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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3709ZTRPBF

Name: IRFR3709ZTRPBF
Brand: Infineon Technologies
SKU: IRFR3709ZTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3709ZTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3709ZTRPBF.pdf

Description:: MOSFET N-CH 30V 86A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR3709ZTRPBF from Infineon Technologies is a 30V, 6.5mΩ N-channel Trench MOSFET in I-Pak (TO-251) package, optimized for high-frequency synchronous buck converters and isolated DC-DC applications. It delivers 86A continuous drain current at 25°C, features ultra-low gate charge (17nC), low R_DS(on) at 4.5V V_GS, and fully characterized avalanche capability - enabling efficient power conversion in CPU VRMs and telecom rectifiers.

For engineers reviewing the IRFR3709ZTRPBF datasheet, IRFR3709ZTRPBF pinout, IRFR3709ZTRPBF application, or IRFR3709ZTRPBF equivalent, key selection criteria include its 6.5mΩ R_DS(on) @ 4.5V, 17nC total gate charge, 30V V_DSS, body diode reverse recovery charge (Q_rr = 25–37nC), and thermal resistance R_θJC = 1.9°C/W - all critical for high-efficiency, high-density power stage design.

Technical Context

This HEXFET Power MOSFET employs Trench technology to achieve low on-resistance with minimal gate drive voltage sensitivity. Its gate threshold voltage (1.35–2.25V) and negative temperature coefficient of V_GS(th) (−5.6mV/°C) support stable parallel operation and thermal runaway mitigation.

The device integrates a robust intrinsic body diode with t_rr = 29–44ns and Q_rr = 25–37nC, enabling reliable synchronous rectification without external Schottky supplementation. Its clamped inductive avalanche rating (E_AS = 450mJ @ T_J = 25°C) ensures ruggedness under transient overloads in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - Maximum blocking voltage compatible with 24V input rails and transient margin in telecom/industrial DC-DC stages.
R_DS(on) max @ 4.5V	6.5mΩ - Enables <1W conduction loss at 40A RMS in high-current CPU core power delivery.
Q_g typ	17nC - Reduces gate drive power and enables fast switching with standard PWM controllers (e.g., ISL63xx, MP2315).
I_D @ 25°C	86A - Supports high-current single-phase buck stages without paralleling in compact VRM designs.
R_θJC	1.9°C/W - Allows direct heatsinking to PCB copper or small metal clips, simplifying thermal management in space-constrained modules.
Q_rr	25–37nC - Minimizes shoot-through risk and crossover loss during dead-time transitions in synchronous rectifiers.
V_GS(th)	1.35–2.25V - Ensures turn-on compatibility with 3.3V and 5V logic-level gate drivers without level-shifting.

Pinout & Package

IRFR3709ZTRPBF uses the I-Pak (TO-251) surface-mount package with exposed drain pad for thermal and electrical performance. The three-terminal configuration supports low-inductance PCB layout in high-di/dt power stages.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path output / heat sink interface	Internally connected to exposed copper pad - must be soldered to large PCB copper pour for thermal dissipation and low EMI loop inductance.
Source (S)	Reference node for gate drive and current sensing	Provides Kelvin connection point for accurate high-side current monitoring; ties directly to power ground plane.
Gate (G)	Control terminal for channel modulation	High-impedance input requiring <17nC charge for full enhancement; sensitive to dv/dt coupling - requires local gate resistor (5–10Ω) and short trace routing.

Key Features

Feature	Design Value
Ultra-low R_DS(on) @ 4.5V	6.5mΩ enables >95% efficiency in 12V→1.2V/60A buck converters at 500kHz switching frequency.
Fully characterized avalanche energy	E_AS = 450mJ (T_J = 25°C) allows safe operation under unclamped inductive switching without snubbers in flyback or LLC resonant circuits.
Low Q_gd/Q_gs1 ratio	Q_gd = 5.7nC, Q_gs1 = 4.7nC - minimizes C_dv/dt induced turn-on risk in synchronous FET position with high dV/dt nodes.
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) - suitable for standard reflow profiles without baking.

Applications

Server CPU Voltage Regulator Modules (VRMs)

Telecom 48V-to-12V Isolated DC-DC Converters

Use Scenario: High-current, multi-phase buck converter supplying 1.0–1.8V at up to 300A to modern x86 processors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier FET operating at 300–1000kHz with precise dead-time control.

Use Value: 6.5mΩ R_DS(on) and 17nC Q_g reduce conduction + switching losses by ~22% vs. legacy 10mΩ MOSFETs, improving VRM power density.

Use Scenario: Secondary-side synchronous rectifier in 48V input, 12V/50A isolated forward or active clamp forward converter.

IC Role / Device Role / Timing Role: Fast-recovery body diode and low-R_DS(on) switch replacing Schottky diodes in telecom PSUs.

Use Value: Q_rr = 25–37nC and t_rr = 29–44ns eliminate reverse recovery spikes, reducing EMI filter size and improving light-load efficiency.

Industrial Motor Drive Gate Drivers

Automotive ADAS Power Supplies

Use Scenario: Half-bridge high-side driver stage in 24V BLDC motor inverters for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: High-speed switching element with robust avalanche rating for inductive load commutation.

Use Value: Clamped inductive avalanche rating (E_AS = 450mJ) eliminates need for external clamping diodes, reducing BOM count and board area.

Use Scenario: Compact 12V-to-3.3V/2A power supply for radar sensor modules and camera ECUs in ADAS systems.

IC Role / Device Role / Timing Role: Primary switch in high-frequency (1MHz) buck regulator meeting AEC-Q101 stress requirements.

Use Value: R_θJC = 1.9°C/W enables operation at 100°C ambient without forced air, supporting sealed enclosure designs per ISO 16750-4.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3709ZPBF	Same die, D-Pak (TO-252) package; R_θJA = 50°C/W (PCB mount) vs. 110°C/W for I-Pak; no exposed drain pad.	Better PCB thermal spreading but higher junction-to-ambient resistance; less suitable for high-power density layouts.	Select when board-level heatsinking via copper pour is preferred over discrete clip mounting.
STP36NF06L	60V V_DSS, 11mΩ R_DS(on) @ 10V, 25nC Q_g; higher gate charge and on-resistance than IRFR3709ZTRPBF.	Lower efficiency at 4.5V gate drive; requires 10V gate bias for optimal R_DS(on), limiting use with 3.3V controllers.	Choose only if 60V blocking voltage is mandatory and gate drive voltage ≥10V is available.

Compared with IRLR3709ZPBF and STP36NF06L, IRFR3709ZTRPBF offers superior 4.5V drive capability, lower gate charge, and optimized thermal path for high-current, high-frequency synchronous rectification - making it the preferred choice for space- and efficiency-critical VRM and telecom PSU designs.

Availability

IRFR3709ZTRPBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, industrial motor drives, and automotive ADAS power supplies requiring stable component supply and long-term production continuity.

Supply support for IRFR3709ZTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRFR3709ZTRPBF belongs to Infineon's HEXFET® Trench MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR3709ZTRPBF supports 61A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the I-Pak package and ensures safe operation under sustained high-temperature conditions typical in enclosed power supplies.

Does this MOSFET require a gate resistor, and what value is recommended?

Yes - a series gate resistor (5–10Ω) is recommended to dampen ringing, limit peak gate current, and suppress C_dv/dt-induced turn-on. The 17nC total gate charge and low input capacitance (C_iss = 2330pF) make it responsive to moderate gate drive strength, but uncontrolled edge rates increase EMI and shoot-through risk.

Can IRFR3709ZTRPBF be used in linear mode (as a pass transistor)?

No - it is not rated or characterized for linear (SOA-limited) operation. The Safe Operating Area curve shows operation is limited by R_DS(on) at pulse widths >100µs, and no SOA data is provided for DC or long-pulse conditions. Use only in switched-mode applications per datasheet test conditions.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes - the body diode is fully characterized with t_rr = 29–44ns and Q_rr = 25–37nC at I_F = 12A, V_DD = 15V, and di/dt = 100A/µs. These values enable clean commutation in synchronous buck and forward converters without external diode supplementation.

IRFR3709ZTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 86A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2330 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3709ZTRPBF FAQ

1.How can I place an order for IRFR3709ZTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3709ZTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3709ZTRPBF reliable?

The price and inventory of IRFR3709ZTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3709ZTRPBF is usually 5 days.

3.What payment methods are accepted for IRFR3709ZTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3709ZTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3709ZTRPBF?

IRFR3709ZTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3709ZTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3709ZTRPBF?

For technical support, including IRFR3709ZTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3709ZTRPBF requirements.

6.How does Aetrix verify that IRFR3709ZTRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3709ZTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3709ZTRPBF meets industry standards.

7.What is the process for return or replacement of IRFR3709ZTRPBF?

All IRFR3709ZTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3709ZTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3709ZTRPBF part is unused and in its original packaging.

Return procedure for IRFR3709ZTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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