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Infineon Technologies IRFR3504ZTRPBF

Part No.:
IRFR3504ZTRPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR3504ZTRPBF.pdf
Description:
MOSFET N-CH 40V 42A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,071

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Product details

Overview

IRFR3504ZTRPBF from Infineon Technologies (formerly International Rectifier) is a 40V, 42A N-channel D-Pak power MOSFET with 9.0mΩ RDS(on) at VGS = 10V, 175°C junction rating, and rated repetitive avalanche capability. It serves as a high-efficiency main or synchronous rectifier switch in DC-DC converters, motor drives, and power supplies.

For engineers reviewing the IRFR3504ZTRPBF datasheet, IRFR3504ZTRPBF pinout, IRFR3504ZTRPBF application, or IRFR3504ZTRPBF equivalent, key selection criteria include its low conduction loss, fast switching (tr = 74ns, tf = 38ns), body diode recovery (trr = 18–27ns), thermal robustness (RθJC = 1.66°C/W), and D-Pak package compatibility with high-current PCB layouts.

Technical Context

This HEXFET® device uses advanced silicon processing to minimize on-resistance per die area while maintaining rugged unclamped inductive switching performance. Its gate charge profile (Qg = 30–45nC, Qgd = 12nC) supports efficient hard-switching in buck and half-bridge topologies up to several hundred kHz.

The integrated body diode exhibits low forward voltage (VSD ≤ 1.3V at 42A) and controlled reverse recovery (Qrr = 9.2–14nC), enabling reliable operation in synchronous rectification without external Schottky supplementation in many 12V–24V systems.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS40V - Maximum blocking voltage for 12V/24V bus applications with margin against transients
RDS(on)9.0mΩ max @ VGS = 10V - Enables ≤1.6W conduction loss at 42A continuous drain current
ID42A @ TC = 25°C - Sustains high pulsed load currents in motor gate drivers and SMPS primary switches
tr/tf74ns/38ns - Supports fast switching with reduced overlap loss in high-frequency converters
EAS310mJ (tested) - Withstands single-pulse inductive energy without failure under defined test conditions
RθJC1.66°C/W - Allows direct heatsinking to chassis or copper pour for thermal management
VGS(th)2.0–4.0V - Compatible with standard 3.3V/5V logic-level gate drivers when used with sufficient drive strength

Pinout & Package

IRFR3504ZTRPBF is housed in a surface-mount D-Pak (TO-252AA) package with three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The exposed drain pad provides low-inductance, high-current path and thermal interface to PCB copper.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current-carrying terminal, electrically connected to package backsideProvides low-inductance, high-current path and primary thermal conduction path to PCB heatsink area
Source (Pin 1)Reference node for gate drive and current return pathConnects directly to power ground plane; critical for minimizing source inductance (LS = 7.5nH)
Gate (Pin 2)Control input for channel conductionRequires <15Ω series resistance to damp ringing; total gate charge Qg = 30–45nC defines driver sizing

Key Features

FeatureDesign Value
Ultra-low RDS(on)9.0mΩ enables <1.6W conduction loss at full 42A, reducing thermal stress in compact power stages
175°C maximum junction temperatureSupports operation in sealed enclosures or high-ambient environments without derating below 100°C case temp
Repetitive avalanche ratedValidated for repeated unclamped inductive switching up to Tjmax, eliminating need for external snubbers in many motor control designs
Fast body diode recoverytrr = 18–27ns and Qrr = 9.2–14nC reduce switching loss and EMI in synchronous rectifier configurations
Lead-free and RoHS-compliantMeets IPC-J-STD-020 moisture sensitivity level 1 (MSL1), suitable for standard reflow assembly without baking

Applications

DC-DC Buck ConverterBrushed DC Motor Driver

Use Scenario: High-efficiency 12V-to-5V/3.3V point-of-load converter in industrial PLC modules.

IC Role / Device Role / Timing Role: Main synchronous rectifier switch operating at 300kHz with gate drive referenced to output rail.

Use Value: Low RDS(on) and fast body diode recovery reduce conduction and switching losses, achieving >94% efficiency at 20A load.

Use Scenario: H-bridge driver for 24V brushed motors in automated gate actuators.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current up to 42A peak during stall conditions.

Use Value: Repetitive avalanche rating eliminates external flyback diodes, simplifying layout and improving reliability under dynamic braking.

Automotive LED Headlamp DriverServer PSU OR-ing FET

Use Scenario: Constant-current switch-mode driver for high-brightness LED arrays in automotive front lighting.

IC Role / Device Role / Timing Role: PWM-controlled high-side switch modulating LED current at 1–5kHz with precise duty-cycle control.

Use Value: 175°C rating ensures stable operation inside thermally constrained headlamp housings; low gate charge enables clean edge control.

Use Scenario: Hot-swap OR-ing FET in redundant 12V server power distribution units.

IC Role / Device Role / Timing Role: Reverse-polarity protected, low-loss pass element controlling power path between two independent PSUs.

Use Value: Ultra-low RDS(on) minimizes voltage drop (<500mV at 30A), preserving system efficiency and reducing heat sink requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP40NF10100V VDSS, 40A ID, 28mΩ RDS(on), TO-220 packageHigher voltage rating but higher on-resistance and larger footprint; unsuitable for space-constrained D-Pak layoutsSelect only if 100V blocking is required and thermal budget allows higher conduction loss
IRL3803PbF30V VDSS, 68A ID, 8.0mΩ RDS(on), D-Pak, logic-level (VGS(th) = 1.0–2.0V)Lower voltage rating limits use to ≤15V systems; lower threshold enables direct 3.3V MCU drive without level shiftPrefer for 3.3V-control applications where 30V blocking suffices and gate drive simplicity is prioritized

Compared with STP40NF10 and IRL3803PbF, IRFR3504ZTRPBF offers optimal balance of 40V rating, ultra-low on-resistance, D-Pak form factor, and proven avalanche ruggedness-making it preferred for 12V–24V industrial and automotive power stages requiring both efficiency and reliability.

Availability

IRFR3504ZTRPBF is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, LED lamp controllers, and OR-ing circuits requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFR3504ZTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-current, high-reliability switching in industrial power conversion, motor control, and automotive subsystems.

FAQ

Is IRFR3504ZTRPBF suitable for logic-level gate drive?

No-it is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0V to 4.0V, and it requires ≥10V VGS to achieve rated RDS(on). Driving it from 3.3V or 5V microcontrollers without a gate driver will result in excessive conduction loss and thermal instability.

What is the maximum continuous drain current at 100°C case temperature?

At TC = 100°C, the continuous drain current is 25A (derated from 42A at 25°C), as specified in the Absolute Maximum Ratings table. This reflects thermal limitation of the D-Pak package, not silicon current capability.

Does IRFR3504ZTRPBF have an integrated ESD protection diode on the gate?

No-this device lacks built-in gate ESD protection. External Zener clamping (e.g., 12V TVS between gate and source) is recommended in systems exposed to handling or board-level ESD events to prevent gate oxide damage.

Can IRFR3504ZTRPBF be paralleled with identical units for higher current capacity?

Yes-its positive temperature coefficient of RDS(on) (see Fig. 10) ensures inherent current sharing. However, matched gate drive layout (equal trace length/impedance) and thermal coupling (shared heatsink) are essential to avoid imbalance and localized overheating.

IRFR3504ZTRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Last Time Buy
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
9mOhm @ 42A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1510 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
90W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRFR3504ZTRPBF FAQ

1.How can I place an order for IRFR3504ZTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3504ZTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3504ZTRPBF reliable?

The price and inventory of IRFR3504ZTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3504ZTRPBF is usually 5 days.

3.What payment methods are accepted for IRFR3504ZTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3504ZTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3504ZTRPBF?

IRFR3504ZTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3504ZTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3504ZTRPBF?

For technical support, including IRFR3504ZTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3504ZTRPBF requirements.

6.How does Aetrix verify that IRFR3504ZTRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3504ZTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3504ZTRPBF meets industry standards.

7.What is the process for return or replacement of IRFR3504ZTRPBF?

All IRFR3504ZTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3504ZTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3504ZTRPBF part is unused and in its original packaging.

Return procedure for IRFR3504ZTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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