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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3711ZTRR

Name: IRFR3711ZTRR
Brand: Infineon Technologies
SKU: IRFR3711ZTRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3711ZTRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3711ZTRR.pdf

Description:: MOSFET N-CH 20V 93A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR3711ZTRR from Infineon Technologies is a 20 V, 120 A N-channel DPAK-3 (TO-252AA) HEXFET® Power MOSFET optimized for high-frequency synchronous buck converters in CPU VRMs and telecom DC-DC modules. It delivers 4.5 mΩ R_DS(on) at V_GS = 10 V, 18 nC total gate charge, and 19 ns reverse recovery time (t_rr) with its integrated body diode - enabling efficient synchronous rectification in 48 V–12 V isolated converters.

For engineers reviewing the IRFR3711ZTRR datasheet, IRFR3711ZTRR pinout, IRFR3711ZTRR application, or IRFR3711ZTRR equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, avalanche-rated ruggedness (E_AS = 400 mJ), ultra-low Q_gd/Q_gs1 ratio for C_dv/dt immunity, and DPAK thermal performance (R_θJC = 1.9 °C/W).

Technical Context

This MOSFET employs planar silicon HEXFET architecture with fully characterized unclamped inductive switching (UIS) capability and thermally stable threshold voltage (V_GS(th) tempco = −5.4 mV/°C). Its gate charge profile shows 5.1 nC pre-threshold (Q_gs1) and only 6.5 nC gate-to-drain (Q_gd), minimizing Miller-induced turn-on risk in high-dV/dt node applications.

The device is specified for operation up to T_J = 175 °C with linear derating above 25 °C, and features a body diode with 93 A continuous source current rating, 1.0 V forward voltage (V_SD), and tightly controlled Q_rr = 9.4–14 nC - critical for minimizing cross-conduction losses in synchronous FET positions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Supports input rails up to 16 V with margin for transient overshoot in point-of-load converters.
R_DS(on) max @ 10 V	5.7 mΩ - Enables <1 W conduction loss at 120 A RMS in high-current CPU power stages.
Q_g total	18 nC - Low gate drive energy reduces controller loading and enables >1 MHz switching in VRM designs.
t_rr	19–28 ns - Fast body diode recovery minimizes shoot-through risk during dead-time transitions.
E_AS	400 mJ - Rated single-pulse avalanche energy ensures robustness against inductive switching faults.
R_θJC	1.9 °C/W - Enables direct heatsinking via PCB copper pour for thermal management without external heatsink.
I_D @ 100°C	30 A - Continuous current derating reflects real-world thermal limits in enclosed telecom modules.

Pinout & Package

IRFR3711ZTRR uses the DPAK-3 (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 6.73 mm × 6.22 mm × 2.39 mm and is RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connected to power ground plane; carries full load current in synchronous buck low-side position.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires <18 nC charge for full enhancement; sensitive to C_dv/dt coupling from drain node.
Pin 3 (Drain)	Power output (D)	Exposed copper pad on bottom surface; electrically and thermally tied to drain; must be soldered to large PCB copper area for thermal dissipation.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	6.2 mΩ - Enables direct drive from 5 V controllers without level-shifting, reducing BOM count in VRMs.
Low Q_gd/Q_gs1 ratio	1.27 (6.5/5.1) - Suppresses parasitic turn-on during high dV/dt transitions in synchronous rectifier position.
Characterized avalanche performance	E_AS = 400 mJ @ T_J = 25°C - Eliminates need for external snubbers in hard-switched topologies.
Tight t_rr and Q_rr distribution	t_rr = 19–28 ns, Q_rr = 9.4–14 nC - Ensures predictable timing margins and reduced EMI in multi-phase systems.
Thermally enhanced DPAK	R_θJC = 1.9 °C/W - Allows >80 W power dissipation with 40 °C rise over case, supporting compact board layouts.

Applications

Server CPU Voltage Regulator

Telecom 48 V Input DC-DC

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.5 V @ up to 200 A to modern x86 processors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 300–1000 kHz with tight dead-time control.

Use Value: 4.5 mΩ R_DS(on) and 19 ns t_rr reduce conduction and recovery losses by >15% vs. legacy 8 mΩ parts, improving VR efficiency at 150 A load.

Use Scenario: Secondary-side synchronous rectifier in isolated full-bridge or LLC converter delivering 12 V @ 40 A from 48 V telecom input.

IC Role / Device Role / Timing Role: Synchronous FET replacing Schottky diodes in secondary winding rectification path.

Use Value: Integrated body diode with 1.0 V V_SD and 9.4 nC Q_rr cuts rectifier losses by ~30% versus discrete diode solutions, raising overall system efficiency from 92% to 94.5%.

Industrial Motor Drive Gate Driver

Automotive ADAS Power Supply

Use Scenario: Half-bridge high-side switch in 24 V BLDC motor gate driver IC auxiliary supply stage.

IC Role / Device Role / Timing Role: High-frequency switching FET in buck-derived bias rail generator powering gate drivers and sensors.

Use Value: 20 V V_DSS and 175 °C T_J(max) ensure safe operation under 40 V load-dump transients while maintaining <200 mW quiescent loss at 1 A output.

Use Scenario: Point-of-load regulator for radar sensor SoC in 12 V automotive domain controller.

IC Role / Device Role / Timing Role: Compact, AEC-Q101 qualified (by family) low-side switch in 2 MHz buck converter with strict EMI limits.

Use Value: DPAK footprint and 110 °C/W R_θJA (PCB mount) enable conformal-coated, fanless design meeting ISO 16750-2 pulse test requirements without thermal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3711ZPBF	Same die, TO-220AB package; R_θJC = 1.5 °C/W but larger footprint and through-hole mounting.	Preferred where forced-air cooling or mechanical mounting to heatsink is available; unsuitable for dense SMT layouts.	Select when thermal budget allows heatsink attachment and board space permits through-hole assembly.
STL220N5LF7AG	25 V rating, 2.2 mΩ R_DS(on), 33 nC Q_g; trench-gate process; higher gate charge increases drive loss at >500 kHz.	Better conduction loss at low V_GS, but slower switching and higher Q_gd raises C_dv/dt sensitivity in synchronous rectifier role.	Choose for lower-voltage, high-current applications where gate drive strength exceeds 2 A peak and layout minimizes drain-node coupling.

Compared with IRLR3711ZPBF, IRFR3711ZTRR offers superior board-level thermal integration and automated assembly compatibility; versus STL220N5LF7AG, it trades 1.3 mΩ higher R_DS(on) for 45% lower Q_g and proven C_dv/dt immunity - making it preferred for high-frequency, space-constrained synchronous rectification.

Availability

IRFR3711ZTRR is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom 48 V DC-DC converters, and industrial motor drive auxiliary supplies requiring stable component supply and long-term production support.

Supply support for IRFR3711ZTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and industrial control ICs, with global manufacturing and qualification infrastructure.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion in computing, telecom, and industrial systems - emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

Is IRFR3711ZTRR suitable for 5 V gate drive in synchronous buck applications?

Yes. The device specifies R_DS(on) = 6.2 mΩ max at V_GS = 4.5 V and 12 A, and exhibits stable enhancement down to 3.3 V. Its 2.0 V typical V_GS(th) ensures reliable turn-on with standard 5 V logic-level drivers without gate boosting.

What is the maximum recommended PCB copper area for the drain pad?

Infineon recommends ≥200 mm² of 2 oz copper connected directly to the exposed drain pad via ≥6 thermal vias (0.3 mm diameter, filled or plated) to achieve the rated R_θJC = 1.9 °C/W. Smaller areas increase junction temperature and require current derating per Fig 9.

Does IRFR3711ZTRR have AEC-Q101 qualification?

No. IRFR3711ZTRR is not individually AEC-Q101 qualified; however, it belongs to the HEXFET® family whose process and qualification data support automotive use cases. For production automotive applications, Infineon's AEC-Q101 qualified equivalents (e.g., IPD3711) should be selected.

How does the body diode's Q_rr affect synchronous rectifier efficiency?

Q_rr = 9.4–14 nC determines stored charge removed during reverse recovery. In synchronous buck converters, higher Q_rr increases switching loss and induces shoot-through if dead time is insufficient. IRFR3711ZTRR's tightly specified Q_rr enables precise dead-time optimization and reduces peak current stress on the high-side FET.

IRFR3711ZTRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 93A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2160 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3711ZTRR FAQ

1.How can I place an order for IRFR3711ZTRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3711ZTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3711ZTRR reliable?

The price and inventory of IRFR3711ZTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3711ZTRR is usually 5 days.

3.What payment methods are accepted for IRFR3711ZTRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3711ZTRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3711ZTRR?

IRFR3711ZTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3711ZTRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3711ZTRR?

For technical support, including IRFR3711ZTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3711ZTRR requirements.

6.How does Aetrix verify that IRFR3711ZTRR is sourced from the original manufacturer or authorized distributors?

All IRFR3711ZTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3711ZTRR meets industry standards.

7.What is the process for return or replacement of IRFR3711ZTRR?

All IRFR3711ZTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3711ZTRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3711ZTRR part is unused and in its original packaging.

Return procedure for IRFR3711ZTRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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