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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3709ZTRLPBF

Name: IRFR3709ZTRLPBF
Brand: Infineon Technologies
SKU: IRFR3709ZTRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3709ZTRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3709ZTRLPBF.pdf

Description:: MOSFET N-CH 30V 86A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR3709ZTRLPBF from Infineon Technologies is a 30V N-channel Trench MOSFET in D-Pak (TO-252) package, optimized for high-frequency synchronous buck converters. It delivers 6.5 mΩ R_DS(on) at V_GS = 4.5 V, 17 nC total gate charge, and 100 A pulsed drain current, enabling efficient power conversion in CPU VRMs and telecom DC-DC stages.

For engineers reviewing the IRFR3709ZTRLPBF datasheet, IRFR3709ZTRLPBF pinout, IRFR3709ZTRLPBF application, or IRFR3709ZTRLPBF equivalent, key selection criteria include low-voltage gate drive compatibility (4.5 V), ultra-low Q_gd/Q_gs1 ratio for C_dv/dt immunity, body diode reverse recovery charge (Q_rr = 25–37 nC), and junction-to-case thermal resistance (1.9 °C/W).

Technical Context

This HEXFET device uses Infineon's TrenchMOS process to achieve sub-7 mΩ on-resistance with 4.5 V gate drive, supporting direct interfacing with low-voltage PWM controllers. Its fully characterized avalanche rating (E_AS = 450 mJ at T_J = 25°C) and 175°C maximum junction temperature support robust operation under transient overloads.

The MOSFET features a low reverse transfer capacitance (C_rss = 230 pF) and fast switching times (t_f = 3.9 ns, t_d(off) = 15 ns), minimizing switching losses in >500 kHz converter topologies. Its body diode exhibits 29–44 ns reverse recovery time and 1.0 V forward voltage at 12 A, critical for synchronous rectification efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports input rails up to 24 V with margin for transients in point-of-load converters.
R_DS(on) max @ 4.5 V	6.5 mΩ - Enables <1 W conduction loss at 40 A RMS in high-current CPU core supplies.
Q_g	17 nC - Determines gate driver current requirement; enables fast turn-on with ≤1 A peak drive.
Q_gd	5.7 nC - Critical for C_dv/dt immunity; low Q_gd/Q_gs1 ratio suppresses false turn-on in high-dV/dt nodes.
T_J max	175°C - Allows sustained operation under high ambient and power density conditions in sealed enclosures.
R_θJC	1.9 °C/W - Enables direct heatsinking to PCB copper or external metal, supporting >60 W continuous dissipation.
Q_rr	25–37 nC - Quantifies body diode recovery loss transferred to control FET; impacts light-load efficiency.

Pinout & Package

IRFR3709ZTRLPBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical connection. The package supports reflow soldering and provides low-inductance source connections via dual-source pins.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (dual internal leads)	Low-inductance return path; connects directly to power ground plane for EMI control.
Pin 2 (Gate)	Control electrode	High-impedance input requiring <100 nA leakage; sensitive to ESD and layout parasitics.
Pin 3 (Drain)	Power output / heat sink interface	Exposed copper pad electrically and thermally tied to drain; must be soldered to large copper area.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	Enables direct drive from 5 V or 3.3 V controllers without level-shifting, reducing BOM count.
Fully characterized avalanche energy	E_AS = 450 mJ ensures survivability during unclamped inductive switching events in synchronous rectifiers.
Low Q_gd/Q_gs1 ratio	Minimizes Miller-induced turn-on risk in high-dV/dt synchronous FET positions, improving system reliability.
Optimized body diode recovery	Q_rr = 25–37 nC and t_rr = 29–44 ns reduce cross-conduction losses and stress on control FET.
Lead-free and RoHS-compliant	Meets IPC-J-STD-020D reflow profile requirements; compatible with standard Pb-free assembly processes.

Applications

Server CPU Voltage Regulators

Telecom Isolated DC-DC Converters

Use Scenario: High-current, multi-phase buck converters delivering 1–2 V at up to 200 A to modern x86 and ARM processors.

IC Role / Device Role / Timing Role: Synchronous rectifier FET operating at 300–1000 kHz with 4.5 V gate drive from multiphase controller.

Use Value: 6.5 mΩ R_DS(on) and 1.9 °C/W R_θJC enable >95% efficiency at full load while maintaining <85°C case temperature.

Use Scenario: Secondary-side synchronous rectification in 48 V input telecom PSUs with 12 V or 5 V outputs.

IC Role / Device Role / Timing Role: Low-side switch in forward or LLC resonant converters, driven by transformer-coupled or active clamp gate signals.

Use Value: Low Q_rr and fast t_f (3.9 ns) minimize dead-time losses and improve light-load regulation accuracy.

Industrial Motor Drive Gate Drivers

Automotive ADAS Power Supplies

Use Scenario: Half-bridge high-side/low-side drivers for 24 V BLDC motor control modules in factory automation.

IC Role / Device Role / Timing Role: Low-side switching element in discrete gate driver stage, handling 30–50 A peak currents.

Use Value: 175°C T_J rating and 100 A I_DM support intermittent overload conditions without derating.

Use Scenario: Point-of-load regulators powering radar sensors, camera modules, and domain controllers in ADAS ECUs.

IC Role / Device Role / Timing Role: Primary synchronous FET in compact 300 kHz buck converter with strict EMI and thermal constraints.

Use Value: D-Pak package allows dense layout; low C_iss (2330 pF) and C_rss (230 pF) reduce gate drive power and noise coupling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3709PbF	Same die, but in smaller I-Pak (TO-251) package; R_θJA = 110 °C/W vs. 50 °C/W for D-Pak.	Limited to lower-power applications (<25 W) due to higher thermal resistance; unsuitable for >60 A designs.	Select only when board space is constrained and power dissipation remains below 15 W.
STL325N3LLH6	30 V, 5.5 mΩ @ 4.5 V, but Q_g = 22 nC and Q_rr = 48 nC - higher switching and recovery losses.	Better conduction loss but worse light-load efficiency; requires stronger gate driver.	Prefer for fixed-frequency, high-duty-cycle applications where conduction dominates; avoid in high-frequency sync rectification.

Compared with IRLR3709PbF and STL325N3LLH6, IRFR3709ZTRLPBF offers the optimal balance of low gate charge (17 nC), low Q_rr, and superior thermal performance in D-Pak - making it the preferred choice for high-frequency, high-current synchronous rectification where both efficiency and reliability are critical.

Availability

IRFR3709ZTRLPBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom isolated DC-DC converters, and industrial motor drive gate drivers requiring stable component supply and long-term production continuity.

Supply support for IRFR3709ZTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This MOSFET belongs to Infineon's HEXFET® Trench series, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, telecom, and industrial power systems.

FAQ

Is IRFR3709ZTRLPBF suitable for 3.3 V gate drive?

No - its gate threshold voltage (V_GS(th)) ranges from 1.35 V to 2.25 V, but full enhancement requires ≥4.5 V to achieve rated R_DS(on). At 3.3 V, R_DS(on) increases significantly (>15 mΩ), raising conduction losses. It is designed for 4.5 V or 5 V logic-level drive.

What is the maximum continuous drain current at 100°C case temperature?

At T_C = 100°C, the maximum continuous drain current is 30 A (derated from 86 A at 25°C per the linear derating curve). This value assumes proper PCB copper area for thermal conduction and accounts for R_DS(on) increase with temperature.

Does IRFR3709ZTRLPBF have integrated ESD protection?

No - it lacks on-chip ESD protection diodes. Gate oxide is rated for ±20 V absolute maximum V_GS; therefore, external gate resistors (≥10 Ω) and TVS clamps are recommended in production layouts to prevent damage during handling or system transients.

Can this MOSFET replace IRFR3708 in existing designs?

Yes - IRFR3708 (30 V, 10 mΩ @ 10 V) is superseded by IRFR3709ZTRLPBF (30 V, 6.5 mΩ @ 4.5 V). The newer part offers lower on-resistance at lower gate voltage, improved gate charge, and enhanced avalanche ruggedness - provided layout accommodates identical D-Pak footprint and thermal relief.

IRFR3709ZTRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 86A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2330 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3709ZTRLPBF FAQ

1.How can I place an order for IRFR3709ZTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3709ZTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3709ZTRLPBF reliable?

The price and inventory of IRFR3709ZTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3709ZTRLPBF is usually 5 days.

3.What payment methods are accepted for IRFR3709ZTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3709ZTRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3709ZTRLPBF?

IRFR3709ZTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3709ZTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3709ZTRLPBF?

For technical support, including IRFR3709ZTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3709ZTRLPBF requirements.

6.How does Aetrix verify that IRFR3709ZTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3709ZTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3709ZTRLPBF meets industry standards.

7.What is the process for return or replacement of IRFR3709ZTRLPBF?

All IRFR3709ZTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3709ZTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3709ZTRLPBF part is unused and in its original packaging.

Return procedure for IRFR3709ZTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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