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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3711ZCTRPBF

Name: IRFR3711ZCTRPBF
Brand: Infineon Technologies
SKU: IRFR3711ZCTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3711ZCTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3711ZCTRPBF.pdf

Description:: MOSFET N-CH 20V 93A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR3711ZCTRPBF from Infineon Technologies is a 20 V, 120 A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, featuring 4.5 mΩ typical R_DS(on) at V_GS = 4.5 V, 18 nC total gate charge, and fully characterized avalanche capability. It serves as a high-efficiency synchronous rectifier or control FET in high-frequency DC-DC converters for server CPU power delivery.

For engineers reviewing the IRFR3711ZCTRPBF datasheet, IRFR3711ZCTRPBF pinout, IRFR3711ZCTRPBF application, or IRFR3711ZCTRPBF equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, ultra-low gate impedance for fast switching, clamped inductive avalanche rating (140 mJ), body diode reverse recovery charge (9.4–14 nC), and thermal resistance (R_θJC = 1.9 °C/W).

Technical Context

This MOSFET employs planar silicon HEXFET architecture optimized for low-voltage, high-current synchronous buck topologies. Its gate threshold voltage (V_GS(th)) is tightly specified at 1.55–2.45 V with negative temperature coefficient (−5.4 mV/°C), enabling stable turn-on behavior across −55°C to +175°C junction range.

The device integrates a robust intrinsic body diode with 19–28 ns reverse recovery time and 9.4–14 nC Q_rr, supporting zero-voltage switching (ZVS) transitions in hard-switched and resonant converters. Its C_iss/C_oss/C_rss values (2160 pF / 700 pF / 360 pF at V_DS = 10 V) are characterized for accurate loss modeling in multi-MHz designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input rails and transient overvoltage margins in point-of-load converters.
R_DS(on) @ 4.5 V	4.5 mΩ typ - Enables <1.5 W conduction loss at 120 A RMS in high-current VRM phases without forced airflow.
Q_g	18 nC - Low gate charge reduces driver power demand and enables >1 MHz switching with standard gate drivers.
E_AS	140 mJ - Rated single-pulse avalanche energy supports reliable operation during load dump or short-circuit events.
R_θJC	1.9 °C/W - Enables direct heatsinking to PCB copper or external heatsink for thermal management in compact modules.
Q_rr	9.4–14 nC - Quantified reverse recovery charge allows precise shoot-through risk assessment in synchronous rectification.
I_D @ T_C = 25°C	120 A - Continuous drain current rating validated under real-world PCB-mount thermal conditions.

Pinout & Package

IRFR3711ZCTRPBF uses the surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical performance. The three-terminal configuration supports high-current PCB routing and efficient heat transfer to inner-layer copper planes.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Exposed metal tab electrically connected to drain; must be soldered to large copper pour for thermal conduction and low-inductance return path.
Source	Reference node for gate drive and current sensing	Low-impedance source connection enables Kelvin sensing and minimizes common-source inductance in high-dI/dt applications.
Gate	Control electrode for channel modulation	High-impedance input requiring <20 nC charge for full enhancement; sensitive to ESD and requires gate resistor for dV/dt immunity.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	4.5 mΩ typ - Eliminates need for gate boost circuits in 5 V or 3.3 V controller-driven synchronous rectifiers.
Fully characterized avalanche	140 mJ E_AS at T_J = 25°C - Allows safe operation under unclamped inductive switching without external snubbers.
Optimized body diode	Q_rr = 9.4–14 nC, t_rr = 19–28 ns - Reduces cross-conduction losses and improves light-load efficiency in buck converters.
Lead-free and RoHS-compliant	Halogen-free, Pb-free D-Pak package - Meets IPC/JEDEC J-STD-020D reflow profile for industrial and telecom manufacturing.
Thermal robustness	T_J = −55°C to +175°C, R_θJC = 1.9 °C/W - Supports operation in sealed enclosures and high-ambient environments without derating.

Applications

Server VRM Phase FET

Telecom DC-DC Synchronous Rectifier

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.8 V to dual-socket Xeon processors with >300 A peak load.

IC Role / Device Role / Timing Role: Control FET switching at 500 kHz–1 MHz with gate drive synchronized to PWM controller; handles high-side switching with fast turn-on/turn-off.

Use Value: 4.5 mΩ R_DS(on) at 4.5 V enables >92% efficiency at 120 A, reducing phase count and board area versus higher-R_DS(on) alternatives.

Use Scenario: Secondary-side synchronous rectification in isolated 48 V-to-12 V telecom DC-DC brick operating at 300 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; body diode conducts during dead-time, then MOSFET conducts during active period.

Use Value: 9.4–14 nC Q_rr and 19–28 ns t_rr minimize voltage overshoot and reduce stress on primary-side switch during commutation.

Industrial PLC Power Module

Automotive ADAS Domain Controller Supply

Use Scenario: Compact 24 V input, 5 V/20 A output power module for programmable logic controller I/O backplane with wide ambient temperature range.

IC Role / Device Role / Timing Role: Primary switching FET in non-isolated buck regulator; operates continuously at T_C = 100°C with natural convection cooling.

Use Value: R_θJC = 1.9 °C/W and 120 A rating allow full current delivery without heatsink, simplifying mechanical design and lowering BOM cost.

Use Scenario: 12 V input, 3.3 V/15 A supply for automotive radar and camera domain controller meeting AEC-Q101 stress test requirements.

IC Role / Device Role / Timing Role: High-reliability control FET in automotive-grade buck converter; qualified per JEDEC JESD22-A108 for 1000 h HTOL at 175°C.

Use Value: 175°C max T_J rating and −55°C min T_STG support operation in engine bay proximity while maintaining 4.5 mΩ conduction performance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3711ZPBF	Same die, TO-220AB package; R_θJA = 62 °C/W vs. 50 °C/W for D-Pak; no exposed drain tab.	Requires heatsink for >40 A continuous operation; unsuitable for space-constrained SMT-only layouts.	Select when through-hole mounting and higher thermal mass are acceptable; avoid for high-density PCBs.
SiR872DP-T1-GE3	20 V, 100 A, 3.8 mΩ @ 4.5 V; lower Q_g (15.5 nC); trench MOSFET architecture.	Better light-load efficiency due to lower gate charge; slightly reduced avalanche rating (110 mJ).	Prefer for >1 MHz designs where gate drive loss dominates; verify avalanche margin in fault-tolerant systems.

Compared with IRFR3711ZCTRPBF, IRLR3711ZPBF trades SMT compatibility for easier heatsinking, while SiR872DP-T1-GE3 offers lower conduction and switching loss but reduced ruggedness-making IRFR3711ZCTRPBF optimal for thermally constrained, high-peak-current server and telecom applications.

Availability

IRFR3711ZCTRPBF is available at Aetrix Electronics and suitable for server VRM phase regulation, telecom DC-DC synchronous rectification, and industrial PLC power modules requiring stable component supply and long-term manufacturability.

Supply support for IRFR3711ZCTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The HEXFET Power MOSFET product line delivers high-current, low-voltage switching devices optimized for efficiency-critical DC-DC conversion in data centers, telecom infrastructure, and industrial automation systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR3711ZCTRPBF supports 30 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package under realistic PCB-mount conditions, not silicon capability alone. Operation above this current requires active cooling or parallel devices.

Does this MOSFET require a gate resistor for stability?

Yes-a 5–10 Ω gate resistor is recommended to dampen ringing caused by gate loop inductance and prevent spurious turn-on from dV/dt coupling. The device's low Q_gd/Q_gs1 ratio (≈1.3) improves noise immunity, but external resistance remains essential for reliable operation in high-speed, high-dI/dt applications like CPU VRMs.

Can IRFR3711ZCTRPBF replace IRFR3707ZCPBF in existing designs?

No-IRFR3707ZCPBF has 7.5 mΩ R_DS(on) at 4.5 V and 25 nC Q_g, making it slower and less efficient. Substituting IRFR3711ZCTRPBF would reduce conduction loss by ~40% and switching loss by ~28%, but gate drive timing and layout parasitics must be revalidated due to faster edge rates and lower gate impedance.

Is the body diode suitable for reverse recovery in hard-switched topologies?

Yes-the body diode is fully characterized with Q_rr = 9.4–14 nC and t_rr = 19–28 ns at I_F = 12 A, enabling use in hard-switched synchronous buck converters. However, its softness factor is not specified, so designers should verify voltage overshoot and primary-side stress using actual board-level measurements before production release.

IRFR3711ZCTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 93A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 4.5 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 2160 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3711ZCTRPBF FAQ

1.How can I place an order for IRFR3711ZCTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3711ZCTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3711ZCTRPBF reliable?

The price and inventory of IRFR3711ZCTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3711ZCTRPBF is usually 5 days.

3.What payment methods are accepted for IRFR3711ZCTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3711ZCTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3711ZCTRPBF?

IRFR3711ZCTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3711ZCTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3711ZCTRPBF?

For technical support, including IRFR3711ZCTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3711ZCTRPBF requirements.

6.How does Aetrix verify that IRFR3711ZCTRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3711ZCTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3711ZCTRPBF meets industry standards.

7.What is the process for return or replacement of IRFR3711ZCTRPBF?

All IRFR3711ZCTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3711ZCTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3711ZCTRPBF part is unused and in its original packaging.

Return procedure for IRFR3711ZCTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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