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Infineon Technologies IRFR3711ZTR
- Part No.:
- IRFR3711ZTR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR3711ZTR.pdf
- Description:
- MOSFET N-CH 20V 93A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,434
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Product details
Overview
IRFR3711ZTR from Infineon Technologies is a 20 V, 39 A, D-Pak N-channel HEXFET Power MOSFET optimized for high-frequency synchronous buck converters in CPU power delivery and telecom DC-DC applications. It features 4.5 mΩ RDS(on) at VGS = 10 V, 18 nC total gate charge, and fully characterized avalanche capability (EAS = 400 mJ at TJ = 25°C).
For engineers reviewing the IRFR3711ZTR datasheet, IRFR3711ZTR pinout, IRFR3711ZTR application, or IRFR3711ZTR equivalent, key selection criteria include low RDS(on) at 4.5 V drive, ultra-low gate impedance for fast switching, and robust unclamped inductive switching performance in high-dV/dt synchronous rectifier nodes.
Technical Context
This MOSFET employs a trench-gated silicon process to achieve sub-5 mΩ on-resistance with minimal gate charge trade-off. Its low Qgd/Qgs1 ratio (6.5 nC / 5.1 nC ≈ 1.27) reduces susceptibility to dV/dt-induced turn-on in synchronous FET positions.
The device integrates a robust body diode with 19 ns reverse recovery time and 9.4 nC Qrr, enabling efficient hard-switched operation without external Schottky supplementation in mid-power isolated DC-DC topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Supports 12 V input rails with margin for transient overshoot in point-of-load converters |
| RDS(on) max @ 10 V | 5.7 mΩ - Enables <1 W conduction loss at 30 A RMS in 48 V–12 V step-down stages |
| Qg total | 18 nC - Allows full switching at 1 MHz with ≤2 A peak gate drive current using standard controllers |
| EAS | 400 mJ - Withstands single-pulse inductive energy up to 7.7 A × 10 V × 5.2 µs in unclamped tests |
| Qrr | 9.4 nC - Limits cross-conduction loss during dead-time in synchronous rectification |
| RθJC | 1.9 °C/W - Enables direct heatsinking to PCB copper or external metal slug for thermal management |
Pinout & Package
D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Gate (G), Drain (D), Source (S).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Control electrode | Accepts 0–10 V logic-level drive; low input capacitance (Ciss = 2160 pF) minimizes driver loading |
| D | High-side current path | Internally connected to exposed copper pad; must be soldered to ≥1 in² 2-oz copper for RθJC spec |
| S | Reference node | Common return for gate drive and load current; low-inductance layout critical for dV/dt immunity |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5 V | 6.2 mΩ - Enables use with 5 V gate drivers in cost-sensitive telecom modules |
| Low Qgd/Qgs1 ratio | 1.27 - Reduces risk of parasitic turn-on when placed as synchronous rectifier in high-dV/dt nodes |
| Characterized avalanche energy | EAS = 400 mJ - Eliminates need for external snubbers in non-isolated buck converters under overload |
| Fast body diode recovery | trr = 19 ns - Minimizes shoot-through overlap during dead-time in synchronous FET operation |
Applications
| Server VRM Power Stage | Telecom 48 V–12 V DC-DC |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying core voltage to Xeon or EPYC processors. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 300–600 kHz with 100 ns dead-time. Use Value: 4.5 mΩ RDS(on) cuts conduction loss by 35% vs. legacy 8 mΩ devices, reducing thermal stress on 6-layer PCBs. | Use Scenario: Isolated forward or active-clamp forward converter in 1RU telecom power supply. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier driven by transformer-coupled gate signal. Use Value: 18 nC Qg allows clean 500 kHz switching with minimal gate drive loss, improving efficiency above 94% at full load. |
| Industrial PLC Power Module | Automotive ADAS Domain Controller |
Use Scenario: Non-isolated buck regulator powering FPGA I/O banks and memory interfaces in programmable logic controllers. IC Role / Device Role / Timing Role: High-side switch in 200 kHz fixed-frequency converter with overcurrent protection. Use Value: Fully characterized avalanche rating enables reliable operation during short-circuit events without derating. | Use Scenario: Point-of-load regulator for radar processor SoCs in 12 V automotive systems. IC Role / Device Role / Timing Role: Low-side FET in dual-phase buck delivering 25 A at 1.1 V with tight transient response. Use Value: 1.9 °C/W RθJC supports junction temperature control below 125°C under 85°C ambient with passive cooling only. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR3711ZPBF | Same die, TO-220AB package; RθJA = 62 °C/W vs. 50 °C/W for D-Pak | Better suited for through-hole prototyping or lower-frequency designs where heatsink mounting is feasible | Select when mechanical mounting constraints favor leaded packages or when higher thermal mass is needed for pulse loads |
| STL220N4F7AG | 40 V rating, 2.2 mΩ RDS(on), 33 nC Qg; different gate threshold (1.5 V typ) | Higher voltage margin but slower switching; requires gate driver capable of 3.3 V logic compatibility | Choose for 24 V input systems requiring extended bus fault tolerance, accepting 15% higher switching loss |
Compared with IRFR3711ZTR, IRLR3711ZPBF trades surface-mount convenience for improved heatsinking flexibility, while STL220N4F7AG offers lower on-resistance at the cost of higher gate charge and reduced dV/dt immunity-making it less suitable for high-frequency synchronous rectification.
Availability
IRFR3711ZTR is available at Aetrix Electronics and suitable for server VRM power stages, telecom 48 V–12 V DC-DC converters, and industrial PLC power modules requiring stable component supply and long-term production continuity.
Supply support for IRFR3711ZTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The HEXFET Power MOSFET product line targets high-efficiency, high-frequency power conversion in computing, telecom, and industrial applications-designed specifically for synchronous rectification and low-voltage, high-current switching.
FAQ
Is IRFR3711ZTR suitable for 5 V gate drive in synchronous buck topologies?
Yes. The device specifies RDS(on) = 6.2 mΩ at VGS = 4.5 V and 12 A, confirming robust enhancement-mode operation with standard 5 V logic drivers. Its 2.0 V typical VGS(th) ensures reliable turn-on with margin across temperature and process variation.
What is the maximum continuous drain current at 100°C case temperature?
The datasheet specifies ID = 30 A at TC = 25°C and derates linearly to 19 A at TC = 100°C, based on the 1.9 °C/W RθJC and 175°C maximum junction temperature. This assumes proper PCB copper area and no additional heatsink.
Does IRFR3711ZTR have a specified avalanche SOA curve?
Yes. Figure 8 shows the maximum safe operating area including avalanche-limited region. Single-pulse EAS is tested per JEDEC JESD24-1, with 400 mJ validated at TJ = 25°C and 7.7 A drain current, supporting unclamped inductive switching in non-isolated topologies.
Can IRFR3711ZTR replace IRFR3707Z in existing designs?
No. IRFR3707Z has 7.8 mΩ RDS(on) at 10 V and 25 nC Qg, while IRFR3711ZTR delivers 4.5 mΩ and 18 nC-offering lower conduction loss but requiring gate drive redesign for faster switching. Layout changes may be needed to manage increased dV/dt stress.
IRFR3711ZTR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.7mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2160 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 79W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR3711ZTR FAQ
1.How can I place an order for IRFR3711ZTR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR3711ZTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR3711ZTR reliable?
The price and inventory of IRFR3711ZTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3711ZTR is usually 5 days.
3.What payment methods are accepted for IRFR3711ZTR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3711ZTR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR3711ZTR?
IRFR3711ZTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR3711ZTR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR3711ZTR?
For technical support, including IRFR3711ZTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3711ZTR requirements.
6.How does Aetrix verify that IRFR3711ZTR is sourced from the original manufacturer or authorized distributors?
All IRFR3711ZTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3711ZTR meets industry standards.
7.What is the process for return or replacement of IRFR3711ZTR?
All IRFR3711ZTR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3711ZTR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR3711ZTR part is unused and in its original packaging.
Return procedure for IRFR3711ZTR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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