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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3504ZTRRPBF

Name: IRFR3504ZTRRPBF
Brand: Infineon Technologies
SKU: IRFR3504ZTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3504ZTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3504ZTRRPBF.pdf

Description:: MOSFET N-CH 40V 42A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR3504ZTRRPBF from Infineon Technologies (formerly International Rectifier) is a 40V N-channel D-Pak power MOSFET with 9.0 mΩ R_DS(on) at V_GS = 10 V, 42 A continuous drain current at T_C = 25°C, 175°C maximum junction temperature, and rated for repetitive avalanche operation. It serves as a high-efficiency synchronous rectifier or primary-side switch in DC-DC converters, motor drive half-bridges, and industrial power supplies.

For engineers reviewing the IRFR3504ZTRRPBF datasheet, IRFR3504ZTRRPBF pinout, IRFR3504ZTRRPBF application, or IRFR3504ZTRRPBF equivalent, key selection criteria include its low conduction loss, fast switching (t_d(on) = 15 ns, t_f = 38 ns), body diode recovery (t_rr = 18–27 ns), thermal robustness (R_θJC = 1.66°C/W), and D-Pak package compatibility with high-power PCB layouts.

Technical Context

This HEXFET® device uses advanced silicon processing to minimize on-resistance per unit area while maintaining rugged unclamped inductive switching capability. Its gate charge profile (Q_g = 30–45 nC, Q_gd = 12 nC) supports efficient high-frequency PWM control in hard-switched topologies up to several hundred kHz.

The integrated body diode exhibits V_SD = 1.3 V at 42 A and reverse recovery charge Q_rr = 9.2–14 nC, enabling reliable operation in freewheeling and synchronous rectification roles without external diode supplementation. Thermal design is anchored by a validated 1.66°C/W junction-to-case resistance and 175°C absolute maximum operating temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage before avalanche; defines use in ≤36 V nominal bus systems (e.g., 24 V industrial, 12 V automotive).
R_DS(on)	9.0 mΩ max @ V_GS = 10 V - Enables <1.6 W conduction loss at 42 A, critical for thermally constrained PCB-mount applications.
I_D (cont)	42 A @ T_C = 25°C - Sustained current rating under heatsink-cooled conditions; derates to ~25 A at T_C = 100°C.
Q_g	45 nC max - Determines gate driver power requirement and switching loss; compatible with standard 1-A peak drivers at ≤500 kHz.
t_rr	27 ns max - Limits diode reverse recovery stress during hard commutation; reduces EMI and cross-conduction risk in bridge circuits.
R_θJC	1.66°C/W - Enables direct thermal interface to heatsink; allows >50 W dissipation before reaching 175°C junction limit at 25°C case temp.
E_AS	310 mJ - Single-pulse avalanche energy rating; supports robustness against inductive load transients without snubber networks.

Pinout & Package

IRFR3504ZTRRPBF is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection. The package features gull-wing leads compatible with standard reflow soldering and provides low-inductance source/drain paths (L_S = 7.5 nH, L_D = 4.5 nH).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current return path / heat sink interface	Electrically and thermally connected to large copper tab; must be soldered to ≥1 cm² PCB copper pour or external heatsink.
Source	Reference node for gate drive and current sensing	Low-inductance terminal; used for Kelvin source connections in precision current monitoring or gate drive referencing.
Gate	Control electrode for channel modulation	High-impedance input requiring <45 nC charge; sensitive to ESD-requires series gate resistor (≥10 Ω) and TVS protection in noisy environments.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	9.0 mΩ enables <1.6 W conduction loss at full 42 A, reducing thermal footprint in space-constrained power stages.
175°C junction rating	Supports operation in sealed enclosures or high-ambient environments (e.g., motor drives, solar inverters) without derating penalties.
Repetitive avalanche capability	Rated for repeated unclamped inductive switching up to T_jmax, eliminating need for external clamping in relay or solenoid drive circuits.
Fast body diode recovery	t_rr = 18–27 ns and Q_rr = 9.2–14 nC reduce switching losses and voltage overshoot during freewheeling in synchronous buck converters.
Lead-free construction	RoHS-compliant finish and packaging meet IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life.

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Rectifier

Use Scenario: High-current H-bridge for 24 V BLDC motor control in automated guided vehicles and industrial actuators.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional 42 A phase current with fast turn-off to minimize shoot-through risk.

Use Value: 9.0 mΩ R_DS(on) and 38 ns fall time reduce conduction + switching losses below 2.1 W per switch, enabling air-cooled designs.

Use Scenario: Secondary-side synchronous rectification in isolated 48 V–12 V telecom DC-DC modules.

IC Role / Device Role / Timing Role: Active replacement of Schottky diode in forward converter output stage, driven by transformer-coupled gate signal.

Use Value: Body diode V_SD = 1.3 V and Q_rr = 9.2 nC enable >95% efficiency at 40 A output with minimal reverse recovery loss.

Industrial Power Supply Switch

Automotive Load Switch

Use Scenario: Primary-side switch in 300 W industrial AC-DC PFC + LLC combo supply with 24 V auxiliary rail.

IC Role / Device Role / Timing Role: Fast-switching, avalanche-rated MOSFET in LLC resonant half-bridge operating at 200–500 kHz.

Use Value: 45 nC Q_g and 1.66°C/W R_θJC allow stable operation at 125°C case temperature with <10 K junction-to-case rise.

Use Scenario: High-side load switch for 12 V battery-fed infotainment subsystems with reverse polarity and load dump protection.

IC Role / Device Role / Timing Role: Protected power distribution switch with integrated avalanche energy absorption during ISO 7637-2 pulse 5a transients.

Use Value: 310 mJ E_AS withstands 100 V/50 ms load dump events without failure when mounted on ≥2 oz copper.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3504PbF	Same die, TO-220AB package; R_θJA = 62°C/W (vs. 40°C/W for D-Pak); no exposed drain tab.	Better suited for bolt-down heatsink mounting; unsuitable for compact surface-mount layouts.	Select when mechanical mounting requires through-hole or higher standalone power dissipation (>3 W) with forced airflow.
STP40NF10L	100 V V_DSS, 11 mΩ R_DS(on), 40 A I_D; higher voltage margin but 22% higher conduction loss at 42 A.	Used where 40 V margin is insufficient (e.g., 48 V systems with ripple); lower avalanche rating (E_AS = 190 mJ).	Select only if system overvoltage exceeds 40 V rating; avoid in 24 V applications where IRFR3504ZTRRPBF's lower R_DS(on) improves efficiency.

Compared with IRLR3504PbF and STP40NF10L, IRFR3504ZTRRPBF delivers optimal balance of low-loss D-Pak packaging, 175°C thermal headroom, and verified repetitive avalanche performance-making it preferred for high-density, convection-cooled industrial and automotive power stages.

Availability

IRFR3504ZTRRPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC synchronous rectifiers, and industrial power supply switches requiring stable component supply, RoHS compliance, and long-term lifecycle support.

Supply support for IRFR3504ZTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with heritage from International Rectifier's HEXFET® power MOSFET innovation.

This part belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial motor control, power conversion, and automotive electrification systems.

FAQ

What is the maximum safe operating frequency for IRFR3504ZTRRPBF in a hard-switched buck converter?

At 42 A and 20 V V_DS, switching losses scale with f × (t_d(on) + t_r + t_d(off) + t_f) × V × I. With total switching time ~100 ns and Q_g = 45 nC, practical hard-switching is limited to ≤300 kHz for <1.5 W total switching loss. Above this, synchronous ZVS or resonant topologies are recommended.

Does IRFR3504ZTRRPBF require a gate driver IC, or can it be driven directly from a microcontroller GPIO?

A typical 3.3 V or 5 V microcontroller GPIO cannot fully enhance the gate: V_GS(th) is 2.0–4.0 V, but R_DS(on) is only guaranteed at V_GS = 10 V. Driving directly risks partial turn-on and thermal runaway. A dedicated gate driver (e.g., TC4427) delivering ≥10 V and ≥1 A peak current is required for reliable, low-loss operation.

How does the body diode performance compare to an external Schottky diode in synchronous rectification?

The integrated body diode has V_SD = 1.3 V and Q_rr = 9.2–14 nC-higher forward drop than a 0.5 V Schottky but eliminates layout parasitics and cost of discrete diodes. In 12–24 V outputs, its conduction loss is offset by elimination of diode package inductance and simplified gate timing, especially at >200 kHz.

Is IRFR3504ZTRRPBF suitable for linear-mode (constant-current) operation, such as LED constant-current sinks?

No. While rated for 175°C junction temperature, its Safe Operating Area (SOA) limits linear operation to <10 V × 10 A (100 W) at DC-far below its 42 A rating. Linear use demands SOA-limited parts (e.g., IXTPxxN10T) with guaranteed DC SOA curves; this device is optimized for switching, not analog regulation.

IRFR3504ZTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 42A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1510 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3504ZTRRPBF FAQ

1.How can I place an order for IRFR3504ZTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3504ZTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3504ZTRRPBF reliable?

The price and inventory of IRFR3504ZTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3504ZTRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR3504ZTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3504ZTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3504ZTRRPBF?

IRFR3504ZTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3504ZTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3504ZTRRPBF?

For technical support, including IRFR3504ZTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3504ZTRRPBF requirements.

6.How does Aetrix verify that IRFR3504ZTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3504ZTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3504ZTRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR3504ZTRRPBF?

All IRFR3504ZTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3504ZTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3504ZTRRPBF part is unused and in its original packaging.

Return procedure for IRFR3504ZTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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