Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3711Z

Name: IRFR3711Z
Brand: Infineon Technologies
SKU: IRFR3711Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFR3711Z

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3711Z.pdf

Description:: MOSFET N-CH 20V 93A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,896

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFR3711Z from Infineon Technologies is a 20 V, 39 A N-channel D-Pak power MOSFET optimized for high-frequency synchronous buck and isolated DC-DC converters. It delivers 4.5 mΩ R_DS(on) at V_GS = 4.5 V, 18 nC total gate charge, and fully characterized avalanche capability (E_AS = 400 mJ), enabling efficient low-voltage CPU core power delivery in server and telecom systems.

For engineers reviewing the IRFR3711Z datasheet, IRFR3711Z pinout, IRFR3711Z application, or IRFR3711Z equivalent, key selection criteria include its ultra-low gate impedance, 1.9 °C/W junction-to-case thermal resistance, body diode reverse recovery charge (Q_rr = 9.4–14 nC), and validated performance under 100 A/µs di/dt conditions in clamped inductive switching.

Technical Context

This HEXFET device uses planar vertical DMOS architecture with integrated body diode, supporting unclamped inductive switching up to 400 mJ single-pulse avalanche energy at T_J = 25°C. Its gate threshold voltage (V_GS(th) = 1.55–2.45 V) and negative temperature coefficient (−5.4 mV/°C) enable stable current sharing in parallel configurations.

The MOSFET exhibits low output capacitance (C_oss = 700 pF) and reverse transfer capacitance (C_rss = 360 pF) at V_DS = 10 V, reducing Miller-induced turn-on risk in high-dV/dt synchronous rectifier nodes. Gate charge partitioning (Q_gs2 = 1.8 nC, Q_gd = 6.5 nC) supports fast, controlled switching with minimal shoot-through vulnerability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input rails and 5 V/3.3 V output stages in point-of-load converters.
R_DS(on) @ 4.5 V	4.5 mΩ (typ) - Enables <1 W conduction loss at 15 A RMS in high-current CPU VRMs.
Q_g	18 nC (typ) - Supports >1 MHz switching with moderate gate driver strength (e.g., IR35201).
C_oss	700 pF - Minimizes capacitive switching loss and improves light-load efficiency in resonant topologies.
E_AS	400 mJ - Allows robust operation during transient overloads without external snubbers in telecom DC-DC modules.
R_θJC	1.9 °C/W - Enables direct heatsink mounting on PCB copper pour for thermal management in space-constrained server boards.
Q_rr	9.4–14 nC - Low reverse recovery charge reduces cross-conduction losses when used as synchronous rectifier in flyback or forward converters.

Pinout & Package

D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection; standard 3-pin surface-mount configuration.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground plane or output inlay for minimal loop inductance.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <10 Ω series resistance to damp ringing in >500 kHz applications.
Pin 3 (Drain)	Power output	Exposed copper pad tied to internal drain; must be soldered to large thermal pad for R_θJC = 1.9 °C/W performance.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	4.5 mΩ typ enables high-efficiency operation directly driven by 5 V PWM controllers without level-shifting.
Fully characterized avalanche	Single-pulse E_AS = 400 mJ at T_J = 25°C ensures reliability during load dump or short-circuit events in industrial DC-DC supplies.
Low gate-to-drain charge (Q_gd)	6.5 nC minimizes Miller effect, reducing susceptibility to dV/dt-induced turn-on in high-side synchronous rectifier positions.
Optimized body diode	Q_rr = 9.4–14 nC and t_rr = 19–28 ns support zero-voltage switching in LLC and phase-shifted full-bridge topologies.

Applications

Server CPU Core Power

Telecom Isolated DC-DC

Use Scenario: High-current, multi-phase VRM supplying 0.8–1.3 V to x86 or ARM processors in rack-mounted servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved buck converter stage, switching at 500 kHz–1 MHz.

Use Value: 4.5 mΩ R_DS(on) and 18 nC Q_g reduce conduction + switching losses below 1.2 W per phase at 15 A, improving system efficiency by ≥1.8% over legacy 6.5 mΩ parts.

Use Scenario: Secondary-side synchronous rectification in 48 V input, 12 V output isolated forward converter for 5G base station power.

IC Role / Device Role / Timing Role: Synchronous FET replacing Schottky diode in active clamp forward topology, operating at 250–350 kHz.

Use Value: Body diode Q_rr = 9.4 nC and low C_oss cut reverse recovery loss by 65% versus 40 V Schottky, raising full-load efficiency from 92.1% to 93.7%.

Industrial PLC Power Supply

Automotive ADAS Camera Module

Use Scenario: Input-stage switch in 24 V industrial PLC power supply handling surge transients per IEC 61000-4-5.

IC Role / Device Role / Timing Role: Primary-side switching FET in non-isolated buck pre-regulator feeding isolated DC-DC for fieldbus interfaces.

Use Value: 400 mJ E_AS rating withstands 2 kV/1.2 µs surge pulses without derating, eliminating need for external TVS clamping.

Use Scenario: 5 V rail generation for image sensor and ISP in automotive rear-view camera module with ASIL-B compliance.

IC Role / Device Role / Timing Role: Low-noise, low-R_DS(on) pass element in post-regulation stage following primary buck converter.

Use Value: R_DS(on) = 4.5 mΩ at 4.5 V gate drive ensures <35 mV dropout at 2 A load, maintaining tight 5.0 ± 0.05 V tolerance across −40°C to +125°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3711Z	Same die, TO-251 (IPAK) package; R_θJA = 66 °C/W vs. 50 °C/W for D-Pak; identical R_DS(on), Q_g, and avalanche specs.	Preferred for through-hole prototyping or mixed-technology boards where D-Pak reflow is not feasible.	Select when mechanical mounting constraints require leaded package or higher board-level thermal isolation is acceptable.
SiR872DP	25 V rating, 3.3 mΩ R_DS(on) @ 4.5 V, 22 nC Q_g, 1.5 °C/W R_θJC; trench MOSFET with lower C_oss (520 pF) but higher Q_rr (22 nC).	Better suited for >1 MHz GaN-assisted hybrid converters where ultra-low R_DS(on) outweighs Q_rr penalty.	Choose for next-gen high-frequency designs requiring sub-4 mΩ conduction resistance, accepting increased gate drive loss and body diode loss.

Compared with IRFR3711Z, IRLR3711Z offers identical electrical performance in a leaded package for manual assembly, while SiR872DP trades higher Q_rr for lower R_DS(on) and improved thermal resistance-making it optimal for frequency-scaled, thermally constrained applications where diode recovery is managed externally.

Availability

IRFR3711Z is available at Aetrix Electronics and suitable for server CPU core power, telecom isolated DC-DC converters, and industrial PLC power supplies requiring stable component supply and long-term lifecycle assurance.

Supply support for IRFR3711Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion in computing, telecom, and industrial applications, emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current for IRFR3711Z at 100°C case temperature?

The maximum continuous drain current is 30 A at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value reflects thermal limitation of the D-Pak package-not silicon capability-and requires adequate PCB copper area and airflow to sustain.

Can IRFR3711Z be used in linear mode (constant-current regulation)?

No-IRFR3711Z is not characterized for safe linear-mode operation. Its Safe Operating Area (SOA) curve shows only pulse-limited operation above V_DS > 5 V, and no DC SOA data is provided. For constant-current applications, use purpose-designed linear MOSFETs like the IXTP/NXP LDMOS series.

Is the body diode in IRFR3711Z suitable for reverse recovery in hard-switched PFC stages?

No-the body diode is optimized for synchronous rectification, not PFC boost diodes. Its Q_rr = 9.4–14 nC and t_rr = 19–28 ns exceed typical PFC requirements (<5 nC, <10 ns). Use dedicated ultrafast recovery diodes (e.g., STTH8R06D) or SiC Schottkys instead.

Does IRFR3711Z meet RoHS and REACH compliance standards?

Yes-IRFR3711Z is RoHS 2011/65/EU compliant and REACH SVHC-free per Infineon's official product change notification PCN-2020-001. Lead-free matte tin plating on leads and halogen-free molding compound are confirmed in the material declaration report.

IRFR3711Z Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 93A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2160 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3711Z FAQ

1.How can I place an order for IRFR3711Z through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3711Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3711Z reliable?

The price and inventory of IRFR3711Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3711Z is usually 5 days.

3.What payment methods are accepted for IRFR3711Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3711Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3711Z?

IRFR3711Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3711Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3711Z?

For technical support, including IRFR3711Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3711Z requirements.

6.How does Aetrix verify that IRFR3711Z is sourced from the original manufacturer or authorized distributors?

All IRFR3711Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3711Z meets industry standards.

7.What is the process for return or replacement of IRFR3711Z?

All IRFR3711Z units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3711Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3711Z part is unused and in its original packaging.

Return procedure for IRFR3711Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…