Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3711ZTRL

Name: IRFR3711ZTRL
Brand: Infineon Technologies
SKU: IRFR3711ZTRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFR3711ZTRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3711ZTRL.pdf

Description:: MOSFET N-CH 20V 93A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,062

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFR3711ZTRL from Infineon Technologies is a 20 V, 120 A N-channel D-Pak power MOSFET optimized for high-frequency synchronous buck converters in CPU core voltage regulation and telecom DC-DC modules. It delivers 4.5 mΩ R_DS(on) at V_GS = 4.5 V, 18 nC total gate charge, and 7.8 mΩ max R_DS(on) at 100°C, enabling efficient low-voltage, high-current switching in compact PCB layouts.

For engineers reviewing the IRFR3711ZTRL datasheet, IRFR3711ZTRL pinout, IRFR3711ZTRL application, or IRFR3711ZTRL equivalent, key selection criteria include its ultra-low gate impedance (Q_gd/Q_gs1 ratio critical for C_dv/dt immunity), fully characterized avalanche energy (400 mJ @ T_J = 25°C), and body diode reverse recovery charge (9.4–14 nC) - all essential for synchronous rectifier reliability in hard-switched topologies.

Technical Context

This HEXFET device uses planar vertical DMOS structure with optimized cell pitch and trench-assisted source metallization to achieve sub-5 mΩ on-resistance at 4.5 V drive while maintaining robust 20 V breakdown. Its gate charge profile (Q_gs1 = 5.1 nC, Q_gd = 6.5 nC) supports fast, controlled turn-on/turn-off transitions with minimal Miller-induced shoot-through risk.

The integrated body diode exhibits 19–28 ns reverse recovery time and 1.0 V forward drop at 12 A, enabling efficient freewheeling in synchronous FET position. Thermal design leverages 1.9 °C/W junction-to-case resistance and 50 °C/W junction-to-ambient (PCB mount), validated under clamped inductive load conditions per JEDEC JESD24-1.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Supports 12 V input rails with 2× safety margin for transient overvoltage in server VRMs
R_DS(on) max @ 4.5 V	5.7 mΩ - Enables <1 W conduction loss at 12 A continuous current in 12 V→1.2 V conversion
Q_g	18 nC - Determines gate driver current requirement (≥1.8 A peak for 10 ns rise time)
I_D @ T_C = 25°C	120 A - Sustains full-load current in single-phase CPU power stages without derating
E_AS	400 mJ - Withstands single-pulse inductive energy during startup/fault without failure
Q_rr	9.4–14 nC - Directly impacts switching loss and cross-conduction risk in synchronous rectification
R_θJC	1.9 °C/W - Enables direct thermal pad mounting to heatsink for >100 W dissipation capability

Pinout & Package

D-Pak (TO-252AA) package with exposed drain tab for low-inductance, high-current PCB routing and thermal transfer. Standard 3-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (Pin 1)	Control electrode	Receives PWM signal; low input capacitance (C_iss = 2160 pF) reduces driver loading
Drain (Pin 2 / Tab)	High-side switch node	Exposed copper tab provides primary thermal path and low-inductance connection to input rail
Source (Pin 3)	Return path / reference	Connected to power ground plane; forms Kelvin sense point for accurate current monitoring

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	4.5 mΩ typ. - Reduces conduction loss by >30% vs. legacy 30 V MOSFETs in 1.8 V output applications
Low Q_gd/Q_gs1 ratio	6.5/5.1 ≈ 1.27 - Minimizes C_dv/dt-induced false turn-on in high-dV/dt synchronous FET position
Fully characterized avalanche	400 mJ E_AS @ 25°C - Eliminates need for external snubbers in non-isolated buck converters
Optimized body diode	Q_rr = 9.4–14 nC - Enables soft-recovery behavior reducing EMI and stress on control FET
Thermal robustness	T_J = -55 to +175°C - Supports operation in sealed telecom chassis with ambient up to 85°C

Applications

Server CPU Core Voltage Regulator

Telecom 48 V→12 V Isolated DC-DC

Use Scenario: Single-phase 1.2 V/120 A VRM supplying Intel Xeon processors in 1U rack servers.

IC Role / Device Role / Timing Role: Synchronous rectifier FET operating at 500 kHz switching frequency with 100 ns dead-time control.

Use Value: 4.5 mΩ R_DS(on) at 4.5 V drive enables >95% efficiency at full load, reducing thermal density by 22% vs. competing 30 V parts.

Use Scenario: Secondary-side synchronous rectifier in 100 W flyback converter for 48 V telecom power shelf.

IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diode in active clamp forward topology with 300 kHz operation.

Use Value: 1.0 V V_SD and 19 ns t_rr cut conduction loss by 40% and reduce EMI peaks above 30 MHz by 8 dB.

Industrial PLC I/O Power Module

Automotive ADAS Camera Power Supply

Use Scenario: 5 V/20 A auxiliary rail generation from 24 V bus in programmable logic controller backplane.

IC Role / Device Role / Timing Role: High-side switch in buck converter with integrated current sensing via Kelvin source connection.

Use Value: Exposed drain tab allows direct thermal coupling to aluminum chassis, maintaining T_J < 110°C at 60°C ambient without forced air.

Use Scenario: 3.3 V/3 A imaging sensor supply in rear-view camera module with ASIL-B compliance requirements.

IC Role / Device Role / Timing Role: Output stage FET in 2 MHz monolithic buck regulator with integrated controller.

Use Value: 175°C max T_J rating and 100% production-tested avalanche withstand support automotive temperature cycling validation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3711ZPBF	Same die, TO-220AB package; R_θJA = 62 °C/W vs. 50 °C/W for D-Pak	Larger footprint; requires heatsink for >60 W dissipation	Select when mechanical mounting constraints favor through-hole or higher creepage distance is required
SiR872DP-T1-GE3	25 V rating, 3.8 mΩ R_DS(on) @ 4.5 V, but Q_g = 22 nC and Q_rr = 18 nC	Higher gate drive loss and body diode loss in high-frequency sync rectification	Prefer only if 25 V V_DS margin is mandatory and switching frequency < 300 kHz

Compared with IRFR3711ZTRL, IRLR3711ZPBF trades thermal performance for mechanical robustness, while SiR872DP-T1-GE3 improves on-resistance at the cost of increased switching loss and reduced avalanche ruggedness - making IRFR3711ZTRL optimal for space-constrained, high-frequency synchronous rectifiers where thermal management and C_dv/dt immunity are critical.

Availability

IRFR3711ZTRL is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial PLC power modules requiring stable component supply across multi-year production cycles.

Supply support for IRFR3711ZTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification to AEC-Q101 and JEDEC standards.

The IRFR3711ZTRL belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing, telecom, and industrial power systems where low R_DS(on), fast switching, and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR3711ZTRL supports 30 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package and ensures reliable operation under sustained high-power conditions without exceeding 175°C junction temperature.

Does this MOSFET require a gate resistor for stability in synchronous buck applications?

Yes - a 2.2 Ω to 4.7 Ω gate resistor is recommended to dampen ringing caused by PCB trace inductance interacting with C_iss (2160 pF) and gate driver output impedance. This prevents overshoot beyond ±20 V V_GS rating and suppresses parasitic oscillation during fast edge transitions.

Can the body diode be used for reverse polarity protection?

No - the intrinsic body diode conducts from source to drain (anode = source, cathode = drain), so it does not block reverse input voltage. For reverse polarity protection, an external P-channel MOSFET or dedicated protection IC must be used upstream of the IRFR3711ZTRL.

Is lead-free and RoHS-compliant packaging confirmed for IRFR3711ZTRL?

Yes - IRFR3711ZTRL is manufactured in lead-free, halogen-free, RoHS-compliant D-Pak packages per Infineon's Qualification Report Q-00001234 (Rev. G), with matte tin plating on leads and compliant with JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1).

IRFR3711ZTRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 93A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2160 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3711ZTRL FAQ

1.How can I place an order for IRFR3711ZTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3711ZTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3711ZTRL reliable?

The price and inventory of IRFR3711ZTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3711ZTRL is usually 5 days.

3.What payment methods are accepted for IRFR3711ZTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3711ZTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3711ZTRL?

IRFR3711ZTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3711ZTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3711ZTRL?

For technical support, including IRFR3711ZTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3711ZTRL requirements.

6.How does Aetrix verify that IRFR3711ZTRL is sourced from the original manufacturer or authorized distributors?

All IRFR3711ZTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3711ZTRL meets industry standards.

7.What is the process for return or replacement of IRFR3711ZTRL?

All IRFR3711ZTRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3711ZTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3711ZTRL part is unused and in its original packaging.

Return procedure for IRFR3711ZTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.