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Infineon Technologies IRFR3704TRPBF

Part No.:
IRFR3704TRPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR3704TRPBF.pdf
Description:
MOSFET N-CH 20V 75A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,294

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Product details

Overview

IRFR3704TRPBF from Infineon Technologies (formerly International Rectifier) is a 20V, 75A N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, featuring 9.5mΩ max RDS(on) at VGS = 10V and ultra-low gate charge (19nC), optimized for high-frequency synchronous rectification in telecom DC-DC converters.

For engineers reviewing the IRFR3704TRPBF datasheet, IRFR3704TRPBF pinout, IRFR3704TRPBF application, or IRFR3704TRPBF equivalent, key selection criteria include its 1.7°C/W junction-to-case thermal resistance, 100% RG tested gate resistance, avalanche-rated operation (216mJ single-pulse), and lead-free compliance per JEDEC J-STD-020.

Technical Context

This MOSFET employs HEXFET® silicon technology with fully characterized avalanche voltage and current ratings, enabling robust unclamped inductive switching in hard-switched topologies. Its low RDS(on) and 8.1nC gate-to-source charge support fast turn-on with minimal Miller plateau delay.

The device exhibits a positive temperature coefficient for RDS(on) (0.021V/°C breakdown voltage tempco) and integrates a low-VSD body diode (0.88V typ at 35.5A) with 41–62ns reverse recovery time, making it suitable for bidirectional current paths in buck and LLC resonant converters.

Key Specifications

ParameterValue and Actual Design Meaning
VDS20V - Maximum blocking voltage compatible with 12V input rails and transient margin in point-of-load converters
RDS(on) max9.5mΩ @ VGS = 10V - Enables <1W conduction loss at 35A continuous drain current on FR-4 PCB
ID @ TC = 25°C75A - Sustains high pulsed load currents in server VRMs and GPU power stages
Qg19nC - Reduces gate drive power and enables >1MHz switching in isolated flyback and active clamp forward converters
RθJC1.7°C/W - Allows direct heatsinking to metal-core PCBs or external thermal pads without solder voiding risk
EAS216mJ - Supports reliable operation under unclamped inductive switching stress in motor gate drivers and DC link protection
VGS(th)1.0–3.0V - Ensures clean turn-on with standard 3.3V or 5V logic-level gate drivers

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration optimized for high-current PCB layout with minimal parasitic inductance.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminal (S)Low-side reference node; connects to ground plane or source return path in synchronous buck converters
Pin 2 (Gate)Control input (G)High-impedance MOSFET gate requiring <3.2Ω series resistance to damp ringing during fast edge transitions
Pin 3 (Drain)Power output (D)Exposed copper pad on bottom side - must be soldered to large copper pour for thermal dissipation and low-inductance current return

Key Features

FeatureDesign Value
Ultra-low RDS(on)9.5mΩ max at 10V drive enables <0.5W conduction loss at 23A in 48V-to-12V intermediate bus converters
Fully characterized avalanche rating216mJ single-pulse energy supports reliable operation in non-isolated flyback snubberless designs
100% RG testedGuarantees gate resistance between 0.3–3.2Ω - critical for consistent switching timing in paralleled MOSFET arrays
Lead-free and RoHS compliantMeets JEDEC J-STD-020 reflow profile; Pb-free plating eliminates tin whisker risk in long-life industrial deployments

Applications

Telecom DC-DC ConvertersServer Point-of-Load Regulators

Use Scenario: High-frequency isolated forward converter in 48V telecom rectifier modules delivering 12V/60A output.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode on secondary side to reduce conduction loss and improve efficiency above 92%.

Use Value: 9.5mΩ RDS(on) cuts rectifier losses by 65% vs. 40V/60A Schottky, enabling 5°C lower secondary-side temperature rise.

Use Scenario: Multiphase buck converter supplying core voltage to Xeon-class CPUs in data center servers.

IC Role / Device Role / Timing Role: Low-side switch in 3+1 phase topology operating at 500kHz with interleaved gate drive.

Use Value: 19nC Qg and 1.7°C/W RθJC allow stable 75A peak current handling without derating at 85°C ambient.

Industrial Motor Gate DriversLED Driver Secondary-Side Switching

Use Scenario: Half-bridge gate driver stage controlling 24V BLDC motor windings in factory automation actuators.

IC Role / Device Role / Timing Role: High-side and low-side switching element with integrated body diode conducting freewheeling current during PWM dead-time.

Use Value: 0.88V VSD and 45–75nC Qrr minimize body diode conduction loss and reverse recovery noise in 20kHz PWM operation.

Use Scenario: Secondary-side synchronous rectifier in 36W constant-current LED driver for street lighting.

IC Role / Device Role / Timing Role: Output switch in quasi-resonant flyback regulating 36V/1A output with zero-voltage switching assist.

Use Value: Avalanche rating (216mJ) absorbs leakage inductance spikes during MOSFET turn-off, eliminating need for external clamping diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLR3704PbFSame die, but in smaller I-Pak (TO-251) package with higher RθJA (110°C/W vs. 50°C/W)Limited to lower-power (<40A) applications due to reduced thermal mass and no exposed drain padSelect when board space is constrained and thermal budget allows 30% lower current rating
STL325N10F7100V rated, 3.2mΩ RDS(on), 120A ID, but higher Qg (42nC) and larger PowerFLAT 5x6 packageBetter for 48V systems requiring higher voltage margin; less optimal for 12V/20V rail optimizationChoose for future-proofing against input overvoltage transients in industrial 24V systems

Compared with IRLR3704PbF, IRFR3704TRPBF delivers 40% better thermal performance and full 75A capability; versus STL325N10F7, it offers 55% lower gate charge for faster switching but sacrifices voltage headroom and peak current capacity.

Availability

IRFR3704TRPBF is available at Aetrix Electronics and suitable for telecom power supplies, server VRMs, industrial motor drives, and LED lighting systems requiring stable component supply across multi-year production cycles.

Supply support for IRFR3704TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with legacy expertise from International Rectifier's HEXFET® MOSFET portfolio.

This part belongs to the IRFR/U3704 family of low-voltage, high-current power MOSFETs designed specifically for high-efficiency, high-frequency DC-DC conversion in space-constrained telecom and computing infrastructure.

FAQ

What is the maximum continuous drain current at 70°C case temperature?

The IRFR3704TRPBF supports 63A continuous drain current at TC = 70°C with VGS = 10V, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area (1" square FR-4) and unrestricted airflow. Derating is required above 70°C case temperature per the linear derating factor of 0.58W/°C.

Does this MOSFET require a gate resistor for stability in 500kHz switching?

Yes - a gate resistor between 5Ω and 15Ω is recommended to damp high-frequency oscillation caused by gate-drain capacitance (Crss = 155pF) and PCB trace inductance. The device's specified RG range (0.3–3.2Ω) refers to intrinsic gate resistance, not external series resistance needed for EMI control and shoot-through prevention.

Can the body diode be used for continuous freewheeling in a half-bridge configuration?

Yes - the integrated body diode is rated for 75A continuous source current (IS) and 300A pulsed (ISM) at TJ = 125°C. However, its 0.88V forward drop and 41–62ns reverse recovery time mean it should only be used for short-duration freewheeling; synchronous commutation is preferred for >10kHz operation to avoid Qrr-related losses.

Is IRFR3704TRPBF suitable for automotive under-hood applications?

No - while qualified for industrial temperature range (−55°C to +175°C), it lacks AEC-Q101 qualification, PPAP documentation, and automotive-grade traceability. Its packaging and test flow are optimized for telecom/computing, not automotive vibration, humidity, or long-term reliability requirements per ISO/TS 16949.

IRFR3704TRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
9.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1996 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
90W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRFR3704TRPBF FAQ

1.How can I place an order for IRFR3704TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3704TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3704TRPBF reliable?

The price and inventory of IRFR3704TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3704TRPBF is usually 5 days.

3.What payment methods are accepted for IRFR3704TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3704TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3704TRPBF?

IRFR3704TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3704TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3704TRPBF?

For technical support, including IRFR3704TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3704TRPBF requirements.

6.How does Aetrix verify that IRFR3704TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3704TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3704TRPBF meets industry standards.

7.What is the process for return or replacement of IRFR3704TRPBF?

All IRFR3704TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3704TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3704TRPBF part is unused and in its original packaging.

Return procedure for IRFR3704TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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