Infineon Technologies IRFR3704ZCPBF

Overview

IRFR3704ZCPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-252 (D-Pak) package, rated for 40 V V_DS, 62 A I_D (T_C = 100°C), and 4.5 mΩ R_DS(on) @ V_GS = 10 V. It serves as a high-efficiency synchronous rectifier or low-side switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRFR3704ZCPBF datasheet, IRFR3704ZCPBF pinout, IRFR3704ZCPBF application, or IRFR3704ZCPBF equivalent, key selection criteria include its low on-resistance at standard gate drive, D-Pak thermal performance, 100% avalanche-rated ruggedness, and compatibility with 5 V logic-level gate control in compact board space-constrained designs.

Technical Context

This MOSFET uses planar silicon process technology with optimized cell pitch and trench-assisted charge balancing to achieve low R_DS(on) × Q_g figure-of-merit. Its gate threshold voltage is 2.0–4.0 V, enabling reliable turn-on with 3.3 V or 5 V microcontroller outputs without level-shifting.

The device features fully characterized UIS (Unclamped Inductive Switching) capability up to 100 mJ at T_J = 25°C, and specified E_AS rating supports robust operation in hard-switched topologies. Body diode reverse recovery time t_rr is 55 ns with Q_rr = 39 nC under I_F = 30 A, V_DD = 25 V, and dI/dt = 100 A/µs.

Key Specifications

Pinout & Package

IRFR3704ZCPBF is housed in a surface-mount TO-252 (D-Pak) package with exposed drain pad for enhanced thermal dissipation. The package measures 6.7 mm × 6.2 mm × 2.4 mm and requires solderable thermal land per JEDEC MO-238.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Compared with IRFR3704ZCPBF, STL130N4F7AG offers lower on-resistance but requires larger thermal management; NTMFS4C08NT1G delivers faster switching with identical footprint-making it superior for >300 kHz designs where gate loss outweighs conduction loss.

Availability

IRFR3704ZCPBF is available at Aetrix Electronics and suitable for DC-DC converters, automotive body electronics, industrial PLC output stages, and LED drivers requiring stable component supply across multi-year production cycles.

Supply support for IRFR3704ZCPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's OptiMOS™ 40 V N-channel power MOSFET product line, engineered for high-efficiency, high-current switching in space-constrained 12 V and 24 V systems.

FAQ

Is IRFR3704ZCPBF suitable for 3.3 V logic-level gate drive?

No-it is not a logic-level MOSFET. Its gate threshold voltage range is 2.0–4.0 V, and full enhancement requires ≥10 V V_GS for rated R_DS(on). At 3.3 V, R_DS(on) rises to >25 mΩ, increasing conduction loss significantly. A dedicated gate driver or level shifter is required for reliable operation with 3.3 V controllers.

What is the maximum safe operating temperature for continuous operation?

The absolute maximum junction temperature is 175°C, but continuous operation should be limited to T_J ≤ 150°C per Infineon's reliability guidelines. With standard 2 oz copper + 2 thermal vias under the drain pad, the device sustains 62 A at T_C = 100°C-corresponding to ~135°C T_J in typical 4-layer PCB layouts.

Does IRFR3704ZCPBF have integrated ESD protection?

No. It lacks on-chip ESD protection structures. Gate oxide withstands only ±20 V HBM per specification. External gate resistors (≥10 Ω) and series Zener clamps (e.g., 12 V TVS) are mandatory in production systems to prevent electrostatic damage during handling and assembly.

Can this MOSFET replace IRF3704 in existing designs?

Yes-IRFR3704ZCPBF is the surface-mount (TO-252) variant of the through-hole IRF3704 (TO-220). Both share identical electrical specs, thermal characteristics, and pin-compatible gate/drain/source assignments. Layout redesign is needed for footprint, but no circuit changes are required for function or performance.