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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3711ZPBF

Name: IRFR3711ZPBF
Brand: Infineon Technologies
SKU: IRFR3711ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3711ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3711ZPBF.pdf

Description:: MOSFET N-CH 20V 93A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR3711ZPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET Power MOSFET in D-Pak package, rated for 20 V V_DS, 4.5 mΩ R_DS(on) at V_GS = 10 V, and 39 A continuous drain current at T_C = 25°C. It serves as a high-efficiency synchronous rectifier or control FET in high-frequency DC-DC converters for CPU core power and telecom systems.

For engineers reviewing the IRFR3711ZPBF datasheet, IRFR3711ZPBF pinout, IRFR3711ZPBF application, or IRFR3711ZPBF equivalent, key selection criteria include its ultra-low gate impedance (Q_g = 18 nC), fully characterized avalanche capability (E_AS = 140 mJ), and optimized body diode recovery (Q_rr = 9.4–14 nC, t_rr = 19–28 ns) for hard-switched synchronous buck topologies.

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-free structure to achieve low R_DS(on) while maintaining robust safe operating area (SOA) up to 100 A at V_DS = 10 V in single-pulse mode. Its gate threshold voltage (V_GS(th) = 1.55–2.45 V) enables reliable 4.5 V logic-level drive compatibility.

The device features fully specified unclamped inductive switching (UIS) performance, with linear thermal derating (0.53 W/°C above 25°C case temperature) and junction-to-case thermal resistance of 1.9 °C/W. Its Crss/Ciss ratio (360 pF / 2160 pF ≈ 0.17) supports stable high-speed switching with reduced Cdv/dt turn-on risk in synchronous rectifier configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input rails and 5 V/3.3 V output stages in point-of-load converters
R_DS(on) max @ V_GS = 10 V	5.7 mΩ - Enables <100 mW conduction loss at 15 A RMS in 48 V→12 V isolated DC-DC secondaries
Q_g	18 nC - Low total gate charge reduces driver power demand and enables >1 MHz operation with standard gate drivers
I_D @ T_C = 25°C	39 A - Supports high-current synchronous rectification in 100–200 W server VRMs without forced airflow
E_AS	140 mJ - Confirmed single-pulse avalanche energy allows reliable operation under transient overvoltage conditions
t_rr & Q_rr	19–28 ns / 9.4–14 nC - Fast, low-charge body diode minimizes cross-conduction losses during dead-time in synchronous buck converters
R_θJC	1.9 °C/W - Enables direct heatsinking via PCB copper pour or clip-mounting for thermal management in compact modules

Pinout & Package

IRFR3711ZPBF uses the industry-standard D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 6.73 mm × 6.22 mm × 2.39 mm and is lead-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Common return path for load current; electrically tied to PCB ground plane for low-inductance layout
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate requiring <100 nA leakage; sensitive to ESD and layout parasitics
Pin 3 (Drain)	Power output (D)	Exposed metal pad on underside - primary thermal path and high-current drain connection

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V V_GS	Enables full enhancement with 3.3 V logic-level gate drivers in space-constrained embedded power supplies
Fully characterized avalanche voltage and current	Guarantees survivability under inductive switching stress without external snubbers in non-isolated topologies
Low gate-to-drain charge (Q_gd)	6.5 nC - Reduces Miller effect and improves noise immunity in high-dV/dt synchronous rectifier nodes
Optimized body diode reverse recovery	Q_rr = 9.4–14 nC ensures minimal shoot-through risk and low switching loss when used as freewheeling device
Lead-free and RoHS-compliant construction	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for standard reflow assembly without baking

Applications

Server CPU Core Voltage Regulator

Telecom 48 V→12 V Isolated DC-DC

Use Scenario: High-current, multi-phase buck converter delivering up to 200 A at 1.0–1.8 V to modern x86 processors.

IC Role / Device Role: Synchronous rectifier FET in low-side position, replacing Schottky diodes to reduce conduction loss.

Use Value: 4.5 mΩ R_DS(on) cuts rectifier loss by >60% vs. 0.5 V Schottky, enabling >94% efficiency at 150 A load.

Use Scenario: Secondary-side synchronous rectification in forward or LLC resonant converters for telecom base stations.

IC Role / Device Role: Output rectifier in 48 V input, 12 V/30 A output isolated DC-DC module.

Use Value: Low Q_rr and fast t_rr minimize cross-conduction loss during dead-time, improving light-load efficiency by 2–3%.

Industrial PLC I/O Power Supply

Automotive ADAS Domain Controller Power

Use Scenario: Compact 24 V→3.3 V/5 V auxiliary supply powering fieldbus interfaces and sensor signal conditioning.

IC Role / Device Role: Control FET in non-isolated buck regulator with integrated controller IC.

Use Value: 1.55–2.45 V V_GS(th) ensures clean turn-on with 3.3 V microcontroller GPIO, eliminating level-shifter need.

Use Scenario: Point-of-load regulation for radar processor SoCs in 12 V automotive battery-fed domain controllers.

IC Role / Device Role: High-side switch in pre-regulator stage feeding downstream PMICs.

Use Value: 140 mJ E_AS withstands load dump transients up to ISO 7637-2 Pulse 5a without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3711ZPBF	Same die, I-Pak (TO-220AB) package; higher R_θJA (79 °C/W vs. 50 °C/W) and larger footprint	Better suited for through-hole prototyping or lower-density boards where heatsink mounting is preferred	Select when mechanical mounting constraints favor TO-220 or when higher thermal mass is needed for intermittent surge handling
SI7850DP-T1-GE3	20 V, 3.8 mΩ R_DS(on), but Q_g = 25 nC and Q_rr = 22 nC - higher switching loss and slower body diode	Acceptable in fixed-frequency <500 kHz designs where conduction loss dominates	Prefer only if board layout cannot accommodate IRFR3711ZPBF's gate drive timing or if cost-per-watt favors Vishay's pricing tier

Compared with IRLR3711ZPBF and SI7850DP-T1-GE3, IRFR3711ZPBF delivers superior high-frequency efficiency due to its lower Q_g/Q_rr ratio and D-Pak thermal performance, making it optimal for >1 MHz synchronous buck converters where switching loss and thermal density are critical.

Availability

IRFR3711ZPBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC modules, and industrial PLC power supplies requiring stable component supply and long-term production continuity.

Supply support for IRFR3711ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line was originally developed by International Rectifier and continues under Infineon to deliver high-performance, ruggedized silicon solutions for high-efficiency power conversion in computing, telecom, and industrial applications.

FAQ

What is the maximum recommended gate drive voltage for IRFR3711ZPBF?

The absolute maximum V_GS rating is ±20 V, but the device is fully characterized and optimized for 10 V gate drive. Operation at 4.5 V provides full enhancement with R_DS(on) = 6.2 mΩ (max), while 12 V drive yields lowest R_DS(on) (4.5 mΩ typ.) without increasing gate oxide stress or leakage beyond specification limits.

Can IRFR3711ZPBF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (13 mV/°C ∆BVDSS/∆T_J) ensures inherent current sharing. Parallel operation requires matched gate drive loop inductance and symmetrical PCB layout; typical designs use 2–4 devices per phase with <5% current imbalance at full load and 100°C junction temperature.

Does IRFR3711ZPBF require a gate resistor for stability?

A series gate resistor (1–10 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent spurious turn-on from dV/dt coupling. The low Q_gd/Q_gs1 ratio (6.5 nC / 5.1 nC ≈ 1.27) makes it less susceptible than many alternatives, but layout-dependent oscillation remains possible without proper gate termination.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the intrinsic body diode is fully specified with V_SD ≤ 1.0 V at 12 A and t_rr ≤ 28 ns. It supports continuous conduction mode (CCM) operation in synchronous buck converters, though best practice limits reverse recovery stress by minimizing dead-time and using gate drive slew rate control to reduce di/dt-induced voltage spikes.

IRFR3711ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 93A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2160 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3711ZPBF FAQ

1.How can I place an order for IRFR3711ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3711ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3711ZPBF reliable?

The price and inventory of IRFR3711ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3711ZPBF is usually 5 days.

3.What payment methods are accepted for IRFR3711ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3711ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3711ZPBF?

IRFR3711ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3711ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3711ZPBF?

For technical support, including IRFR3711ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3711ZPBF requirements.

6.How does Aetrix verify that IRFR3711ZPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3711ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3711ZPBF meets industry standards.

7.What is the process for return or replacement of IRFR3711ZPBF?

All IRFR3711ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3711ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3711ZPBF part is unused and in its original packaging.

Return procedure for IRFR3711ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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