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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3710ZPBF

Name: IRFR3710ZPBF
Brand: Infineon Technologies
SKU: IRFR3710ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3710ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3710ZPBF.pdf

Description:: MOSFET N-CH 100V 42A DPAK

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Product details

Overview

IRFR3710ZPBF from Infineon Technologies is a 100 V, 42 A (T_C = 25°C), D-Pak packaged N-channel enhancement-mode HEXFET® Power MOSFET with 15–18 mΩ R_DS(on) at V_GS = 10 V and 175°C maximum junction temperature. It delivers fast switching (t_r = 43 ns, t_f = 42 ns), 200 mJ tested single-pulse avalanche energy, and is widely deployed in DC-DC converters, motor drives, and power supply synchronous rectification.

For engineers reviewing the IRFR3710ZPBF datasheet, IRFR3710ZPBF pinout, IRFR3710ZPBF application, or IRFR3710ZPBF equivalent, key selection criteria include its 1.05°C/W junction-to-case thermal resistance, 69–100 nC total gate charge, body diode reverse recovery charge (Q_rr = 41–62 nC), and validated repetitive avalanche capability up to T_jmax.

Technical Context

This MOSFET employs advanced silicon processing to achieve ultra-low on-resistance per die area while maintaining robust unclamped inductive switching performance. Its design supports high-current, high-temperature operation with guaranteed 175°C junction rating and thermally limited EAS = 150 mJ (typical) under standardized test conditions (L = 0.28 mH, I_AS = 33 A, R_G = 25 Ω).

The device integrates a low-inductance internal structure (L_D = 4.5 nH, L_S = 7.5 nH) and exhibits C_iss = 2930 pF, C_oss = 290 pF (V_DS = 25 V), and C_rss = 180 pF - enabling predictable gate drive behavior and reduced switching losses in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; defines upper limit for bus voltage in buck, flyback, and half-bridge designs.
R_DS(on)	15–18 mΩ @ V_GS = 10 V, I_D = 33 A - Directly determines conduction loss (P_cond ≈ I_D² × R_DS(on)) in continuous high-current operation.
I_D (T_C = 25°C)	42 A - Package-limited continuous drain current; sets practical output current ceiling for PCB-mounted D-Pak layout with adequate heatsinking.
Q_g	69–100 nC - Total gate charge required to fully turn on; governs gate driver power requirement and switching speed trade-off.
E_AS (tested)	200 mJ - Minimum single-pulse avalanche energy verified 100% in production; enables reliable operation during inductive load turn-off transients.
R_θJC	1.05 °C/W - Junction-to-case thermal resistance; used with heatsink interface to calculate ΔT_j-c = P_D × R_θJC for thermal design.
V_GS(th)	2.0–4.0 V - Gate threshold voltage range; ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers.

Pinout & Package

IRFR3710ZPBF uses the industry-standard D-Pak (TO-252AA) surface-mount package with exposed drain pad for enhanced thermal dissipation. The package measures 6.7 mm × 6.2 mm × 2.4 mm and is lead-free (RoHS-compliant).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel formation; requires ≥10 V for full enhancement; sensitive to ESD (±20 V absolute max rating).
D	Drain	Main high-side current path; electrically connected to exposed copper pad for thermal and electrical grounding in PCB layout.
S	Source	Reference node for gate drive and current sensing; forms intrinsic body diode anode (S→D forward conduction).

Key Features

Feature	Design Value
Ultra-low R_DS(on)	15–18 mΩ enables <1 W conduction loss at 33 A, reducing thermal stress in compact power stages.
175°C operating junction temperature	Supports sustained operation in high-ambient environments (e.g., industrial motor controllers, automotive under-hood modules).
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to T_jmax, eliminating need for external snubbers in many flyback/LLC designs.
Fast switching with low Q_gd/Q_gs	Q_gd = 25 nC and Q_gs = 15 nC yield low Miller ratio, improving immunity to dv/dt-induced false turn-on.
Low source/drain inductance	L_S = 7.5 nH and L_D = 4.5 nH minimize parasitic ringing and improve EMI performance in high-frequency SMPS.

Applications

DC-DC Synchronous Rectifier

Brushless DC Motor Drive

Use Scenario: Used as low-side synchronous rectifier in 12 V–48 V input buck converters delivering up to 30 A output.

IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce forward conduction loss and improve efficiency by >3% at full load.

Use Value: 15–18 mΩ R_DS(on) cuts conduction loss vs. 0.4 V Schottky (e.g., ~0.42 W vs. ~1.2 W at 30 A), directly lowering thermal design burden.

Use Scenario: High-side switch in three-phase inverter stage driving 200–500 W BLDC motors in HVAC blowers and power tools.

IC Role / Device Role / Timing Role: Handles 42 A peak phase current with fast turn-off (t_f = 42 ns) to minimize shoot-through risk during PWM commutation.

Use Value: 200 mJ tested avalanche energy absorbs inductive kickback during fault events without failure, enhancing system reliability.

Industrial AC-DC Power Supply

LED Driver Constant-Current Stage

Use Scenario: Primary-side switching FET in 150–300 W LLC resonant converter with 380 V DC bus.

IC Role / Device Role / Timing Role: Operates in ZVS region but must withstand voltage spikes during transient overloads.

Use Value: 100 V V_DSS provides 20% margin above nominal 380 V bus (peak ≈ 475 V), while 1.05°C/W R_θJC enables stable thermal management on 1"² FR-4 PCB.

Use Scenario: Low-side current-sense switch in constant-current LED driver for street lighting (30–60 V string, 1.5–3 A).

IC Role / Device Role / Timing Role: Modulates LED current via PWM at 1–20 kHz with minimal duty-cycle distortion.

Use Value: V_GS(th) = 2.0–4.0 V ensures clean turn-on with microcontroller GPIO; low Q_g (69–100 nC) reduces gate driver power consumption and heat.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP36NF10	R_DS(on) = 30 mΩ (higher), Q_g = 75 nC, same V_DSS = 100 V, TO-220 package	Higher conduction loss; requires through-hole mounting and larger heatsink; no D-Pak footprint compatibility	Select when cost sensitivity outweighs board space and thermal constraints; avoid in high-density SMT designs.
IRF3205PbF	R_DS(on) = 8.0 mΩ (lower), but V_DSS = 55 V, TO-220 package, no avalanche rating specified	Not suitable for 100 V bus applications; lacks documented repetitive avalanche capability	Only consider for ≤48 V systems where lower R_DS(on) justifies voltage derating and package change.

Compared with STP36NF10 and IRF3205PbF, IRFR3710ZPBF uniquely combines D-Pak SMT compatibility, 100 V rating, sub-20 mΩ on-resistance, and production-tested 200 mJ avalanche energy - making it optimal for space-constrained, high-reliability industrial power stages.

Availability

IRFR3710ZPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and industrial AC-DC power supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFR3710ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion applications - emphasizing low R_DS(on), fast switching, rugged avalanche performance, and extended temperature operation.

FAQ

Is IRFR3710ZPBF suitable for logic-level gate drive?

No - IRFR3710ZPBF is not a logic-level MOSFET. Its V_GS(th) ranges from 2.0 V to 4.0 V, and it requires ≥10 V gate drive to achieve rated R_DS(on) of 15–18 mΩ. Driving it with only 3.3 V or 5 V results in significantly higher on-resistance and excessive conduction loss. A dedicated gate driver or level-shifter is recommended for microcontroller-based control.

What is the maximum allowable case temperature for continuous operation?

The maximum continuous case temperature is 100°C, beyond which the package-limited continuous drain current drops from 42 A (at 25°C) to 39 A (at 100°C). Operation above 100°C risks exceeding the 175°C junction limit unless thermal resistance is reduced via enhanced heatsinking or forced airflow - always verify using R_θJC = 1.05°C/W and measured P_D.

Does IRFR3710ZPBF have a built-in body diode, and what are its recovery characteristics?

Yes - it features an integral N-channel body diode (source-to-drain). At T_J = 25°C and I_F = 33 A, its reverse recovery time (t_rr) is 35–53 ns, with Q_rr = 41–62 nC and di/dt = 100 A/µs. These values indicate fast, soft recovery suitable for synchronous rectification, but external Schottky clamping may still be needed in ultra-high-frequency (>500 kHz) or high-di/dt applications.

How is avalanche energy tested, and is it production-verified?

Avalanche energy is tested per JEDEC JESD24-11 using unclamped inductive switching (UIS) with L = 0.28 mH, I_AS = 33 A, R_G = 25 Ω, and starting T_J = 25°C. The 200 mJ value is 100% production-tested on every unit - not just sampled - ensuring each device meets this minimum energy absorption capability before shipment.

IRFR3710ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 33A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2930 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3710ZPBF FAQ

1.How can I place an order for IRFR3710ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3710ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3710ZPBF reliable?

The price and inventory of IRFR3710ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3710ZPBF is usually 5 days.

3.What payment methods are accepted for IRFR3710ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3710ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3710ZPBF?

IRFR3710ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3710ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3710ZPBF?

For technical support, including IRFR3710ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3710ZPBF requirements.

6.How does Aetrix verify that IRFR3710ZPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3710ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3710ZPBF meets industry standards.

7.What is the process for return or replacement of IRFR3710ZPBF?

All IRFR3710ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3710ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3710ZPBF part is unused and in its original packaging.

Return procedure for IRFR3710ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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