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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3710ZTRRPBF

Name: IRFR3710ZTRRPBF
Brand: Infineon Technologies
SKU: IRFR3710ZTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3710ZTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3710ZTRRPBF.pdf

Description:: MOSFET N-CH 100V 42A DPAK

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Product details

Overview

IRFR3710ZTRRPBF from Infineon Technologies is a 100 V, 42 A (T_C = 25°C), D-Pak packaged N-channel enhancement-mode HEXFET® Power MOSFET with 15–18 mΩ R_DS(on) at V_GS = 10 V and 175°C maximum junction temperature. It delivers fast switching (t_r = 43 ns, t_f = 42 ns), robust repetitive avalanche capability (E_AR up to 200 mJ), and low gate charge (Q_g = 69–100 nC), making it suitable for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRFR3710ZTRRPBF datasheet, IRFR3710ZTRRPBF pinout, IRFR3710ZTRRPBF application, or IRFR3710ZTRRPBF equivalent, key selection criteria include its 1.05°C/W junction-to-case thermal resistance, body diode reverse recovery (t_rr = 35–53 ns), and validated 100% production testing to 200 mJ single-pulse avalanche energy.

Technical Context

This MOSFET employs advanced silicon processing to achieve ultra-low on-resistance per die area while maintaining rated 100 V breakdown voltage and 175°C operational junction temperature. Its design integrates a low-inductance internal structure (L_D = 4.5 nH, L_S = 7.5 nH) and optimized gate oxide for stable threshold voltage (V_GS(th) = 2.0–4.0 V) across temperature.

The device supports unclamped inductive switching with defined avalanche waveforms (I_AS = 33 A, L = 0.28 mH, R_G = 25 Ω), and its C_iss/C_oss/C_rss values (2930/290/180 pF at V_DS = 25 V) enable predictable gate-drive design for hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands up to 100 V drain-source voltage before breakdown, enabling use in 48 V bus and 100 V industrial power stages.
R_DS(on)	15–18 mΩ @ V_GS = 10 V, I_D = 33 A - Low conduction loss ensures <1.5 W dissipation at 42 A continuous current with proper heatsinking.
I_D (continuous)	42 A @ T_C = 25°C - Package-limited current rating defines PCB-mount thermal design boundary for sustained operation.
Q_g	69–100 nC - Gate charge determines required driver peak current and switching loss trade-off in 100–500 kHz applications.
t_r/t_f	43/42 ns - Fast edge rates support high-frequency PWM control while minimizing overlap loss in bridge configurations.
E_AS (tested)	200 mJ - 100% production-tested single-pulse avalanche energy enables reliable operation under inductive fault conditions.
R_θJC	1.05 °C/W - Junction-to-case thermal resistance directly sets minimum heatsink requirement for thermal management.

Pinout & Package

IRFR3710ZTRRPBF uses the industry-standard D-Pak (TO-252AA) surface-mount package with three terminals: Drain (D), Gate (G), and Source (S). The exposed drain pad provides low-thermal-resistance path to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires 10 V drive for full enhancement; gate leakage ≤200 nA at ±20 V.
D	Drain	Main high-side current path; electrically connected to exposed metal pad for thermal and electrical sinking.
S	Source	Reference node for gate drive and current return; integral body diode anode (V_SD ≤1.3 V at 33 A).

Key Features

Feature	Design Value
Ultra-low R_DS(on)	15–18 mΩ enables >96% efficiency in 48 V/30 A synchronous buck converters at 250 kHz.
175°C operating temperature	Allows sustained operation in sealed enclosures or high-ambient environments without derating below 125°C.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to T_Jmax, eliminating need for external snubbers in motor drives.
Fast switching with low Q_g	69–100 nC total gate charge reduces driver power demand and enables clean 50 V/ns dv/dt control.
Low internal inductance	L_D = 4.5 nH, L_S = 7.5 nH minimizes voltage overshoot and ringing during hard switching.

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Buck Converter

Use Scenario: High-current BLDC motor phase leg in 24–48 V industrial actuators with PWM frequencies up to 20 kHz.

IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode conducting freewheeling current during dead-time.

Use Value: 175°C rating avoids thermal shutdown during stall conditions; 200 mJ avalanche energy withstands back-EMF spikes during abrupt deceleration.

Use Scenario: 48 V input to 12 V/30 A output isolated or non-isolated buck converter in telecom power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side power stage, replacing Schottky diodes to reduce conduction loss.

Use Value: 15 mΩ R_DS(on) cuts conduction loss by 65% vs. 40 V Schottky, improving full-load efficiency from 92% to 95.8%.

UPS Inverter Output Stage

Industrial LED Driver

Use Scenario: 100 V DC bus in-line inverter driving 230 VAC resistive and inductive loads with 50/60 Hz fundamental plus PWM harmonics.

IC Role / Device Role / Timing Role: High-side switch in H-bridge topology, commutating bidirectional current through transformer-coupled output.

Use Value: 100 V V_DSS margin accommodates 1.5× bus overvoltage transients; 1.05°C/W R_θJC enables direct copper pour heatsinking on double-sided PCB.

Use Scenario: Constant-current 350 mA–2 A LED string driver with dimming via PWM at 1–10 kHz in streetlight and high-bay fixtures.

IC Role / Device Role / Timing Role: Primary-side MOSFET in flyback or buck-boost controller IC reference design, switching at 65–130 kHz.

Use Value: Low Q_g (69 nC typ.) reduces gate driver losses; fast t_f (42 ns) suppresses EMI in Class B conducted emissions tests.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP36NF10	R_DS(on) = 30 mΩ (higher), Q_g = 72 nC, same V_DSS = 100 V, TO-220 package	Requires larger heatsink due to higher R_DS(on); not surface-mount compatible	Select when through-hole mounting is mandatory and 15 mΩ advantage is non-critical.
IRF3205PBF	R_DS(on) = 8.0 mΩ (lower), but V_DSS = 55 V only; TO-220 package; no 175°C rating	Unsuitable for 48 V+ systems; limited to 12–24 V battery-powered applications	Choose only for lower-voltage designs where sub-10 mΩ R_DS(on) justifies reduced voltage margin.

Compared with STP36NF10 and IRF3205PBF, IRFR3710ZTRRPBF uniquely balances 100 V rating, 15 mΩ on-resistance, D-Pak surface-mount compatibility, and 175°C operation-making it optimal for space-constrained, thermally demanding 48 V industrial power stages.

Availability

IRFR3710ZTRRPBF is available at Aetrix Electronics and suitable for motor drives, UPS inverters, DC-DC converters, and industrial LED drivers requiring stable component supply and long-term production continuity.

Supply support for IRFR3710ZTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial motor control, renewable energy inverters, and server power supplies.

FAQ

What is the maximum continuous drain current for IRFR3710ZTRRPBF at 100°C case temperature?

The maximum continuous drain current is 39 A at T_C = 100°C and V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat transfer at elevated case temperatures and must be verified against actual PCB layout and heatsink performance.

Does IRFR3710ZTRRPBF have a built-in body diode, and what are its key parameters?

Yes, it integrates a monolithic p-n junction body diode with V_SD ≤ 1.3 V at I_S = 33 A and T_J = 25°C, reverse recovery time t_rr = 35–53 ns, and Q_rr = 41–62 nC. These values are measured under standardized conditions (I_F = 33 A, dI/dt = 100 A/µs, V_DS = 50 V) and define freewheeling behavior in bridge topologies.

Can IRFR3710ZTRRPBF be used in avalanche mode, and is it production-tested for this condition?

Yes, it is rated for repetitive avalanche up to T_Jmax = 175°C, and every unit is 100% production-tested to 200 mJ single-pulse avalanche energy (E_AS) using the test circuit in Figure 12a. Avalanche operation must respect thermal limits and transient impedance curves shown in Figures 11 and 16.

What is the recommended gate resistor value for switching at 200 kHz in a half-bridge configuration?

A gate resistor of 6.8 Ω is validated in the datasheet for turn-off delay (t_d(off) = 53 ns) and fall time (t_f = 42 ns) measurements. For 200 kHz operation, this value balances switching speed and gate oscillation damping; lower values (≤4.7 Ω) may be used with robust gate drivers capable of ≥2 A peak current.

IRFR3710ZTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 33A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2930 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3710ZTRRPBF FAQ

1.How can I place an order for IRFR3710ZTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3710ZTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3710ZTRRPBF reliable?

The price and inventory of IRFR3710ZTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3710ZTRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR3710ZTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3710ZTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3710ZTRRPBF?

IRFR3710ZTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3710ZTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3710ZTRRPBF?

For technical support, including IRFR3710ZTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3710ZTRRPBF requirements.

6.How does Aetrix verify that IRFR3710ZTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3710ZTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3710ZTRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR3710ZTRRPBF?

All IRFR3710ZTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3710ZTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3710ZTRRPBF part is unused and in its original packaging.

Return procedure for IRFR3710ZTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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