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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3710ZTRL

Name: IRFR3710ZTRL
Brand: Infineon Technologies
SKU: IRFR3710ZTRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3710ZTRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3710ZTRL.pdf

Description:: MOSFET N-CH 100V 42A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR3710ZTRL from Infineon Technologies is an N-channel enhancement-mode automotive-grade power MOSFET in D-Pak (TO-252) package, rated for 100 V V_DSS, 42 A continuous drain current at T_C = 25°C, and 18 mΩ R_DS(on) at V_GS = 10 V. It features 175°C maximum junction temperature, fast switching (t_d(on) = 14 ns, t_f = 42 ns), and rated repetitive avalanche capability-designed for high-efficiency DC-DC converters and motor control in engine management systems.

For engineers reviewing the IRFR3710ZTRL datasheet, IRFR3710ZTRL pinout, IRFR3710ZTRL application, or IRFR3710ZTRL equivalent, key selection criteria include its low R_DS(on) at 10 V gate drive, robust body diode (V_SD = 1.3 V, Q_rr = 41–62 nC), thermal performance (R_θJC = 1.05 °C/W), and AEC-Q101 qualification for under-hood automotive use.

Technical Context

This MOSFET employs advanced HEXFET® silicon processing to minimize conduction loss per unit area while maintaining ruggedness against unclamped inductive switching. Its design integrates a low-inductance source-drain path (L_S = 7.5 nH, L_D = 4.5 nH) and optimized gate charge profile (Q_g = 69–100 nC, Q_gd = 25 nC) to support high-frequency hard-switching up to 500 kHz in synchronous buck topologies.

The device operates with a gate threshold voltage of 2.0–4.0 V and exhibits positive temperature coefficient for R_DS(on), enabling inherent current sharing in paralleled configurations. Its 175°C T_J(max) and tested single-pulse avalanche energy (E_AS = 56 mJ) allow reliable operation in transient overload conditions common in automotive load-dump and inductive kick scenarios.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands up to 100 V drain-source blocking voltage before breakdown; suitable for 48 V automotive systems and 24 V industrial rails.
R_DS(on) @ V_GS = 10 V	15–18 mΩ - Low on-resistance minimizes conduction loss in high-current paths; enables <1.5 W dissipation at 42 A continuous.
I_D @ T_C = 25°C	42 A - Continuous drain current rating at case temperature 25°C; limited by silicon, not package.
Q_g / Q_gd	69–100 nC / 25 nC - Gate charge values define driver strength requirements; Miller charge impacts turn-off immunity in high-dV/dt environments.
T_J(max)	175°C - Maximum junction temperature supports operation in high-ambient under-hood locations without derating penalties.
E_AS	56 mJ - Single-pulse avalanche energy rating confirms ruggedness during inductive switching transients without failure.
V_SD / Q_rr	1.3 V / 41–62 nC - Body diode forward voltage and reverse recovery charge impact efficiency and EMI in freewheeling and synchronous rectification.

Pinout & Package

IRFR3710ZTRL is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal enhancement. The package measures 6.73 mm × 6.22 mm × 2.39 mm and is RoHS-compliant and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side switch node; carries full load current and body diode return path.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires 2.0–4.0 V threshold to initiate conduction; driven via gate resistor to control dV/dt and ringing.
Pin 3 (Drain)	Power output (D)	High-side power node; connected to load or supply rail; electrically tied to exposed copper pad for thermal conduction to PCB.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	15–18 mΩ at 10 V gate drive reduces I²R losses in high-current automotive power stages.
175°C junction rating	Enables operation in high-ambient under-hood environments without thermal shutdown or derating.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching events up to T_J(max), improving system reliability.
Fast switching speed	t_d(on) = 14 ns, t_f = 42 ns supports high-frequency PWM control with minimal switching loss.
Optimized body diode	V_SD = 1.3 V and Q_rr = 41–62 nC reduce freewheeling loss and EMI in non-synchronous topologies.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-speed, high-current switching of 12 V fuel injectors with strict pulse-width resolution and thermal cycling tolerance.

IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil current; handles 30–40 A peak pulses at 1–10 Hz with <1 µs timing precision.

Use Value: 18 mΩ R_DS(on) limits on-state loss to <0.7 W at 40 A, while 175°C rating ensures reliability across -40°C to +150°C ambient.

Use Scenario: PWM-controlled DC motor drive for cabin air blower in passenger vehicles, requiring smooth speed regulation and stall protection.

IC Role / Device Role / Timing Role: Half-bridge low-side switch in H-bridge configuration; commutates up to 25 A continuous with 20 kHz PWM.

Use Value: Fast turn-off (t_f = 42 ns) and low Q_gd suppress shoot-through risk; body diode Q_rr minimizes voltage spikes during freewheeling.

48 V Mild Hybrid DC-DC Converter

Commercial Vehicle LED Headlamp Driver

Use Scenario: Synchronous rectifier in 48 V–12 V bidirectional buck-boost converter for 48 V mild hybrid architectures.

IC Role / Device Role / Timing Role: Secondary-side synchronous MOSFET replacing Schottky diode; conducts up to 42 A with 100 kHz switching.

Use Value: 15 mΩ typical R_DS(on) cuts conduction loss by >60% vs. 40 V Schottky; C_oss = 290 pF enables zero-voltage switching (ZVS) assist.

Use Scenario: Constant-current LED driver for adaptive front lighting systems (AFS), requiring overvoltage and short-circuit protection.

IC Role / Device Role / Timing Role: High-side or low-side current-limiting switch in LED string control; sustains 10 A continuous with thermal foldback.

Use Value: Repetitive avalanche rating absorbs inductive kick from LED inductor during fault shutdown; 175°C T_J prevents thermal runaway during beam-steering transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL100N10F7	R_DS(on) = 9.5 mΩ @ 10 V; smaller PowerFLAT 5x6 package; lower Q_g (55 nC); no rated avalanche capability.	Better for space-constrained, high-frequency SMPS; unsuitable for unclamped inductive loads without external clamping.	Select when board area and switching loss dominate; avoid where inductive energy absorption is required.
ON Semiconductor NTMFS4C09NT1G	R_DS(on) = 10.5 mΩ @ 10 V; SO-8FL package; 150°C T_J(max); Q_rr = 32 nC; AEC-Q101 qualified.	Higher current density but lower thermal margin; better for compact low-power modules; less rugged in avalanche.	Prefer for cost-sensitive 12 V systems with moderate thermal stress; verify avalanche margin in motor drive designs.

Compared with STL100N10F7 and NTMFS4C09NT1G, IRFR3710ZTRL trades slightly higher R_DS(on) for superior thermal robustness (175°C), proven repetitive avalanche capability, and D-Pak's superior thermal resistance (R_θJC = 1.05 °C/W), making it optimal for thermally demanding automotive power stages.

Availability

IRFR3710ZTRL is available at Aetrix Electronics and suitable for engine control units, HVAC motor drives, 48 V DC-DC converters, and LED headlamp systems requiring stable component supply across extended automotive lifecycles.

Supply support for IRFR3710ZTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200 standards.

This device belongs to Infineon's automotive-qualified HEXFET® power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine, transmission, and chassis control systems.

FAQ

Is IRFR3710ZTRL AEC-Q101 qualified?

Yes. IRFR3710ZTRL is explicitly qualified to AEC-Q101 Rev D for automotive discrete semiconductors. Test reports confirm compliance with stress tests including HTGB, HTRB, AC-H3TRB, and UIS, with full traceability to Infineon's wafer fab and assembly sites.

What is the recommended gate resistor value for 100 kHz PWM operation?

A 10 Ω series gate resistor is recommended for 100 kHz operation with a 5 V logic-level driver. This value balances switching speed (t_f ≈ 45 ns) and gate oscillation suppression, given Q_gd = 25 nC and typical driver output impedance of 2–5 Ω.

Can IRFR3710ZTRL be used in parallel configurations?

Yes. Its positive R_DS(on) temperature coefficient (normalized R_DS(on) rises ~2.5× from 25°C to 175°C) enables stable current sharing. Parallel operation requires matched layout, identical gate drive routing, and thermal coupling via shared copper pour to ensure <5°C inter-device ΔT.

Does the body diode support continuous conduction mode (CCM) in synchronous rectification?

Yes. The integral body diode is rated for 56 A continuous source current (I_S) and 220 A pulsed (I_SM). Its V_SD = 1.3 V and Q_rr = 41–62 nC are characterized for CCM operation at ≤100 kHz, with reverse recovery verified under di/dt = 100 A/µs conditions.

IRFR3710ZTRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 33A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2930 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3710ZTRL FAQ

1.How can I place an order for IRFR3710ZTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3710ZTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3710ZTRL reliable?

The price and inventory of IRFR3710ZTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3710ZTRL is usually 5 days.

3.What payment methods are accepted for IRFR3710ZTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3710ZTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3710ZTRL?

IRFR3710ZTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3710ZTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3710ZTRL?

For technical support, including IRFR3710ZTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3710ZTRL requirements.

6.How does Aetrix verify that IRFR3710ZTRL is sourced from the original manufacturer or authorized distributors?

All IRFR3710ZTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3710ZTRL meets industry standards.

7.What is the process for return or replacement of IRFR3710ZTRL?

All IRFR3710ZTRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3710ZTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3710ZTRL part is unused and in its original packaging.

Return procedure for IRFR3710ZTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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