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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3706PBF

Name: IRFR3706PBF
Brand: Infineon Technologies
SKU: IRFR3706PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3706PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3706PBF.pdf

Description:: MOSFET N-CH 20V 75A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR3706PBF from Infineon Technologies (formerly International Rectifier) is a 20V, 75A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, featuring 9.0mΩ R_DS(on) at V_GS = 10V and ultra-low gate charge (Q_g = 23–35nC), optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators for telecom and server power supplies.

For engineers reviewing the IRFR3706PBF datasheet, IRFR3706PBF pinout, IRFR3706PBF application, or IRFR3706PBF equivalent, key selection criteria include its 4.5V-rated R_DS(on) (8.1–11mΩ), 220mJ single-pulse avalanche energy, body diode reverse recovery performance (t_rr = 45–74ns), and thermal resistance (R_θJC = 1.7°C/W) - all critical for high-efficiency, high-density SMPS design.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free process to achieve low on-resistance while maintaining robust avalanche capability. Its gate threshold voltage (0.6–2.0V) enables reliable 3.3V/4.5V logic-level drive, and the integrated body diode is fully characterized for reverse recovery (Q_rr = 65–120nC) under both 25°C and 125°C conditions.

The device operates within a junction temperature range of –55°C to +175°C and supports pulsed drain currents up to 280A. Its dynamic parameters - including C_iss = 2410pF, C_oss = 1070pF, and Cr_ss = 140pF at V_DS = 10V - are specified for high-frequency switching analysis in hard-switched and resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20V - Maximum blocking voltage compatible with 12V input rails and low-voltage synchronous rectification stages.
R_DS(on) @ 10V	9.0mΩ max - Enables <1W conduction loss at 75A continuous drain current in thermally optimized PCB layouts.
R_DS(on) @ 4.5V	11mΩ max - Supports direct drive from 5V or 4.5V PWM controllers without level-shifting circuitry.
Q_g	23–35nC - Reduces gate drive power and switching transition time, critical for >500kHz operation.
t_rr	45–74ns - Minimizes body diode reverse recovery losses during hard commutation in synchronous buck converters.
E_AS	220mJ - Withstands unclamped inductive switching events in over-current fault conditions without failure.
R_θJC	1.7°C/W - Allows 88W power dissipation at T_C = 25°C when mounted on copper-clad D-Pak footprint per AN-994.

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for enhanced thermal conduction and mechanical stability on PCB. Standard 3-pin configuration: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Accepts 0–12V logic-level signals; low input capacitance (C_iss = 2410pF) reduces driver loading.
D	Drain connection	Internally connected to exposed metal pad; primary heat path to PCB copper area via soldered thermal pad.
S	Source reference node	Common return for gate drive and load current; used as Kelvin source in precision current sensing configurations.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V	11mΩ max enables efficient operation with standard 5V microcontroller GPIO or PWM IC outputs.
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 reflow profile requirements; Pb-free terminations reduce environmental impact and regulatory risk.
Fully characterized avalanche rating	220mJ E_AS and 28A I_AR allow safe operation in inductive switching circuits without external snubbers.
Optimized body diode recovery	Q_rr = 65–120nC and t_rr = 45–74ns minimize shoot-through risk and switching loss in synchronous rectifiers.

Applications

Telecom DC-DC Converters

Server VRMs

Use Scenario: Primary-side synchronous rectifier in 48V-to-12V isolated forward converter for telecom shelf power.

IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diode to reduce conduction loss and improve efficiency above 92%.

Use Value: 9.0mΩ R_DS(on) cuts rectifier loss by >40% vs. 40V Schottky, enabling higher power density and lower thermal stress.

Use Scenario: High-current phase-leg switch in multiphase buck converter supplying CPU core voltage (0.8–1.2V @ 100+ A).

IC Role / Device Role / Timing Role: High-side and low-side FET in interleaved topology operating at 300–600kHz switching frequency.

Use Value: 23–35nC Q_g and 1.7°C/W R_θJC support fast switching with minimal gate drive loss and effective thermal management.

Industrial Motor Drives

LED Driver Power Stages

Use Scenario: Half-bridge output stage in 24V BLDC motor controller for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element handling 75A peak phase current with PWM modulation up to 20kHz.

Use Value: 175°C maximum junction temperature and 280A pulsed current rating ensure reliability under intermittent overload conditions.

Use Scenario: Constant-current buck regulator driving high-power LED arrays in architectural lighting systems.

IC Role / Device Role / Timing Role: Main power switch regulating average LED current with analog/digital dimming control.

Use Value: 0.6–2.0V V_GS(th) allows precise gate biasing for linear dimming mode; low R_DS(on) minimizes thermal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3706PbF	Same die, TO-220AB package; R_θJA = 62°C/W (vs. 50°C/W for D-Pak); no exposed drain pad.	Better suited for through-hole prototyping or heatsink-mounted designs requiring mechanical robustness.	Select when board space permits larger footprint and thermal interface to external heatsink is preferred.
SiR872DP-T1-GE3	20V, 70A, 6.5mΩ @ 4.5V; lower R_DS(on) but higher Q_g (42nC); different gate threshold (1.2–2.5V).	Higher efficiency at light loads due to lower on-resistance, but requires stronger gate driver for same switching speed.	Choose for new designs prioritizing conduction loss reduction where gate drive capability supports higher Q_g.

Compared with IRFR3706PBF, IRLR3706PbF trades PCB thermal performance for mechanical mounting flexibility, while SiR872DP-T1-GE3 improves conduction loss at the cost of increased gate drive demand - making IRFR3706PBF optimal for compact, high-frequency, surface-mount SMPS where thermal pad integration is feasible.

Availability

IRFR3706PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable lead-free sourcing.

Supply support for IRFR3706PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET Power MOSFET product line delivers high-current, low-R_DS(on) silicon solutions for high-efficiency switching power conversion in telecom, computing, and industrial equipment.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR3706PBF supports 53A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capacity at elevated case temperatures and assumes proper PCB copper area per AN-994 layout guidelines.

Does this MOSFET require a gate resistor for safe switching?

A gate resistor (typically 1.8Ω, as used in characterization tests) is recommended to dampen ringing and control dV/dt during turn-on/turn-off. The device's low gate resistance (1.8Ω typical) and 23–35nC total gate charge make it sensitive to parasitic oscillation without proper gate drive impedance matching.

Can IRFR3706PBF be used in linear (analog) mode operation?

No - IRFR3706PBF is not rated or characterized for linear mode operation. Its Safe Operating Area (SOA) curve shows operation is limited to pulse widths ≤10ms at V_DS > 10V, and sustained linear operation risks thermal runaway due to positive temperature coefficient of R_DS(on) and lack of SOA derating data beyond 10ms pulses.

Is the body diode suitable for freewheeling in synchronous rectifier applications?

Yes - the body diode is fully characterized for reverse recovery (t_rr = 45–74ns, Q_rr = 65–120nC) and exhibits low forward voltage (0.82–0.88V at 36A). It is designed for controlled freewheeling in synchronous buck and forward converters, though external Schottky diodes may be added for ultra-low-loss designs.

IRFR3706PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.8V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2410 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3706PBF FAQ

1.How can I place an order for IRFR3706PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3706PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3706PBF reliable?

The price and inventory of IRFR3706PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3706PBF is usually 5 days.

3.What payment methods are accepted for IRFR3706PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3706PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3706PBF?

IRFR3706PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3706PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3706PBF?

For technical support, including IRFR3706PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3706PBF requirements.

6.How does Aetrix verify that IRFR3706PBF is sourced from the original manufacturer or authorized distributors?

All IRFR3706PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3706PBF meets industry standards.

7.What is the process for return or replacement of IRFR3706PBF?

All IRFR3706PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3706PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3706PBF part is unused and in its original packaging.

Return procedure for IRFR3706PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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