Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3708TR

Name: IRFR3708TR
Brand: Infineon Technologies
SKU: IRFR3708TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFR3708TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3708TR.pdf

Description:: MOSFET N-CH 30V 61A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,337

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFR3708TR from Infineon Technologies (formerly International Rectifier) is a 30V, 61A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, optimized for high-frequency synchronous rectification in isolated DC-DC converters. It delivers 12.5mΩ R_DS(on) at V_GS = 10V and 14.0mΩ at 4.5V, with ultra-low gate charge (Q_g = 24nC), enabling efficient operation in telecom and industrial SMPS.

For engineers reviewing the IRFR3708TR datasheet, IRFR3708TR pinout, IRFR3708TR application, or IRFR3708TR equivalent, key selection criteria include its 30V V_DS, 12.5mΩ on-resistance at 10V drive, 24nC total gate charge, 213mJ single-pulse avalanche energy, and D-Pak thermal performance (R_θJC = 1.73°C/W).

Technical Context

This MOSFET employs planar HEXFET technology with fully characterized avalanche capability and low reverse transfer capacitance (C_rss = 52pF), supporting fast switching in hard-switched and resonant topologies. Its gate threshold voltage (V_GS(th) = 0.6–2.0V) enables robust 4.5V logic-level drive compatibility.

The device integrates a low-V_F body diode (0.88V typ. at 31A, 25°C) with 41ns reverse recovery time and 64nC Q_rr, reducing switching losses in synchronous rectifier configurations where bidirectional conduction and controlled commutation are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30V - Maximum drain-source blocking voltage for 24V-input telecom and industrial DC-DC stages
R_DS(on) @ V_GS=10V	12.5mΩ max - Enables <1W conduction loss at 61A continuous current in PCB-mount applications
Q_g	24nC - Reduces gate drive power and enables >500kHz switching in high-efficiency SMPS designs
E_AS	213mJ - Supports unclamped inductive switching stress without failure in synchronous rectifier flyback or forward converters
R_θJC	1.73°C/W - Allows direct heatsinking via D-Pak exposed drain pad for thermal management in compact power modules
V_GS(th)	0.6–2.0V - Ensures reliable turn-on with standard 3.3V/5V controller outputs and noise margin against false triggering
Q_rr	64–96nC - Limits diode recovery loss and EMI generation during hard commutation in synchronous rectification

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Receives PWM signal; low input capacitance (C_iss = 2417pF) minimizes driver loading
Drain (D)	High-side switch node	Exposed metal tab - electrically connected to drain; must be isolated from heatsink unless referenced to same potential
Source (S)	Return path / reference	Common node for gate drive return and current sensing; ties to low-side switch or ground in synchronous rectifier layout

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V	14.0mΩ max - supports direct drive from 5V microcontrollers and PWM controllers without level-shifting
Low gate-to-drain charge	Q_gd = 5.8nC - reduces Miller-induced switching delay and improves dV/dt immunity in high-side configurations
Characterized avalanche rating	I_AR = 62A, E_AS = 213mJ - eliminates need for external snubbers in clamp or flyback circuits with known inductive energy
Lead-free and RoHS-compliant	IRFR3708TR marked "PbF" - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for standard reflow assembly

Applications

Telecom DC-DC Converters

Industrial SMPS

Use Scenario: 48V-to-12V isolated half-bridge converter in base station power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier on secondary side, replacing Schottky diodes to reduce conduction loss and improve efficiency above 92%.

Use Value: 12.5mΩ R_DS(on) cuts rectifier loss by >40% vs. 40V/60A Schottky, directly improving thermal margin at full load.

Use Scenario: 24V-input forward converter powering PLC I/O modules in factory automation.

IC Role / Device Role / Timing Role: Low-side switch in active clamp circuit, handling repetitive 30V, 50A pulsed currents.

Use Value: 244A pulsed drain rating and 213mJ avalanche energy enable reliable clamp energy recycling without derating.

Server VRMs

Motor Drive Half-Bridge Legs

Use Scenario: 12V-to-1.2V multiphase buck converter supplying CPU core voltage.

IC Role / Device Role / Timing Role: High-side switch in each phase leg, operating at 300–600kHz with 4.5V gate drive.

Use Value: 24nC Q_g and 52pF C_rss minimize switching loss and cross-conduction risk during dead-time transitions.

Use Scenario: 24V BLDC motor driver in HVAC fan control with integrated protection.

IC Role / Device Role / Timing Role: Low-side FET in half-bridge output stage, conducting continuous 31A with body diode freewheeling.

Use Value: 41ns t_rr and 64nC Q_rr suppress voltage spikes during PWM commutation, reducing EMI filter size.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3708PbF	Same die, but in TO-220AB package - higher R_θJA (62°C/W vs. 50°C/W), no exposed drain pad	Suitable for through-hole prototyping or lower-power heatsinked designs; not drop-in for D-Pak PCB layouts	Select when mechanical mounting constraints favor through-hole or when board space allows larger footprint
STP30NF20	200V V_DS, 30A ID, 40mΩ R_DS(on) - higher voltage rating but significantly higher on-resistance and gate charge	Applicable in higher-bus-voltage industrial inverters, not suitable for 30V synchronous rectification	Choose only if system requires >100V blocking; avoid for 24–48V SMPS due to 3× higher conduction loss

Compared with IRFR3708TR, the IRLR3708PbF offers identical electrical specs but inferior thermal performance in surface-mount assemblies, while the STP30NF20 trades voltage headroom for substantially reduced efficiency in low-voltage, high-current roles - making IRFR3708TR optimal for compact, high-frequency 30V power stages.

Availability

IRFR3708TR is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial SMPS, and server VRMs requiring stable component supply, consistent lead-free compliance, and verified thermal performance in D-Pak form factor.

Supply support for IRFR3708TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with deep expertise in silicon-based power MOSFET innovation.

The IRFR/U3708 series belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in isolated and non-isolated DC-DC converters across telecom, computing, and industrial infrastructure.

FAQ

What is the maximum continuous drain current for IRFR3708TR at 70°C case temperature?

The maximum continuous drain current is 51A at T_C = 70°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from the 61A rating at 25°C, based on the device's 0.58W/°C linear derating factor and 61W power dissipation limit at 70°C.

Can IRFR3708TR be driven directly by a 3.3V microcontroller GPIO?

No - while its gate threshold voltage starts at 0.6V, reliable enhancement requires ≥4.5V to achieve specified R_DS(on) (14.0mΩ max). A 3.3V drive yields significantly higher on-resistance (>30mΩ), increasing conduction loss. A gate driver or level shifter is required for full performance.

Does IRFR3708TR have built-in ESD protection on the gate?

No - the device lacks integrated gate protection diodes. Its gate oxide is rated for ±12V absolute maximum V_GS; exceeding this risks permanent damage. External 12V Zener clamps or series resistors are recommended in noisy environments or manual handling scenarios.

Is the exposed drain pad on the D-Pak package electrically connected to the drain terminal?

Yes - the large copper tab on the underside of the D-Pak package is internally bonded to the drain. It serves as both the primary thermal path and the drain electrical connection. When mounted on a PCB, it must be routed to the drain net and thermally connected to a copper pour, with appropriate isolation if heatsinking to chassis ground.

IRFR3708TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 61A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.8V, 10V

Rds On (Max) @ Id, Vgs:: 12.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2417 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 87W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3708TR FAQ

1.How can I place an order for IRFR3708TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3708TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3708TR reliable?

The price and inventory of IRFR3708TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3708TR is usually 5 days.

3.What payment methods are accepted for IRFR3708TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3708TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3708TR?

IRFR3708TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3708TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3708TR?

For technical support, including IRFR3708TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3708TR requirements.

6.How does Aetrix verify that IRFR3708TR is sourced from the original manufacturer or authorized distributors?

All IRFR3708TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3708TR meets industry standards.

7.What is the process for return or replacement of IRFR3708TR?

All IRFR3708TR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3708TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3708TR part is unused and in its original packaging.

Return procedure for IRFR3708TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…