Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3708TRPBF

Name: IRFR3708TRPBF
Brand: Infineon Technologies
SKU: IRFR3708TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFR3708TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3708TRPBF.pdf

Description:: MOSFET N-CH 30V 61A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,217

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFR3708TRPBF from Infineon Technologies (formerly International Rectifier) is a 30V, 61A N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, optimized for high-frequency synchronous rectification in isolated DC-DC converters. It delivers 12.5mΩ R_DS(on) at V_GS = 10V, 14.0mΩ at 4.5V, and features ultra-low gate charge (Q_g = 24nC), fast switching (t_f = 3.7ns), and robust avalanche capability (E_AS = 213mJ).

For engineers reviewing the IRFR3708TRPBF datasheet, IRFR3708TRPBF pinout, IRFR3708TRPBF application, or IRFR3708TRPBF equivalent, key selection criteria include low R_DS(on) at 4.5V for 5V-gate drive systems, tight Q_gd/Q_g ratio for reduced Miller-induced turn-off delay, and validated SOA performance up to 175°C junction temperature in telecom and industrial SMPS designs.

Technical Context

This HEXFET device uses planar vertical DMOS structure with optimized cell pitch and trench-assisted gate geometry to achieve simultaneous low conduction loss and fast switching. Its gate threshold voltage (0.6–2.0V) enables compatibility with both 3.3V and 5V logic-level drivers, while the 52pF Crss ensures minimal Miller feedback during hard-switching transitions.

The integrated body diode exhibits low V_SD (0.88V typ. @ 31A, 25°C) and controlled reverse recovery (Q_rr = 64–96nC), making it suitable for synchronous rectification where diode conduction and commutation losses dominate efficiency. Thermal design leverages low R_θJC (1.73°C/W) for direct heatsink mounting via the exposed drain pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30V - Maximum blocking voltage for 24V-input telecom and industrial isolated DC-DC converters
R_DS(on) @ 10V	12.5mΩ max - Enables <1W conduction loss at 61A continuous drain current
R_DS(on) @ 4.5V	14.0mΩ max - Supports direct drive from 5V PWM controllers without level-shifting
Q_g	24nC - Reduces gate driver power requirement and switching transition time
E_AS	213mJ - Withstands unclamped inductive energy during fault conditions in buck or flyback topologies
R_θJC	1.73°C/W - Allows efficient thermal path to heatsink when mounted on PCB with exposed drain pad
t_f	3.7ns - Minimizes turn-off overlap loss in >500kHz switching applications

Pinout & Package

IRFR3708TRPBF is housed in a surface-mount D-Pak (TO-252) package with an exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard D-Pak configuration: Gate (G), Drain (D), Source (S), with Drain electrically connected to the metal tab.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives PWM signal; requires ≤12V absolute max rating and low-impedance drive due to 24nC total gate charge
D	Drain (high-side switch node)	Connected to exposed metal tab; must be routed to primary-side or secondary-side high-voltage rail per topology
S	Source (return path)	Common reference for gate drive and current sensing; tied to output ground or floating return in synchronous rectifier configurations

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V	14.0mΩ max enables use with 5V microcontroller GPIO or dedicated 5V gate drivers without boost circuitry
Low Q_gd/Q_g ratio	5.8/24nC = 24% - Reduces Miller plateau duration and improves controllability during hard switching
Enhanced body diode performance	V_SD = 0.88V @ 31A, Q_rr = 64nC - Low forward drop and predictable recovery reduce synchronous rectifier losses
Lead-free and RoHS-compliant	IRFR3708TRPBF suffix denotes Pb-free termination and halogen-free packaging per JEDEC J-STD-020

Applications

Telecom DC-DC Converters

Industrial SMPS

Use Scenario: 48V-to-12V isolated half-bridge converter in base station power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier on secondary side, replacing Schottky diodes to improve efficiency above 92% at full load.

Use Value: 14.0mΩ R_DS(on) at 4.5V allows direct drive from 5V auxiliary supply, eliminating gate driver IC and reducing BOM count.

Use Scenario: 24V-input buck converter powering PLC I/O modules with strict thermal constraints.

IC Role / Device Role / Timing Role: High-side main switch operating at 300kHz with 100ns dead-time margin.

Use Value: 3.7ns fall time and 1.73°C/W R_θJC enable stable operation at 100°C case temperature without forced air cooling.

Server VRMs

Motor Drive Half-Bridge Legs

Use Scenario: 12V-to-1.2V point-of-load converter supplying CPU core voltage.

IC Role / Device Role / Timing Role: Low-side switch in multiphase buck stage, conducting high ripple current with minimal conduction loss.

Use Value: 12.5mΩ R_DS(on) at 10V reduces I²R loss by 40% vs. comparable 20mΩ devices, lowering thermal stress on PCB copper.

Use Scenario: 24V H-bridge driver for BLDC fan control in HVAC systems.

IC Role / Device Role / Timing Role: Low-side switch with integrated body diode conducting freewheeling current during PWM off-time.

Use Value: Controlled Q_rr (64–96nC) and low V_SD minimize diode conduction loss and EMI during commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3708PbF	Same die, but in TO-220AB package with through-hole mounting and higher R_θJA (62°C/W vs. 50°C/W)	Preferred for prototyping or low-volume industrial controls requiring manual soldering and heatsink clamping	Select when mechanical robustness and serviceability outweigh PCB space constraints and thermal performance needs.
STP30NF20	200V V_DS, 30A ID, 40mΩ R_DS(on) @ 10V - higher voltage rating but significantly higher on-resistance and slower switching	Suitable for 100–200V flyback or PFC stages where 30V rating is insufficient	Choose only if system requires >30V blocking capability; not recommended for 24–48V synchronous rectification due to 3× higher conduction loss.

Compared with IRLR3708PbF and STP30NF20, IRFR3708TRPBF offers optimal trade-off of low R_DS(on), fast switching, and compact D-Pak footprint for high-density, high-efficiency 30V-class SMPS - especially where board space, thermal resistance, and gate drive simplicity are critical.

Availability

IRFR3708TRPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial SMPS, and server VRMs requiring stable component supply across multi-year production cycles.

Supply support for IRFR3708TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors for industrial, automotive, and computing markets.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-frequency switching power conversion where low gate charge, tight R_DS(on) tolerance, and rugged avalanche performance are essential.

FAQ

What is the maximum continuous drain current at 70°C case temperature?

The IRFR3708TRPBF supports 51A continuous drain current at T_A = 70°C with proper PCB copper area and thermal vias. This derating reflects the 0.58W/°C linear derating factor applied to its 87W maximum power dissipation at 25°C ambient, ensuring safe operation within SOA limits under realistic board-level thermal conditions.

Can this MOSFET be driven directly from a 3.3V microcontroller GPIO?

No - while the gate threshold voltage starts at 0.6V, the R_DS(on) rises sharply below 4.5V (30mΩ at 2.8V). Driving from 3.3V results in excessive conduction loss and thermal runaway risk. A dedicated 5V or 10V gate driver is required to achieve specified 12.5–14.0mΩ performance and ensure reliable turn-on.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes - the body diode is fully characterized with trr = 41–65ns and Qrr = 64–105nC across temperature. Its soft recovery behavior and low V_SD make it viable for synchronous rectification in isolated DC-DC converters, provided layout minimizes parasitic inductance to avoid voltage overshoot during diode commutation.

What is the recommended PCB footprint and thermal relief for this D-Pak device?

Per IR application note AN-994, use a minimum 1" square copper pad (FR-4) connected to internal ground planes via ≥6 thermal vias (0.3mm diameter, 0.8mm spacing). The exposed drain pad must be soldered directly to this pad; inadequate copper area increases R_θJA beyond 50°C/W and risks thermal failure above 60W dissipation.

IRFR3708TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 61A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.8V, 10V

Rds On (Max) @ Id, Vgs:: 12.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2417 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 87W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3708TRPBF FAQ

1.How can I place an order for IRFR3708TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3708TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3708TRPBF reliable?

The price and inventory of IRFR3708TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3708TRPBF is usually 5 days.

3.What payment methods are accepted for IRFR3708TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3708TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3708TRPBF?

IRFR3708TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3708TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3708TRPBF?

For technical support, including IRFR3708TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3708TRPBF requirements.

6.How does Aetrix verify that IRFR3708TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3708TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3708TRPBF meets industry standards.

7.What is the process for return or replacement of IRFR3708TRPBF?

All IRFR3708TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3708TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3708TRPBF part is unused and in its original packaging.

Return procedure for IRFR3708TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…