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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3710ZTRR

Name: IRFR3710ZTRR
Brand: Infineon Technologies
SKU: IRFR3710ZTRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3710ZTRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3710ZTRR.pdf

Description:: MOSFET N-CH 100V 42A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR3710ZTRR from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode automotive-grade HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 100 V V_DSS, 42 A continuous drain current at T_C = 25°C, and 18 mΩ R_DS(on) at V_GS = 10 V. It features 175°C maximum junction temperature, fast switching (t_d(on) = 14 ns, t_f = 42 ns), and rated repetitive avalanche energy up to 56 mJ - designed for high-efficiency DC-DC converters and motor control in under-hood automotive systems.

For engineers reviewing the IRFR3710ZTRR datasheet, IRFR3710ZTRR pinout, IRFR3710ZTRR application, or IRFR3710ZTRR equivalent, key selection criteria include its low R_DS(on) × Q_g figure-of-merit (≈1.2 µΩ·nC), body diode reverse recovery charge (Q_rr = 41–62 nC), thermal resistance R_θJC = 1.05°C/W, and automotive qualification per AEC-Q101.

Technical Context

This MOSFET employs advanced planar silicon processing to achieve ultra-low on-resistance per die area while maintaining robust avalanche capability. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) supports standard 10 V gate drive, and its transconductance (g_fs = 39 S typical) enables precise current regulation in closed-loop power stages.

The device integrates a co-packaged body diode with V_SD ≤ 1.3 V at I_S = 33 A and t_rr = 35–53 ns, enabling synchronous rectification and freewheeling in buck converters and H-bridge motor drivers without external diodes - critical for minimizing conduction loss and EMI in space-constrained automotive modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands transient overvoltage up to 100 V in 12 V/24 V automotive battery systems.
R_DS(on)	15–18 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 42 A, reducing heatsink requirements.
I_D (continuous)	42 A @ T_C = 25°C - Supports high-current loads such as radiator fan drivers and EPS assist motors.
Q_g	69–100 nC - Determines gate driver power requirement; compatible with common 1–2 A peak gate drivers.
t_f / t_r	42 ns / 43 ns - Enables >500 kHz switching in hard-switched topologies with controlled dV/dt.
T_J(max)	175°C - Meets under-hood thermal requirements without derating at ambient up to 125°C.
E_AS	56 mJ (tested) - Supports unclamped inductive switching in motor phase-legs without snubbers.

Pinout & Package

IRFR3710ZTRR is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection. The package provides 1.05°C/W junction-to-case thermal resistance and is optimized for PCB copper pour heat spreading.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side switch node; carries full load current.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires 10 V drive for full enhancement; sensitive to ESD.
Pin 3 (Drain)	Power output (D)	Connected to exposed metal tab; serves as main current path and primary thermal interface to PCB.

Key Features

Feature	Design Value
Automotive qualification	AEC-Q101 qualified - validated for temperature cycling, humidity, and mechanical shock in automotive environments.
Repetitive avalanche rating	Rated for repeated unclamped inductive switching up to T_Jmax - eliminates need for external clamping in motor phase-legs.
Ultra-low R_DS(on)	15 mΩ typical - reduces I²R losses by >30% vs. legacy 100 V MOSFETs in same package.
Fast body diode	t_rr = 35–53 ns, Q_rr = 41–62 nC - minimizes switching loss and voltage overshoot during freewheeling.
Thermal robustness	R_θJC = 1.05°C/W - enables direct thermal coupling to 2 oz copper planes, supporting >30 W dissipation in compact layouts.

Applications

Electric Power Steering (EPS)

Automotive DC-DC Converters

Use Scenario: High-current H-bridge driver controlling brushless motor torque assist in steering column modules.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter leg; handles bidirectional 40 A peak current with <100 ns dead-time tolerance.

Use Value: 18 mΩ R_DS(on) limits conduction loss to <30 W at peak load, enabling passive cooling in sealed EPS housings.

Use Scenario: Primary synchronous rectifier in 12 V → 5 V/3.3 V isolated buck converter for ADAS camera and radar ECUs.

IC Role / Device Role / Timing Role: Secondary-side power switch operating at 300–500 kHz; commutates with precise gate timing to minimize shoot-through risk.

Use Value: Fast t_f/t_r and low Q_gd/Q_gs ratio ensure clean zero-voltage switching transitions, reducing EMI emissions below CISPR 25 Class 5 limits.

Radiator Fan Control

Start-Stop Battery Management

Use Scenario: PWM-controlled high-side switch driving 12 V brushed radiator fan (up to 35 A).

IC Role / Device Role / Timing Role: High-current, thermally rugged switch with integrated body diode conducting freewheel current during PWM off-time.

Use Value: 175°C T_J(max) and 56 mJ E_AS allow reliable operation during rapid PWM transients and load dump events.

Use Scenario: Load switch isolating auxiliary battery circuits during engine cranking to prevent brownout in infotainment systems.

IC Role / Device Role / Timing Role: Low-R_DS(on) series pass element with fast turn-on/off for microsecond-level load disconnect/reconnect.

Use Value: 15 mΩ R_DS(on) ensures <0.5 V drop at 30 A, preserving system voltage stability during cold-cranking (6 V minimum battery).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL100N10F7	R_DS(on) = 9.5 mΩ @ 10 V; Q_g = 85 nC; T_J(max) = 175°C; DPAK package	Lower R_DS(on) improves efficiency but higher Q_g increases gate drive loss; identical thermal footprint	Preferred where conduction loss dominates and gate drive capability allows higher Q_g.
ON Semiconductor NTMFS5C673NL	R_DS(on) = 12.5 mΩ @ 10 V; Q_g = 52 nC; T_J(max) = 150°C; SO-8FL package	Lower thermal rating and different package require PCB redesign; lower Q_g eases gate drive design	Consider only if board space is constrained and junction temperature stays below 150°C.

Compared with STL100N10F7 and NTMFS5C673NL, IRFR3710ZTRR offers balanced R_DS(on)/Q_g trade-off and full AEC-Q101 validation at 175°C - making it optimal for cost-sensitive, thermally demanding automotive power stages where reliability trumps marginal efficiency gains.

Availability

IRFR3710ZTRR is available at Aetrix Electronics and suitable for electric power steering (EPS), radiator fan control, and automotive DC-DC converters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IRFR3710ZTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with core expertise in silicon and wide-bandgap device design.

The IRFR3710ZTRR belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine bay and chassis control units where thermal resilience and avalanche robustness are mandatory.

FAQ

Is IRFR3710ZTRR pin-compatible with IRFR3710PBF?

Yes - both share identical D-Pak (TO-252) package, pinout (G-S-D), and thermal pad layout. IRFR3710ZTRR is the tape-and-reel version of the same die; electrical specs, R_DS(on), and thermal ratings are identical. No PCB or schematic changes are required for substitution.

What is the maximum recommended gate resistor for 500 kHz switching?

For 500 kHz hard-switching with 10 V gate drive, a 6.8 Ω gate resistor is validated per datasheet Fig. 18a test conditions. This value balances switching speed (t_f ≈ 42 ns) and gate ringing suppression. Lower values (<4.7 Ω) increase dV/dt stress; higher values (>10 Ω) raise switching loss above 0.3 W per cycle.

Does IRFR3710ZTRR require a negative gate turn-off voltage?

No - the device operates reliably with 0 V to +10 V gate drive. Its V_GS(th) range (2.0–4.0 V) ensures full enhancement at 10 V and safe turn-off at 0 V. Negative gate bias is unnecessary and not specified in the datasheet; applying −5 V or lower risks gate oxide damage per absolute max rating (±20 V).

Can IRFR3710ZTRR be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (normalized R_DS(on) rises with T_J) enables inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared thermal plane. Derate total current by 15% versus single-device rating to account for thermal coupling and parameter spread.

IRFR3710ZTRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 33A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2930 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3710ZTRR FAQ

1.How can I place an order for IRFR3710ZTRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3710ZTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3710ZTRR reliable?

The price and inventory of IRFR3710ZTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3710ZTRR is usually 5 days.

3.What payment methods are accepted for IRFR3710ZTRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3710ZTRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3710ZTRR?

IRFR3710ZTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3710ZTRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3710ZTRR?

For technical support, including IRFR3710ZTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3710ZTRR requirements.

6.How does Aetrix verify that IRFR3710ZTRR is sourced from the original manufacturer or authorized distributors?

All IRFR3710ZTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3710ZTRR meets industry standards.

7.What is the process for return or replacement of IRFR3710ZTRR?

All IRFR3710ZTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3710ZTRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3710ZTRR part is unused and in its original packaging.

Return procedure for IRFR3710ZTRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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