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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3607PBF

Name: IRFR3607PBF
Brand: Infineon Technologies
SKU: IRFR3607PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3607PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3607PBF.pdf

Description:: MOSFET N-CH 75V 56A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR3607PBF from Infineon Technologies (formerly International Rectifier) is a 75V, 56A (package-limited), N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, optimized for high-frequency hard-switched SMPS and synchronous rectification. It features 7.34 mΩ typical R_DS(on), 56 nC total gate charge, and enhanced avalanche ruggedness with 310 mJ single-pulse E_AS. Used in UPS output stages and DC-DC secondary-side switching.

For engineers reviewing the IRFR3607PBF datasheet, IRFR3607PBF pinout, IRFR3607PBF application, or IRFR3607PBF equivalent, key selection criteria include its 75V V_DSS, 56A continuous current at T_C = 25°C, body diode reverse recovery time (t_rr = 33–50 ns), low C_oss (280 pF), and D-Pak thermal resistance (R_θJC = 1.045 °C/W).

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted edge termination to achieve stable 75V breakdown voltage (V_(BR)DSS) and low temperature coefficient (0.096 V/°C). Its dynamic parameters-Q_gd = 16 nC, Q_gs = 13 nC, and C_rss = 130 pF-are tuned for fast switching with controlled dv/dt during hard commutation.

The integrated body diode supports synchronous rectification with t_rr ≤ 50 ns at T_J = 125°C and I_F = 46A, while dI/dt capability up to 1920 A/µs enables robust operation in unclamped inductive switching. Avalanche performance is characterized per JEDEC JESD24-11, with E_AS = 310 mJ at T_J = 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Maximum blocking voltage before avalanche onset; ensures safe operation in 48V bus systems with transient margin.
R_DS(on) max	9.0 mΩ - Worst-case on-resistance at T_J = 125°C and V_GS = 10V; determines conduction loss in high-current paths.
I_D (pkg)	56 A - Package-limited continuous drain current at T_C = 25°C; constrained by leadframe thermal and current-carrying capacity.
Q_g	56 nC - Total gate charge required to fully turn on; directly impacts gate driver power and switching speed in 100–500 kHz SMPS.
t_rr	33–50 ns - Body diode reverse recovery time; critical for minimizing shoot-through and EMI in synchronous rectifiers.
E_AS	310 mJ - Single-pulse avalanche energy rating; enables reliable operation under inductive fault conditions without external snubbers.
R_θJC	1.045 °C/W - Junction-to-case thermal resistance; allows direct heatsinking to PCB copper or external heatsink for >50W dissipation.

Pinout & Package

IRFR3607PBF uses the D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard G-D-S order (left-to-right when viewed from top with marking side up and leads pointing downward).

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives 10V logic-level drive to modulate channel conductivity; threshold voltage 2.0–4.0 V enables compatibility with 3.3V/5V controllers via gate boosting.
Drain (D)	High-side power terminal	Connected to PCB copper pour for heat dissipation and low-inductance high-current return path; electrically tied to backside metal tab.
Source (S)	Reference node	Serves as common return for gate drive and load current; requires low-impedance Kelvin connection in high-di/dt applications to avoid false turn-on.

Key Features

Feature	Design Value
Enhanced avalanche SOA	310 mJ single-pulse E_AS with full characterization per JEDEC JESD24-11 - eliminates need for external clamping in UPS and motor drive fault protection.
Optimized dynamic dv/dt ruggedness	Rated for >10 V/ns dv/dt immunity - prevents spurious turn-on during fast voltage transients in half-bridge configurations.
Low C_oss and C_rss	C_oss = 280 pF, C_rss = 130 pF - reduces Miller-induced delay and improves zero-voltage switching (ZVS) range in resonant converters.
Fast body diode recovery	t_rr = 33 ns (T_J = 25°C), Q_rr = 32 nC - minimizes reverse recovery loss and associated EMI in synchronous buck and LLC secondaries.
Thermally efficient D-Pak	R_θJC = 1.045 °C/W - enables >50W continuous power dissipation with minimal case-to-heatsink interface resistance.

Applications

UPS Output Stage

Synchronous Rectifier in Telecom DC-DC

Use Scenario: High-efficiency 48V-to-12V isolated DC-DC converter in online double-conversion UPS systems operating at 200–300 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diodes; switched complementary to primary-side FET with precise dead-time control.

Use Value: Reduces conduction loss by >60% vs. 40V Schottky, enabling >95% efficiency at full load and eliminating forced-air cooling.

Use Scenario: Secondary-side rectification in 48V input telecom brick supplies delivering 12V/30A to server motherboards.

IC Role / Device Role / Timing Role: N-channel power switch in synchronous buck topology; driven by dedicated gate controller with adaptive dead-time adjustment.

Use Value: Achieves <1.5 W conduction loss at 30A due to 7.34 mΩ R_DS(on), lowering thermal stress on PCB and improving MTBF.

Hard-Switched Motor Drive Inverter

Industrial SMPS Primary Switch

Use Scenario: 24V/48V BLDC inverter stage in automated guided vehicles (AGVs), switching at 15–25 kHz with unclamped inductive loads.

IC Role / Device Role / Timing Role: Half-bridge low-side switch subjected to repetitive unclamped inductive energy; relies on intrinsic avalanche capability for fault tolerance.

Use Value: Withstands 46A I_AR and 310 mJ E_AS, eliminating discrete avalanche snubbers and reducing BOM count by two components per phase.

Use Scenario: 75V-rated primary-side switch in 24V-input industrial AC-DC front-end with active PFC and LLC resonant stage.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET in totem-pole PFC bridge leg; operated with ZVS at light load and hard-switched at peak current.

Use Value: Low Q_gd/Q_gs ratio (16/13 ≈ 1.23) enables clean turn-off with minimal voltage overshoot, reducing EMI filter size by 30%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	75V V_DSS, 80A I_D, R_DS(on) = 10.5 mΩ, TO-220 package	Higher R_DS(on) and through-hole mounting; lacks D-Pak's PCB thermal advantage	Preferred where mechanical mounting rigidity is prioritized over thermal density and SMT automation.
IXTP75N075T	75V V_DSS, 75A I_D, R_DS(on) = 7.5 mΩ, TO-220AB package	Similar R_DS(on) but higher Q_g (75 nC) and no characterized avalanche SOA data	Acceptable for non-avalanche-critical linear or soft-switched designs; not recommended for unclamped inductive loads.

Compared with STP75NF75 and IXTP75N075T, IRFR3607PBF offers superior thermal integration via D-Pak, verified avalanche ruggedness, and lower gate charge-making it optimal for space-constrained, high-reliability SMPS and UPS where board-level thermal management and fault tolerance are design-critical.

Availability

IRFR3607PBF is available at Aetrix Electronics and suitable for uninterruptible power supply (UPS) output stages, synchronous rectification in telecom DC-DC converters, and hard-switched motor drive inverters requiring stable component supply across long production lifecycles.

Supply support for IRFR3607PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon-based power devices and system-level solutions.

IRFR3607PBF belongs to the HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-reliability switching in industrial power conversion, UPS, and motor control applications demanding ruggedness and thermal performance.

FAQ

Is IRFR3607PBF suitable for 3.3V gate drive?

No. IRFR3607PBF has a gate threshold voltage range of 2.0–4.0 V and requires ≥10 V V_GS to achieve its specified 9.0 mΩ maximum R_DS(on). At 3.3V, the device remains in weak inversion with R_DS(on) > 100 mΩ, causing excessive conduction loss and thermal runaway. A gate driver with 10–15 V output is mandatory.

What is the maximum allowable case temperature for continuous operation?

The maximum continuous case temperature is 100°C, beyond which the silicon-limited continuous drain current drops from 80A to 56A (package-limited) and further declines per the derating curve. Operation above 100°C risks exceeding T_Jmax = 175°C even with R_θJC = 1.045 °C/W, especially under >40A load currents.

Does IRFR3607PBF have a built-in ESD protection diode?

No. IRFR3607PBF does not integrate gate protection diodes. Its gate oxide is rated for ±20 V absolute maximum V_GS, and exposure to ESD events >2 kV HBM can cause permanent gate oxide damage. External TVS or RC snubbers on the gate trace are required in handling and PCB layout.

Can IRFR3607PBF be paralleled with identical units?

Yes, but only with strict layout symmetry: matched gate trace inductance (<0.5 nH difference), Kelvin source connections, and shared thermal plane. The positive R_DS(on) temperature coefficient (0.096 V/°C) provides inherent current sharing, but mismatched parasitics can cause >30% current imbalance at 100 kHz switching.

IRFR3607PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 46A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 84 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3070 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3607PBF FAQ

1.How can I place an order for IRFR3607PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3607PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3607PBF reliable?

The price and inventory of IRFR3607PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3607PBF is usually 5 days.

3.What payment methods are accepted for IRFR3607PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3607PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3607PBF?

IRFR3607PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3607PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3607PBF?

For technical support, including IRFR3607PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3607PBF requirements.

6.How does Aetrix verify that IRFR3607PBF is sourced from the original manufacturer or authorized distributors?

All IRFR3607PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3607PBF meets industry standards.

7.What is the process for return or replacement of IRFR3607PBF?

All IRFR3607PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3607PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3607PBF part is unused and in its original packaging.

Return procedure for IRFR3607PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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