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Infineon Technologies IRFR3518TRPBF
- Part No.:
- IRFR3518TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR3518TRPBF.pdf
- Description:
- MOSFET N-CH 80V 38A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,543
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Product details
Overview
IRFR3518TRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, rated for 80 V VDS, 29 mΩ RDS(on) at VGS = 10 V and ID = 18 A, with 150 A pulsed drain current capability. It is optimized for high-frequency DC-DC converters requiring low gate charge and fast switching.
For engineers reviewing the IRFR3518TRPBF datasheet, IRFR3518TRPBF pinout, IRFR3518TRPBF application, or IRFR3518TRPBF equivalent, key selection criteria include its 37 nC total gate charge, 330 pF effective output capacitance (Coss,eff), avalanche-rated 160 mJ single-pulse energy, and thermal resistance of 1.4 °C/W junction-to-case - all critical for synchronous buck converter and motor drive half-bridge designs.
Technical Context
This MOSFET employs a planar silicon process with optimized cell geometry to achieve low RDS(on) × Qg figure-of-merit (≈1.07 Ω·nC). Its gate threshold voltage (2.0–4.0 V) enables robust 5 V or 3.3 V logic-level drive compatibility when used with appropriate gate drivers.
The device integrates a fast, low-Qrr body diode (210 nC reverse recovery charge, 77 ns trr) and is fully characterized for unclamped inductive switching (UIS), supporting reliable operation in hard-switched topologies without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Maximum blocking voltage in high-side switch or freewheeling path of 48 V input systems |
| RDS(on) max | 29 mΩ @ VGS = 10 V, ID = 18 A - Enables <1.1 W conduction loss at 20 A continuous in PCB-mount thermal design |
| Qg typ | 37 nC - Reduces gate driver power demand and switching transition time in 100–500 kHz converters |
| Coss,eff | 330 pF - Low effective output capacitance minimizes turn-off energy loss during hard switching |
| EAS | 160 mJ - Supports robust operation under transient overcurrent or inductive load dump conditions |
| RθJC | 1.4 °C/W - Enables direct heatsinking via PCB copper pour or clip-on heatsink for >60 W dissipation |
| tr/tf | 25 ns / 13 ns - Fast edge rates reduce overlap loss in synchronous rectification applications |
Pinout & Package
IRFR3518TRPBF is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection. The package supports high-current PCB routing and efficient thermal transfer to inner copper layers.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connects to low-side return path and power ground plane |
| Pin 2 (Gate) | Control terminal (G) | High-impedance input requiring <37 nC charge for full enhancement; sensitive to ESD |
| Pin 3 (Drain) | Power output terminal (D) | Exposed metal pad on bottom surface - electrically and thermally tied to drain; must be soldered to large copper area |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg/RDS(on) ratio | 1.28 nC/mΩ - improves efficiency in high-frequency switching by reducing combined conduction + switching loss |
| Fully characterized Coss vs. VDS | 170–1780 pF range (VDS = 64 V to 1 V) - enables accurate soft-switching timing and resonant circuit modeling |
| Avalanche-rated | 160 mJ single-pulse EAS - eliminates need for external clamping in inductive load switching |
| Lead-free construction | RoHS-compliant, Pb-free plating and die attach - meets industrial and automotive environmental requirements |
| Body diode trr & Qrr | 77 ns / 210 nC - reduces shoot-through risk and commutation loss in synchronous rectifiers |
Applications
| Server VRM Power Stage | Industrial DC-DC Converter |
|---|---|
Use Scenario: High-density 12 V input → 1.2 V/100 A output VRM for Xeon or EPYC processors. IC Role / Device Role / Timing Role: Synchronous rectifier (low-side switch) in multiphase buck converter with 300–600 kHz switching frequency. Use Value: 29 mΩ RDS(on) and 37 nC Qg minimize conduction loss and gate drive loss, enabling >92% efficiency at full load. | Use Scenario: 48 V to 12 V isolated DC-DC module for PLC backplane power. IC Role / Device Role / Timing Role: Primary-side active clamp switch in active-clamp forward topology operating at 250 kHz. Use Value: 80 V rating and 160 mJ EAS withstand clamp voltage overshoot during leakage inductance reset without failure. |
| Brushless DC Motor Inverter | Telecom PoE++ Switch |
Use Scenario: 24 V three-phase inverter driving 500 W BLDC fan in HVAC control unit. IC Role / Device Role / Timing Role: Half-bridge low-side switch with 100 ns dead-time control and PWM up to 20 kHz. Use Value: Fast 13 ns fall time and low 330 pF Coss,eff ensure clean switching edges and minimal shoot-through margin requirement. | Use Scenario: 57 V PoE++ (IEEE 802.3bt Type 4) power sourcing equipment (PSE) switch controller. IC Role / Device Role / Timing Role: Hot-swap MOSFET in 4-pair power delivery path with inrush current limiting and fault protection. Use Value: 150 A pulsed drain current and 2.0–4.0 V VGS(th) enable precise current limiting using simple op-amp feedback without level-shifting. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR3518PbF | Same die, but in smaller I-Pak (TO-220AB) package; RθJA = 40 °C/W vs. 110 °C/W for IRFR3518TRPBF | Requires through-hole mounting and external heatsink; unsuitable for ultra-thin or double-sided SMT layouts | Select when board space allows through-hole assembly and higher ambient temperature derating is acceptable |
| STP80NF55-08 | 80 V, 30 mΩ, but higher Qg (70 nC) and no published Coss,eff or EAS data | Lacks documented avalanche ruggedness and dynamic capacitance characterization - requires additional layout margin | Select only if cost sensitivity outweighs need for verified UIS performance and fast switching optimization |
Compared with IRLR3518PbF and STP80NF55-08, IRFR3518TRPBF delivers superior thermal performance in SMT form factor, verified avalanche energy rating, and fully characterized dynamic capacitances - making it preferred for compact, high-reliability DC-DC and motor control designs where gate drive efficiency and layout predictability are critical.
Availability
IRFR3518TRPBF is available at Aetrix Electronics and suitable for server VRM power stages, industrial DC-DC converters, BLDC motor inverters, and PoE++ PSE switches requiring stable component supply across multi-year production cycles.
Supply support for IRFR3518TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The HEXFET Power MOSFET product line - including IRFR3518TRPBF - was originally developed by International Rectifier and continues under Infineon to deliver high-efficiency, high-reliability discrete power switches for switching power supplies and motor drives.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRFR3518TRPBF supports 27 A continuous drain current at TC = 100°C with VGS = 10 V, as specified in the Absolute Maximum Ratings table. This value assumes adequate PCB copper area for thermal conduction and accounts for RDS(on) increase with junction temperature.
Is IRFR3518TRPBF suitable for 5 V gate drive?
Yes - its gate threshold voltage range (2.0–4.0 V) and guaranteed RDS(on) of ≤29 mΩ at VGS = 10 V allow functional operation with 5 V logic-level drive, though RDS(on) will be higher (~45–55 mΩ) and conduction loss increases accordingly.
Does this MOSFET have avalanche capability, and is it tested per JEDEC standards?
Yes - IRFR3518TRPBF is fully characterized for unclamped inductive switching (UIS) with 160 mJ single-pulse avalanche energy at TJ = 25°C. Test method follows JEDEC JESD24-11, and data is provided in the Avalanche Characteristics section of the datasheet.
What is the recommended PCB layout for thermal performance?
For optimal thermal performance, connect the exposed drain pad to ≥4 cm² of 2 oz copper on the top layer, with ≥6 thermal vias (0.3 mm diameter) to inner ground/power planes. Keep gate traces short and shielded from drain noise to prevent false turn-on.
IRFR3518TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 29mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 56 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1710 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR3518TRPBF FAQ
1.How can I place an order for IRFR3518TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR3518TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR3518TRPBF reliable?
The price and inventory of IRFR3518TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3518TRPBF is usually 5 days.
3.What payment methods are accepted for IRFR3518TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3518TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR3518TRPBF?
IRFR3518TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR3518TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR3518TRPBF?
For technical support, including IRFR3518TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3518TRPBF requirements.
6.How does Aetrix verify that IRFR3518TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFR3518TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3518TRPBF meets industry standards.
7.What is the process for return or replacement of IRFR3518TRPBF?
All IRFR3518TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3518TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR3518TRPBF part is unused and in its original packaging.
Return procedure for IRFR3518TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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