Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3518PBF

Name: IRFR3518PBF
Brand: Infineon Technologies
SKU: IRFR3518PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFR3518PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3518PBF.pdf

Description:: MOSFET N-CH 80V 38A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,094

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFR3518PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET Power MOSFET in D-Pak package, rated for 80 V V_DS, 29 mΩ R_DS(on) at V_GS = 10 V and I_D = 18 A, with 150 A pulsed drain current capability. It is optimized for high-frequency DC-DC converters where low gate charge (Q_g = 37–56 nC) and fast switching (t_r = 25 ns, t_f = 13 ns) reduce conduction and switching losses.

For engineers reviewing the IRFR3518PBF datasheet, IRFR3518PBF pinout, IRFR3518PBF application, or IRFR3518PBF equivalent, key selection considerations include its 80 V breakdown voltage, 24–29 mΩ on-resistance at 10 V gate drive, 37–56 nC total gate charge, 1710 pF input capacitance, and body diode recovery characteristics (t_rr = 77 ns, Q_rr = 210 nC) critical for synchronous rectification and hard-switched topologies.

Technical Context

This MOSFET employs a planar silicon process with optimized cell geometry to achieve low R_DS(on) × Q_g figure-of-merit (FoM), enabling high-efficiency operation in 100–500 kHz DC-DC stages. Its fully characterized C_oss (270–1780 pF across 1–64 V) and C_rss (33 pF) support accurate snubber and resonant circuit design.

The device features a robust intrinsic body diode with V_SD = 1.3 V at I_S = 18 A and specified avalanche energy rating (E_AS = 160 mJ single-pulse), allowing reliable unclamped inductive switching in flyback and LLC configurations without external protection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage in buck, boost, or half-bridge primary-side switches
R_DS(on)	24–29 mΩ @ V_GS = 10 V, I_D = 18 A - Enables ≤0.5 W conduction loss at 20 A continuous current
Q_g	37–56 nC - Determines gate driver power requirement and switching transition time
t_r/t_f	25 ns / 13 ns @ V_DD = 40 V, I_D = 18 A - Supports >1 MHz switching with controlled EMI in compact converters
C_iss	1710 pF @ V_GS = 0 V - Sets high-frequency input impedance and gate drive loop stability margin
E_AS	160 mJ - Specifies maximum single-pulse inductive energy absorption without failure
t_rr/Q_rr	77 ns / 210 nC @ T_J = 25°C - Critical for ZVS/ZCS timing and reverse recovery loss in synchronous rectifiers

Pinout & Package

IRFR3518PBF uses the industry-standard D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal performance. Thermal resistance is R_θJC = 1.4 °C/W and R_θJA = 40 °C/W (PCB mount).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel MOSFET	Common return path for load current; connects to ground or low-side reference in half-bridge
Pin 2 (Gate)	Control electrode	Receives PWM signal; requires <12 V drive for full enhancement; sensitive to ESD
Pin 3 (Drain)	High-side current output node	Connected to input bus or transformer primary; ties to large copper pour for heat dissipation

Key Features

Feature	Design Value
Low gate-to-drain charge (Q_gd)	12 nC - Reduces Miller effect, enabling stable high-dV/dt switching (>5.2 V/ns)
Fully characterized C_oss and C_rss	C_oss = 270–1780 pF, C_rss = 33 pF - Allows precise soft-switching design and snubber optimization
Specified avalanche capability	E_AS = 160 mJ, I_AR = 18 A - Permits rugged operation in inductive load circuits without external clamping
Lead-free construction	RoHS-compliant Pb-free plating - Meets environmental compliance requirements for industrial and telecom equipment

Applications

Server VRMs

Industrial DC-DC Modules

Use Scenario: Point-of-load (POL) regulation in 48 V–12 V intermediate bus conversion for CPU/GPU power delivery.

IC Role / Device Role / Timing Role: Synchronous high-side switch in multiphase buck converter operating at 300–600 kHz.

Use Value: Low R_DS(on) and Q_g minimize conduction + switching losses, improving efficiency above 92% at full load.

Use Scenario: Isolated 24 V input to 5 V/3.3 V output in programmable logic controller (PLC) power supplies.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or asymmetrical half-bridge topology.

Use Value: Rated 80 V V_DS provides 2× safety margin over 24 V nominal input with surge tolerance up to 40 V transients.

Telecom Rectifiers

Motor Drive Half-Bridges

Use Scenario: Secondary-side synchronous rectification in 48 V telecom rectifier modules delivering 50–100 A output.

IC Role / Device Role / Timing Role: Low-side switch leveraging body diode conduction during dead-time and MOSFET conduction during active period.

Use Value: Verified t_rr = 77 ns and Q_rr = 210 nC enable predictable zero-voltage switching transitions and reduce reverse recovery loss.

Use Scenario: Half-bridge leg in 24–48 V BLDC motor drives for HVAC blowers and industrial fans.

IC Role / Device Role / Timing Role: High-current switching element handling 30 A peak phase current with 150 A pulsed capability.

Use Value: 110 W power dissipation (T_C = 25°C) and 1.4 °C/W junction-to-case thermal resistance support continuous 27 A operation with minimal heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	80 V V_DS, 8 mΩ R_DS(on), TO-220 package, higher Q_g (120 nC)	Higher conduction efficiency but slower switching; unsuitable for >200 kHz designs	Prefer when thermal mass allows TO-220 mounting and lower R_DS(on) outweighs gate drive complexity
IXTP30N10D2	100 V V_DS, 30 mΩ R_DS(on), TO-220AB, enhanced avalanche rating (E_AS = 250 mJ)	Higher voltage margin but higher on-resistance and larger footprint	Choose when system-level surge immunity exceeds 80 V or board space permits through-hole mounting

Compared with STP80NF55-08 and IXTP30N10D2, IRFR3518PBF offers optimal balance of switching speed, thermal performance in surface-mount form factor, and proven reliability in high-frequency DC-DC converters-making it preferred for space-constrained, high-efficiency POL and telecom applications.

Availability

IRFR3518PBF is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC modules, and telecom rectifiers requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IRFR3518PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support its legacy HEXFET product lines with full documentation and quality assurance.

The IRFR3518PBF belongs to the HEXFET Power MOSFET family, designed specifically for high-efficiency, high-frequency switching power supplies including DC-DC converters, motor drives, and industrial SMPS.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR3518PBF supports 27 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating from the 38 A rating at 25°C reflects thermal limitations of the D-Pak package and PCB layout-dependent heat transfer.

Does IRFR3518PBF have avalanche-rated operation?

Yes-IRFR3518PBF is fully specified for unclamped inductive switching with E_AS = 160 mJ (single-pulse) and I_AR = 18 A. These values are measured per JEDEC standard JESD24-1 and validated across production lots, enabling use in flyback and resonant converters without external avalanche clamps.

Can IRFR3518PBF be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (0.09 V/°C) ensures inherent current sharing when paralleled. Designers must match gate drive impedance and layout symmetry; typical practice uses individual 10 Ω gate resistors and Kelvin source connections to maintain balance under dynamic load conditions.

What is the recommended gate resistor value for 300 kHz switching?

A 5.6–9.1 Ω gate resistor is recommended for 300 kHz operation with IRFR3518PBF, balancing switching speed (t_r/t_f ≈ 25/13 ns) against gate driver stress and EMI. Lower values increase dV/dt and risk shoot-through; higher values raise switching losses-optimal value depends on driver output impedance and PCB trace inductance.

IRFR3518PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 29mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1710 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3518PBF FAQ

1.How can I place an order for IRFR3518PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3518PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3518PBF reliable?

The price and inventory of IRFR3518PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3518PBF is usually 5 days.

3.What payment methods are accepted for IRFR3518PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3518PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3518PBF?

IRFR3518PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3518PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3518PBF?

For technical support, including IRFR3518PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3518PBF requirements.

6.How does Aetrix verify that IRFR3518PBF is sourced from the original manufacturer or authorized distributors?

All IRFR3518PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3518PBF meets industry standards.

7.What is the process for return or replacement of IRFR3518PBF?

All IRFR3518PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3518PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3518PBF part is unused and in its original packaging.

Return procedure for IRFR3518PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…