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Infineon Technologies IRFR3707ZTRRPBF

Part No.:
IRFR3707ZTRRPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR3707ZTRRPBF.pdf
Description:
MOSFET N-CH 30V 56A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,185

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Product details

Overview

IRFR3707ZTRRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, rated for 60 V VDS, 48 A ID (TC = 100°C), and 11.5 mΩ RDS(on) @ VGS = 10 V. It serves as a main switch in DC-DC converters, motor drive half-bridges, and load switching circuits.

For engineers reviewing the IRFR3707ZTRRPBF datasheet, IRFR3707ZTRRPBF pinout, IRFR3707ZTRRPBF application, or IRFR3707ZTRRPBF equivalent, key selection criteria include its low RDS(on) at 10 V gate drive, fast turn-on/turn-off times (ton = 22 ns, toff = 32 ns), thermal resistance (RθJC = 1.4°C/W), and D-Pak surface-mount compatibility for high-current PCB layouts.

Technical Context

This Generation 3 HEXFET device uses planar stripe cell structure with optimized gate oxide thickness and source/drain doping profiles to achieve low conduction loss while maintaining rugged avalanche capability (EAS = 190 mJ). Its threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, enabling reliable turn-on with standard 5 V logic-level gate drivers.

The MOSFET features integrated body diode with soft recovery characteristics (Qrr = 55 nC, trr = 55 ns), reducing switching losses in synchronous rectification and freewheeling applications. Its SOA is defined up to 100°C case temperature with pulse width-limited safe operating area curves.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Maximum drain-to-source blocking voltage for 24 V and 48 V bus systems
RDS(on) @ VGS = 10 V11.5 mΩ - Enables ≤0.5 W conduction loss at 6.6 A RMS in continuous conduction mode
ID (TC = 100°C)48 A - Sustains high pulsed current in motor phase legs without derating below 100°C case temp
Qg35 nC - Gate charge supports <100 kHz PWM switching with <1 W gate driver dissipation
EAS190 mJ - Withstands single-pulse inductive energy without failure in unclamped inductive switching
RθJC1.4°C/W - Allows direct heatsinking to PCB copper pour or external heatsink for thermal management

Pinout & Package

Package: D-Pak (TO-252), surface-mount, single-ended leadframe with exposed drain pad for thermal and electrical connection.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalLow-side reference node; connects to ground or low-side switch node in half-bridge
Pin 2 (Gate)Control inputReceives 5–10 V logic-level signal; requires <35 nC charge for full enhancement
Pin 3 (Drain)Power outputHigh-current path to load/bus; electrically and thermally tied to exposed metal pad

Key Features

FeatureDesign Value
Ultra-low RDS(on) at 10 V11.5 mΩ enables high-efficiency operation in 48 V telecom and industrial SMPS
Fast switching speedton/toff = 22/32 ns reduces transition losses in >50 kHz hard-switched topologies
Rugged avalanche rating190 mJ EAS supports reliable operation in inductive load switching without snubbers
Enhanced body diode Qrr55 nC reverse recovery charge minimizes shoot-through risk in synchronous rectifiers

Applications

DC-DC Buck ConverterBrushless DC Motor Phase Switch

Use Scenario: High-efficiency 48 V to 12 V step-down converter in telecom power shelves.

IC Role / Device Role: High-side synchronous rectifier switch with 10 V gate drive.

Use Value: 11.5 mΩ RDS(on) limits conduction loss to <0.4 W at 6.5 A, improving full-load efficiency by ≥1.2% vs. 20 mΩ alternatives.

Use Scenario: Half-bridge leg in 3-phase BLDC driver for HVAC blowers.

IC Role / Device Role: Low-side switching element commutating motor phase current.

Use Value: 32 ns turn-off time enables clean PWM edge control at 20 kHz, reducing audible noise and torque ripple.

Hot-Swap Load SwitchIndustrial LED Driver

Use Scenario: Inrush-limited 24 V power rail enable for FPGA carrier board.

IC Role / Device Role: Main pass transistor with external gate resistor for controlled slew rate.

Use Value: 1.4°C/W RθJC allows direct copper pour heatsinking, sustaining 30 A inrush without thermal shutdown.

Use Scenario: Constant-current switch in 48 V string LED driver for street lighting.

IC Role / Device Role: PWM-controlled current sink modulating LED brightness.

Use Value: 190 mJ avalanche energy absorbs inductive kickback from boost inductor during duty-cycle transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP60NF06LRDS(on) = 14 mΩ @ 10 V; higher gate charge (Qg = 45 nC); TO-220 packageRequires through-hole mounting and larger heatsink footprint; slower switchingPreferred only where through-hole assembly or legacy footprint compatibility is mandatory
IXTP48N06TRDS(on) = 12.5 mΩ @ 10 V; lower Qg (28 nC); TO-220AB packageLacks D-Pak thermal pad; RθJC = 2.5°C/W limits power density in compact SMT designsAcceptable for lower-power (<30 A) or less thermally constrained layouts

Compared with STP60NF06L and IXTP48N06T, IRFR3707ZTRRPBF delivers superior power density via D-Pak thermal pad and lowest RDS(on), making it optimal for space-constrained, high-current SMT applications requiring <1.5°C/W thermal resistance.

Availability

IRFR3707ZTRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, hot-swap controllers, and industrial LED drivers requiring stable component supply and consistent parametric performance across production lots.

Supply support for IRFR3707ZTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors with rigorous qualification standards for industrial and automotive use.

This device belongs to the HEXFET® Generation 3 power MOSFET product line, engineered for high-efficiency, high-reliability switching in medium-voltage DC power conversion and motor control systems.

FAQ

Is IRFR3707ZTRRPBF logic-level compatible?

Yes - its VGS(th) range (2.0–4.0 V) and guaranteed RDS(on) at VGS = 4.5 V (22 mΩ max) confirm reliable enhancement with 5 V microcontroller outputs. However, full 11.5 mΩ performance requires 10 V gate drive.

What is the maximum continuous drain current at TC = 25°C?

At TC = 25°C, the absolute maximum continuous drain current is 79 A per the datasheet's DC rating. This assumes ideal heatsinking and is limited by package bondwire capacity, not silicon thermal limits.

Does IRFR3707ZTRRPBF have avalanche capability?

Yes - it is 100% tested for unclamped inductive switching (UIS) with EAS = 190 mJ at TJ = 25°C. This rating applies to single-pulse conditions and supports robustness in relay replacement and inductive load switching.

Can IRFR3707ZTRRPBF be used in parallel configurations?

Yes - its positive temperature coefficient for RDS(on) ensures inherent current sharing. For stable parallel operation, match gate resistors, minimize layout asymmetry, and ensure uniform PCB copper pour under each device's exposed drain pad.

IRFR3707ZTRRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
9.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1150 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
50W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRFR3707ZTRRPBF FAQ

1.How can I place an order for IRFR3707ZTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3707ZTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3707ZTRRPBF reliable?

The price and inventory of IRFR3707ZTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3707ZTRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR3707ZTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3707ZTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3707ZTRRPBF?

IRFR3707ZTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3707ZTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3707ZTRRPBF?

For technical support, including IRFR3707ZTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3707ZTRRPBF requirements.

6.How does Aetrix verify that IRFR3707ZTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3707ZTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3707ZTRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR3707ZTRRPBF?

All IRFR3707ZTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3707ZTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3707ZTRRPBF part is unused and in its original packaging.

Return procedure for IRFR3707ZTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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