Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3706TRPBF

Name: IRFR3706TRPBF
Brand: Infineon Technologies
SKU: IRFR3706TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFR3706TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3706TRPBF.pdf

Description:: MOSFET N-CH 20V 75A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,704

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFR3706TRPBF from Infineon Technologies (formerly International Rectifier) is a 20V, 75A N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, featuring 9.0mΩ R_DS(on) at V_GS = 10V and ultra-low gate charge (Q_g = 23–35nC), optimized for high-frequency synchronous rectification in isolated DC-DC converters for telecom and industrial power supplies.

For engineers reviewing the IRFR3706TRPBF datasheet, IRFR3706TRPBF pinout, IRFR3706TRPBF application, or IRFR3706TRPBF equivalent, key selection criteria include its 4.5V-rated R_DS(on) (8.1–11mΩ), 280A pulsed drain current capability, avalanche energy rating (E_AS = 220mJ), and thermal resistance (R_θJC = 1.7°C/W) - all critical for compact, high-efficiency SMPS designs.

Technical Context

This HEXFET device uses planar vertical DMOS technology with fully characterized unclamped inductive switching (UIS) performance and body diode reverse recovery parameters (t_rr = 45–74ns, Q_rr = 65–120nC) validated across -55°C to +175°C junction temperature range.

Its gate threshold voltage (V_GS(th) = 0.6–2.0V) enables robust low-voltage drive compatibility, while dynamic parameters - including C_iss = 2410pF, C_oss = 1070pF, and Cr_ss = 140pF at V_DS = 10V - support precise modeling of switching losses in hard-switched and resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20V - Maximum blocking voltage; defines use in ≤20V input/output rail applications.
R_DS(on) @ 10V	9.0mΩ max - Enables <1W conduction loss at 75A DC, critical for high-current synchronous rectifiers.
I_D @ T_C = 25°C	75A - Continuous drain current rating under ideal heatsinking; sets PCB copper area and thermal pad requirements.
Q_g	23–35nC - Low total gate charge reduces driver power and switching transition time in MHz-range converters.
t_rr	45–74ns - Fast body diode recovery minimizes shoot-through risk and EMI in synchronous buck/forward topologies.
E_AS	220mJ - Single-pulse avalanche energy rating supports robustness against transient overvoltage events without external snubbers.
R_θJC	1.7°C/W - Junction-to-case thermal resistance enables direct thermal interface to heatsink or copper pour for >80W dissipation.

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; standard 3-pin configuration (Drain, Gate, Source) with pin 1 = Gate, pin 2 = Drain (tab), pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (Pin 1)	Control terminal	Receives logic-level or PWM drive signal; requires <200nA leakage at ±12V to ensure stable turn-on/off.
Drain (Pin 2 / Tab)	High-side power node	Electrically and thermally connected to PCB copper pour; carries full load current and dissipates heat directly to heatsink.
Source (Pin 3)	Reference node	Serves as return path for drain current and gate drive reference; low-inductance layout essential for minimizing switching oscillation.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V	8.1–11mΩ - Enables efficient operation with 5V or 3.3V gate drivers in point-of-load converters.
Fully characterized avalanche	E_AS = 220mJ, I_AR = 28A - Eliminates need for external clamping circuits in inductive switching applications.
Low gate-to-drain charge (Q_gd)	5.5–8.3nC - Reduces Miller effect, enabling faster turn-off and improved noise immunity in high-dV/dt environments.
Lead-free and RoHS-compliant	"PbF" suffix - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for standard reflow assembly.

Applications

Telecom DC-DC Converters

Industrial SMPS

Use Scenario: 48V-to-12V isolated forward converter in base station power modules.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode on secondary side to reduce conduction loss and improve efficiency above 90%.

Use Value: 9.0mΩ R_DS(on) cuts rectifier loss by >60% vs. 40V Schottky, enabling smaller heatsinks and higher power density.

Use Scenario: 24V-input buck converter powering PLC I/O modules with tight thermal constraints.

IC Role / Device Role / Timing Role: High-side switch in non-isolated step-down regulator operating at 500kHz switching frequency.

Use Value: 23–35nC Q_g allows clean 10ns-scale transitions with standard gate drivers, reducing switching loss by ~35% vs. legacy MOSFETs.

Server VRMs

Automotive DC-DC Modules

Use Scenario: Multiphase CPU core voltage regulator delivering up to 200A at 1.0V.

IC Role / Device Role / Timing Role: Low-side synchronous FET in interleaved buck stage, driven by dedicated gate controller.

Use Value: 75A continuous rating and 280A pulsed current support parallel-phase current sharing without derating.

Use Scenario: 12V-to-5V/3.3V DC-DC module in ADAS camera ECU with extended temperature requirement.

IC Role / Device Role / Timing Role: Primary switch in automotive-grade buck converter qualified per AEC-Q101.

Use Value: -55°C to +175°C operating range and 220mJ avalanche rating ensure reliability under load dump and cold-crank conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3706PbF	Same die, but in TO-220AB package; R_θJA = 62°C/W (vs. 50°C/W for D-Pak); no exposed drain tab.	Limited to lower-power through-hole designs; unsuitable for high-density SMT layouts requiring thermal pad attachment.	Select when mechanical mounting or manual prototyping is prioritized over thermal performance and board space.
STP36NF20	200V V_DS, 36A I_D, 50mΩ R_DS(on); higher voltage rating but significantly higher on-resistance and gate charge.	Designed for universal-input offline SMPS; not suitable for low-voltage, high-current synchronous rectification.	Choose only if system requires >100V blocking capability - otherwise inferior efficiency and thermal performance.

Compared with IRLR3706PbF and STP36NF20, IRFR3706TRPBF delivers optimal balance of low R_DS(on), fast switching, and thermal efficiency specifically for ≤20V, high-current DC-DC stages - making it the preferred choice for telecom and industrial power modules where size, efficiency, and reliability are co-constrained.

Availability

IRFR3706TRPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial SMPS, and server VRMs requiring stable component supply, long-term lifecycle support, and traceable lead-free sourcing.

Supply support for IRFR3706TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with heritage from International Rectifier's HEXFET® MOSFET portfolio.

This part belongs to the HEXFET Power MOSFET product line, engineered for high-efficiency, high-frequency switching in switched-mode power supplies - emphasizing low R_DS(on), fast body diode recovery, and rugged avalanche performance.

FAQ

Is IRFR3706TRPBF suitable for 3.3V gate drive?

Yes - its gate threshold voltage (V_GS(th) = 0.6–2.0V) and specified R_DS(on) down to 2.8V V_GS (11.5–23mΩ) confirm reliable enhancement-mode operation with 3.3V logic-level drivers, though full 75A current capability requires ≥4.5V gate bias per datasheet test conditions.

What is the maximum PCB copper area needed for thermal management?

With R_θJC = 1.7°C/W and R_θJA = 50°C/W (PCB mount), achieving 88W dissipation at T_J = 175°C requires ≥1"² of 2oz copper with thermal vias under the drain pad; layout per AN-994 is mandatory to meet rated power limits.

Does IRFR3706TRPBF have avalanche rating certification?

Yes - it is fully characterized for unclamped inductive switching with E_AS = 220mJ at T_J = 25°C and I_AR = 28A, verified per JEDEC JESD24-11; no derating required for single-event transients within these limits.

Can IRFR3706TRPBF replace IRFR3707 in existing designs?

No - IRFR3707 has 30V V_DS and 7.5mΩ R_DS(on) at 10V, but shares identical package and pinout; substitution requires verification of system overvoltage margin and thermal headroom due to higher R_DS(on) and lower V_DS rating.

IRFR3706TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.8V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2410 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3706TRPBF FAQ

1.How can I place an order for IRFR3706TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3706TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3706TRPBF reliable?

The price and inventory of IRFR3706TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3706TRPBF is usually 5 days.

3.What payment methods are accepted for IRFR3706TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3706TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3706TRPBF?

IRFR3706TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3706TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3706TRPBF?

For technical support, including IRFR3706TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3706TRPBF requirements.

6.How does Aetrix verify that IRFR3706TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3706TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3706TRPBF meets industry standards.

7.What is the process for return or replacement of IRFR3706TRPBF?

All IRFR3706TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3706TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3706TRPBF part is unused and in its original packaging.

Return procedure for IRFR3706TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…