industrial motor drives, telecom power supplies, and battery-powered equipment.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR3504ZTRLPBF supports 42 A continuous drain current at T_C = 25°C, derating linearly to 25 A at T_C = 100°C per the Absolute Maximum Ratings table. This reflects package thermal limits-not silicon capability-and assumes adequate PCB copper area for heat spreading.

Does this MOSFET require a gate resistor for stability?

Yes-a series gate resistor (typically 5–15 Ω) is recommended to dampen ringing caused by gate loop inductance interacting with Q_gd and C_iss. The device's 12 nC Miller charge and 1510 pF input capacitance make it susceptible to oscillation without proper gate drive impedance control.

Can IRFR3504ZTRLPBF be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (confirmed by Fig. 10) ensures inherent current sharing when paralleled. However, matched layout symmetry (gate drive, source inductance, thermal coupling) is essential to avoid imbalance; typical designs use ≤3 devices in parallel for >100 A applications.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes-the body diode has characterized reverse recovery parameters: t_rr = 18–27 ns and Q_rr = 9.2–14 nC at I_F = 42 A. These values are sufficiently low for synchronous rectification up to 500 kHz, provided gate timing avoids shoot-through and layout minimizes source inductance (LS = 7.5 nH).

IRFR3504ZTRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 42A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1510 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3504ZTRLPBF FAQ

1.How can I place an order for IRFR3504ZTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3504ZTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3504ZTRLPBF reliable?

The price and inventory of IRFR3504ZTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3504ZTRLPBF is usually 5 days.

3.What payment methods are accepted for IRFR3504ZTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3504ZTRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3504ZTRLPBF?

IRFR3504ZTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3504ZTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3504ZTRLPBF?

For technical support, including IRFR3504ZTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3504ZTRLPBF requirements.

6.How does Aetrix verify that IRFR3504ZTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3504ZTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3504ZTRLPBF meets industry standards.

7.What is the process for return or replacement of IRFR3504ZTRLPBF?

All IRFR3504ZTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3504ZTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3504ZTRLPBF part is unused and in its original packaging.

Return procedure for IRFR3504ZTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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