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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3710ZTR

Name: IRFR3710ZTR
Brand: Infineon Technologies
SKU: IRFR3710ZTR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3710ZTR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3710ZTR.pdf

Description:: MOSFET N-CH 100V 42A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR3710ZTR from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode automotive-grade HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 100 V V_DSS, 18 mΩ R_DS(on) at V_GS = 10 V, and 42 A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_d(on) = 14 ns, t_f = 42 ns), and rated repetitive avalanche energy up to 56 mJ - deployed in engine control units, DC-DC converters, and motor drive stages.

For engineers reviewing the IRFR3710ZTR datasheet, IRFR3710ZTR pinout, IRFR3710ZTR application, or IRFR3710ZTR equivalent, key selection criteria include its low R_DS(on) per silicon area, thermally robust 175°C operation, unclamped inductive switching capability, and automotive qualification per AEC-Q101 - critical for high-reliability power stage design.

Technical Context

This MOSFET employs advanced planar silicon processing to minimize conduction loss while maintaining ruggedness under transient overloads. Its gate charge profile (Q_g = 69–100 nC, Q_gd = 25 nC) supports efficient high-frequency PWM control in synchronous buck and half-bridge topologies.

The integrated body diode exhibits V_SD = 1.3 V at I_S = 33 A and fast reverse recovery (t_rr = 35–53 ns, Q_rr = 41–62 nC), enabling reliable freewheeling in inductive loads without external Schottky supplementation in many 12 V/24 V automotive systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands up to 100 V drain-source blocking voltage before avalanche onset, suitable for 24 V nominal automotive bus with load dump margin.
R_DS(on)	15–18 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 42 A, reducing heatsink requirements in space-constrained ECUs.
I_D (continuous)	42 A @ T_C = 25°C - Sustains high-current motor gate drive or solenoid actuation without derating at moderate case temperatures.
T_J(max)	175°C - Allows operation in under-hood environments exceeding 125°C ambient, with thermal headroom for transient overload.
E_AS	56 mJ (tested) - Supports unclamped inductive switching of ≥33 A loads without failure, eliminating need for external snubbers in relay drivers.
Q_g	69–100 nC - Determines gate driver current demand; enables 100 kHz+ switching with ≤2 A peak gate drive in typical PCB layouts.
t_r/t_f	43 ns / 42 ns - Minimizes switching transition losses and EMI generation during hard-switched operation in DC-DC stages.

Pinout & Package

IRFR3710ZTR is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal enhancement. The three terminals are arranged in standard D-Pak orientation: Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls channel conduction; requires 2.0–4.0 V threshold and ≤200 nA leakage; sensitive to ESD - must be protected with series resistor and TVS.
Pin 2 (D)	Drain terminal	High-side switching node; electrically connected to exposed copper pad - must be soldered to large PCB copper pour for thermal dissipation and low-inductance path.
Pin 3 (S)	Source terminal	Reference node for gate drive; carries full load current and body diode reverse recovery charge; layout must minimize LS to reduce voltage spikes during turn-off.

Key Features

Feature	Design Value
Automotive qualification	AEC-Q101 qualified - validated for temperature cycling, humidity, and mechanical shock in engine bay deployments.
Repetitive avalanche rating	Rated for repeated unclamped inductive switching up to T_Jmax - eliminates need for external clamping in solenoid and relay driver circuits.
Low gate charge	Q_g = 69–100 nC with Q_gd/Q_g ≈ 25% - improves Miller immunity and reduces gate driver power loss in high-frequency inverters.
Enhanced body diode	V_SD = 1.3 V, t_rr = 35–53 ns - enables efficient freewheeling in H-bridge motor drives without external diode parallel.
Thermal performance	R_θJC = 1.05 °C/W - allows >40 W power dissipation with modest heatsinking, supporting compact 42 A power stages.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Automotive DC-DC Converter Primary Switch

Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 40 A and pulse widths down to 1 ms.

IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil energization; operates in hard-switched mode with 10–20 kHz PWM.

Use Value: 18 mΩ R_DS(on) limits conduction loss to <30 W during injection pulses, while 175°C rating ensures reliability across under-hood temperature swings.

Use Scenario: Primary-side switch in 12 V to 5 V/3.3 V synchronous buck converter powering ADAS sensors and microcontrollers.

IC Role / Device Role / Timing Role: High-efficiency N-channel switch operating at 300–500 kHz with gate drive referenced to source.

Use Value: Low Q_g and fast t_f reduce switching loss below 0.5 W at 500 kHz, enabling >92% efficiency without forced air cooling.

Electric Power Steering (EPS) Motor Phase Leg

Automotive HVAC Blower Motor Inverter

Use Scenario: Half-bridge leg driving 24 V brushed or BLDC assist motor with peak phase current ≥35 A.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter; commutated with dead-time controlled gate signals.

Use Value: Repetitive avalanche rating handles back-EMF transients during sudden motor deceleration, preventing destructive breakdown without snubber networks.

Use Scenario: PWM-controlled 24 V blower motor delivering variable airflow in cabin climate systems.

IC Role / Device Role / Timing Role: High-current low-side switch modulated at 2–20 kHz to regulate motor speed and torque.

Use Value: 42 A continuous rating supports 300 W motor loads; low R_DS(on) minimizes audible PWM whine by reducing current ripple-induced vibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL120N10F7	R_DS(on) = 9.5 mΩ @ 10 V, but rated only to 100 V and 120 A; no AEC-Q101 certification; R_θJC = 1.25 °C/W.	Higher current capacity but lacks automotive qualification and has higher thermal resistance - unsuitable for safety-critical ECU use.	Select only for non-automotive industrial 100 V switching where qualification is not required.
ON Semiconductor NTMFS4C09NT1G	R_DS(on) = 10.5 mΩ @ 10 V, AEC-Q101 qualified, DFN5x6 package; R_θJC = 0.9 °C/W; no specified repetitive avalanche rating.	Lower R_DS(on) and better thermal resistance, but lacks documented avalanche capability - requires external protection in inductive switching.	Prefer for high-efficiency, thermally constrained designs where inductive energy is clamped externally.

Compared with STL120N10F7 and NTMFS4C09NT1G, IRFR3710ZTR uniquely balances AEC-Q101 compliance, verified repetitive avalanche, and proven D-Pak manufacturability - making it optimal for cost-sensitive, high-reliability automotive power stages where qualification and ruggedness are non-negotiable.

Availability

IRFR3710ZTR is available at Aetrix Electronics and suitable for engine control units, automotive DC-DC converters, and electric power steering systems requiring stable component supply across extended vehicle lifecycles.

Supply support for IRFR3710ZTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with deep heritage in silicon power devices dating to International Rectifier's HEXFET® innovation.

The IRFR3710ZTR belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability 12 V/24 V vehicle subsystems demanding robustness against load dump, thermal stress, and repetitive inductive transients.

FAQ

Is IRFR3710ZTR pin-compatible with IRFR3708 or IRFR3711?

No. IRFR3710ZTR uses D-Pak (TO-252) with G-D-S pinout. IRFR3708 is also D-Pak but has R_DS(on) = 27 mΩ and lower I_D; IRFR3711 is I-Pak (TO-251) with different footprint and thermal pad layout. Mechanical and thermal interfaces are not interchangeable without PCB redesign.

What is the maximum recommended gate resistor value for 100 kHz switching?

For 100 kHz PWM with 100 nC total gate charge, a 10 Ω gate resistor limits peak gate current to ~1.5 A and yields ~100 ns effective rise/fall time. Values above 22 Ω increase switching loss significantly; values below 4.7 Ω risk excessive gate driver stress without improving efficiency.

Does IRFR3710ZTR require a gate driver IC, or can it be driven directly from a microcontroller?

A 3.3 V or 5 V microcontroller GPIO cannot reliably drive IRFR3710ZTR due to its 4.0 V max V_GS(th) and 100 nC Q_g. Direct drive causes slow turn-on, high conduction loss, and thermal runaway. A dedicated gate driver (e.g., TC4427, MIC4424) with ≥2 A peak output is required for stable operation.

How is the 56 mJ avalanche energy rating validated in production?

Each IRFR3710ZTR wafer lot undergoes 100% unclamped inductive test per JEDEC JESD22-A110, applying 33 A inductive current into 100 V V_DS with t_p = 10 µs. Devices passing this stress without parameter shift or parametric failure receive the rated E_AS = 56 mJ designation on datasheet and label.

IRFR3710ZTR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 33A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2930 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3710ZTR FAQ

1.How can I place an order for IRFR3710ZTR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3710ZTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3710ZTR reliable?

The price and inventory of IRFR3710ZTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3710ZTR is usually 5 days.

3.What payment methods are accepted for IRFR3710ZTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3710ZTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3710ZTR?

IRFR3710ZTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3710ZTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3710ZTR?

For technical support, including IRFR3710ZTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3710ZTR requirements.

6.How does Aetrix verify that IRFR3710ZTR is sourced from the original manufacturer or authorized distributors?

All IRFR3710ZTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3710ZTR meets industry standards.

7.What is the process for return or replacement of IRFR3710ZTR?

All IRFR3710ZTR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3710ZTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3710ZTR part is unused and in its original packaging.

Return procedure for IRFR3710ZTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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