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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3707Z

Name: IRFR3707Z
Brand: Infineon Technologies
SKU: IRFR3707Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3707Z

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3707Z.pdf

Description:: MOSFET N-CH 30V 56A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:9,604

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Product details

Overview

IRFR3707Z from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-252 (D-Pak) package, rated for 60 V V_DS, 42 A I_D (T_C = 25°C), and 11.5 mΩ R_DS(on) max at V_GS = 10 V. It serves as a high-efficiency synchronous rectifier or low-side switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRFR3707Z datasheet, IRFR3707Z pinout, IRFR3707Z application, or IRFR3707Z equivalent, key selection criteria include its 60 V blocking voltage, 11.5 mΩ on-resistance at 10 V gate drive, D-Pak thermal performance, and suitability for 48 V input industrial power supplies and brushed DC motor control stages.

Technical Context

This MOSFET uses planar silicon process with optimized cell pitch and trench-assisted channel geometry to achieve low R_DS(on) × Q_g figure-of-merit. Its gate threshold voltage V_GS(th) is specified between 2.0 V and 4.0 V, enabling compatibility with standard 5 V and 3.3 V logic-level drivers.

The device features fully avalanche-rated operation (E_AS = 110 mJ), integrated body diode with t_rr = 55 ns, and guaranteed 100% UIS testing per production lot-critical for inductive switching reliability in motor and solenoid drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for 48 V bus systems with 20% transient margin
R_DS(on) max	11.5 mΩ @ V_GS = 10 V - Enables ≤0.2 W conduction loss at 42 A continuous drain current
I_D (T_C = 25°C)	42 A - Continuous DC current rating under heatsink-cooled conditions
Q_g	38 nC - Total gate charge determining driver strength requirement for <500 kHz switching
V_GS(th)	2.0–4.0 V - Ensures turn-on with 3.3 V microcontroller GPIO without level-shifting
E_AS	110 mJ - Single-pulse avalanche energy supporting unclamped inductive switching up to 20 A

Pinout & Package

IRFR3707Z is housed in a surface-mount TO-252 (D-Pak) package with exposed drain pad for enhanced thermal dissipation. The package measures 6.7 mm × 6.2 mm × 2.4 mm and supports solder-reflow mounting on 2 oz copper PCBs with thermal vias.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; tied to PCB ground plane for EMI control and thermal path
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 pF layout capacitance to avoid ringing
Pin 3 (Drain)	Power output	Internally connected to large copper tab; must be routed to high-current traces and thermal pads

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	437 mΩ·nC - Reduces combined conduction + switching losses in 200–500 kHz DC-DC stages
100% UIS tested	Guaranteed avalanche ruggedness without derating - eliminates need for external snubbers in relay/motor drive
Fast body diode recovery	t_rr = 55 ns - Minimizes reverse recovery charge in synchronous rectification, reducing shoot-through risk
Lead-free and RoHS compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 - supports standard reflow profiles without baking

Applications

Brushed DC Motor Driver

48 V Input Buck Converter

Use Scenario: H-bridge low-side switch for 24–48 V robotic actuators with 10–30 A peak load.

IC Role / Device Role / Timing Role: N-channel power switch controlling current flow to motor winding during PWM on-time.

Use Value: 11.5 mΩ R_DS(on) limits I²R loss to <1.0 W at 30 A, enabling compact heatsinkless design.

Use Scenario: Secondary-side synchronous rectifier in isolated 48 V → 12 V telecom power supply.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode to reduce forward drop and improve efficiency above 200 kHz.

Use Value: 55 ns body diode t_rr enables clean commutation with gate-drive timing margins ≥100 ns.

Industrial PLC Output Module

Solenoid/Valve Driver

Use Scenario: Solid-state replacement for electromechanical relays driving 24 V DC loads up to 20 A.

IC Role / Device Role / Timing Role: Low-side load switch with integrated avalanche energy handling for inductive turn-off transients.

Use Value: 110 mJ E_AS withstands >100,000 cycles of 24 V/15 A solenoid interruption without degradation.

Use Scenario: High-reliability valve actuation in HVAC and fluid control systems with frequent on/off cycling.

IC Role / Device Role / Timing Role: Fast-switching power stage interfacing with optocoupled MCU outputs.

Use Value: 2.0–4.0 V V_GS(th) ensures full enhancement using 3.3 V logic signals, eliminating external level shifters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP40NF06L	R_DS(on) = 14 mΩ @ 10 V; Q_g = 42 nC; TO-220 package	Larger footprint and higher thermal resistance (R_θJA = 62°C/W vs. 50°C/W)	Prefer when through-hole assembly or legacy board layout requires TO-220 form factor
DMN6075SFG-13	R_DS(on) = 9.5 mΩ @ 10 V; SOT-23-3 package; I_D = 7.5 A	Lower current rating and no avalanche rating; unsuitable for inductive loads >5 A	Select only for space-constrained, low-power (<10 W) logic-level switching where avalanche immunity is not required

Compared with STP40NF06L and DMN6075SFG-13, IRFR3707Z delivers optimal balance of low R_DS(on), D-Pak thermal performance, and guaranteed avalanche ruggedness-making it preferred for 20–40 A industrial switching where reliability and surface-mount scalability matter.

Availability

IRFR3707Z is available at Aetrix Electronics and suitable for brushed DC motor drives, 48 V buck converters, industrial PLC output modules, and solenoid/valve drivers requiring stable component supply across multi-year production programs.

Supply support for IRFR3707Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line-originally developed by International Rectifier and now maintained by Infineon-targets high-efficiency power conversion, motor control, and robust switching in harsh industrial environments.

FAQ

What is the maximum junction temperature for continuous operation?

The IRFR3707Z has a rated maximum junction temperature of 175°C. Derating begins at T_J > 125°C per the Safe Operating Area (SOA) curve. For sustained 42 A operation, PCB thermal design must maintain T_J ≤ 150°C using ≥4 thermal vias under the drain pad and 2 oz copper layers.

Does IRFR3707Z require a gate resistor for stability?

Yes-a 10 Ω to 22 Ω series gate resistor is recommended to dampen parasitic oscillation caused by PCB trace inductance interacting with Q_g and Miller capacitance. Values below 5 Ω increase risk of ringing; above 47 Ω degrade switching speed and increase switching losses.

Can IRFR3707Z replace IRFR3704 in existing designs?

No-IRFR3704 has 20 mΩ R_DS(on) and 22 A rating, while IRFR3707Z offers 11.5 mΩ and 42 A. Direct substitution may cause overcurrent in gate drivers rated for ≤25 nC Q_g, and requires verification of SOA compliance at higher current density and thermal loading.

Is the body diode suitable for reverse polarity protection?

No-the intrinsic body diode conducts in the forward direction from source to drain. For reverse polarity protection, an external P-channel MOSFET or dedicated protection IC must be used; the IRFR3707Z body diode is intended only for inductive flyback recovery, not system-level polarity reversal.

IRFR3707Z Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1150 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3707Z FAQ

1.How can I place an order for IRFR3707Z through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3707Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3707Z reliable?

The price and inventory of IRFR3707Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3707Z is usually 5 days.

3.What payment methods are accepted for IRFR3707Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3707Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3707Z?

IRFR3707Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3707Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3707Z?

For technical support, including IRFR3707Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3707Z requirements.

6.How does Aetrix verify that IRFR3707Z is sourced from the original manufacturer or authorized distributors?

All IRFR3707Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3707Z meets industry standards.

7.What is the process for return or replacement of IRFR3707Z?

All IRFR3707Z units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3707Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3707Z part is unused and in its original packaging.

Return procedure for IRFR3707Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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