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Infineon Technologies IRFR3708TRL

Part No.:
IRFR3708TRL
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR3708TRL.pdf
Description:
MOSFET N-CH 30V 61A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,733

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Product details

Overview

IRFR3708TRL from Infineon Technologies (formerly International Rectifier) is a 30V, 61A N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, optimized for high-frequency synchronous rectification in isolated DC-DC converters. It delivers 12.5 mΩ RDS(on) at VGS = 10 V, 14.0 mΩ at 4.5 V, and supports 244 A pulsed drain current - enabling efficient 48 V–12 V telecom and industrial point-of-load conversion.

For engineers reviewing the IRFR3708TRL datasheet, IRFR3708TRL pinout, IRFR3708TRL application, or IRFR3708TRL equivalent, key selection criteria include its low gate charge (24 nC total), fast switching (td(off) = 17.6 ns), robust avalanche rating (213 mJ), and guaranteed operation from –55 °C to +175 °C junction temperature.

Technical Context

This HEXFET device uses planar vertical DMOS structure with optimized cell pitch and trench-free die design to minimize RDS(on) × Qg figure-of-merit. Its gate threshold voltage (0.6–2.0 V) enables reliable turn-on with 3.3 V and 4.5 V logic-level drivers, while ultra-low Ciss (2417 pF) and Crss (52 pF) reduce Miller-induced switching losses in hard-switched topologies.

The integrated body diode exhibits fast reverse recovery (trr = 41–65 ns, Qrr = 64–105 nC) and low forward voltage (0.88 V at 31 A, 25 °C), making it suitable for synchronous rectifier duty where diode conduction loss and shoot-through immunity are critical.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Maximum blocking voltage compatible with 24 V/36 V input rails and transient clamping in telecom SMPS
RDS(on) @ 10 V12.5 mΩ max - Enables <1.5 W conduction loss at 61 A continuous, reducing heatsink requirements
RDS(on) @ 4.5 V14.0 mΩ max - Ensures full enhancement with standard 5 V microcontroller GPIO or PWM driver outputs
Qg24 nC - Low gate drive energy reduces driver IC power dissipation and enables >1 MHz switching
EAS213 mJ - Withstands unclamped inductive switching events without failure in flyback or LLC resonant converters
TJ Range–55 °C to +175 °C - Supports operation in sealed industrial enclosures and under-hood automotive auxiliary supplies
Coss707 pF - Predictable output capacitance simplifies snubber design and soft-switching timing calculations

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for thermal performance; thermally enhanced layout requires ≥1"² copper pour on PCB layer per AN-994.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminal (body diode anode)Low-impedance return path for load current; connects directly to ground plane for EMI control
Pin 2 (Gate)Control electrodeHigh-impedance input requiring <24 nC charge for full enhancement; sensitive to ESD and ringing
Pin 3 (Drain)Main current path (body diode cathode)Exposed metal pad - must be soldered to large copper area for thermal transfer (RθJC = 1.73 °C/W)

Key Features

FeatureDesign Value
Ultra-low RDS(on) at 4.5 V14.0 mΩ max - eliminates need for gate boosters in 5 V control systems
Fully characterized avalanche capability213 mJ single-pulse rating - allows safe operation in non-zero-voltage-switched topologies without external clamps
Fast body diode recoverytrr = 41 ns (25 °C), Qrr = 64 nC - minimizes cross-conduction loss during synchronous rectifier dead-time
Lead-free and RoHS-compliantIRFR3708PbF marking - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) for standard reflow

Applications

Telecom DC-DC ConvertersIndustrial PLC Power Supplies

Use Scenario: 48 V input to 12 V/3.3 V isolated buck-derived converter in 19" rack-mounted telecom shelf.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side of active-clamp forward or LLC resonant topology.

Use Value: Replaces Schottky diode to cut conduction loss by >40%, enabling >95% efficiency at full load with no forced air cooling.

Use Scenario: 24 V backup supply for programmable logic controller I/O modules operating in ambient up to 70 °C.

IC Role / Device Role / Timing Role: Primary-side switch in 200 kHz flyback regulator powering isolated analog sensor interfaces.

Use Value: Avalanche ruggedness ensures reliability during inductive load dump transients; 175 °C TJ rating avoids derating in sealed enclosures.

Server VRM High-Side SwitchAutomotive ADAS Camera Power

Use Scenario: High-side switch in multiphase buck converter delivering 1.2 V @ 120 A to CPU core voltage rail.

IC Role / Device Role / Timing Role: Upper FET in interleaved phase-leg with gate drive synchronized to PWM controller.

Use Value: Low Qg/RDS(on) product reduces switching + conduction loss trade-off, improving dynamic voltage droop response.

Use Scenario: 12 V to 5 V/3.3 V step-down converter powering image sensor and ISP in rear-view camera module.

IC Role / Device Role / Timing Role: Main switch in automotive-grade 500 kHz buck regulator meeting AEC-Q101 stress test requirements.

Use Value: Qualified to –40 °C to +125 °C case temperature; low RDS(on) maintains efficiency across cold-cranking voltage dips.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLR3708PbFSame die, but in smaller D2PAK-3L (TO-252-3) package with identical RDS(on), Qg, and SOANo exposed drain pad; lower thermal performance (RθJA = 110 °C/W vs. 50 °C/W for IRFR3708TRL)Select when board space is constrained and thermal budget allows higher junction rise
STP36NF06L60 V rating, 14 mΩ RDS(on) @ 10 V, higher Qg (45 nC), slower td(off) (45 ns)Better overvoltage margin but higher switching loss; not rated for >150 °C TJChoose only if system requires >30 V blocking or legacy footprint compatibility

Compared with IRLR3708PbF and STP36NF06L, IRFR3708TRL offers superior thermal resistance via its exposed-drain D-Pak, faster switching due to lower Qg, and extended high-temperature operation - making it optimal for compact, high-efficiency telecom and industrial SMPS designs where thermal headroom is limited.

Availability

IRFR3708TRL is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial PLC power supplies, and automotive ADAS camera power modules requiring stable component supply and long-term lifecycle support.

Supply support for IRFR3708TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap solutions.

The IRFR/U3708 series belongs to Infineon's HEXFET® power MOSFET product line, engineered specifically for high-frequency, high-efficiency switching applications in server, telecom, and industrial power conversion where low RDS(on), fast switching, and ruggedness are essential.

FAQ

What is the maximum continuous drain current for IRFR3708TRL at 70°C case temperature?

The maximum continuous drain current is 51 A at TC = 70 °C with VGS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from the 61 A rating at 25 °C, using the linear derating factor of 0.58 W/°C and RθJC = 1.73 °C/W to maintain TJ ≤ 175 °C.

Does IRFR3708TRL support logic-level gate drive?

Yes - with VGS(th) ranging from 0.6 V to 2.0 V and RDS(on) = 14.0 mΩ max at VGS = 4.5 V, IRFR3708TRL fully enhances using standard 3.3 V or 5 V logic outputs. Gate drive must supply ≥24 nC and handle peak currents >2 A to achieve specified tr/tf.

How is the body diode performance characterized in IRFR3708TRL?

The integrated body diode has VSD = 0.88 V (typ.) at 31 A and 25 °C, with trr = 41 ns and Qrr = 64 nC under IF = 31 A, VR = 20 V, and di/dt = 100 A/µs. These values are fully characterized across temperature and support synchronous rectifier use without external diodes.

Is IRFR3708TRL suitable for avalanche-rated applications?

Yes - it is fully specified for unclamped inductive switching with EAS = 213 mJ (single pulse, TJ = 25 °C) and IAR = 62 A. The datasheet provides Fig. 15c showing EAS vs. ID, confirming ruggedness across operating current range without external snubbers.

IRFR3708TRL Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
61A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
2.8V, 10V
Rds On (Max) @ Id, Vgs:
12.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
24 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
2417 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
87W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRFR3708TRL FAQ

1.How can I place an order for IRFR3708TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3708TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3708TRL reliable?

The price and inventory of IRFR3708TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3708TRL is usually 5 days.

3.What payment methods are accepted for IRFR3708TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3708TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3708TRL?

IRFR3708TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3708TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3708TRL?

For technical support, including IRFR3708TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3708TRL requirements.

6.How does Aetrix verify that IRFR3708TRL is sourced from the original manufacturer or authorized distributors?

All IRFR3708TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3708TRL meets industry standards.

7.What is the process for return or replacement of IRFR3708TRL?

All IRFR3708TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3708TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3708TRL part is unused and in its original packaging.

Return procedure for IRFR3708TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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