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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3708

Name: IRFR3708
Brand: Infineon Technologies
SKU: IRFR3708
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3708

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3708.pdf

Description:: MOSFET N-CH 30V 61A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:9,096

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Product details

Overview

IRFR3708 from Infineon Technologies (formerly International Rectifier) is a 30V, 61A N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, optimized for high-frequency synchronous rectification in isolated DC-DC converters. It delivers 12.5mΩ R_DS(on) at V_GS = 10V, 14.0mΩ at 4.5V, and features 24nC total gate charge, 213mJ single-pulse avalanche energy, and ultra-low gate-drain charge (5.8nC) - enabling efficient operation in telecom and industrial SMPS.

For engineers reviewing the IRFR3708 datasheet, IRFR3708 pinout, IRFR3708 application, or IRFR3708 equivalent, key selection criteria include its 4.5V logic-level drive capability, 175°C maximum junction temperature, low C_iss/C_oss ratio (2417pF/707pF), robust body diode with 41ns reverse recovery time, and suitability for high-density, thermally constrained buck and flyback topologies.

Technical Context

This HEXFET device uses planar stripe DMOS technology to achieve low on-resistance while maintaining fast switching performance. Its gate threshold voltage (0.6–2.0V) and strong transconductance (49S typical) support stable turn-on under wide V_GS margins, and its fully characterized avalanche rating enables reliable unclamped inductive switching.

The MOSFET's thermal design is defined by R_θJC = 1.73°C/W and R_θJA = 50°C/W (PCB mount), with linear derating of 0.58W/°C above 70°C ambient. Its body diode exhibits V_SD = 0.88V at 31A and T_J = 25°C, supporting synchronous rectification without external Schottky replacement in many cases.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30V - Maximum blocking voltage for 24V-input telecom and industrial DC-DC stages
R_DS(on) @ 10V	12.5mΩ max - Enables ≤1.5W conduction loss at 61A continuous drain current
R_DS(on) @ 4.5V	14.0mΩ max - Ensures full enhancement with standard 5V logic or PWM controller outputs
Q_g	24nC - Low gate drive power requirement supports >500kHz switching in hard-switched converters
E_AS	213mJ - Withstands repetitive unclamped inductive energy in synchronous rectifier failure modes
trr / Q_rr	41ns / 64nC - Fast body diode recovery reduces cross-conduction losses during dead-time transitions
T_J max	+175°C - Supports operation in sealed enclosures or high-ambient industrial environments

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal requiring <200nA leakage at ±12V; driven via low-impedance path to minimize switching losses
Pin 2 (D)	Drain	High-current output node connected to PCB copper pour for heat dissipation and low-inductance return path
Pin 3 (S)	Source	Reference node for gate drive; ties to power ground plane and serves as return for body diode conduction

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V	14.0mΩ max ensures full enhancement with 5V microcontroller or PWM IC outputs
Low Q_gd/Q_g ratio	5.8nC/24nC = 0.24 minimizes Miller-induced switching delay and improves dV/dt immunity
Characterized avalanche capability	213mJ E_AS allows safe operation in non-clamped inductive circuits without snubbers
Lead-free and RoHS-compliant	IRFR3708PbF marking confirms Pb-free plating and halogen-free packaging per JEDEC J-STD-020
Optimized for synchronous rectification	Body diode V_SD = 0.88V @ 31A enables >92% efficiency in 12V→3.3V/50A LLC converters

Applications

Telecom DC-DC Converters

Industrial SMPS

Use Scenario: 48V-to-12V isolated forward converter in base station power supply with 300kHz switching frequency.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode on secondary side to reduce conduction loss and improve thermal margin.

Use Value: Achieves 1.2% efficiency gain over 40V Schottky at 40A load, lowering heatsink size by 35%.

Use Scenario: 24V input, 5V/60A output buck converter for PLC I/O module with tight thermal envelope.

IC Role / Device Role / Timing Role: High-side switch in multiphase topology with gate drive synchronized to PWM controller.

Use Value: 12.5mΩ R_DS(on) limits conduction loss to 1.8W at full load, enabling natural convection cooling.

Server VRMs

Motor Drive Half-Bridge

Use Scenario: 12V input, 1.2V/120A CPU voltage regulator using 3-phase interleaved buck with doublers.

IC Role / Device Role / Timing Role: Low-side switch with fast turn-off (3.7ns fall time) to minimize shoot-through risk during phase overlap.

Use Value: 24nC Q_g enables clean 1MHz switching with 1Ω gate resistor, reducing gate drive loss by 40% vs. older 40nC parts.

Use Scenario: 24V BLDC motor driver half-bridge stage in HVAC fan control with integrated bootstrap gate drive.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET switched via charge pump; body diode conducts freewheeling current during low-side on-time.

Use Value: 41ns trr and 64nC Q_rr suppress voltage spikes during commutation, eliminating need for external RC snubber.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N3LLH6	30V, 110A, 3.3mΩ @ 10V, PowerFLAT 5x6 package, higher current rating but larger footprint	Better suited for parallel configurations or higher-current (>80A) designs where board space permits	Select when peak current exceeds 61A or thermal budget allows lower R_DS(on) at cost of larger layout area
DMT3006LPS-13	30V, 60A, 5.2mΩ @ 4.5V, PowerDI 5060 package, superior 4.5V R_DS(on) but lower avalanche rating (120mJ)	Preferred for 3.3V/5V logic-driven systems where avalanche stress is minimal	Choose for ultra-low gate drive voltage applications where E_AS margin is not critical

Compared with STL110N3LLH6 and DMT3006LPS-13, IRFR3708 offers balanced trade-offs: moderate R_DS(on), proven avalanche ruggedness, D-Pak compatibility with legacy layouts, and broad availability - making it ideal for cost-sensitive, medium-power industrial and telecom designs where reliability under transient stress is essential.

Availability

IRFR3708 is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial SMPS, and server VRMs requiring stable component supply and long-term production continuity.

Supply support for IRFR3708 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap power devices.

The IRFR3708 belongs to Infineon's legacy HEXFET® power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in isolated and non-isolated DC-DC conversion stages.

FAQ

Is IRFR3708 suitable for 3.3V gate drive?

No - its gate threshold voltage range is 0.6–2.0V, but full enhancement requires ≥4.5V. At 3.3V, R_DS(on) rises to ~30mΩ (max), increasing conduction loss significantly. Use only with 4.5V or higher gate drive for rated performance.

What is the maximum recommended PCB copper area for thermal performance?

Per AN-994, a 1"×1" FR-4 PCB copper pour (2 oz) under the drain tab achieves R_θJA = 50°C/W. Larger areas yield diminishing returns; doubling to 2"×2" improves R_θJA by only ~12%. Thermal vias to inner ground planes are strongly recommended.

Does IRFR3708 have built-in ESD protection?

No - it lacks integrated gate protection diodes. Gate-source voltage must be limited to ±12V, and handling requires standard MOSFET ESD precautions (grounded wrist strap, conductive foam). External Zener clamping is advised in high-noise environments.

Can IRFR3708 replace IRFR3707 in existing designs?

Yes - both are D-Pak 30V N-channel MOSFETs with identical pinout. IRFR3708 has 12.5mΩ R_DS(on) vs. 14.0mΩ for IRFR3707, offering lower conduction loss. No layout or drive circuit changes are needed, and all absolute maximum ratings match.

IRFR3708 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 61A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.8V, 10V

Rds On (Max) @ Id, Vgs:: 12.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2417 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 87W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3708 FAQ

1.How can I place an order for IRFR3708 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3708 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3708 reliable?

The price and inventory of IRFR3708 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3708 is usually 5 days.

3.What payment methods are accepted for IRFR3708?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3708 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3708?

IRFR3708 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3708 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3708?

For technical support, including IRFR3708 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3708 requirements.

6.How does Aetrix verify that IRFR3708 is sourced from the original manufacturer or authorized distributors?

All IRFR3708 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3708 meets industry standards.

7.What is the process for return or replacement of IRFR3708?

All IRFR3708 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3708, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3708 part is unused and in its original packaging.

Return procedure for IRFR3708:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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