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Infineon Technologies IRFR3707TRPBF

Part No.:
IRFR3707TRPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR3707TRPBF.pdf
Description:
MOSFET N-CH 30V 61A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,258

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Product details

Overview

IRFR3707TRPBF from Infineon Technologies (formerly International Rectifier) is a 30V, 61A N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, featuring 13mΩ RDS(on) at VGS = 10V, ultra-low gate charge (19nC), and rated for high-frequency synchronous rectification in isolated DC-DC converters used in telecom and industrial power supplies.

For engineers reviewing the IRFR3707TRPBF datasheet, IRFR3707TRPBF pinout, IRFR3707TRPBF application, or IRFR3707TRPBF equivalent, key selection criteria include its 13mΩ on-resistance at 10V drive, 244A pulsed drain capability, 213mJ single-pulse avalanche energy rating, and optimized gate charge profile for hard-switched and resonant topologies.

Technical Context

This HEXFET device employs planar vertical DMOS structure with fully characterized avalanche performance and low reverse transfer capacitance (50pF), enabling robust operation under inductive switching stress. Its gate threshold voltage (1.0–3.0V) and transconductance (37S) support reliable turn-on with standard 3.3V/5V logic-level drivers when used with appropriate gate resistance.

The MOSFET integrates a fast body diode with 39–63ns reverse recovery time and 49–93nC Qrr, making it suitable for synchronous rectification where diode conduction and commutation losses must be minimized. Thermal resistance RθJC is 1.73°C/W, confirming efficient heat transfer to the PCB pad in surface-mount applications.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30V - Maximum blocking voltage for 24V-input DC-DC stages and point-of-load regulators
RDS(on) max13mΩ @ VGS = 10V - Enables <1W conduction loss at 61A continuous current in thermally optimized layouts
ID cont61A @ TC = 25°C - Supports high-current synchronous rectifier legs without paralleling
Qg19nC - Reduces gate drive power and enables >500kHz switching with low-side driver ICs
EAS213mJ - Withstands unclamped inductive energy during hard-switching fault conditions
RθJC1.73°C/W - Requires minimal copper area for thermal relief when mounted on FR-4 PCB
VGS(th)1.0–3.0V - Ensures turn-on compatibility with 3.3V microcontroller GPIO or dedicated gate drivers
Qrr49–93nC - Limits diode recovery loss and EMI generation in high-dV/dt synchronous rectifiers

Pinout & Package

IRFR3707TRPBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical connection. The package features gull-wing leads compatible with standard reflow profiles and supports high-current PCB routing via the drain tab.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminal of N-channel MOSFETReference node for gate drive; connects to low-side return path and power ground plane
Pin 2 (Gate)Control electrodeHigh-impedance input requiring <200nA leakage control; driven by low-ohmic gate driver to minimize switching loss
Pin 3 (Drain)Power output terminalExposed metal pad on bottom side; electrically and thermally connected to high-side switching node and heatsink plane

Key Features

FeatureDesign Value
Ultra-low RDS(on)13mΩ at 10V drive enables <0.5W conduction loss at 40A in 12V-output buck converters
Fully characterized avalanche213mJ single-pulse rating verified per JEDEC JESD24-1, supporting ruggedness in flyback and LLC primary switches
Low Qgd/Qg ratio6.3nC Miller charge / 19nC total gate charge = 0.33 - improves immunity to dv/dt-induced false turn-on
Optimized body diode39ns trr and 49nC Qrr at 25°C reduce reverse recovery loss in synchronous rectifier mode
Lead-free constructionRoHS-compliant Pb-free plating and halogen-free molding compound meet IPC-J-STD-020 moisture sensitivity level 1

Applications

Telecom DC-DC ConvertersIndustrial SMPS

Use Scenario: 48V-to-12V isolated forward converter in base station power modules.

IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diode in secondary-side rectification stage.

Use Value: Reduces conduction loss by 45% vs. 40V Schottky, improving full-load efficiency from 92% to 94.3% at 50A output.

Use Scenario: 24V-input buck converter powering PLC I/O modules with 5V/3.3V rails.

IC Role / Device Role / Timing Role: High-side main switch in non-isolated step-down regulator operating at 300kHz.

Use Value: 13mΩ RDS(on) limits junction temperature rise to <65°C at 35A continuous, eliminating need for active cooling.

Server VRMsMotor Drive Half-Bridge

Use Scenario: Multiphase CPU core voltage regulator delivering up to 200A at 1.2V.

IC Role / Device Role / Timing Role: Low-side switch in interleaved buck phase leg with integrated driver.

Use Value: 19nC Qg allows clean 1MHz switching with 1.8Ω gate resistor, minimizing dead-time loss and shoot-through risk.

Use Scenario: 24V BLDC motor controller for HVAC fan actuator.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge driving 10A peak motor phase current.

Use Value: 244A pulsed rating accommodates 6× motor stall current without SOA violation during startup or jam events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLR3707ZPBFSame RDS(on) (13mΩ) but logic-level gate (VGS(th) = 1.0–2.5V); 20nC Qg; identical D-Pak packageBetter suited for 3.3V gate drive without level-shifting; slightly higher gate charge increases driver loss at >1MHzSelect when using microcontroller GPIO directly or when gate drive voltage is limited to ≤4.5V
STP30NF20Higher VDS (200V), higher RDS(on) (30mΩ), TO-220 package, 32nC QgDesigned for offline flyback/forward primary switches; unsuitable for high-frequency sync rectification due to higher capacitance and thermal resistanceChoose only if 200V blocking and through-hole mounting are required; not drop-in for IRFR3707TRPBF layout

Compared with IRLR3707ZPBF and STP30NF20, IRFR3707TRPBF offers optimal balance of low on-resistance, moderate gate charge, and D-Pak thermal performance for 30V synchronous rectifiers-making it preferred over logic-level variants when 10V gate drive is available and over high-voltage parts when board space and switching frequency are critical.

Availability

IRFR3707TRPBF is available at Aetrix Electronics and suitable for telecom power supplies, industrial SMPS designs, server VRMs, and motor drive half-bridges requiring stable component supply and long-term production continuity.

Supply support for IRFR3707TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices and wide-bandgap technologies.

This part belongs to Infineon's legacy HEXFET® power MOSFET product line, engineered for high-efficiency, high-reliability switching in medium-voltage DC-DC conversion and motor control applications.

FAQ

Is IRFR3707TRPBF suitable for 3.3V gate drive?

No-its gate threshold voltage range is 1.0–3.0V, but full enhancement requires ≥4.5V for usable RDS(on). At 3.3V, RDS(on) exceeds 30mΩ, doubling conduction loss. For true 3.3V operation, use IRLR3707ZPBF instead, which guarantees 13mΩ at VGS = 4.5V.

What is the maximum recommended gate resistor value for 500kHz switching?

A 10Ω gate resistor is recommended for 500kHz operation with standard gate drivers. This balances switching speed (tr/tf ≈ 78ns/3.3ns) against ringing and EMI. Lower values (<5Ω) increase driver stress; higher values (>22Ω) extend td(off) beyond 11.8ns, raising switching loss disproportionately.

Can IRFR3707TRPBF replace IRFR3704 in an existing design?

Yes-both are D-Pak N-channel MOSFETs with identical pinout and footprint. IRFR3707TRPBF has lower RDS(on) (13mΩ vs. 20mΩ) and higher ID (61A vs. 49A), improving thermal margin. No layout change is needed, but gate drive strength should be verified due to higher Qg (19nC vs. 15nC).

Does this MOSFET require a heatsink when operating at 50A continuous?

No external heatsink is required if mounted on ≥1"² 2-oz copper pad with thermal vias. With RθJC = 1.73°C/W and PD ≈ 32.5W at 50A, junction temperature stays below 125°C ambient + (32.5 × 1.73) ≈ 181°C-within 175°C limit. However, derating to 45A is advised for 70°C ambient with no forced air.

IRFR3707TRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
61A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
13mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1990 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
87W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRFR3707TRPBF FAQ

1.How can I place an order for IRFR3707TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3707TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3707TRPBF reliable?

The price and inventory of IRFR3707TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3707TRPBF is usually 5 days.

3.What payment methods are accepted for IRFR3707TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3707TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

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IRFR3707TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3707TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3707TRPBF?

For technical support, including IRFR3707TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3707TRPBF requirements.

6.How does Aetrix verify that IRFR3707TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3707TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3707TRPBF meets industry standards.

7.What is the process for return or replacement of IRFR3707TRPBF?

All IRFR3707TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3707TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3707TRPBF part is unused and in its original packaging.

Return procedure for IRFR3707TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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