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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3711ZTRPBF

Name: IRFR3711ZTRPBF
Brand: Infineon Technologies
SKU: IRFR3711ZTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3711ZTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3711ZTRPBF.pdf

Description:: MOSFET N-CH 20V 93A DPAK

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Product details

Overview

IRFR3711ZTRPBF from Infineon Technologies is a 20 V, 120 A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, featuring 4.5 mΩ typical R_DS(on) at V_GS = 10 V and 18 nC total gate charge, optimized for high-frequency synchronous buck converters in CPU power delivery.

For engineers reviewing the IRFR3711ZTRPBF datasheet, IRFR3711ZTRPBF pinout, IRFR3711ZTRPBF application, or IRFR3711ZTRPBF equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, fully characterized avalanche capability, ultra-low gate impedance, and body diode recovery performance (Q_rr = 9.4–14 nC, t_rr = 19–28 ns) for synchronous rectification in telecom DC-DC systems.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free design to achieve ultra-low on-resistance while maintaining robust unclamped inductive switching (UIS) capability-E_AS = 600 mJ at T_J = 25°C. Its gate threshold voltage (V_GS(th) = 1.55–2.45 V) and negative temperature coefficient (−5.4 mV/°C) support stable parallel operation.

The device integrates a fast, low-V_SD (≤1.0 V) intrinsic body diode with controlled reverse recovery (Q_rr, t_rr) to minimize shoot-through risk in synchronous topologies. Gate charge profile (Q_gd/Q_gs1 ratio minimized) reduces susceptibility to dv/dt-induced turn-on during high-slew-rate node transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum blocking voltage compatible with 12 V input rails and transient margin in point-of-load converters
R_DS(on) @ V_GS = 10 V	4.5 mΩ typ - Enables ≤1.5 W conduction loss at 120 A RMS in high-current CPU VRMs
Q_g	18 nC typ - Supports efficient 500 kHz–1 MHz switching with moderate gate driver current (≥2 A peak)
I_D @ T_C = 25°C	120 A - Sustains full load current in compact D-Pak footprint without forced cooling
E_AS	600 mJ - Withstands single-pulse avalanche stress during startup/fault in synchronous buck stages
Q_rr	9.4–14 nC - Limits energy dissipation and cross-conduction risk during body diode commutation
R_θJC	1.9 °C/W - Enables direct heatsinking to PCB copper or external thermal pad for <10°C junction rise at 100 W

Pinout & Package

IRFR3711ZTRPBF is housed in a lead-free D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. The package features gull-wing leads, 1.6 mm standoff, and JEDEC-standard footprint.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground plane or output inlay; carries full load current
Pin 2 (Gate)	Control input (G)	High-impedance MOS control node; requires low-inductance gate loop to suppress ringing
Pin 3 (Drain)	Power output (D)	Exposed copper pad (Pin 3) - primary thermal path and high-current return to input capacitor

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V V_GS	5.7 mΩ max - enables direct drive from 5 V controllers without level-shifting in low-voltage synchronous FETs
Fully characterized avalanche rating	E_AS = 600 mJ, I_AR = 140 A - eliminates need for external snubbers in non-isolated DC-DC fault conditions
Optimized gate charge profile	Q_gd/Q_gs1 ratio minimized - reduces dv/dt-induced false turn-on in high-side synchronous rectifier configurations
Fast, soft-recovery body diode	t_rr = 19–28 ns, Q_rr = 9.4–14 nC - lowers switching losses and EMI in hard-switched synchronous buck stages

Applications

Server CPU Voltage Regulator

Telecom 48 V Input DC-DC Converter

Use Scenario: High-current, multi-phase buck converter delivering up to 200 A to modern x86 processors under dynamic load transients.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier FET operating at 500–1000 kHz with 4.5 V gate drive from integrated controller.

Use Value: 4.5 mΩ R_DS(on) minimizes conduction loss; 18 nC Q_g ensures clean switching edge without excessive gate drive power.

Use Scenario: Isolated forward or LLC converter with synchronous rectification on secondary side, fed from 48 V telecom bus.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier handling 30–60 A continuous current at 12–15 V output.

Use Value: 1.0 V V_SD and 28 ns t_rr reduce body diode conduction loss and improve light-load efficiency over Schottky alternatives.

Industrial PLC Power Module

Automotive ADAS Domain Controller Supply

Use Scenario: Compact 24 V input-to-5/3.3 V intermediate bus converter in space-constrained programmable logic controller chassis.

IC Role / Device Role / Timing Role: Primary-side high-frequency switch in non-isolated buck stage, rated for 105°C ambient operation.

Use Value: R_DS(on) tempco of +13 mV/°C ensures stable current sharing across parallel devices over full industrial temperature range.

Use Scenario: Safety-critical 12 V input buck converter powering radar and camera SoCs in automotive domain controllers.

IC Role / Device Role / Timing Role: Low-side FET in dual-phase buck regulator meeting AEC-Q101 stress requirements and ISO 26262 functional safety constraints.

Use Value: Fully characterized UIS rating (600 mJ) supports robustness against load dump and inductive kickback events per automotive test standards.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3711ZPBF	Same die, I-Pak (TO-251) package - higher R_θJA (110 °C/W vs. 50 °C/W), no exposed drain pad	Suitable for lower-power (<60 A), through-hole or mixed-technology boards where thermal relief is less critical	Select when board assembly uses wave soldering or requires mechanical anchoring via leadframe
STL220N5LF6AG	60 V rating, 2.2 mΩ R_DS(on), 40 nC Q_g, TSDFN8 package - higher voltage headroom but slower switching	Better for 24–48 V input industrial supplies; not drop-in for 12 V CPU VRMs due to gate drive and layout mismatch	Prefer when system requires >30 V blocking or tighter thermal resistance in ultra-thin form factor

Compared with IRLR3711ZPBF and STL220N5LF6AG, IRFR3711ZTRPBF delivers optimal balance of low R_DS(on), fast switching, and D-Pak thermal performance for high-current, high-frequency 12 V–20 V synchronous buck designs-making it the preferred choice for server VRMs and telecom DC-DC secondaries where layout density and thermal management are critical.

Availability

IRFR3711ZTRPBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom 48 V DC-DC converters, and industrial PLC power modules requiring stable component supply and long-term production continuity.

Supply support for IRFR3711ZTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to Infineon's HEXFET Power MOSFET product line, engineered for high-efficiency, high-frequency switching in server, telecom, and industrial power conversion systems where low conduction loss and robust avalanche capability are mandatory.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR3711ZTRPBF supports 30 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package and ensures safe operation under sustained high-power conditions without exceeding 175°C junction temperature.

Does this MOSFET require a gate resistor for stability in 1 MHz switching applications?

Yes-a 2.2 Ω to 4.7 Ω gate resistor is recommended to dampen ringing caused by parasitic inductance in the gate loop. The device's ultra-low gate impedance (18 nC Q_g, 360 pF Crss) makes it sensitive to layout-induced oscillation, especially above 500 kHz; proper gate resistor selection prevents overshoot and ensures reliable turn-on/turn-off timing.

Can IRFR3711ZTRPBF be used as a high-side switch in a floating-gate configuration?

No-it is not rated for high-side bootstrap operation without additional level-shifting circuitry. As an N-channel device with V_GS(th) up to 2.45 V, it requires gate drive referenced to source potential. For high-side use, a dedicated high-side driver or P-channel alternative is required; its optimized characteristics target low-side synchronous rectification.

Is the body diode suitable for continuous freewheeling in non-synchronous designs?

While the body diode is rated for 93 A continuous source current (I_S) and 370 A pulsed (I_SM), its 1.0 V forward drop and 19–28 ns reverse recovery time make it less efficient than Schottky diodes in non-synchronous operation above 100 kHz. It is intended for synchronous rectification-not standalone freewheeling-due to associated switching losses.

IRFR3711ZTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 93A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2160 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3711ZTRPBF FAQ

1.How can I place an order for IRFR3711ZTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3711ZTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3711ZTRPBF reliable?

The price and inventory of IRFR3711ZTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3711ZTRPBF is usually 5 days.

3.What payment methods are accepted for IRFR3711ZTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3711ZTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3711ZTRPBF?

IRFR3711ZTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3711ZTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3711ZTRPBF?

For technical support, including IRFR3711ZTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3711ZTRPBF requirements.

6.How does Aetrix verify that IRFR3711ZTRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3711ZTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3711ZTRPBF meets industry standards.

7.What is the process for return or replacement of IRFR3711ZTRPBF?

All IRFR3711ZTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3711ZTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3711ZTRPBF part is unused and in its original packaging.

Return procedure for IRFR3711ZTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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