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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3709ZPBF

Name: IRFR3709ZPBF
Brand: Infineon Technologies
SKU: IRFR3709ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3709ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3709ZPBF.pdf

Description:: MOSFET N-CH 30V 86A DPAK

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Product details

Overview

IRFR3709ZPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, rated for 30 V V_DS, 6.5 mΩ R_DS(on) at V_GS = 4.5 V, and 17 nC total gate charge. It delivers high-efficiency synchronous rectification in high-frequency DC-DC converters for server CPU VRMs and telecom power supplies.

For engineers reviewing the IRFR3709ZPBF datasheet, IRFR3709ZPBF pinout, IRFR3709ZPBF application, or IRFR3709ZPBF equivalent, key selection criteria include its ultra-low R_DS(on) at 4.5 V drive, fully characterized avalanche capability, low Q_gd/Q_gs1 ratio for C_dv/dt immunity, and optimized body diode recovery (Q_rr = 25–37 nC, t_rr = 29–44 ns).

Technical Context

This MOSFET employs a trench-gated silicon process to achieve sub-7 mΩ on-resistance with 17 nC total gate charge at 4.5 V, enabling efficient operation in 300–1000 kHz synchronous buck topologies. Its gate threshold voltage (1.35–2.25 V) and negative temperature coefficient of V_GS(th) (−5.6 mV/°C) support stable parallel operation under thermal stress.

The device integrates a robust intrinsic body diode with 86 A continuous source current rating and controlled reverse recovery (Q_rr = 37 nC max), minimizing shoot-through risk in hard-switched synchronous FET positions. Avalanche energy rating (E_AS = 450 mJ @ T_J = 25°C) supports unclamped inductive switching reliability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V and 24 V input DC-DC stages
R_DS(on) @ 4.5 V	6.5 mΩ max - Enables <1 W conduction loss at 12 A RMS in VRM output stage
Q_g	17 nC typ - Low gate drive power requirement for high-frequency PWM control
Q_gd/Q_gs1 ratio	~1.2 - Minimizes C_dv/dt-induced turn-on risk in high-dV/dt switching nodes
t_rr	29–44 ns - Fast body diode recovery reduces cross-conduction losses in synchronous rectification
R_θJC	1.9 °C/W - Enables >60 W power dissipation with moderate heatsinking in D-Pak footprint

Pinout & Package

IRFR3709ZPBF uses the industry-standard D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical performance. The three-terminal configuration supports high-current PCB routing and low-inductance layout.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to exposed copper pad; must be soldered to large PCB copper area for thermal management
Source	Reference node for gate drive and current sensing	Low-impedance return path; used for Kelvin-source sensing in precision current monitoring
Gate	Control terminal for channel modulation	High-impedance input requiring <17 nC charge for full enhancement; sensitive to ESD and dV/dt coupling

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	6.5 mΩ enables high-efficiency operation directly from 5 V or 3.3 V gate drivers without level-shifting
Fully characterized avalanche	450 mJ single-pulse E_AS rating verified per JEDEC JESD24-1, supporting robustness in transient overloads
Optimized body diode	Q_rr = 37 nC max and t_rr = 44 ns enable reliable synchronous rectification without external Schottky assist
Low gate-to-drain charge ratio	Q_gd/Q_gs1 ≈ 1.2 reduces susceptibility to Miller-induced turn-on in high-dV/dt environments

Applications

Server CPU Voltage Regulator Modules

Telecom 48 V Input DC-DC Converters

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.8 V @ up to 200 A to modern x86 processors.

IC Role / Device Role / Timing Role: Synchronous FET in low-side position; switched at 300–600 kHz with precise dead-time control.

Use Value: 6.5 mΩ R_DS(on) at 4.5 V reduces conduction loss by >35% vs. legacy 10 mΩ devices, improving full-load efficiency by 1.2%.

Use Scenario: Isolated forward or LLC converter with synchronous rectification on secondary side for 12 V or 5 V outputs.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier; driven by transformer-coupled or active clamp timing signals.

Use Value: Fast 29 ns t_rr and low Q_rr minimize reverse recovery losses during zero-voltage switching transitions.

Industrial Motor Drive Gate Drivers

Automotive ADAS Power Supplies

Use Scenario: Half-bridge high-side/low-side driver stage powering 24 V BLDC motor control logic and sensors.

IC Role / Device Role / Timing Role: Low-side switch in compact half-bridge module; operated with 100 ns dead time.

Use Value: 1.9 °C/W R_θJC allows 45 W dissipation with minimal heatsink, enabling fanless enclosure design.

Use Scenario: Compact 12 V to 3.3 V/1.8 V point-of-load regulator for radar processor and camera SoCs.

IC Role / Device Role / Timing Role: Primary-side switch in monolithic buck controller IC companion; driven by integrated gate driver.

Use Value: Lead-free (Pb-free) construction and −55°C to +175°C T_STG/T_J rating meet AEC-Q101 stress test requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3709ZPBF	Same die, I-Pak (TO-220AB) package; higher R_θJA (110 °C/W vs. 50 °C/W)	Better suited for through-hole prototyping or lower-frequency designs where thermal mass compensates for lower efficiency	Select when mechanical mounting constraints require leaded package or when board-level heatsinking is impractical
SiR872DP-T1-GE3	60 V rating, 5.2 mΩ R_DS(on) @ 4.5 V, 22 nC Q_g; trench-Si MOSFET with enhanced SOA	Higher voltage margin supports 48 V industrial inputs; higher Q_g increases gate drive loss above 500 kHz	Choose for 36–60 V input systems needing extended avalanche margin and tighter R_DS(on) tolerance

Compared with IRFR3709ZPBF, IRLR3709ZPBF trades surface-mount compatibility for easier thermal testing, while SiR872DP offers higher voltage headroom and lower on-resistance but requires higher gate drive energy-making IRFR3709ZPBF optimal for space-constrained, high-frequency 30 V synchronous rectifiers.

Availability

IRFR3709ZPBF is available at Aetrix Electronics and suitable for server CPU VRMs, telecom DC-DC converters, and automotive ADAS power supplies requiring stable component supply and long-term production continuity.

Supply support for IRFR3709ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, communications, and industrial power systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR3709ZPBF supports 30 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value is derated linearly from 86 A at 25°C using the 0.53 W/°C derating factor, ensuring safe operation under sustained thermal load in compact power modules.

Does this MOSFET require a gate resistor for stability in high-frequency switching?

Yes-a 5–10 Ω gate resistor is recommended to dampen ringing caused by PCB trace inductance and gate capacitance interaction. The device's low Q_gd (5.7 nC) and C_iss (2330 pF) make it susceptible to oscillation without proper gate drive impedance control, especially above 500 kHz.

Can IRFR3709ZPBF be used in parallel configurations?

Yes-its negative temperature coefficient of R_DS(on) and matched V_GS(th) (1.35–2.25 V) enable stable current sharing across paralleled units. Layout symmetry, Kelvin source connections, and individual gate resistors are required to ensure balanced dynamic turn-on and thermal distribution.

Is the body diode suitable for reverse recovery in hard-switched topologies?

Yes-the body diode is fully characterized with t_rr = 29–44 ns and Q_rr = 25–37 nC at I_F = 12 A, making it viable for hard-switched synchronous rectification. However, for ZVS or resonant topologies, pairing with a fast external Schottky may further reduce recovery loss.

IRFR3709ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 86A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2330 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3709ZPBF FAQ

1.How can I place an order for IRFR3709ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3709ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3709ZPBF reliable?

The price and inventory of IRFR3709ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3709ZPBF is usually 5 days.

3.What payment methods are accepted for IRFR3709ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3709ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3709ZPBF?

IRFR3709ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3709ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3709ZPBF?

For technical support, including IRFR3709ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3709ZPBF requirements.

6.How does Aetrix verify that IRFR3709ZPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3709ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3709ZPBF meets industry standards.

7.What is the process for return or replacement of IRFR3709ZPBF?

All IRFR3709ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3709ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3709ZPBF part is unused and in its original packaging.

Return procedure for IRFR3709ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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