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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3708TRRPBF

Name: IRFR3708TRRPBF
Brand: Infineon Technologies
SKU: IRFR3708TRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3708TRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3708TRRPBF.pdf

Description:: MOSFET N-CH 30V 61A DPAK

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Product details

Overview

IRFR3708TRRPBF from Infineon Technologies (formerly International Rectifier) is a 30V, 61A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators for telecom and industrial power supplies. It delivers 12.5mΩ R_DS(on) at V_GS = 10V, 14.0mΩ at 4.5V, and features ultra-low gate charge (Q_g = 24nC) and fast switching (t_f = 3.7ns).

For engineers reviewing the IRFR3708TRRPBF datasheet, IRFR3708TRRPBF pinout, IRFR3708TRRPBF application, or IRFR3708TRRPBF equivalent, key selection criteria include its 30V V_DS, 12.5mΩ on-resistance at 10V drive, 24nC total gate charge, 213mJ single-pulse avalanche energy, and D-Pak thermal performance (R_θJC = 1.73°C/W).

Technical Context

This MOSFET employs planar silicon HEXFET technology with fully characterized avalanche capability and low reverse transfer capacitance (C_rss = 52pF), enabling robust operation in hard-switched and resonant topologies. Its gate threshold voltage (V_GS(th) = 0.6–2.0V) supports both 3.3V and 4.5V logic-level drive.

The device integrates a fast, low-V_SD body diode (t_rr = 41–65ns, Q_rr = 64–105nC) suitable for synchronous rectification without external Schottky replacement. Junction temperature range spans –55°C to +175°C, supporting high-reliability industrial and telecom deployments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30V - Maximum drain-source blocking voltage; sets upper limit for input/output rail in 24V systems and telecom 48V intermediate bus converters.
R_DS(on) @ 10V	12.5mΩ max - Enables <1W conduction loss at 61A DC, critical for high-efficiency 12V/5V point-of-load stages.
Q_g	24nC - Low gate charge reduces driver power and enables >1MHz switching in LLC and phase-shifted full-bridge designs.
E_AS	213mJ - Confirmed single-pulse avalanche energy rating ensures ruggedness during inductive turn-off transients.
t_f	3.7ns - Fast fall time minimizes switching overlap loss in synchronous rectifiers and half-bridge legs.
R_θJC	1.73°C/W - Enables direct heatsinking via PCB copper pour or clip-mounting; supports >60W continuous dissipation with modest thermal interface.

Pinout & Package

IRFR3708TRRPBF is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection. The package measures 6.73 × 6.22 × 2.39 mm and is RoHS-compliant and lead-free (PbF).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or output return; carries full load current and must be routed with low-inductance copper.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET control node; requires <24nC charge delivery and EMI-filtered routing to prevent false turn-on.
Pin 3 (Drain)	Power output (D)	Exposed metal pad - electrically and thermally connected to drain; must be soldered to large PCB copper area for thermal management and low-inductance high-current path.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V	14.0mΩ max - Enables direct drive from 5V microcontrollers or PWM controllers without level-shifting, reducing BOM count.
Fully characterized avalanche	213mJ E_AS - Eliminates need for external snubbers in flyback or forward converters operating near breakdown limits.
Low C_rss (Miller)	52pF - Reduces gate-drive coupling during dV/dt transitions, improving noise immunity and enabling stable high-speed switching.
Fast body diode recovery	t_rr = 41ns (25°C) - Minimizes reverse recovery loss in synchronous rectification, directly improving efficiency over discrete Schottky solutions.

Applications

Telecom DC-DC Converters

Industrial SMPS

Use Scenario: 48V-to-12V isolated half-bridge converter in base station power modules.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side full-wave configuration, replacing Schottky diodes.

Use Value: 12.5mΩ R_DS(on) cuts conduction loss by >40% vs. 40V Schottky, raising efficiency from 92% to 95.3% at 30A load.

Use Scenario: 24V input, 3.3V/20A output buck converter for PLC I/O modules.

IC Role / Device Role / Timing Role: High-side switch in integrated power stage with integrated gate driver.

Use Value: 24nC Q_g allows clean 500kHz switching with minimal driver heating, sustaining 94% efficiency across 10–100% load.

Server VRMs

Motor Drive Half-Bridge

Use Scenario: Multiphase CPU core voltage regulator using paralleled phases.

IC Role / Device Role / Timing Role: Low-side FET in 3-phase buck stage, driven by dedicated gate driver IC.

Use Value: 1.73°C/W R_θJC enables direct thermal coupling to heatsink, maintaining T_J < 110°C at 61A peak per phase.

Use Scenario: 24V BLDC motor inverter half-bridge leg for HVAC fan control.

IC Role / Device Role / Timing Role: Low-side switch handling PWM commutation at 20kHz with regenerative braking.

Use Value: 213mJ E_AS withstands inductive kickback during rapid PWM off-times, eliminating external clamping diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3708PbF	Dual-die variant in smaller D-Pak (TO-252-2L); identical V_DS, R_DS(on), and Q_g, but rated for 58A ID (T_A=25°C).	Limited to lower-power 24V systems due to reduced thermal mass and lower P_D (75W vs. 87W).	Select when board space is constrained and peak current ≤58A; verify PCB copper area matches lower thermal capacity.
STP36NF3LL	30V N-channel in TO-220FP; R_DS(on) = 11mΩ @ 10V, Q_g = 32nC, R_θJC = 2.5°C/W.	Through-hole mounting only; higher gate charge increases driver losses above 300kHz.	Choose for legacy through-hole designs or where mechanical robustness outweighs switching speed requirements.

Compared with IRFR3708TRRPBF, IRLR3708PbF trades thermal margin for footprint reduction, while STP36NF3LL offers slightly lower R_DS(on) but sacrifices high-frequency performance and surface-mount compatibility-making IRFR3708TRRPBF optimal for compact, high-efficiency, high-frequency SMPS.

Availability

IRFR3708TRRPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial SMPS, and server VRMs requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for IRFR3708TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors, focusing on energy-efficient, reliable, and scalable power solutions for industrial, automotive, and communications markets.

The IRFR3708TRRPBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency switching power conversion in space-constrained, thermally demanding applications such as telecom rectifiers and distributed power architectures.

FAQ

Is IRFR3708TRRPBF suitable for 3.3V gate drive?

Yes - its gate threshold voltage (V_GS(th)) ranges from 0.6V to 2.0V, and it achieves R_DS(on) = 14.0mΩ max at V_GS = 4.5V. While not fully enhanced at 3.3V, it delivers usable conduction (R_DS(on) ≈ 22–25mΩ) and is commonly used with 3.3V logic drivers in low-duty-cycle or thermally relaxed applications. For guaranteed 12.5mΩ performance, 5V or 10V drive is required.

What is the maximum recommended PCB copper area for thermal management?

Per IRF Application Note AN-994, a minimum 1.0" × 1.0" (25.4mm × 25.4mm) FR-4 copper pour (2 oz/ft²) connected to the exposed drain pad is recommended. This achieves the specified R_θJA = 50°C/W. Larger or multilayer thermal vias (≥12× 0.3mm diameter) further reduce junction temperature - typical design targets keep T_J ≤ 135°C at 61A continuous with 25°C ambient.

Does IRFR3708TRRPBF have built-in ESD protection?

No - this MOSFET lacks integrated gate protection diodes. Its gate oxide is sensitive to electrostatic discharge, with absolute maximum V_GS = ±12V. Handling requires standard ESD precautions (grounded wrist strap, conductive foam), and PCB layout must include external Zener clamps (e.g., 12V TVS) between gate and source if exposed to noisy environments or hot-plug conditions.

Can IRFR3708TRRPBF replace IRFR3707 in existing designs?

Yes - both share identical D-Pak packaging, pinout, and voltage rating (30V), but IRFR3708TRRPBF has lower R_DS(on) (12.5mΩ vs. 14.0mΩ at 10V) and higher ID (61A vs. 58A). Gate charge is nearly identical (24nC vs. 25nC). Replacement improves conduction loss by ~12% and thermal margin, with no layout or drive circuit changes required.

IRFR3708TRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 61A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.8V, 10V

Rds On (Max) @ Id, Vgs:: 12.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2417 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 87W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3708TRRPBF FAQ

1.How can I place an order for IRFR3708TRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3708TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3708TRRPBF reliable?

The price and inventory of IRFR3708TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3708TRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR3708TRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3708TRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3708TRRPBF?

IRFR3708TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3708TRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3708TRRPBF?

For technical support, including IRFR3708TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3708TRRPBF requirements.

6.How does Aetrix verify that IRFR3708TRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3708TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3708TRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR3708TRRPBF?

All IRFR3708TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3708TRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3708TRRPBF part is unused and in its original packaging.

Return procedure for IRFR3708TRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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