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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3707PBF

Name: IRFR3707PBF
Brand: Infineon Technologies
SKU: IRFR3707PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3707PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3707PBF.pdf

Description:: MOSFET N-CH 30V 61A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR3707PBF from Infineon Technologies (formerly International Rectifier) is a 30V, 61A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators for telecom and industrial power supplies. It features ultra-low 13mΩ R_DS(on) at V_GS = 10V, 19nC total gate charge, and 213mJ single-pulse avalanche energy.

For engineers reviewing the IRFR3707PBF datasheet, IRFR3707PBF pinout, IRFR3707PBF application, or IRFR3707PBF equivalent, key selection criteria include R_DS(on) at 4.5V (17.5mΩ), diode reverse recovery charge (Q_rr = 49–74nC), thermal resistance R_θJC = 1.73°C/W, and SOA limits for 10µs–10ms pulse operation.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with fully characterized unclamped inductive switching (UIS) capability and integrated body diode optimized for low Q_rr and soft recovery. Its gate threshold voltage (1.0–3.0V) enables 4.5V logic-level drive compatibility while maintaining robust noise immunity.

The device's dynamic parameters-including 8.5ns turn-on delay, 78ns rise time, and 50pF Crss-support efficient operation in 300kHz–1MHz switching topologies. Junction-to-case thermal resistance of 1.73°C/W enables high-power density PCB-mount designs when used with copper-clad heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30V - Maximum blocking voltage for 24V-input DC-DC stages and 12V/5V point-of-load converters
R_DS(on) @ V_GS=10V	13mΩ - Enables ≤1.2W conduction loss at 61A continuous drain current (T_C=25°C)
Q_g	19nC - Determines gate driver power requirement and switching loss in high-frequency operation
E_AS	213mJ - Specifies safe single-pulse inductive energy handling without failure during transient overloads
R_θJC	1.73°C/W - Defines junction-to-heatsink thermal path efficiency for forced-air or conductive cooling
Q_rr	49–74nC - Quantifies body diode recovery charge affecting cross-conduction loss in synchronous rectifiers
V_GS(th)	1.0–3.0V - Ensures reliable turn-on with standard 3.3V/5V logic drivers while avoiding spurious activation

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Receives voltage-controlled signal to modulate channel conductivity; requires <19nC charge for full enhancement
D	Drain current path	High-current output node connected to PCB copper pour for heat dissipation and low-inductance return
S	Source reference terminal	Common return path for load current and gate drive reference; tied to power ground plane

Key Features

Feature	Design Value
Ultra-low R_DS(on)	13mΩ @ 10V ensures <1.2W conduction loss at rated 61A, reducing thermal stress in compact power stages
Fully characterized avalanche	213mJ E_AS rating supports robust operation under inductive switching transients without derating
Low gate charge	19nC Q_g minimizes driver losses and enables efficient 500kHz+ switching in telecom SMPS
Optimized body diode	Q_rr = 49–74nC and t_rr = 39–63ns reduce shoot-through risk and improve efficiency in synchronous rectification
Lead-free construction	PbF suffix confirms RoHS-compliant termination and reflow compatibility per JEDEC J-STD-020

Applications

Telecom DC-DC Converters

Industrial Buck Regulators

Use Scenario: 48V-to-12V isolated forward converter in base station power modules.

IC Role / Device Role: Synchronous rectifier replacing Schottky diode on secondary side.

Use Value: 13mΩ R_DS(on) cuts conduction loss by >40% vs. 40V Schottky, improving full-load efficiency from 92% to 94.5%.

Use Scenario: 24V-to-3.3V high-current buck converter for PLC I/O modules.

IC Role / Device Role: High-side switch in multiphase VRM architecture.

Use Value: 19nC Q_g enables 1MHz operation with <1.5W gate drive loss, supporting tight regulation bandwidth.

Server Point-of-Load

Motor Drive Half-Bridge

Use Scenario: 12V-to-1.2V CPU core supply with 3-phase interleaved topology.

IC Role / Device Role: Low-side switch in synchronous buck stage.

Use Value: 1.73°C/W R_θJC allows 61A continuous current with <45°C junction rise on 2oz copper heatsink.

Use Scenario: 24V BLDC motor gate driver half-bridge in factory automation actuator.

IC Role / Device Role: Low-side switch with integrated body diode freewheeling path.

Use Value: Soft-recovery Q_rr of 49nC suppresses voltage spikes during PWM commutation, eliminating snubber components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP36NF20	200V V_DS, 36A I_D, 55mΩ R_DS(on) - higher voltage rating but lower current and higher on-resistance	Designed for 100–200V flyback and PFC stages, not optimized for 30V synchronous rectification	Select only if system requires >100V blocking capability and can tolerate 4× higher conduction loss
IXTP30N10P	100V V_DS, 30A I_D, 32mΩ R_DS(on), TO-220 package - higher R_DS(on) and through-hole mounting	Targeted at medium-voltage linear regulators and discrete motor drivers, not high-frequency SMPS	Choose for prototyping with breadboard-compatible leaded package, not for production PCB space constraints

Compared with STP36NF20 and IXTP30N10P, IRFR3707PBF delivers superior power density and switching efficiency in 30V-class DC-DC converters due to its 13mΩ R_DS(on), 1.73°C/W thermal resistance, and D-Pak footprint enabling direct PCB heatsinking.

Availability

IRFR3707PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial buck regulators, and server point-of-load supplies requiring stable component supply and long-term lifecycle support.

Supply support for IRFR3707PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with legacy roots in International Rectifier's power MOSFET innovation.

The HEXFET product line was engineered specifically for high-efficiency, high-frequency switched-mode power supplies-emphasizing low R_DS(on), fast switching, and rugged avalanche performance in compact surface-mount packages.

FAQ

What is the maximum continuous drain current at 70°C case temperature?

The IRFR3707PBF supports 51A continuous drain current at T_C = 70°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D-Pak package and must be validated against actual board layout and airflow conditions.

Does this MOSFET require a gate resistor for stability in 500kHz operation?

A gate resistor of 1.8Ω is used in the datasheet's switching time test circuit (Fig 10a), confirming stable turn-off behavior at high frequency. For 500kHz designs, a 1–3Ω non-inductive resistor is recommended to dampen ringing without compromising switching speed.

Can IRFR3707PBF replace a Schottky diode in synchronous rectification?

Yes-it is explicitly qualified for synchronous rectification in high-frequency DC-DC converters. Its low R_DS(on) (13mΩ), low Q_rr (49–74nC), and soft-recovery body diode enable higher efficiency than 40V Schottky diodes in 12–24V output stages.

What is the recommended PCB footprint for thermal performance?

The datasheet references Application Note AN-994 for optimal layout: a minimum 1" square copper area (2oz FR-4) connected directly to the exposed drain pad, with thermal vias to inner ground planes. This achieves the rated R_θJA = 50°C/W in PCB-mount configuration.

IRFR3707PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 61A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1990 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 87W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3707PBF FAQ

1.How can I place an order for IRFR3707PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3707PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3707PBF reliable?

The price and inventory of IRFR3707PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3707PBF is usually 5 days.

3.What payment methods are accepted for IRFR3707PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3707PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3707PBF?

IRFR3707PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3707PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3707PBF?

For technical support, including IRFR3707PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3707PBF requirements.

6.How does Aetrix verify that IRFR3707PBF is sourced from the original manufacturer or authorized distributors?

All IRFR3707PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3707PBF meets industry standards.

7.What is the process for return or replacement of IRFR3707PBF?

All IRFR3707PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3707PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3707PBF part is unused and in its original packaging.

Return procedure for IRFR3707PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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