Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3711

Name: IRFR3711
Brand: Infineon Technologies
SKU: IRFR3711
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFR3711

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3711.pdf

Description:: MOSFET N-CH 20V 100A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,904

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFR3711 from Infineon Technologies is a 20V, 110A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252AA) package, optimized as a synchronous rectifier FET in high-frequency DC-DC converters for telecom and server power supplies, featuring 6.5mΩ R_DS(on) at V_GS = 4.5V, 100% R_G tested, and fully characterized avalanche capability.

For engineers reviewing the IRFR3711 datasheet, IRFR3711 pinout, IRFR3711 application, or IRFR3711 equivalent, key selection criteria include low gate resistance (0.3–2.5Ω), ultra-low R_DS(on) at 4.5V drive, capacitive-induced turn-on immunity, and robust unclamped inductive switching performance up to 460mJ single-pulse avalanche energy.

Technical Context

This MOSFET employs planar silicon HEXFET technology with an integrated body diode optimized for synchronous buck topologies. Its gate threshold voltage (1.0–3.0V) and low Q_gd/Q_gs ratio (8.9nC/7.3nC) enable fast, controllable switching at >1MHz frequencies while minimizing shoot-through risk.

The device is characterized for operation across –55°C to +150°C junction temperature, with thermal resistance R_θJC = 1.04°C/W and R_θJA = 50°C/W (PCB mount), supporting high-current continuous conduction mode (CCM) operation in thermally constrained server VRMs and telecom rectifiers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20V - Maximum drain-source blocking voltage; suitable for 12V input rails with margin against transients.
R_DS(on) @ 4.5V	6.5mΩ max - Enables <1W conduction loss at 110A; critical for high-efficiency synchronous rectification.
I_D @ T_C=25°C	110A - Continuous drain current rating under ideal heatsinking; defines peak load capability in VRM phases.
Q_g	29–44nC - Total gate charge determines driver strength requirement and switching loss trade-off.
E_AS	460mJ - Single-pulse avalanche energy rating ensures ruggedness during unclamped inductive switching events.
R_G	0.3–2.5Ω - Gate resistance tightly controlled and 100% tested; reduces gate oscillation and EMI in hard-switched designs.
trr / Q_rr	48–75ns / 65–98nC - Body diode reverse recovery parameters validated for synchronous rectifier timing control.

Pinout & Package

IRFR3711 uses the JEDEC TO-252AA (D-Pak) surface-mount package with exposed drain pad for thermal and electrical performance. The package features three main terminals plus an auxiliary drain connection for low-inductance high-current paths.

Pin/Terminal	Circuit Role	Design Meaning
1 - GATE	Control electrode	Low-impedance input requiring <44nC charge; connects to gate driver IC output with minimal trace inductance.
2 - DRAIN	Main current sink	Primary high-side or low-side switch node; electrically tied to exposed copper pad for thermal conduction and current sharing.
3 - SOURCE	Reference and return path	Source terminal for gate drive reference; used as Kelvin sense point in precision current monitoring configurations.
4 - DRAIN	Auxiliary current path	Second drain connection to reduce package inductance and improve current distribution in high-di/dt applications.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V	6.5mΩ max enables >95% efficiency in 12V→1V server VRMs operating at 100A+ loads.
Fully characterized avalanche	460mJ single-pulse rating verified per JEDEC JESD24-11; supports reliable operation without external snubbers.
Capacitive-induced turn-on immunity	Validated against dv/dt-induced false triggering in high-side synchronous rectifier configurations.
100% R_G tested	Gate resistance screened to 0.3–2.5Ω range, ensuring consistent gate drive timing and reduced layout sensitivity.
Optimized body diode	trr = 48–75ns and Q_rr = 65–98nC support clean commutation in synchronous buck converters.

Applications

Telecom DC-DC Rectifier

Server CPU Voltage Regulator

Use Scenario: High-frequency isolated forward or LLC converter secondary-side synchronous rectification in 48V telecom systems.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier FET replacing Schottky diodes; switched complementary to primary-side MOSFET.

Use Value: Reduces conduction losses by >40% vs. 40V Schottky, enabling >94% system efficiency at 50A output.

Use Scenario: Multiphase buck converter delivering 1V@150A to modern x86 processors in datacenter servers.

IC Role / Device Role / Timing Role: High-current low-side switch in each phase leg; driven by dedicated gate driver with adaptive dead-time control.

Use Value: 6.5mΩ R_DS(on) limits per-phase conduction loss to <1.2W at 30A, easing thermal management on dense PCBs.

Industrial Motor Drive Inverter

High-Density POL Module

Use Scenario: Half-bridge output stage in compact 24V brushless DC motor controllers for factory automation.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter leg; operated with 100kHz PWM and active freewheeling.

Use Value: Robust avalanche rating (460mJ) withstands inductive kickback during rapid deceleration without clamping circuits.

Use Scenario: Integrated point-of-load module converting 5V/12V input to sub-1V outputs for FPGA or ASIC core rails.

IC Role / Device Role / Timing Role: Primary power switch in monolithic or hybrid buck regulator; co-packaged with controller and inductor.

Use Value: Ultra-low Q_g (29–44nC) and fast switching (t_r/t_f = 220/12ns) support >2MHz operation with minimal gate drive loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3711	Same die, but in smaller D2PAK-3L (TO-252) variant with identical R_DS(on), Q_g, and avalanche rating.	Limited to lower-power applications due to reduced thermal mass and higher R_θJA (60°C/W).	Select when board space is constrained and peak current ≤80A; verify thermal derating at 100°C ambient.
SiR872DP	25V TrenchFET with 5.0mΩ R_DS(on) @ 4.5V, lower Q_g (22nC), but no specified avalanche rating.	Better efficiency at light loads; unsuitable for unclamped inductive switching without external protection.	Prefer for high-frequency, low-dv/dt POL modules where avalanche stress is absent; avoid in telecom rectifiers.

Compared with IRLR3711 and SiR872DP, IRFR3711 delivers superior thermal performance via its larger D-Pak footprint and proven avalanche ruggedness-making it the preferred choice for high-reliability, high-current synchronous rectification where transient robustness is non-negotiable.

Availability

IRFR3711 is available at Aetrix Electronics and suitable for telecom power supplies, server voltage regulators, industrial motor drives, and high-density POL modules requiring stable component supply and long-term production continuity.

Supply support for IRFR3711 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with over 30 years of MOSFET innovation.

The IRFR3711 belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in synchronous rectification and DC-DC conversion applications.

FAQ

What is the maximum continuous drain current for IRFR3711 at 100°C case temperature?

The IRFR3711 supports 69A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D-Pak package and must be validated against actual PCB copper area and airflow conditions.

Does IRFR3711 require a gate resistor for stability in high-speed switching?

Yes-a gate resistor (typically 1–5Ω) is recommended to dampen ringing caused by gate loop inductance and prevent unintended turn-on due to Miller capacitance coupling. The device's 100% R_G-tested specification ensures predictable gate drive behavior when paired with standard gate drivers.

Can IRFR3711 be used in parallel configurations for higher current handling?

Yes, IRFR3711 supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing. Successful implementation requires matched gate drive paths, symmetrical PCB layout, and individual source resistors for current sensing and stability.

Is the body diode of IRFR3711 suitable for asynchronous operation?

The body diode is characterized for reverse recovery (t_rr = 48–75ns, Q_rr = 65–98nC) and rated for 110A pulsed source current, making it usable in asynchronous mode-but efficiency and EMI will be significantly worse than synchronous operation. Asynchronous use is discouraged above 100kHz.

IRFR3711 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2980 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 120W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3711 FAQ

1.How can I place an order for IRFR3711 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3711 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3711 reliable?

The price and inventory of IRFR3711 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3711 is usually 5 days.

3.What payment methods are accepted for IRFR3711?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3711 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3711?

IRFR3711 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3711 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3711?

For technical support, including IRFR3711 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3711 requirements.

6.How does Aetrix verify that IRFR3711 is sourced from the original manufacturer or authorized distributors?

All IRFR3711 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3711 meets industry standards.

7.What is the process for return or replacement of IRFR3711?

All IRFR3711 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3711, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3711 part is unused and in its original packaging.

Return procedure for IRFR3711:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…