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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3711ZTRRPBF

Name: IRFR3711ZTRRPBF
Brand: Infineon Technologies
SKU: IRFR3711ZTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3711ZTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3711ZTRRPBF.pdf

Description:: MOSFET N-CH 20V 93A DPAK

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Product details

Overview

IRFR3711ZTRRPBF from Infineon Technologies is a 20 V, 120 A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, featuring 4.5 mΩ typical R_DS(on) at V_GS = 4.5 V, 18 nC total gate charge, and fully characterized unclamped inductive avalanche capability. It serves as a high-efficiency synchronous rectifier or control FET in high-frequency DC-DC converters for server CPU power delivery.

For engineers reviewing the IRFR3711ZTRRPBF datasheet, IRFR3711ZTRRPBF pinout, IRFR3711ZTRRPBF application, or IRFR3711ZTRRPBF equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, ultra-low gate impedance, avalanche-rated ruggedness, and thermal performance in PCB-mounted D-Pak layout for high-current buck stages.

Technical Context

This MOSFET employs planar silicon HEXFET architecture optimized for fast switching and low conduction loss in synchronous rectification. Its gate threshold voltage (V_GS(th)) is tightly specified at 1.55–2.45 V with negative temperature coefficient (−5.4 mV/°C), enabling stable turn-on across junction temperatures up to 175 °C.

The device integrates an intrinsic body diode with 19–28 ns reverse recovery time (t_rr) and 9.4–14 nC Q_rr, supporting high-frequency operation in hard-switched topologies. Its C_iss/C_oss/C_rss values (2160 pF / 700 pF / 360 pF at V_DS = 10 V) are characterized to enable accurate gate drive loss modeling and dv/dt-induced turn-on mitigation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage for 12 V input rail applications
R_DS(on) @ 4.5 V	4.5 mΩ typ - Enables <1 W conduction loss at 120 A RMS in high-current CPU VRMs
Q_g	18 nC - Determines gate driver current requirement and switching transition time
t_r/t_f	13 ns / 5.2 ns - Supports >1 MHz switching in synchronous buck converters
E_AS	370 mJ - Rated single-pulse avalanche energy ensures robustness under inductive fault conditions
R_θJC	1.9 °C/W - Enables direct heatsinking via PCB copper pour for thermal management
I_D @ T_C = 25°C	120 A - Continuous drain current rating at case temperature, validated for D-Pak mounting

Pinout & Package

IRFR3711ZTRRPBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical connection. The three-terminal configuration supports high-current PCB routing with minimal parasitic inductance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Exposed metal tab electrically connected to drain; must be soldered to large copper area for thermal dissipation and low-inductance return path
Source	Reference node for gate drive and current sensing	Low-impedance source connection enables accurate current monitoring and stable gate control reference
Gate	Control electrode for channel modulation	High-impedance input requiring <20 nC charge for full enhancement; sensitive to ESD and dv/dt coupling

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	4.5 mΩ typical - Reduces conduction loss by >30% vs. standard 20 V MOSFETs in 5–12 V input synchronous rectifiers
Fully characterized avalanche	370 mJ E_AS - Eliminates need for external snubbers in high-di/dt synchronous buck phases
Low gate charge ratio Q_gd/Q_gs1	6.5 nC / 5.1 nC ≈ 1.27 - Minimizes risk of dv/dt-induced false turn-on in high-side synchronous FET configurations
Optimized body diode	Q_rr = 9.4–14 nC, t_rr = 19–28 ns - Enables efficient zero-voltage switching transitions without excessive shoot-through penalty

Applications

Server CPU Voltage Regulator

Telecom DC-DC Isolated Converter

Use Scenario: High-current, multi-phase buck converter delivering 1–2 V @ >100 A to modern x86 processors.

IC Role / Device Role / Timing Role: Synchronous rectifier FET operating at 500 kHz–1 MHz with gate driven by dedicated controller IC.

Use Value: 4.5 mΩ R_DS(on) at 4.5 V reduces conduction loss by 0.6 W per phase vs. competitive 20 V MOSFETs, improving VR efficiency by 0.8% at full load.

Use Scenario: Secondary-side synchronous rectification in 48 V input isolated forward or LLC converters for telecom base stations.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier with body diode conducting during dead-time and MOSFET conducting during active period.

Use Value: 19–28 ns t_rr and low Q_rr minimize reverse recovery losses and reduce stress on primary-side switch during commutation.

Industrial Motor Drive Half-Bridge

Automotive ADAS Power Supply

Use Scenario: 12–24 V half-bridge driver stage powering BLDC motor gate drivers or auxiliary loads in factory automation systems.

IC Role / Device Role / Timing Role: Low-side switch in PWM-driven half-bridge with 100 kHz–500 kHz switching frequency.

Use Value: 120 A continuous rating and 1.9 °C/W R_θJC allow sustained operation at 85 °C ambient without forced air cooling.

Use Scenario: Point-of-load regulator supplying 1.8 V/3.3 V to radar processor and camera SoCs in automotive ADAS ECUs.

IC Role / Device Role / Timing Role: Control FET in compact 2-layer PCB-mounted buck converter with tight thermal constraints.

Use Value: Lead-free D-Pak package and −55 to +175 °C T_J rating meet AEC-Q101 requirements for under-hood deployment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3711ZPBF	Same die, I-Pak (TO-251) package; R_θJA = 79 °C/W vs. 50 °C/W for D-Pak	Limited to lower-power applications due to higher thermal resistance; unsuitable for >60 A continuous designs	Select when footprint compatibility with through-hole I-Pak is required and thermal budget allows 30% higher junction rise
SI7850DP-T1-GE3	20 V, 110 A, 4.0 mΩ @ 4.5 V, but Q_g = 22 nC and no published E_AS rating	Better R_DS(on) but higher gate drive loss and unverified avalanche ruggedness	Prefer for efficiency-critical light-load operation; avoid where inductive fault immunity is mandatory

Compared with IRFR3711ZTRRPBF, IRFR3711ZPBF trades thermal performance for package compatibility, while SI7850DP-T1-GE3 improves conduction loss at the cost of gate drive overhead and missing avalanche validation-making IRFR3711ZTRRPBF optimal for rugged, high-current synchronous rectification.

Availability

IRFR3711ZTRRPBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom DC-DC converters, and industrial motor drive half-bridges requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFR3711ZTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the HEXFET Power MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion in computing, telecom, and industrial infrastructure applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR3711ZTRRPBF supports 30 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package and must be verified against actual PCB copper area and airflow in the target application.

Does this MOSFET require a gate resistor for reliable operation?

Yes-a gate resistor (typically 2–10 Ω) is required to dampen ringing, control dV/dt, and prevent oscillation during switching. The 18 nC gate charge and low gate impedance make it especially sensitive to PCB layout parasitics; improper gate drive can cause shoot-through or premature failure.

Is the body diode suitable for reverse recovery in hard-switched topologies?

Yes-the body diode is fully characterized with t_rr = 19–28 ns and Q_rr = 9.4–14 nC at I_F = 12 A, making it suitable for hard-switched synchronous rectification. However, its softness factor is not specified, so snubber design should account for peak reverse recovery current.

Can IRFR3711ZTRRPBF replace IRFR3707ZTRPBF in existing designs?

No-IRFR3707ZTRPBF is a 30 V device with 6.7 mΩ R_DS(on) at 4.5 V and different gate charge profile. While both are D-Pak, the 20 V rating and lower R_DS(on) of IRFR3711ZTRRPBF require verification of voltage margin in 12 V systems and may alter gate drive timing and loop stability.

IRFR3711ZTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 93A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2160 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3711ZTRRPBF FAQ

1.How can I place an order for IRFR3711ZTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3711ZTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3711ZTRRPBF reliable?

The price and inventory of IRFR3711ZTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3711ZTRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR3711ZTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3711ZTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3711ZTRRPBF?

IRFR3711ZTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3711ZTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3711ZTRRPBF?

For technical support, including IRFR3711ZTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3711ZTRRPBF requirements.

6.How does Aetrix verify that IRFR3711ZTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3711ZTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3711ZTRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR3711ZTRRPBF?

All IRFR3711ZTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3711ZTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3711ZTRRPBF part is unused and in its original packaging.

Return procedure for IRFR3711ZTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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