Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3708PBF

Name: IRFR3708PBF
Brand: Infineon Technologies
SKU: IRFR3708PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFR3708PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3708PBF.pdf

Description:: MOSFET N-CH 30V 61A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,118

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFR3708PBF from Infineon Technologies (formerly International Rectifier) is a 30V, 61A N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, featuring 12.5mΩ R_DS(on) at V_GS = 10V and ultra-low gate charge (24nC), optimized for high-frequency synchronous rectification in isolated DC-DC converters for telecom and industrial power supplies.

For engineers reviewing the IRFR3708PBF datasheet, IRFR3708PBF pinout, IRFR3708PBF application, or IRFR3708PBF equivalent, key selection criteria include its 4.5V logic-level gate drive capability, 213mJ single-pulse avalanche energy rating, 1.73°C/W junction-to-case thermal resistance, and body diode reverse recovery performance (t_rr = 41–65ns) under hard-switching conditions.

Technical Context

This HEXFET device uses planar stripe cell structure with optimized gate oxide thickness to achieve low R_DS(on) while maintaining robust avalanche ruggedness. Its gate threshold voltage (0.6–2.0V) enables reliable turn-on with 3.3V/4.5V microcontroller outputs, and its Crss of 52pF minimizes Miller-induced switching oscillation in high-dV/dt environments.

The integrated body diode exhibits low forward voltage (0.88V typ. at 31A, 25°C) and controlled reverse recovery (Q_rr = 64–105nC), supporting efficient synchronous rectification without external Schottky replacement in 300kHz–1MHz isolated flyback and forward converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30V - Maximum blocking voltage for 24V-input DC-DC stages with 20% margin
R_DS(on) max @ 10V	12.5mΩ - Enables ≤1.5W conduction loss at 61A continuous drain current
Q_g	24nC - Reduces gate driver power demand and switching transition time in high-frequency operation
E_AS	213mJ - Supports unclamped inductive switching stress without failure in synchronous rectifier FET position
t_rr	41–65ns - Limits reverse recovery losses and EMI generation during hard commutation
R_θJC	1.73°C/W - Allows direct heatsinking via PCB copper pour or clip-mount for thermal management
V_GS(th)	0.6–2.0V - Ensures full enhancement with standard 3.3V logic-level drivers

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; thermally enhanced design requiring minimum 1"² FR-4 copper area per IPC-2221B guidelines.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel MOSFET	Common return path for load current; connects to ground or low-side reference node
Pin 2 (Gate)	Control electrode	Receives PWM signal; requires <24nC charge for full enhancement; sensitive to ESD
Pin 3 (Drain)	High-side current output terminal	Exposed metal pad - electrically and thermally connected to drain; must be routed to high-voltage node

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V	14mΩ max - Enables use as synchronous rectifier with 3.3V/5V gate drivers without external level shifters
Lead-free (PbF) construction	RoHS-compliant finish - meets IPC-J-STD-020D reflow profile for lead-free assembly
Fully characterized avalanche	Rated for 213mJ single-pulse energy - eliminates need for external snubbers in inductive load switching
Low Crss	52pF - Suppresses Miller-induced false turn-on during high dV/dt transitions in half-bridge topologies
Optimized body diode	t_rr = 41–65ns, Q_rr = 64–105nC - Reduces switching loss and voltage overshoot in synchronous rectification

Applications

Telecom DC-DC Converters

Industrial SMPS

Use Scenario: 48V-to-12V isolated forward converter in base station power shelf.

IC Role / Device Role / Timing Role: Synchronous rectifier FET on secondary side, replacing Schottky diode to reduce conduction loss.

Use Value: Achieves >95% efficiency at 20A load by cutting diode forward drop loss; R_DS(on) of 12.5mΩ yields 5.0W loss vs. 12W typical for 40V Schottky.

Use Scenario: 24V input, 5V/30A output active clamp forward converter in PLC power module.

IC Role / Device Role / Timing Role: Low-side switch in primary-side active clamp circuit with 500kHz switching frequency.

Use Value: 24nC Q_g enables fast turn-on/off with minimal gate driver dissipation; Crss of 52pF prevents shoot-through in high dV/dt clamp node.

Server VRM

Motor Drive Half-Bridge

Use Scenario: 12V input, 1.2V/120A multiphase buck converter for CPU core supply.

IC Role / Device Role / Timing Role: High-side switch in dual-phase interleaved topology operating at 1MHz.

Use Value: 1.73°C/W R_θJC allows direct thermal coupling to heatsink; 61A ID rating supports peak phase current derating to 1.5× RMS.

Use Scenario: 24V H-bridge driver for BLDC motor control in automated guided vehicle (AGV) motion system.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg, driven by isolated gate driver with 4.5V output.

Use Value: V_GS(th) range (0.6–2.0V) ensures clean turn-on with 4.5V logic; body diode t_rr < 65ns limits freewheeling loss during PWM dead-time.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3708PBF	Same die in TO-220AB package; higher R_θJA (62°C/W vs. 50°C/W), no exposed drain pad	Suitable for through-hole prototyping or lower-power designs where thermal budget allows larger footprint	Select when board space permits TO-220 mounting and heatsink integration is preferred over PCB copper thermal spreading
STP30NF20	200V V_DS, 30A I_D, 40mΩ R_DS(on) - higher voltage rating but significantly higher on-resistance and gate charge	Applicable only in higher-bus-voltage systems (>60V); not suitable for 30V-class synchronous rectification	Choose only if system requires >100V blocking capability; avoid for 24–48V telecom/industrial SMPS due to 3× higher conduction loss

Compared with IRLR3708PBF and STP30NF20, IRFR3708PBF delivers optimal balance of low R_DS(on), low Q_g, and D-Pak thermal performance for high-density, high-efficiency 30V synchronous rectifiers - making it the preferred choice for space-constrained telecom and industrial DC-DC modules.

Availability

IRFR3708PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial SMPS, and server VRMs requiring stable component supply across multi-year production cycles.

Supply support for IRFR3708PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® power MOSFET product line was originally developed by International Rectifier (acquired by Infineon in 2015) to deliver high-current, low-R_DS(on) switching performance for high-efficiency power conversion in telecom, computing, and industrial equipment.

FAQ

Is IRFR3708PBF suitable for 3.3V gate drive?

Yes. With a gate threshold voltage range of 0.6–2.0V and guaranteed R_DS(on) of 14.0mΩ at V_GS = 4.5V, IRFR3708PBF fully enhances using standard 3.3V logic outputs. However, for lowest R_DS(on) and highest efficiency, 10V gate drive is recommended where system architecture permits.

What is the maximum continuous drain current at 70°C case temperature?

The datasheet specifies 51A continuous drain current at T_A = 70°C with proper PCB copper area. When mounted on a 1"² FR-4 board, thermal derating follows the linear factor of 0.58W/°C above 25°C ambient, limiting practical continuous current to approximately 45–48A depending on heatsinking.

Does IRFR3708PBF have avalanche capability, and how is it rated?

Yes. It is fully characterized for unclamped inductive switching with a rated single-pulse avalanche energy (E_AS) of 213mJ at T_J = 25°C. This rating is validated per JEDEC JESD24-11 and enables reliable operation in circuits with inductive loads without external snubbers.

Can IRFR3708PBF replace IRFR3707 in an existing design?

Yes, with verification. IRFR3707 has identical D-Pak package and pinout, but higher R_DS(on) (14mΩ vs. 12.5mΩ) and slightly higher Q_g (26nC vs. 24nC). The substitution improves conduction loss by ~12% and reduces gate drive power, provided layout and thermal margins accommodate the minor parameter shifts.

IRFR3708PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 61A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.8V, 10V

Rds On (Max) @ Id, Vgs:: 12.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2417 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 87W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3708PBF FAQ

1.How can I place an order for IRFR3708PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3708PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3708PBF reliable?

The price and inventory of IRFR3708PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3708PBF is usually 5 days.

3.What payment methods are accepted for IRFR3708PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3708PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3708PBF?

IRFR3708PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3708PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3708PBF?

For technical support, including IRFR3708PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3708PBF requirements.

6.How does Aetrix verify that IRFR3708PBF is sourced from the original manufacturer or authorized distributors?

All IRFR3708PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3708PBF meets industry standards.

7.What is the process for return or replacement of IRFR3708PBF?

All IRFR3708PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3708PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3708PBF part is unused and in its original packaging.

Return procedure for IRFR3708PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…