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Infineon Technologies IRFR3704
- Part No.:
- IRFR3704
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR3704.pdf
- Description:
- MOSFET N-CH 20V 75A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,239
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Product details
Overview
IRFR3704 from Infineon Technologies is a 20V, 75A D-Pak (TO-252AA) N-channel HEXFET Power MOSFET optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators. It delivers ultra-low RDS(on) of 9.5 mΩ at VGS = 10 V, features fully characterized avalanche capability (EAS = 216 mJ), and supports 100% RG testing for gate robustness - deployed in telecom power supplies and CPU VRMs.
For engineers reviewing the IRFR3704 datasheet, IRFR3704 pinout, IRFR3704 application, or IRFR3704 equivalent, key selection criteria include its 9.5 mΩ on-resistance at 10 V gate drive, 19 nC total gate charge, 1.7 °C/W junction-to-case thermal resistance, and validated performance in 100–500 kHz switching topologies with synchronous rectification.
Technical Context
The IRFR3704 employs planar silicon HEXFET architecture with optimized cell pitch and trench-free doping to achieve low RDS(on) while maintaining rugged unclamped inductive switching (UIS) performance. Its gate threshold voltage (1.0–3.0 V) enables compatibility with 4.5 V logic-level drive, and its 155 pF Crss ensures manageable Miller effect in hard-switched converters.
Thermal design leverages the D-Pak's exposed drain pad for direct PCB copper conduction: RθJA is 50 °C/W on 1"² FR-4, enabling 62 W continuous dissipation at TC = 25 °C. The device is fully specified across −55 °C to +175 °C junction temperature range, with positive V(BR)DSS tempco (0.021 V/°C) supporting stable breakdown under thermal stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum blocking voltage for low-voltage synchronous rectifier or high-side switch in ≤12 V input systems. |
| RDS(on) max | 9.5 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 75 A, critical for efficiency in high-current CPU power stages. |
| ID continuous | 75 A @ TC = 25 °C - Sustains full rated current when mounted on 1"² PCB with adequate copper area. |
| Qg | 19 nC - Low gate charge reduces driver power and switching losses in 100–300 kHz DC-DC converters. |
| EAS | 216 mJ - Confirmed single-pulse avalanche energy supports reliable operation during transient overloads without snubbers. |
| RθJC | 1.7 °C/W - Enables precise junction temperature estimation via case temperature measurement in thermal management. |
| Crss | 155 pF - Low reverse transfer capacitance minimizes Miller-induced shoot-through risk in synchronous buck topologies. |
Pinout & Package
D-Pak (TO-252AA) package with exposed drain pad on bottom side for thermal and electrical connection; 3-pin surface-mount outline with lead-free finish per JEDEC standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - Gate | Control terminal | High-impedance MOS gate requiring <3.2 Ω series resistance to damp ringing; driven by dedicated gate driver IC or controller output. |
| 2 - Drain | Power output node | Internally connected to exposed metal pad - must be soldered to large copper pour for thermal conduction and low-inductance return path. |
| 3 - Source | Reference node / current return | Serves as local ground reference for gate drive; connects to power ground plane with minimal trace inductance to reduce switching noise. |
| 4 - Drain | Power output node (duplicate) | Second drain connection for enhanced current sharing and lower package inductance; electrically identical to Pin 2. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 9.5 mΩ at 10 V enables <1.5 W conduction loss at 75 A, directly improving system efficiency in high-current VRMs. |
| Fully characterized avalanche | 216 mJ EAS rating verified per JEDEC JESD24-11 allows safe operation during inductive turn-off transients without external clamping. |
| Low Qg and Qgd | 19 nC total and 6.4 nC Miller charge reduce switching energy and improve controllability in high-frequency (>200 kHz) topologies. |
| 100% RG tested | Guarantees gate resistance within 0.3–3.2 Ω range, ensuring consistent turn-on/turn-off timing and driver compatibility. |
| Optimized body diode | 38–62 ns trr and 45–75 nC Qrr support efficient synchronous rectification with reduced reverse recovery loss. |
Applications
| Telecom DC-DC Converters | CPU Voltage Regulators |
|---|---|
|
Use Scenario: Primary-side synchronous rectifier in 48 V–12 V isolated forward or LLC converters for base station power modules. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency above 90%. Use Value: 9.5 mΩ RDS(on) cuts rectifier loss by >60% vs. 40 V Schottky, enabling higher power density and cooler operation at 200 kHz switching. |
Use Scenario: High-current phase FET in multiphase buck converters supplying modern x86 processors (e.g., Intel Core i9 VRM). IC Role / Device Role: Power stage switch handling up to 75 A per phase with tight thermal constraints on multilayer PCBs. Use Value: 1.7 °C/W RθJC and 50 °C/W RθJA allow sustained 75 A operation using only PCB copper, eliminating need for heatsinks. |
| Industrial Motor Drives | LED Driver Power Stages |
|
Use Scenario: Half-bridge low-side switch in 24 V BLDC motor controllers for factory automation actuators. IC Role / Device Role: Fast-switching power switch controlling PWM current to motor windings with integrated body diode commutation. Use Value: 38–62 ns trr and low Qrr minimize switching loss during freewheeling, reducing MOSFET heating in 20–50 kHz PWM. |
Use Scenario: Primary switch in constant-current buck LED drivers for high-bay industrial lighting (100–200 W). IC Role / Device Role: Main power switch regulating average LED current with high duty-cycle operation and thermal cycling. Use Value: −55 °C to +175 °C operating range and 216 mJ EAS ensure reliability in enclosed, thermally stressed luminaires. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR3704PbF | Same die, but in I-Pak (TO-251AA) package - no exposed drain pad; RθJA = 110 °C/W vs. 50 °C/W for D-Pak. | Limited to lower-current (<30 A) or forced-air-cooled designs due to inferior thermal performance. | Select when board space requires smaller footprint and thermal load is <30 W; avoid for 75 A continuous use. |
| SiR872DP | 20 V, 8.0 mΩ, 80 A, PowerPAK SO-8 - lower RDS(on), but Crss = 220 pF and Qg = 25 nC. | Higher Miller charge increases driver stress and limits maximum practical frequency to ~150 kHz. | Prefer for ultra-high-efficiency <30 A designs where layout allows SO-8; not drop-in for D-Pak thermal pads. |
Compared with IRFR3704, IRFR3704PbF trades thermal performance for compactness, while SiR872DP improves conduction loss at the cost of higher switching loss and incompatible packaging - making IRFR3704 optimal for thermally constrained, high-current, high-frequency synchronous rectification.
Availability
IRFR3704 is available at Aetrix Electronics and suitable for telecom power supplies, CPU voltage regulators, industrial motor drives, and LED driver power stages requiring stable component supply and long-term production continuity.
Supply support for IRFR3704 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRFR3704 belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in DC-DC conversion, motor control, and power supply applications demanding low RDS(on) and ruggedness.
FAQ
What is the maximum recommended gate drive voltage for IRFR3704?
The absolute maximum VGS is ±20 V, but the device is fully characterized and optimized for 10 V gate drive. Operation at 4.5 V is supported (RDS(on) = 11 mΩ), enabling logic-level compatibility. Exceeding 16 V offers diminishing returns and risks accelerated gate oxide degradation over time.
Can IRFR3704 be used in parallel configurations?
Yes - its positive RDS(on) temperature coefficient (normalized RDS(on) rises with junction temperature) enables inherent current sharing. For stable parallel operation, match gate drive loop inductance and use individual 1–2 Ω gate resistors to suppress oscillation between paralleled devices.
Does IRFR3704 require a gate resistor, and what value is recommended?
A gate resistor is mandatory to control dV/dt and prevent ringing. For typical 200 kHz buck converter operation with a 2 A peak driver, a 1.8 Ω resistor yields td(on)/td(off) ≈ 8.4/12 ns and tr/tf ≈ 98/5.0 ns - matching the datasheet test conditions and minimizing EMI without sacrificing speed.
How does the body diode performance impact synchronous rectifier design?
The body diode has trr = 38–62 ns and Qrr = 45–75 nC at TJ = 125 °C. In synchronous rectifiers, this reverse recovery charge must be absorbed by the complementary switch, increasing its turn-on loss. Layout must minimize source inductance to reduce voltage spikes during diode commutation.
IRFR3704 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1996 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 90W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR3704 FAQ
1.How can I place an order for IRFR3704 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR3704 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR3704 reliable?
The price and inventory of IRFR3704 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3704 is usually 5 days.
3.What payment methods are accepted for IRFR3704?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3704 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR3704?
IRFR3704 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR3704 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR3704?
For technical support, including IRFR3704 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3704 requirements.
6.How does Aetrix verify that IRFR3704 is sourced from the original manufacturer or authorized distributors?
All IRFR3704 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3704 meets industry standards.
7.What is the process for return or replacement of IRFR3704?
All IRFR3704 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3704, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR3704 part is unused and in its original packaging.
Return procedure for IRFR3704:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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